isc Product Specification isc Silicon NPN Power Transistors BUS22 DESCRIPTION High Switching Speed ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 300V (Min) · APPLICATIONS ·Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCES Collector- EmitterVoltage(VBE= 0) 550 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 20 A IB Base Current-Continuous 4 A IBM Base Current-Peak 6 A PC Collector Power Dissipation @TC=25℃ 125 W Tj Junction Temperature 200 ℃ -65~200 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.4 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Product Specification isc Silicon NPN Power Transistors BUS22 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.2A 1.5 V ICES Collector Cutoff Current VCE=VCESMmax; VBE= 0 1 mA IEBO Emitter Cutoff Current VEB= 9V; IC= 0 1 mA hFE DC Current Gain IC= 1A ; VCE= 5V 300 UNIT V 18 Switching Times , Resistive Load ton Turn-On Time tstg Storage Time tf IC= 6A ;IB1= -IB2= 1.2A Fall Time isc website：www.iscsemi.com 2 0.5 μs 3.0 μs 0.3 μs isc & iscsemi is registered trademark