Transient Voltage Suppressors Array for ESD Protection Low Capacitance ESD05V23T-2L Description SOT-23 The ESD05V23T-2L is designed to protect voltage sensitive components from ESD and transient voltage events. Excellent clamping capability, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. Feature Functional Diagram u 350 Watts Peak Pulse Power per Line (tp=8/20μs) u Protects two I/O lines u Low clamping voltage u Working voltages : 5V u Low leakage current u IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact) u IEC61000-4-4 (EFT) 40A (5/50ηs) u IEC61000-4-5 (Lightning) 12A (8/20μs) Applications u USB Power & Data Line Protection u Ethernet 10BaseT u I C Bus Protection u Video Line Protection Mechanical Characteristics 2 u T1/E1 secondary IC Side Protection u Microcontroller Input Protection u ISDN S/T Interface u WAN/LAN Equipment u JEDEC SOT-23 Package u Molding Compound Flammability Rating : UL 94V-0 u Weight 8.0 Milligrams (Approximate) u Quantity Per Reel : 3,000pcs u Reel Size : 7 inch u Lead Finish : Lead Free Mechanical Characteristics Symbol Parameter Value Units 350 W PPP Peak Pulse Power (tp=8/20μs waveform) TL Lead Soldering Temperature 260 (10sec) ºC TSTG Storage Temperature Range -55 to +150 ºC Operating Temperature Range -55 to +150 ºC TJ Air Discharge ±15 Contact Discharge ±8 IEC61000-4-2 (ESD) IEC61000-4-4 (EFT) 40 A IEC61000-4-5 ( Lightning ) 12 A UN Semiconductor Co., Ltd. Revision January 06, 2014 KV www.unsemi.com.tw 1/3 @ UN Semiconductor Co., Ltd. 2014 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. Transient Voltage Suppressors Array for ESD Protection Low Capacitance ESD05V23T-2L Electrical Characteristics (@ 25℃ Unless Otherwise Specified ) Part Number Device Marking VRWM (V) (Max.) VB (V) (Min.) IT (mA) VC @1A (Max.) (Max.) Y D05 5 6 1 9.8 12 ESD05V23T-2L (@A) IR (μA) (Max.) C (pF) (Typ.) 5 1 1 VC Characteristic Curves Fig1. 8/20μs Pulse Waveform Fig2. ESD Pulse Waveform (according to IEC 61000-4-2) tr 100 Peak Value IPP 80 100% TEST WAVEFORM PARAMETERS tr=8μs td=20μs Percent of Peak Pulse Current % IPP - Peak Pulse Current - % of IPP 120 60 40 td=t IPP/2 20 90% 10% 0 5 10 15 20 25 30ns 30 60ns t - Time (μs) Fig3. Fig4. 8 Power Derating Curve 110 100 7 6 % of Rated Power Forward Voltage - Vr (V) Time (ns) tr = 0.7~1ns 0 5 4 3 Waveform Parameters tr = 8μs td = 20μs 2 1 0 0 1 2 3 4 Peak Pulse Current - IPP (A) 5 0 6 25 50 75 100 125 150 Ambient Temperature – TA (ºC) UN Semiconductor Co., Ltd. Revision January 06, 2014 90 80 70 60 50 40 30 20 10 0 www.unsemi.com.tw 2/3 @ UN Semiconductor Co., Ltd. 2014 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. Transient Voltage Suppressors Array for ESD Protection Low Capacitance ESD05V23T-2L Characteristic Curves Fig5. ESD Clamping (8KV Contac per IEC61000-4-2) SOT-23 Package Outline & Dimensions Millimeters Inches Symbol Soldering Footprint UN Semiconductor Co., Ltd. Revision January 06, 2014 Min. Nom. Max. Min. Nom. Max. A 0.89 1.00 1.11 0.035 0.040 0.044 A1 0.01 0.06 0.10 0.001 0.002 0.004 b 0.37 0.44 0.50 0.15 0.18 0.020 c 0.09 0.13 0.18 0.003 0.005 0.007 D 2.80 2.90 3.04 0.110 0.114 0.120 E 1.20 1.30 1.40 0.047 0.051 0.055 e 1.78 1.90 2.04 0.070 0.075 0.081 L 0.35 0.54 0.69 0.014 0.021 0.029 HE 2.10 2.40 2.64 0.083 0.094 0.104 Symbol Millimeters Inches X 0.80 0.031 X1 0.95 0.037 Y 0.90 0.035 Z 2.00 0.079 www.unsemi.com.tw 3/3 @ UN Semiconductor Co., Ltd. 2014 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.