CM75DU-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD™ U-Series Module 75 Amperes/600 Volts TC Measured Point A B E F U H G J C2E1 E2 C1 G2 G2 CM D C 2 - Mounting Holes (6.5 Dia.) V G1 E1 K L M 3-M5 Nuts O P Q Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. N O 0.110 - 0.5 Tab P S R T E2 G2 C2E1 E2 Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions A Inches 3.7 Millimeters 94.0 B 3.15±0.01 C 1.89 80.0±0.25 48.0 D 0.94 E 0.28 Dimensions Inches M 0.47 Millimeters 12.0 N 0.53 13.5 O 0.1 2.5 24.0 P 0.63 16.0 7.0 Q 0.98 25.0 1.18 +0.04/-0.02 30.0 +1.0/-0.5 Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM75DU-12H is a 600V (VCES), 75 Ampere Dual IGBTMOD™ Power Module. F 0.67 17.0 R G 0.91 23.0 S 0.3 7.5 H 0.91 23.0 T 0.83 21.2 J 0.43 11.0 U 0.16 4.0 Type Current Rating Amperes VCES Volts (x 50) K 0.71 18.0 V 0.51 13.0 CM 75 12 L 0.16 4.0 17 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM75DU-12H Dual IGBTMOD™ U-Series Module 75 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Symbol CM75DU-12H Units Tj -40 to 150 °C Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 75 Amperes ICM 150* Amperes IE 75 Amperes Peak Emitter Current** IEM 150* Amperes Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) Pc 310 Watts Mounting Torque, M5 Main Terminal – 31 in-lb Mounting Torque, M6 Mounting – 40 in-lb – 310 Grams Viso 2500 Volts Storage Temperature Collector Current (Tc = 25°C) Peak Collector Current Emitter Current** (Tc = 25°C) Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics,Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Symbol Test Conditions Min. Typ. Max. ICES VCE = VCES, VGE = 0V – – 1 Units mA IGES VGE = VGES, VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 7.5mA, VCE = 10V 4.5 6 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 75A, VGE = 15V, Tj = 25°C – 2.4 3.0 Volts IC = 75A, VGE = 15V, Tj = 125°C – – Volts Total Gate Charge QG VCC = 300V, IC = 75A, VGE = 15V – 150 – nC Emitter-Collector Voltage** VEC IE = 75A, VGE = 0V – – 2.6 Min. Typ. Max. Units – – 6.6 nf – – 3.6 nf – – 1 nf Gate Leakage Voltage 2.6 Volts **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) VCC = 300V, IC = 75A, – – 100 ns Load Rise Time tr VGE1 = VGE2 = 15V, – – 250 ns Switch Turn-off Delay Time Times Fall Time VCE = 10V, VGE = 0V td(off) RG = 8.3V, Resistive – – 200 ns tf Load Switching Operation – – 300 ns Diode Reverse Recovery Time** trr IE = 75A, diE/dt = -150A/µs – – 160 ns Diode Reverse Recovery Charge** Qrr IE = 75A, diE/dt = -150A/µs – 0.18 – µC **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/2 Module – – 0.4 °C/W Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module – – 0.9 °C/W Rth(c-f) Per Module, Thermal Grease Applied – 0.035 – °C/W Contact Thermal Resistance 18 Symbol Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM75DU-12H Dual IGBTMOD™ U-Series Module 75 Amperes/600 Volts 13 VGE = 20V 12 100 75 11 50 10 25 9 5 VCE = 10V Tj = 25°C Tj = 125°C 125 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 125 150 14 15 Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) 100 75 50 25 8 0 0 0 2 4 6 8 3 2 1 4 8 12 16 0 20 40 80 120 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 103 102 6 IC = 150A 4 2 IC = 30A 4 8 12 16 20 101 1.0 1.4 1.8 2.2 2.6 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 td(off) REVERSE RECOVERY TIME, trr, (ns) VCC = 300V VGE = ±15V RG = 8.3 Ω Tj = 125°C tf 102 td(on) tr 101 COLLECTOR CURRENT, IC, (AMPERES) 102 101 Irr 101 100 101 102 EMITTER CURRENT, IE, (AMPERES) 100 Coes Cres 10-1 100 101 102 GATE CHARGE, VGE di/dt = -150A/µsec Tj = 25°C trr Cies COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 102 102 101 10-2 10-1 3.0 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 103 101 100 102 100 0.6 0 0 CAPACITANCE, Cies, Coes, Cres, (nF) IC = 75A 100 103 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 8 160 VGE = 0V f = 1MHz Tj = 25°C Tj = 25°C EMITTER CURRENT, IE, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 4 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 10 SWITCHING TIME, (ns) VGE = 15V Tj = 25°C Tj = 125°C 0 0 10 REVERSE RECOVERY CURRENT, Irr, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 150 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) IC = 75A VCC = 200V 15 VCC = 300V 10 5 0 0 50 100 150 200 GATE CHARGE, QG, (nC) 19 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-3 101 100 10-2 10-1 100 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 20 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.4°C/W 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) CM75DU-12H Dual IGBTMOD™ U-Series Module 75 Amperes/600 Volts TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 100 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.9°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3