CREE C3D10060G Silicon carbide schottky diode Datasheet

C3D10060G
VRRM
Silicon Carbide Schottky Diode
Z-Rec Rectifier
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Qc
= 25 nC
Package
600-Volt Schottky Rectifier
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Positive Temperature Coefficient on VF
Benefits
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600 V
IF (TC=135˚C) = 14 A
®
Features
=
TO-263-2
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
AEC-Q101 Qualified and PPAP Capable
PIN 1
CASE
PIN 2
Applications
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Switch Mode Power Supplies
Power Factor Correction
- Typical PFC Pout : 1000W-2000W
Motor Drives
- Typical Power : 3HP-5HP
Part Number
Package
Marking
C3D10060G
TO-263-2
C3D10060
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Value
Unit
Test Conditions
VRRM
Repetitive Peak Reverse Voltage
600
V
VRSM
Surge Peak Reverse Voltage
600
V
VDC
DC Blocking Voltage
600
V
Continuous Forward Current
29.5
14
10
A
TC=25˚C
TC=135˚C
TC=152˚C
IF
IFRM
Repetitive Peak Forward Surge Current
67
44
A
TC=25˚C, tP=10 ms, Half Sine Wave, D=0.3
TC=110˚C, tP=10 ms, Half Sine Wave, D=0.3
IFSM
Non-Repetitive Peak Forward Surge Current
90
71
A
TC=25˚C, tP=10ms, Half Sine Wave, D=0.3
TC=110˚C, tP=10 ms, Half Sine Wave, D=0.3
IFSM
Non-Repetitive Peak Forward Surge Current
250
A
TC=25˚C, tP=10 µs, Pulse
Ptot
Power Dissipation
136
59
W
TC=25˚C
TC=110˚C
-55 to
+175
˚C
TJ , Tstg
1
Parameter
Operating Junction and Storage Temperature
C3D10060G Rev. F
Note
Electrical Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
VF
Forward Voltage
1.5
2.0
1.8
2.4
V
IR
Reverse Current
10
20
50
200
μA
VR = 600 V TJ=25°C
VR = 600 V TJ=175°C
QC
Total Capacitive Charge
25
nC
VR = 600 V, IF = 10 A
di/dt = 500 A/μs
TJ = 25°C
C
Total Capacitance
480
50
42
pF
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 200 V, TJ = 25˚C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
Note
IF = 10 A TJ=25°C
IF = 10 A TJ=175°C
Note:
1. This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance from Junction to Case
Typ.
Unit
1.2
°C/W
Typical Performance
20
IF Forward Current (A)
16
14
TJ =
TJ =
TJ =
TJ =
25°C
75°C
125°C
175°C
12
10
8
6
80
70
60
50
40
30
4
20
2
10
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VF Forward Voltage (V)
Figure 1. Forward Characteristics
2
90
IR Reverse Current (μA)
18
100
C3D10060G Rev. F
0
TJ = 25°C
TJ = 75°C
TJ = 125°C
TJ = 175°C
0 100 200 300 400 500 600 700 800 900
VR Reverse Voltage (V)
Figure 2. Reverse Characteristics
70
400
60
350
700
300
20% Duty*
30% Duty*
50% Duty*
70% Duty*
DC
40
30
250
20
10
200
150
600
Junction Capacitance C (pF)
50
C Capacitance (pF)
IF(PEAK) Peak Forward Current (A)
Typical Performance
500
400
300
200
100
0
1
10
100
1000
VR Reverse Voltage (V)
100
50
0
25
50
75
100
125
150
175
0
1
10 100 1000 VR Reverse Voltage (V)
TC Case Temperature (°C)
*Frequency > 1KHz
Figure 3. Current Derating
Zth (°C/W)
Figure 4. Capacitance vs. Reverse Voltage
Time (s)
Figure 5. Transient Thermal Impedance
3
C3D10060G Rev. F
Typical Performance
140
140.000
Power Dissipation (W)
120.000
120
100
100.000
80
80.000
60
60.000
40
40.000
20
20.000
0
0.000
25 50 75 100 125 150 175 25
50
75
100
125
150
175
TC Case Temperature (°C) Figure 6. Power Derating
Diode Model
Diode Model CSD10060
Vf
Vf T T==VTV+T+If*R
If*RT T
V
-3 -3)
0.98+(T
* -1.6*10
VTT==0.92
+ (Tj * J-1.35*10
)
-3
-3
R
=
0.04+(T
*
0.522*10
)
RT 0.052 + (T *J 0.29*10 )
T=
j
Note: Tj = Diode Junction Temperature In Degrees Celsius,
valid from 25°C to 175°C
VT
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C3D10060G Rev. F
RT
Package Dimensions
Package TO-263-2
POS
Inches
Millimeters
Min
Max
Min
Max
A
0.17
0.18
4.32
4.57
A1
-
0.01
-
0.25
b
0.028
0.037
0.71
0.94
b2
0.045
0.055
1.15
1.4
c
0.018
0.024
0.46
0.61
c2
0.048
0.055
1.22
1.4
D
0.35
0.37
8.89
9.4
D1
0.315
0.324
8.01
8.23
10.28
E
0.395
0.405
10.04
E1
0.31
0.318
7.88
8.08
e
0.1
BSC.
2.54
BSC.
L
0.58
0.62
14.73
15.75
L1
0.09
0.11
2.29
2.79
L2
0.045
0.055
1.15
1.39
L3
0.05
0.07
1.27
1.77
q
0°
8°
0°
8°
Note:
* Tab “M” may not be present
PIN 1
M
PIN 2
Recommended Solder Pad Layout
TO-263-2
Part Number
Package
Marking
C3D10060G
TO-263-2
C3D10060
Note: Recommended soldering profiles can be found in the applications note here:
http://www.cree.com/power_app_notes/soldering
5
C3D10060G Rev. F
CASE
Notes
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RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
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REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
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This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control
systems, or air traffic control systems.
Copyright © 2014 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
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C3D10060G Rev. F
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
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