Diodes DMN1019UFDE 12v n-channel enhancement mode mosfet Datasheet

DMN1019UFDE
12V N-CHANNEL ENHANCEMENT MODE MOSFET
V(BR)DSS
Features
RDS(ON) max
Package
10mΩ @ VGS = 4.5V
12mΩ @ VGS = 2.5V
14mΩ @ VGS = 1.8V
18mΩ @ VGS = 1.5V
41mΩ @ VGS = 1.2V
12V
ID max
TA = +25°C

0.6mm profile – ideal for low profile applications

PCB footprint of 4mm2
11A
10
9A
8A
5A

Low Gate Threshold Voltage

Fast Switching Speed
U-DFN2020-6
Type E

ESD Protected Gate

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability
Description
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching
Mechanical Data
performance, making it ideal for high efficiency power management

applications.

Case: U-DFN2020-6 Type E
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Applications

Load Switching

Battery Management Application

Power Management Functions

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208 e4

Weight: 0.008 grams (approximate)
U-DFN2020-6
Type E
D
Pin1
G
ESD PROTECTED
Gate Protection
Diode
Pin Out
Bottom View
Bottom View
S
Equivalent Circuit
Ordering Information (Note 4)
Marking
N7
Part Number
DMN1019UFDE-7
Notes:
Reel size (inches)
7
Quantity per reel
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
YM
ADVANCE INFORMATION
Product Summary
N7
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
1
2012
Z
Feb
2
DMN1019UFDE
Datasheet number: DS35561 Rev. 5 - 2
Mar
3
N7 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
2013
A
Apr
4
May
5
2014
B
Jun
6
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2015
C
Jul
7
Aug
8
2016
D
Sep
9
Oct
O
2017
E
Nov
N
Dec
D
October 2013
© Diodes Incorporated
DMN1019UFDE
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Continuous Drain Current (Note 5) VGS = 4.5V
Symbol
VDSS
VGSS
Steady
State
t<5s
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Value
12
±8
11
9
ID
Units
V
V
A
14
11
3.0
100
ID
Maximum Continuous Body Diode Current
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
IS
IDM
A
A
A
Thermal Characteristics
Characteristic
Symbol
TA = +25°C
TA = +70°C
Steady state
t<5s
TA = +25°C
TA = +70°C
Steady state
t<5s
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
80
70
Single Pulse
RJA = 178 C/W
RJA(t) = r(t) * RJA
TJ - TA = P * RJA(t)
DUT on MRP
60
50
40
30
20
10
0
0.0001 0.001 0.01
0.1
1
10
100 1,000
t1, PULSE DURATION TIME (sec)
Fig. 1 Single Pulse Maximum Power Dissipation
DMN1019UFDE
Datasheet number: DS35561 Rev. 5 - 2
PD
RJA
PD
RJA
100
ID , DRAIN CURRENT (A)
90
Value
0.69
0.44
182
118
2.17
1.38
58
38
10
-55 to +150
RJc
TJ, TSTG
100
P(PK), PEAK TRANSIENT POIWER (W)
ADVANCE INFORMATION
Characteristic
Drain-Source Voltage
Gate-Source Voltage
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Units
W
°C/W
W
°C/W
°C
PW = 10µs
RDS(on)
Limited
10
DC
PW = 10s
1
PW = 1s
PW = 100ms
PW = 10ms
0.1
TJ(max) = 150°C
TA = 25°C
Single Pulse
DUT on 1 * MRP Board
VGS = 8V
0.01
0.01
PW = 1ms
PW = 100µs
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 2 SOA, Safe Operation Area
100
October 2013
© Diodes Incorporated
DMN1019UFDE
ADVANCE INFORMATION
r(t), TRANSIENT THERMAL RESISTANCE
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
RJA(t) = r(t) * RJA
RJA = 178C/W
Duty Cycle, D = t1/t2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Fig. 3 Transient Thermal Resistance
10
100
1,000
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
12
—
—
—
—
—
—
1
±2
V
µA
µA
VGS = 0V, ID = 250μA
VDS = 12V, VGS = 0V
VGS = ±8V, VDS = 0V
VGS(th)
0.35
RDS (ON)
—
|Yfs|
VSD
—
—
0.8
10
12
14
18
41
—
1.2
V
Static Drain-Source On-Resistance
—
7
8
10
14
28
28
0.8
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 9.7A
VGS = 2.5V, ID = 9A
VGS = 1.8V, ID = 8.1A
VGS = 1.5V, ID = 4.5A
VGS = 1.2V, ID = 2.4A
VDS = 4V, ID = 9.7A
VGS = 0V, IS = 10A
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
—
—
—
—
—
—
—
—
—
—
—
—
2425
396
375
1.1
50.6
27.3
3.4
5.2
7.6
22.2
57.6
16.8
—
—
—
—
—
—
—
—
—
—
—
—
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 8V)
Total Gate Charge (VGS = 4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
mΩ
S
V
Test Condition
pF
VDS = 10V, VGS = 0V,
f = 1.0MHz
Ω
VDS = 0V, VGS = 0V, f = 1MHz
nC
VDS = 4V, ID = 10A
ns
VDD = 4V, VGS = 10V, ID = 10A
RG = 1Ω, RL = 0.4Ω
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMN1019UFDE
Datasheet number: DS35561 Rev. 5 - 2
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October 2013
© Diodes Incorporated
30
25
25
ID , DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
30
20
15
10
5
VDS = 5.0V
20
15
TA = 150°C
10
T A = 125°C
TA = 85°C
5
TA = 25°C
0
0.5
1.0
1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 4 Typical Output Characteristic
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.016
0.012
VGS = 4.5V
0.008
VGS = 2.5V
VGS = 1.8V
0.004
0
0
5
10
15
20
25
ID, DRAIN-SOURCE CURRENT
Fig. 6 Typical On-Resistance vs.
Drain Current and Gate Voltage
0
2.0
0.4
0.8
1.2
1.6
VGS, GATE-SOURCE VOLTAGE
Fig. 5 Typical Transfer Characteristics
2.0
0.016
0.012
ID = 9.7A
ID = 4.5A
0.008
0.004
30
0.020
0
0
1
2
3
4
5
6
7
8
VGS, GATE VOLTAGE (V)
Fig. 7 Typical On-Resistance vs. Gate Voltage
2.0
VGS= 4.5V
0.016
0.012
TA = 150°C
TA = 125°C
TA = 85°C
0.008
TA = 25°C
TA = -55°C
0.004
0
TA = -55°C
0
0.020
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
ADVANCE INFORMATION
DMN1019UFDE
0
5
10
15
20
25
ID, DRAIN CURRENT
Fig. 8 Typical On-Resistance vs.
Drain Current and Temperature
DMN1019UFDE
Datasheet number: DS35561 Rev. 5 - 2
30
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1.8
1.6
VGS = 4.5V
ID = 5A
1.4
1.2
VGS = 10V
ID = 10A
1.0
0.8
0.6
50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 9 On-Resistance Variation with Temperature
October 2013
© Diodes Incorporated
VGS(th), GATE THRESHOLD VOLTAGE (V)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
1.2
0.020
0.016
VGS = 4.5V
ID = 5A
0.012
0.008
VGS = 10 V
ID = 10A
0.004
1.0
0.8
0.6
ID = 1mA
0.4
ID = 250µA
0.2
0
-50
0
-50
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 11 Gate Threshold Variation vs. Ambient Temperature
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 10 On-Resistance Variation with Temperature
10,000
30
f = 1MHz
CT, JUNCTION CAPACITANCE (pF)
IS, SOURCE CURRENT (V)
25
20
15
10
0
0
0.2
0.4
0.6
0.8
1.0
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig.12 Diode Forward Voltage vs. Current
Ciss
1,000
T A = 25°C
5
1.2
Coss
C rss
100
0
2
4
6
8
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 13 Typical Junction Capacitance
12
8
VGS GATE THRESHOLD VOLTAGE (V)
ADVANCE INFORMATION
DMN1019UFDE
VDS = -4V
ID = -10A
6
4
2
0
0
5
10 15 20 25 30 35 40 45 50
Qg, TOTAL GATE CHARGE (nC)
Fig. 14 Gate Charge
DMN1019UFDE
Datasheet number: DS35561 Rev. 5 - 2
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DMN1019UFDE
ADVANCE INFORMATION
Package Outline Dimensions
A1
A
A3
D
b1
K1
D2
E E2
L1
L(2X)
K2
Z(4X)
e
b(6X)
U-DFN2020-6
Type E
Dim
Min
Max
Typ
A
0.57
0.63 0.60
A1
0
0.05 0.03
A3
—
—
0.15
b
0.25
0.35 0.30
b1
0.185 0.285 0.235
D
1.95
2.05 2.00
D2
0.85
1.05 0.95
E
1.95
2.05 2.00
E2
1.40
1.60 1.50
e
—
—
0.65
L
0.25
0.35 0.30
L1
0.82
0.92 0.87
K1
—
—
0.305
K2
—
—
0.225
Z
—
—
0.20
All Dimensions in mm
Suggested Pad Layout
Dimensions
Y3 Y2
X2
Y1
X1
X (6x)
DMN1019UFDE
Datasheet number: DS35561 Rev. 5 - 2
C
C
X
X1
X2
Y
Y1
Y2
Y3
Value
(in mm)
0.650
0.400
0.285
1.050
0.500
0.920
1.600
2.300
Y (2x)
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October 2013
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DMN1019UFDE
ADVANCE INFORMATION
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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final and determinative format released by Diodes Incorporated.
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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labeling can be reasonably expected to result in significant injury to the user.
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failure of the life support device or to affect its safety or effectiveness.
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
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DMN1019UFDE
Datasheet number: DS35561 Rev. 5 - 2
7 of 7
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October 2013
© Diodes Incorporated