Advance Datasheet Single Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifier General Description Features The AZV831 is low bias current, low voltage operational amplifiers which can be designed into a wide range of applications. The AZV831 has a quiescent current of 70μA per amplifier at 1.6V. • • • • The AZV831 features optimal performance in low voltage, low bias current systems. The IC can provide rail-to-rail output swing under heavy loads. The common-mode input voltage range could be designed 200mV exceeding the supply voltage range, thus enables the customer to expand its application scope. The AZV831 has a maximum input offset voltage of 2.5mV and its operating range is from 1.6V to 5.5V. • • • • AZV831 Single Supply Voltage Range: 1.6V to 5.5V Ultra-low Input Bias Current: 1pA (Typ.) Offset Voltage: 0.5mV (Typ.), 2.5mV (Max.) Rail-to-Rail Input VCM: 200mV beyond Rails Rail-to-Rail Output Swing 20kΩ Load Supply Current: 70μA Unity Gain Stable Gain Bandwidth Product: 1.0MHz Slew Rate: 0.45V/μs @ VCC=5.0V Operation Ambient Temperature Range: -40ºC to 85ºC AZV831 is available in SC-70-5 and SOT-23-5 packages. Applications • • • • Sensors Photodiode Amplification Battery-Powered Instrumentation Pulse Blood Oximeter, Glucose Meter SC-70-5 SOT-23-5 Figure 1. Package Types of AZV831 Nov. 2011 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 1 Advance Datasheet Single Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifier AZV831 Pin Configuration KS/K Package （SC-70-5/SOT-23-5） OUTPUT 1 VEE 2 IN+ 3 5 VCC 4 IN- Figure 2. Pin Configuration of AZV831 (Top View) Function Block Diagram 5 VCC + - IN- IN+ Class AB Control 4 1 OUTPUT 3 + - 2 VEE Figure 3. Functional Block Diagram of AZV831 Nov. 2011 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 2 Advance Datasheet Single Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifier AZV831 Ordering Information AZV831 - Circuit Type G1: Green Package KS: SC-70-5 K: SOT-23-5 Blank: Tube TR: Tape & Reel Package Temperature Range SC-70-5 -40 to 85°C AZV831KSTR-G1 L3 Tape & Reel SOT-23-5 -40 to 85°C AZV831KTR-G1 G4D Tape & Reel Part Number Marking ID Packing Type BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant and green. Nov. 2011 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 3 Advance Datasheet Single Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifier AZV831 Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Power Supply Voltage VCC 6.0 V Differential Input Voltage VID 6.0 V Input Voltage VIN -0.3 to VCC+0.5 V Operating Junction Temperature TJ 150 ºC Thermal Resistance (Junction to Ambient) θJA SC-70-5 SOT-23-5 270 220 ºC /W Storage Temperature Range TSTG -65 to 150 ºC Lead Temperature (Soldering,10 Seconds) TLEAD 260 ºC ESD (Human Body Model) 6000 V ESD (Machine Model) 400 V Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute Maximum Ratings” for extended periods may affect device reliability. Recommended Operating Conditions Parameter Supply Voltage Operation Ambient Temperature Range Nov. 2011 Symbol Min Max Unit VCC 1.6 5.5 V TA -40 85 ºC Rev. 1. 1 BCD Semiconductor Manufacturing Limited 4 Advance Datasheet Single Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifier AZV831 1.6V DC Electrical Characteristics VCC=1.6V, VEE=0, VCM=VCC/2, TA=25°C, unless otherwise noted. Parameter Symbol Input Offset Voltage Conditions Min Typ Max Unit VOS 0.5 2.5 mV Input Bias Current IB 1.0 5.0 pA Input Offset Current IOS 2.0 pA Input Common-mode Voltage Range VCM 1.8 V Common-mode Rejection Ratio CMRR Large Signal Voltage Gain GV Input Offset Voltage Drift ΔVOS/ΔT Output Voltage Swing from Rail Output Current VOL/VOH Sink Source -0.2 VCM=-0.2V to 1.8V 55 75 dB RL=10kΩ connect to VCC/2， VO=0.2V to 1.4V 90 110 dB 2.0 μV/ °C VID=0.5V, RL=1kΩ connect to VCC/2 VID=0.5V, RL=10kΩ connect to VCC/2 50 3 15 mV ISINK VOUT=VCC 8 10 ISOURCE VOUT=0V 5 8.5 Closed-loop Output Impedance ZOUT f=10kHz, G=1 (Note 2) Power Supply Rejection Ratio PSRR VCC=1.6V to 5.0V, VCM=0.5V Supply Current 30 ICC 70 VCM<VCC-1V, IOUT=0 mA 9 Ω 80 dB 70 90 μA 1.6V AC Electrical Characteristics VCC=1.6V, VEE=0, VCM=VCC/2, TA=25°C, unless otherwise noted. Parameter Symbol Gain Bandwidth Product GBP Conditions Min Typ Max Unit RL=100kΩ 1.0 MHz 0.32 V/μs Slew Rate SR G=1, 1V Step, CL=100pF, RL=10kΩ Phase Margin φM RL=100kΩ 67 Degrees f=1kHz, G=1, VIN=1Vpp RL=10kΩ, CL=100pF -70 dB f=1kHz 27 nV/ Hz Total Harmonic Distortion+Noise THD+N Voltage Noise Density en Note 2: G is Closed-Loop Voltage Gain. Nov. 2011 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 5 Advance Datasheet Single Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifier AZV831 1.8V DC Electrical Characteristics VCC=1.8V, VEE=0, VCM=VCC/2, TA=25°C, unless otherwise noted. Parameter Symbol Input Offset Voltage Conditions Min Typ Max Unit VOS 0.5 2.5 mV Input Bias Current IB 1.0 5.0 pA Input Offset Current IOS 2.0 pA Input Common-mode Voltage Range VCM 2.0 V Common-mode Rejection Ratio CMRR Large Signal Voltage Gain GV Input Offset Voltage Drift ΔVOS/ΔT Output Voltage Swing from Rail Output Current VOL/VOH Sink Source -0.2 VCM=-0.2V to 2.0V 55 75 dB RL=10kΩ connect to VCC/2， VO=0.2V to 1.6V 90 112 dB 2.0 μV/ °C VID=0.5V, RL=1kΩ connect to VCC/2 VID=0.5V, RL=10kΩ connect to VCC/2 50 3 15 mV ISINK VOUT=VCC 12 16 ISOURCE VOUT=0V 10 14 Closed-loop Output Impedance ZOUT f=10kHz, G=1 (Note 2) Power Supply Rejection Ratio PSRR VCC=1.6V to 5.0V, VCM=0.5V Supply Current 25 ICC 70 VCM<VCC-1V, IOUT=0 mA 9 Ω 80 dB 70 90 μA 1.8V AC Electrical Characteristics VCC=1.8V, VEE=0, VCM=VCC/2, TA=25°C, unless otherwise noted. Parameter Symbol Gain Bandwidth Product GBP Conditions Min Typ Max Unit RL=100kΩ 1.0 MHz 0.34 V/μs Slew Rate SR G=1, 1V Step, CL=100pF, RL=10kΩ Phase Margin φM RL=100kΩ 67 Degrees f=1kHz, G=1, VIN=1Vpp RL=10kΩ, CL=100pF -70 dB f=1kHz 27 nV/ Hz Total Harmonic Distortion+Noise THD+N Voltage Noise Density en Note 2: G is Closed-Loop Voltage Gain. Nov. 2011 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 6 Advance Datasheet Single Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifier AZV831 3.0V DC Electrical Characteristics VCC=3.0V, VEE=0, VCM=VCC/2, TA=25°C, unless otherwise noted. Parameter Symbol Input Offset Voltage Conditions Min Typ Max Unit VOS 0.5 2.5 mV Input Bias Current IB 1.0 5.0 pA Input Offset Current IOS 2.0 pA Input Common-mode Voltage Range VCM 3.3 V Common-mode Rejection Ratio CMRR Large Signal Voltage Gain GV Input Offset Voltage Drift VCM=-0.3V to 1.9V 62 80 VCM=-0.3V to 3.3V 58 75 90 110 95 115 RL=1kΩ connect to VCC/2， VO=0.2V to 2.8V RL=10kΩ connect to VCC/2, VO=0.1V to 2.9V VOL/VOH Sink Source VIN=0.5V, RL=1kΩ connect to VCC/2 VIN=0.5V, RL=10kΩ connect to VCC/2 20 50 3 15 mV ISINK VOUT=VCC 50 60 ISOURCE VOUT=0V 50 65 ZOUT f=10kHz, G=1 (Note 2) Power Supply Rejection Ratio PSRR VCC=1.6V to 5.0V, VCM=0.5V ICC μV/ °C 2.0 Closed-loop Output Impedance Supply Current dB dB ΔVOS/ΔT Output Voltage Swing from Rail Output Current -0.3 70 VCM<VCC-1V, IOUT=0 mA 9 Ω 80 dB 70 90 μA 3.0V AC Electrical Characteristics VCC=3.0V, VEE=0, VCM=VCC/2, TA=25°C, unless otherwise noted. Parameter Symbol Gain Bandwidth Product GBP Conditions Min Typ Max Unit RL=100kΩ 1.0 MHz 0.40 V/μs Slew Rate SR G=1, 2V Step, CL=100pF, RL=10kΩ Phase Margin φM RL=100kΩ 67 Degrees f=1kHz, G=1, VIN=1Vpp RL=10kΩ, CL=100pF -70 dB f=1kHz 27 nV/ Hz Total Harmonic Distortion+Noise THD+N Voltage Noise Density en Note 2: G is Closed-Loop Voltage Gain. Nov. 2011 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 7 Advance Datasheet Single Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifier AZV831 5.0V DC Electrical Characteristics VCC=5.0V, VEE=0, VCM=VCC/2, TA=25°C, unless otherwise noted. Parameter Symbol Input Offset Voltage Conditions Min Typ Max Unit VOS 0.5 2.5 mV Input Bias Current IB 1.0 5.0 pA Input Offset Current IOS 2.0 pA Input Common-mode Voltage Range VCM 5.3 V Common-mode Rejection Ratio CMRR Large Signal Voltage Gain GV Input Offset Voltage Drift VCM=-0.3V to 3.9V 70 85 VCM=-0.3V to 5.3V 65 90 80 92 85 98 RL=1kΩ connect to VCC/2, VO=0.2V to 4.8V RL=10kΩ connect to VCC/2, VO=0.05V to 4.95V VOL/VOH Sink Source 2.0 VIN=0.5V, RL=1kΩ connect to VCC/2 VIN=0.5V, RL=10kΩ connect to VCC/2 25 4 VOUT=VCC 100 150 ISOURCE VOUT=0V 110 185 f=1kHz, G=1 (note 2) Power Supply Rejection Ratio PSRR Supply Current ICC VCC=1.6V to 5.0V, VCM=0.5V μV/°C 50 mV ISINK Closed-loop Output Impedance dB dB ΔVOS/ΔT Output Voltage Swing from Rail Output Current -0.3 70 VCM<VCC-1V, IOUT=0 15 mA 9 Ω 80 dB 70 90 μA 5V AC Electrical Characteristics VCC=5.0V, VEE=0, VCM=VCC/2, TA=25°C, unless otherwise noted. Parameter Symbol Gain Bandwidth Product GBP Conditions Min Typ Max Unit RL=100kΩ 1.0 MHz 0.45 V/μs Slew Rate SR G=1, 2V Step, CL=100pF, RL=10kΩ Phase Margin φM RL=100kΩ 67 Degrees f=1kHz, G=1, VIN=1VPP RL=10kΩ,CL=100pF -70 dB f=1kHz 27 nV/ Hz THD+N THD+N Voltage Noise Density en Note 2: G is Closed-loop Voltage Gain. Nov. 2011 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 8 Advance Datasheet Single Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifier AZV831 Typical Performance Characteristics 100 95 90 90 85 70 Supply Current (μA) Supply Current (uA) 80 60 50 40 30 20 75 70 65 IOUT=0mA 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 50 45 -40 5.5 Supply Voltage (V) 0 20 40 60 80 100 O Figure 5. Supply Current vs. Temperature 1 1 VCC=1.6V VCC=1.8V 0 0 Input Offset Voltage (mV) Input Offset Voltage (mV) -20 Temperature ( C) Figure 4. Supply Current vs. Supply Voltage -1 -2 -3 -4 o TA=-40 C o TA=25 C -5 -6 -0.5 No Load VCC=1.6V VCC=1.8V VCC=3.0V VCC=5.0V 60 55 10 -10 0.5 80 0.5 1.0 -2 -3 o -4 TA=-40 C o TA=25 C -5 o TA=85 C 0.0 -1 1.5 -6 -0.5 2.0 o TA=85 C 0.0 0.5 1.0 1.5 2.0 2.5 Input Common Mode Voltage (V) Input Common Mode Voltage (V) Figure 6. Offset Voltage vs. Common Mode Voltage Figure 7. Offset Voltage vs. Common Mode Voltage Nov. 2011 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 9 Advance Datasheet Single Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifier AZV831 Typical Performance Characteristics (Continued) 1 4 VCC=3.0V VCC=5.0V 0 Input Offset Voltage (mV) Input Offset Voltage (mV) 2 -1 -2 -3 -4 o TA=-40 C o TA=25 C -5 0 -2 o TA=-40 C -4 o TA=25 C o TA=85 C -6 0 1 2 3 o TA=85 C -6 4 Input Common Mode Voltage (V) Output Voltage to Supply Rail (mV) Output Voltage to Supply Rail (mV) 1000 VCC=1.6V, VEE=0V 10 Sink Current Source Current 0.1 1 3 4 5 6 VCC=1.8V, VEE=0V 100 10 Sink Current Source Current 1 10 Output Current (mA) 0.1 1 10 Output Current (mA) Figure 10. Output Voltage vs. Output Current Nov. 2011 2 Figure 9. Offset Voltage vs. Common Mode Voltage 100 1 1 Input Common Mode Voltage (V) Figure 8. Offset Voltage vs. Common Mode Voltage 1000 0 Figure 11. Output Voltage vs. Output Current Rev. 1. 1 BCD Semiconductor Manufacturing Limited 10 Advance Datasheet Single Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifier AZV831 Typical Performance Characteristics (Continued) 1000 Output Voltage to Supply Rail (mV) Output Voltage to Supply Rail (mV) 10000 VCC=3.0V, VEE=0V 100 10 Sink Current Source Current 1 0.01 0.1 1 VCC=5.0V, VEE=0V 1000 100 10 Sink Current Source Current 1 0.01 10 0.1 1 Output Current (mA) Figure 12. Output Voltage vs. Output Current Output Short Circuit Current (Source) (mA) Output Short Circuit Current (Sink) (mA) 200 VCC=1.6V VCC=1.8V VCC=3.0V VCC=5.0V VEE=0V VO short to VCC 120 100 80 60 40 20 0 -40 -20 0 20 40 100 Figure 13. Output Voltage vs. Output Current 160 140 10 Output Current (mA) 60 80 100 o Temperature ( C) 180 VEE=0V VO short to VEE 160 140 VCC=1.6V VCC=1.8V VCC=3.0V VCC=5.0V 120 100 80 60 40 20 0 -40 -20 0 20 40 60 80 100 o Temperature ( C) Figure 14. Output Short Circuit Current vs. Temperature Figure 15. Output Short Circuit Current vs. Temperature Nov. 2011 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 11 Advance Datasheet Single Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifier AZV831 Typical Performance Characteristics (Continued) 160 120 VEE=0V VO short to VCC VEE=0V VO short to VEE 140 Output Short Current (Source) (mA) Output Short Current (Sink) (mA) 100 80 60 40 20 120 100 80 60 40 20 0 0 1 2 3 4 1 5 2 3 Figure 16. Output Short Circuit Current vs. Supply Voltage 27 Output Voltage to Supply Rail (mV) Output Voltage to Supply Rail (mV) RL=10kΩ 3.5 Positive Swing Negative Swing 3.0 2.5 2.0 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 RL=1kΩ 26 Positive Swing Negative Swing 25 24 23 22 21 20 0.8 2.6 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 Dual Supply Voltage (V) Dual Supply Voltage (V) Figure 18. Output Voltage Swing vs. Supply Voltage Nov. 2011 5 Figure 17. Output Short Circuit Current vs. Supply Voltage 4.0 1.5 0.8 4 Supply Voltage (V) Supply Voltage (V) Figure 19. Output Voltage Swing vs. Supply Voltage Rev. 1. 1 BCD Semiconductor Manufacturing Limited 12 Advance Datasheet Single Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifier AZV831 Typical Performance Characteristics (Continued) 48 10 VCC=0.8V,VEE=-0.8V VCC=2.5V,VEE=-2.5V VCC=0.8V,VEE=-0.8V VCC=2.5V,VEE=-2.5V 36 RL=1kΩ 32 28 Positive Swing 24 Negative Swing 20 16 12 -40 -20 0 20 40 60 80 7 RL=10kΩ 6 5 4 Negative Swing 3 2 Positive Swing 1 0 -40 100 -20 o 0 20 40 60 80 100 o Temperature ( C) Temperature ( C) Figure 20. Output Voltage Swing vs. Temperature Figure 21. Output Voltage Swing vs. Temperature 100 70 100 60 90 60 90 50 80 50 80 40 70 40 70 30 60 30 60 20 50 RL=100kΩ RL=10kΩ RL=1kΩ RL=8Ω 10 0 40 30 VCC=0.8V, VEE=-0.8V -10 -20 10k 100k Open Loop Gain (dB) 70 Phase Margin (Degree) Open Loop Gain (dB) VCC=0.9V,VEE=-0.9V VCC=1.5V,VEE=-1.5V VCC=0.9V,VEE=-0.9V VCC=1.5V,VEE=-1.5V 8 0 -10 10 -20 40 30 VCC=0.8V, VEE=-0.8V RL=100kΩ 20 10 10k Frequency (Hz) 100k 1M Frequency (Hz) Figure 22. Gain and Phase vs. Frequency and Resistive Load Nov. 2011 CL=100pF CL=200pF CL=300pF 10 20 1M 50 20 Phase Margin (Degree) 40 9 Output Voltage to Supply Rail (mV) Output Voltage to Supply Rail (mV) 44 Figure 23. Gain and Phase vs. Frequency and Capacitive Load Rev. 1. 1 BCD Semiconductor Manufacturing Limited 13 Advance Datasheet Single Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifier AZV831 100 70 100 60 90 60 90 50 80 50 80 40 70 40 70 30 60 30 60 20 50 0 40 30 VCC=0.8V, VEE=-0.8V RL=10kΩ -10 -20 10k 100k 10 0 20 -10 10 -20 40 30 20 10 1M 10k Frequency (Hz) 100k 1M Frequency (Hz) Figure 24. Gain and Phase vs. Frequency and Capacitive Load Figure 25. Gain and Phase vs. Frequency and Resistive Load 100 70 100 60 90 60 90 50 80 50 80 40 70 40 70 30 60 30 60 20 50 CL=100pF CL=200pF CL=300pF VCC=0.9V, VEE=-0.9V RL=100kΩ 10 0 -10 40 30 -20 10k 100k 50 20 CL=100pF CL=200pF CL=300pF 10 0 20 -10 10 -20 40 30 VCC=0.9V, VEE=-0.9V RL=10kΩ 20 10 10k 1M 100k 1M Frequency (Hz) Frequency (Hz) Figure 26. Gain and Phase vs. Frequency and Capacitive Load Nov. 2011 Open Loop Gain (dB) 70 Phase Margin (Degree) Open Loop Gain (dB) 50 RL=100kΩ RL=10kΩ RL=1kΩ RL=8Ω VCC=0.9V, VEE=-0.9V Phase Margin (Degree) 10 Open Loop Gain (dB) CL=100pF CL=200pF CL=300pF 20 Phase Margin (Degree) 70 Phase Margin (Degree) Open Loop Gain (dB) Typical Performance Characteristics (Continued) Figure 27. Gain and Phase vs. Frequency and Capacitive Load Rev. 1. 1 BCD Semiconductor Manufacturing Limited 14 Advance Datasheet Single Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifier AZV831 100 70 100 60 90 60 90 50 80 50 80 40 70 40 70 30 60 30 60 50 RL=100kΩ RL=10kΩ RL=1kΩ RL=8Ω 0 40 30 VCC=1.5V, VEE=-1.5V -10 -20 10k 100k 20 50 CL=100pF CL=200pF CL=300pF 10 0 20 -10 10 -20 1M 30 VCC=1.5V, VEE=-1.5V RL=100kΩ 20 10 10k 100k Frequency (Hz) 1M Frequency (Hz) Figure 28. Gain and Phase vs. Frequency and Resistive Load Figure 29. Gain and Phase vs. Frequency and Capacitive Load 100 70 100 60 90 60 90 50 80 50 80 40 70 40 70 30 60 30 60 20 50 CL=100pF CL=200pF CL=300pF 10 0 40 30 VCC=1.5V, VEE=-1.5V RL=10kΩ -10 -20 10k 100k 20 0 -10 10 -20 1M 50 RL=100kΩ RL=10kΩ RL=1kΩ RL=8Ω 10 20 40 30 VCC=2.5V, VEE=-2.5V 20 10 10k Frequency (Hz) 100k 1M Frequency (Hz) Figure 30. Gain and Phase vs. Frequency and Capacitive Load Nov. 2011 Open Loop Gain (dB) 70 Phase Margin (Degree) Open Loop Gain (dB) 40 Phase Margin (Degree) 10 Open Loop Gain (dB) 20 Phase Margin (Degree) 70 Phase Margin (Degree) Open Loop Gain (dB) Typical Performance Characteristics (Continued) Figure 31. Gain and Phase vs. Frequency and Resistive Load Rev. 1. 1 BCD Semiconductor Manufacturing Limited 15 Advance Datasheet Single Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifier AZV831 70 100 60 90 60 90 50 80 50 80 40 70 40 70 30 60 30 60 20 50 CL=100pF CL=200pF CL=300pF 10 0 40 30 VCC=2.5V, VEE=-2.5V RL=100kΩ -10 -20 10k 100k 20 10 0 20 -10 10 -20 50 CL=100pF CL=200pF CL=300pF 40 30 VCC=2.5V, VEE=-2.5V RL=10kΩ Phase Margin (Degree) 100 Open Loop Gain (dB) 70 Phase Margin (Degree) Open Loop Gain (dB) Typical Performance Characteristics (Continued) 20 10 1M 10k 100k 1M Frequency (Hz) Frequency (Hz) Figure 32. Gain and Phase vs. Frequency and Capacitive Load Figure 33. Gain and Phase vs. Frequency and Capacitive Load 1000 10 100 1 THD (%) Output Impedance (Ω) VCC=1.6V to 5V VEE=0V 10 G=1 G=10 G=100 1 100 1k 10k G=1, RL=10kΩ, CL=100pF VCC=0.8V,VEE=-0.8V VCC=0.9V,VEE=-0.9V VCC=1.5V,VEE=-1.5V VCC=2.5V,VEE=-2.5V 0.1 0.01 1E-3 0.01 100k 0.1 1 Frequency (Hz) Output Voltage (V) Figure 34. Output Impedance vs. Frequency Figure 35. THD+N vs. Output Voltage Nov. 2011 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 16 Advance Datasheet Single Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifier AZV831 Typical Performance Characteristics (Continued) 0.1 VCC=5.0V, VEE=0V, G=1 Input Voltage Noise (V/ Hz) THD (%) Bandwidth<10Hz to 22kHz VCC=0.8V, VEE=-0.8V VCC=0.9V, VEE=-0.9V VCC=1.5V, VEE=-1.5V VCC=2.5V, VEE=-2.5V 0.01 100n VOUT=100mVRMS, AV=1, RL=10kΩ, CL=100pF 1E-3 100 1k 10n 10k Frequency (Hz) VCC=1.6V VEE=0V VOUT 50mV/div 10k Figure 37. Input Voltage Noise Density VCC=1.8V VEE=0V VIN 50mV/div VOUT 50mV/div CL=100pF, RL=100kΩ, AV=1 CL=100pF, RL=100kΩ, AV=1 Time (2μs/div) Time (2μs/div) Figure 38. Small Signal Pulse Response Nov. 2011 1k Frequency (Hz) Figure 36. THD+N vs. Frequency VIN 50mV/div 100 Figure 39. Small Signal Pulse Response Rev. 1. 1 BCD Semiconductor Manufacturing Limited 17 Advance Datasheet Single Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifier AZV831 Typical Performance Characteristics (Continued) VCC=3.0V VEE=0V VIN 50mV/div VOUT 50mV/div VIN 50mV/div VOUT 50mV/div CL=100pF, RL=100kΩ, AV=1 CL=100pF, RL=100kΩ, AV=1 Time (2μs/div) Time (2μs/div) Figure 40. Small Signal Pulse Response VCC=1.6V VEE=0V VIN 500mV/div VOUT 500mV/div Figure 41. Small Signal Pulse Response VCC=1.8V VEE=0V VIN 500mV/div VOUT 500mV/div CL=200pF, RL=100kΩ, AV=1 CL=200pF, RL=100kΩ, AV=1 Time (10μs/div) Time (10μs/div) Figure 42. Large Signal Pulse Response Nov. 2011 VCC=5.0V VEE=0V Figure 43. Large Signal Pulse Response Rev. 1. 1 BCD Semiconductor Manufacturing Limited 18 Advance Datasheet Single Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifier AZV831 Typical Performance Characteristics (Continued) VCC=3.0V VEE=0V VIN 1V/div VCC=5.0V VEE=0V VIN 2V/div VOUT 1V/div VOUT 2V/div CL=200pF, RL=100kΩ, AV=1 CL=200pF, RL=100kΩ, AV=1 Time (10μs/div) Time (10μs/div) Figure 44. Large Signal Pulse Response Figure 45. Large Signal Pulse Response VCC=1.6V VEE=0V VIN 500mV/div VIN 500mV/div VOUT 500mV/div VOUT 500mV/div CL=200pF, RL=10kΩ, AV=1 Nov. 2011 VCC=1.8V VEE=0V CL=200pF, RL=10kΩ, AV=1 Time (10μs/div) Time (10μs/div) Figure 46. Large Signal Pulse Response Figure 47. Large Signal Pulse Response Rev. 1. 1 BCD Semiconductor Manufacturing Limited 19 Advance Datasheet Single Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifier AZV831 Typical Performance Characteristics (Continued) VCC=3.0V VEE=0V VIN 1V/div VIN 2V/div VOUT 1V/div VOUT 2V/div CL=200pF, RL=10kΩ, AV=1 CL=200pF, RL=10kΩ, AV=1 Time (10μs/div) Time (10μs/div) Figure 48. Large Signal Pulse Response VIN VCC=2.5V VEE=-2.5V VIN 1V/div Figure 49. Large Signal Pulse Response VCC=2.5V VEE=-2.5V VIN 50mV/div VOUT VOUT 1V/div VOUT 1V/div CL=100pF, RL=100kΩ, AV=-50 VIN=0 to -100mV f=1kHz, RL=10kΩ, VIN=6VPP, AV=1 Time (200μs/div) Time (20μs/div) Figure 50. No phase Reversal Nov. 2011 VCC=5.0V VEE=0V Figure 51. Overload Recovery Time Rev. 1. 1 BCD Semiconductor Manufacturing Limited 20 Advance Datasheet Single Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifier AZV831 Typical Performance Characteristics (Continued) VIN 50mV/div VCC=2.5V VEE=-2.5V VOUT 1V/div CL=100pF, RL=100kΩ, AV =-50, VIN=0 to -100mV Time (20μs/div) Figure 52. Overload Recovery Time Nov. 2011 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 21 Advance Datasheet Single Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifier AZV831 Mechanical Dimensions SC-70-5 Unit: mm(inch) 0° 2.000(0.079) 8° 2.200(0.087) 0.150(0.006) 0.350(0.014) 0.200(0.008) 1.150(0.045) 1.350(0.053) 2.150(0.085) 2.450(0.096) 0.260(0.010) 0.460(0.018) 0.525(0.021)REF 0.650(0.026)TYP 0.000(0.000) 0.100(0.004) 1.200(0.047) 1.400(0.055) 0.080(0.003) 0.150(0.006) 0.900(0.035) 0.900(0.035) 1.000(0.039) 1.100(0.043) Nov. 2011 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 22 Advance Datasheet Single Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifier AZV831 Mechanical Dimensions (Continued) SOT-23-5 Unit: mm(inch) 1.500(0.059) 1.700(0.067) 0.300(0.012) 0.600(0.024) 0.100(0.004) 0.200(0.008) 2.950(0.116) 2.650(0.104) 2.820(0.111) 3.020(0.119) 0.200(0.008) 0.700(0.028) REF 0.300(0.012) 0.400(0.016) 0° 8° 1.800(0.071) 2.000(0.079) 0.000(0.000) MAX 1.450(0.057) 0.950(0.037) TYP 0.150(0.006) 0.900(0.035) 1.300(0.051) Nov. 2011 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 23 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor BCD Semiconductor Manufacturing Manufacturing Limited Limited reserves reserves the the right right to to make make changes changes without without further further notice notice to to any any products products or or specifispecifications herein. cations herein. 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