Vishay BYW34 Fast avalanche sinterglass diode Datasheet

BYW32, BYW33, BYW34, BYW35, BYW36
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Vishay Semiconductors
Fast Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• Soft recovery characteristics
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
949539
• Fast rectification an switching diode for example for
TV-line output circuits and switch mode power supply




MECHANICAL DATA
Case: SOD-57
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end

Mounting position: any
Weight: approx. 369 mg
ORDERING INFORMATION (Example)
DEVICE NAME
ORDERING CODE
TAPED UNITS
BYW36
BYW36-TR
5000 per 10" tape and reel
MINIMUM ORDER QUANTITY
25 000
BYW36
BYW36-TAP
5000 per ammopack
25 000
PARTS TABLE
PART
TYPE DIFFERENTIATION
PACKAGE
BYW32
VR = 200 V; IF(AV) = 2 A
SOD-57
BYW33
VR = 300 V; IF(AV) = 2 A
SOD-57
BYW34
VR = 400 V; IF(AV) = 2 A
SOD-57
BYW35
VR = 500 V; IF(AV) = 2 A
SOD-57
BYW36
VR = 600 V; IF(AV) = 2 A
SOD-57
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage = repetitive peak
reverse voltage
Peak forward surge current
TEST CONDITION
PART
SYMBOL
VALUE
UNIT
BYW32
VR = VRRM
200
V
BYW33
VR = VRRM
300
V
BYW34
VR = VRRM
400
V
BYW35
VR = VRRM
500
V
BYW36
VR = VRRM
600
V
tp = 10 ms, half sine wave
IFSM
50
A
IFRM
12
A
 = 180°
IF(AV)
2
A
I(BR)R = 0.4 A
ER
10
mJ
Tj = Tstg
- 55 to + 175
°C
See electrical characteristics
Repetitive peak forward current
Average forward current
Non repetitive reverse avalanche
energy
Junction and storage temperature
range
Rev. 1.8, 11-Sep-12
Document Number: 86048
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYW32, BYW33, BYW34, BYW35, BYW36
www.vishay.com
Vishay Semiconductors
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
TEST CONDITION
SYMBOL
VALUE
UNIT
Lead length l = 10 mm, TL = constant
RthJA
45
K/W
On PC board with spacing 25 mm
RthJA
100
K/W
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
IF = 1 A
VF
-
0.95
1.1
V
VR = VRRM
IR
-
1
5
μA
VR = VRRM, Tj = 150 °C
IR
-
60
150
μA
IF = 0.5 A, IR = 1 A, iR = 0.25 A
trr
-
-
200
ns
Forward voltage
Reverse current
Reverse recovery time
PART
UNIT
TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)
2.5
IFAV - Average Forward Current (A)
RthJA - Ther. Resist. Junction/Ambient (K/W)
120
100
80
60
l
l
40
20
TL = constant
VR = VRRM
half sinewave
2.0
1.5
1.0
5
10
15
20
25
0
0
30
l - Lead Length (mm)
949552
RthJA = 100 K/W
PCB: d = 25 mm
0.5
0
0
RthJA = 45 K/W
I = 10 mm
Fig. 1 - Max. Thermal Resistance vs. Lead Length
20
40
60
80 100 120 140 160 180
Tamb - Ambient Temperature (°C)
16346
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
1000
100
10
IR - Reverse Current (A)
IF - Forward Current (A)
VR = VRRM
Tj = 175 °C
1
Tj = 25 °C
0.1
0.01
100
10
1
25
0.001
0
16345
0.5
1.0
1.5
2.0
2.5
3.0
VF - Forward Voltage (V)
Fig. 2 - Forward Current vs. Forward Voltage
Rev. 1.8, 11-Sep-12
16347
50
75
100
125
150
175
Tj - Junction Temperature (°C)
Fig. 4 - Reverse Current vs. Junction Temperature (°C)
Document Number: 86048
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYW32, BYW33, BYW34, BYW35, BYW36
Vishay Semiconductors
300
40
f = 1 MHz
VR = VRRM
CD - Diode Capacitance (pF)
PR - Reverse Power Dissipation (mW)
www.vishay.com
250
200
PR-Limit
at 100 % VR
150
100
PR-Limit
at 80 % VR
50
35
30
25
20
15
10
5
0
25
50
75
100
125
150
0
0.1
175
Tj - Junction Temperature (°C)
16348
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature
Zthp - Thermal Resist. for Pulse Cond. (K/W)
1
10
100
VR - Reverse Voltage (V)
16349
Fig. 6 - Diode Capacitance vs. Reverse Voltage
1000
VRRM = 600 V
RthJA = 100 K/W
100
Tamb = 25 °C
tp/T = 0.5
45 °C
0.2
0.1
50 °C
100 °C
10
0.02
70 °C
0.01
1
10-5
10-4
949561
Single pulse
10-3
10-2
10-1
100
101
tp - Pulse Length (s)
100
101
IFRM - Repetitive Peak
Forward Current (A)
Fig. 7 - Thermal Response
3.6 (0.142) max.
0.82 (0.032) max.
PACKAGE DIMENSIONS in millimeters (inches): SOD-57
26 (1.024) min.
4 (0.157) max.
26 (1.024) min.
20543
Rev. 1.8, 11-Sep-12
Document Number: 86048
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000
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