DSEI 2x61 Fast Recovery Epitaxial Diode (FRED) VRSM VRRM V V 1000 1000 IFAVM = 2x60 A VRRM = 1000 V trr = 35 ns Type DSEI 2x 61-10P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM 100 60 800 A A A IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 500 A -40...+150 150 -40...+150 °C °C °C 180 W 2500 3000 V~ V~ 1.5 - 2.0 14 - 18 Nm lb.in. 18 g TVJ TVJM Tstg Ptot TC = 25°C VISOL 50/60 Hz, RMS IISOL ≤ 1 mA Md Mounting torque (M4) t = 1 min t=1s Weight Symbol Conditions Characteristic Values (per diode) typ. max. IR TVJ = 25°C VR = VRRM TVJ = 25°C VR = 0.8 • VRRM TVJ = 125°C VR = 0.8 • VRRM 3 0.5 14 mA mA mA VF IF = 60 A; 1.8 2.3 V V VT0 rT For power-loss calculations only TVJ = TVJM 1.65 8.3 V mΩ TVJ = 150°C TVJ = 25°C RthJC RthCK 0.7 0.05 Features • • • • • • 2 independent FRED in 1 package Isolation voltage 3000 V~ Planar passivated chips Leads suitable for PC board soldering Very short recovery time Soft recovery behaviour Applications • Antiparallel diode for high frequency switching devices • Anti saturation diode • Snubber diode • Free wheeling diode in converters and motor control circuits • Rectifiers in switch mode power supplies (SMPS) • Inductive heating and melting • Uninterruptible power supplies (UPS) • Ultrasonic cleaners and welders Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling capability • Low noise switching • Small and light weight K/W K/W trr IF = 1 A; -di/dt = 200 A/µs VR = 30 V; TVJ = 25°C 35 50 ns IRM VR = 540 V; IF = 60 A; -diF/dt = 480 A/µs L ≤ 0.05 µH; TVJ = 100°C 32 36 A dS dA a Creeping distance on surface Creeping distance in air Allowable acceleration min. 11.2 min. 11.2 max. 50 mm mm m/s² IXYS reserves the right to change limits, test conditions and dimensions © 2001 IXYS All rights reserved 139 ① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5 Data according to IEC 60747 1-2 DSEI 2x 61-10P D5 Fig. 1 Forward current versus voltage drop. Fig. 2 Recovery charge versus -diF/dt. Fig. 3 Peak reverse current versus -diF/dt. Fig. 4 Dynamic parameters versus junction temperature. Fig. 5 Recovery time versus -diF/dt. Fig. 6 Peak forward voltage versus diF/dt. Dimensions Fig. 7 Transient thermal impedance junction to case. © 2001 IXYS All rights reserved 2-2