BTA20 BW/CW BTB20 BW/CW SNUBBERLESS TRIACS TO-220AB FEATURES High commutation: (dI/dt)c > 18A/ms without snubber High surge current: ITSM = 200A VDRM up to 800V BTA Family: Insulating voltage = 2500V(RMS) (UL recognized: E81734) ■ ■ ■ ■ DESCRIPTION The BTA/BTB20 BW/CW triac family are high performance glass passivated chips technology. The SNUBBERLESS concept offer suppression of RC network and it is suitable for application such as phase control and static switching on inductive or resistive load. A2 G A1 ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM I2t dI/dt Tstg Tj Tl Parameter RMS on-state current (360° conduction angle) BTA Tc = 70°C BTB Tc = 90°C Value Unit 20 A A Non repetitive surge peak on-state current (Tj initial = 25°C) tp = 8.3ms 210 tp = 10ms 200 I2t value tp = 10ms 200 A2s Critical rate of rise of on-state current Gate supply: IG = 500mA dIG/dt = 1A/µs Repetitive F = 50Hz 20 A/µs Non repetitive 100 Storage and operating junction temperature range Maximum lead soldering temperature during 10s at 4.5mm from case -40 to +150 -40 to +125 °C 260 °C BTA/BTB20-...BW/CW Symbol VDRM VRRM 2014-6-10 Parameter Unit Repetitive peak off-state voltage Tj = 125°C 1 600 700 600 700 V www.kersemi.com BTA(B)20 BW/CW THERMAL RESISTANCE Symbol Parameter Rth (j-a) Value Unit 60 °C/W BTA 2.8 °C/W BTB 1.7 BTA 2.1 BTB 1.3 Junction to ambient Rth (j-c) DC Rth (j-c) AC Junction to case for DC Junction to case for 360° conduction angle (F = 50Hz) GATE CHARACTERISTICS (maximum values) PG(AV) = 1W PGM = 10W (tp = 20µs) IGM = 4A (tp = 20µs) °C/W VGM = 16V (tp = 20µs) ELECTRICAL CHARACTERISTICS BTA / BTB20 Symbol IGT Test conditions VD = 12V (DC) RL = 33Ω Quadrant Tj = 25°C I - II - III Unit BW CW MIN. 2 1 MAX. 50 35 mA VGT VD = 12V (DC) RL = 33Ω Tj = 25°C I - II - III MAX. 1.5 V VGD VD = VDRM RL = 3.3kΩ Tj =125°C I - II - III MIN. 0.2 V 2 µs tgt VD = VDRM IG = 500mA dIG/dt = 3A/µs Tj = 25°C I - II - III TYP. IL IG = 1.2IGT Tj = 25°C I - III TYP. 50 - 90 - MAX. - 80 75 50 II I - II - III IH* mA IT = 500mA Gate open Tj = 25°C MAX. VTM * ITM = 28A Tj = 25°C MAX. 1.70 V IDRM IRRM VDRM rated VRRM rated Tj = 25°C MAX. 0.01 mA Tj = 125°C MAX. 3 Tj = 125°C TYP. 750 500 MIN. 500 250 TYP. 36 22 MIN. 18 11 dV/dt * (dI/dt)c* tp = 380µs Linear slope up to VD = 67% VDRM gate open Without snubber Tj = 125°C mA V/µs A/ms * For either polarity of electrode A2 voltage with reference to electrode A1 2014-6-10 2 www.kersemi.com BTA(B)20 BW/CW PRODUCT INFORMATION IT(RMS) VDRM / VRRM A V BW CW 20 600 X X 700 X X Sensitivity Specification Package BTA (Insulated) BTB (Uninsulated) 600 X ORDERING INFORMATION BT A 20 - Triac Series 600 BW Sensitivity Insulation: A: insulated B: non insulated Voltage: 600: 600V 700: 700V Current: 20A 2014-6-10 3 www.kersemi.com BTA(B)20 BW/CW Fig. 1: Maximum RMS power dissipation versus RMS on-state current (F = 50Hz).(Curves are cut off by (dI/dt)c limitation) Fig. 2: Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (BTA). Fig. 3: Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (BTB). Fig. 4: RMS on-state current versus case temperature. Fig. 5: Relative variation of thermal impedance versus pulse duration. Fig. 6: Relative variation of gate trigger current and holding current versus junction temperature. Zth/Rth 1 Zth(j-c) 0.1 Zth(j-a) tp(s) 0.01 1E-3 2014-6-10 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 4 www.kersemi.com BTA(B)20 BW/CW Fig. 7: Non repetitive surge peak on-state current versus number of cycles. Fig. 8: Non repetitive surge peak on-state current for a sinusoidal pulse with width: t ≤ 10ms, and corresponding value of I2t. Fig. 9: On-state characteristics (maximum values). 2014-6-10 5 www.kersemi.com