AP9971GM-HF Halogen-Free Product Advanced Power Electronics Corp. DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance D2 D2 ▼ Single Drive Requirement D1 D1 ▼ Surface Mount Package BVDSS 60V RDS(ON) 50mΩ ID G2 5A S2 G1 ▼ RoHS Compliant & Halogen-Free SO-8 S1 D2 D1 Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G2 G1 S1 S2 Absolute Maximum Ratings Parameter Symbol Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage +25 V ID@TA=25℃ Continuous Drain Current3, VGS @ 10V 5 A 3.2 A ID@TA=100℃ 3 Continuous Drain Current , VGS @ 10V 1 IDM Pulsed Drain Current 30 A PD@TA=25℃ Total Power Dissipation 2 W Linear Derating Factor 0.016 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 62.5 ℃/W 1 201007193 AP9971GM-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units 60 - - V BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.06 - V/℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=5A - - 50 mΩ VGS=4.5V, ID=2.5A - - 60 mΩ VGS=0V, ID=250uA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=5A - 16 - S IDSS Drain-Source Leakage Current VDS=60V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70 C) VDS=48V ,VGS=0V - - 25 uA Gate-Source Leakage VGS= +25V, VDS=0V - - +100 nA ID=5A - 32.5 - nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=48V - 4.9 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 8.8 - nC VDS=30V - 9.6 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=5A - 10 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 30 - ns tf Fall Time RD=6Ω - 5.5 - ns Ciss Input Capacitance VGS=0V - 1658 - pF Coss Output Capacitance VDS=25V - 156 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 109 - pF Min. Typ. IS=1.6A, VGS=0V - - 1.2 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Max. Units trr Reverse Recovery Time IS=5A, VGS=0V, - 29.2 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 48 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 135℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9971GM-HF 35 35 10V 6.0V 4.5V o T A =25 C 10V 6.0V 4.5V 25 T A =150 o C 30 ID , Drain Current (A) ID , Drain Current (A) 30 20 15 10 25 20 15 V G =3.0V 10 V G =3.0V 5 5 0 0 0 1 2 3 4 5 0 1 2 3 4 5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 55 2.4 I D =5A V G =10V I D =5A T A =25 o C 2.0 Normalized RDS(ON) RDSON (mΩ) 50 45 40 1.6 1.2 0.8 35 0.4 30 0.0 2 4 6 8 -50 10 0 50 100 150 o V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 100 2.8 2.4 10 VGS(th) (V) IS (A) 2 o o T j =150 C T j =25 C 1 1.6 1.2 0.1 0.8 0.01 0.4 0.1 0.3 0.5 0.7 0.9 1.1 1.3 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.5 -50 0 50 100 150 T j ,Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9971GM-HF f=1.0MHz 10000 12 V DS =30V V DS =38V V DS =48V 8 Ciss 1000 C (pF) VGS , Gate to Source Voltage (V) I D =5A 10 6 Coss Crss 100 4 2 10 0 0 5 10 15 20 25 30 35 1 40 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100 ID (A) 10 Normalized Thermal Response (Rthja) DUTY=0.5 100us 1ms 1 10ms 100ms 0.1 1s T A =25 o C Single Pulse 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = P DM x Rthja + Ta 0.01 Rthja = 135℃/W Single Pulse DC 0.001 0.01 0.1 1 10 100 1000 0.0001 0.001 0.01 Fig 9. Maximum Safe Operating Area 0.1 1 10 100 1000 t , Pulse Width (s) V DS , Drain-to-Source Voltage (V) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4