C3D10060G VRRM Silicon Carbide Schottky Diode Z-Rec Rectifier • • • • • • • Qc = 25 nC Package 600-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF Benefits • • • • • • 600 V IF (TC=135˚C) = 14 A ® Features = TO-263-2 Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway AEC-Q101 Qualified and PPAP Capable PIN 1 CASE PIN 2 Applications • • • Switch Mode Power Supplies Power Factor Correction - Typical PFC Pout : 1000W-2000W Motor Drives - Typical Power : 3HP-5HP Part Number Package Marking C3D10060G TO-263-2 C3D10060 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Value Unit Test Conditions VRRM Repetitive Peak Reverse Voltage 600 V VRSM Surge Peak Reverse Voltage 600 V VDC DC Blocking Voltage 600 V Continuous Forward Current 29.5 14 10 A TC=25˚C TC=135˚C TC=152˚C IF IFRM Repetitive Peak Forward Surge Current 67 44 A TC=25˚C, tP=10 ms, Half Sine Wave, D=0.3 TC=110˚C, tP=10 ms, Half Sine Wave, D=0.3 IFSM Non-Repetitive Peak Forward Surge Current 90 71 A TC=25˚C, tP=10ms, Half Sine Wave, D=0.3 TC=110˚C, tP=10 ms, Half Sine Wave, D=0.3 IFSM Non-Repetitive Peak Forward Surge Current 250 A TC=25˚C, tP=10 µs, Pulse Ptot Power Dissipation 136 59 W TC=25˚C TC=110˚C -55 to +175 ˚C TJ , Tstg 1 Parameter Operating Junction and Storage Temperature C3D10060G Rev. F Note Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions VF Forward Voltage 1.5 2.0 1.8 2.4 V IR Reverse Current 10 20 50 200 μA VR = 600 V TJ=25°C VR = 600 V TJ=175°C QC Total Capacitive Charge 25 nC VR = 600 V, IF = 10 A di/dt = 500 A/μs TJ = 25°C C Total Capacitance 480 50 42 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 200 V, TJ = 25˚C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz Note IF = 10 A TJ=25°C IF = 10 A TJ=175°C Note: 1. This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol RθJC Parameter Thermal Resistance from Junction to Case Typ. Unit 1.2 °C/W Typical Performance 20 IF Forward Current (A) 16 14 TJ = TJ = TJ = TJ = 25°C 75°C 125°C 175°C 12 10 8 6 80 70 60 50 40 30 4 20 2 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VF Forward Voltage (V) Figure 1. Forward Characteristics 2 90 IR Reverse Current (μA) 18 100 C3D10060G Rev. F 0 TJ = 25°C TJ = 75°C TJ = 125°C TJ = 175°C 0 100 200 300 400 500 600 700 800 900 VR Reverse Voltage (V) Figure 2. Reverse Characteristics 70 400 60 350 700 300 20% Duty* 30% Duty* 50% Duty* 70% Duty* DC 40 30 250 20 10 200 150 600 Junction Capacitance C (pF) 50 C Capacitance (pF) IF(PEAK) Peak Forward Current (A) Typical Performance 500 400 300 200 100 0 1 10 100 1000 VR Reverse Voltage (V) 100 50 0 25 50 75 100 125 150 175 0 1 10 100 1000 VR Reverse Voltage (V) TC Case Temperature (°C) *Frequency > 1KHz Figure 3. Current Derating Zth (°C/W) Figure 4. Capacitance vs. Reverse Voltage Time (s) Figure 5. Transient Thermal Impedance 3 C3D10060G Rev. F Typical Performance 140 140.000 Power Dissipation (W) 120.000 120 100 100.000 80 80.000 60 60.000 40 40.000 20 20.000 0 0.000 25 50 75 100 125 150 175 25 50 75 100 125 150 175 TC Case Temperature (°C) Figure 6. Power Derating Diode Model Diode Model CSD10060 Vf Vf T T==VTV+T+If*R If*RT T V -3 -3) 0.98+(T * -1.6*10 VTT==0.92 + (Tj * J-1.35*10 ) -3 -3 R = 0.04+(T * 0.522*10 ) RT 0.052 + (T *J 0.29*10 ) T= j Note: Tj = Diode Junction Temperature In Degrees Celsius, valid from 25°C to 175°C VT 4 C3D10060G Rev. F RT Package Dimensions Package TO-263-2 POS Inches Millimeters Min Max Min Max A 0.17 0.18 4.32 4.57 A1 - 0.01 - 0.25 b 0.028 0.037 0.71 0.94 b2 0.045 0.055 1.15 1.4 c 0.018 0.024 0.46 0.61 c2 0.048 0.055 1.22 1.4 D 0.35 0.37 8.89 9.4 D1 0.315 0.324 8.01 8.23 10.28 E 0.395 0.405 10.04 E1 0.31 0.318 7.88 8.08 e 0.1 BSC. 2.54 BSC. L 0.58 0.62 14.73 15.75 L1 0.09 0.11 2.29 2.79 L2 0.045 0.055 1.15 1.39 L3 0.05 0.07 1.27 1.77 q 0° 8° 0° 8° Note: * Tab “M” may not be present PIN 1 M PIN 2 Recommended Solder Pad Layout TO-263-2 Part Number Package Marking C3D10060G TO-263-2 C3D10060 Note: Recommended soldering profiles can be found in the applications note here: http://www.cree.com/power_app_notes/soldering 5 C3D10060G Rev. F CASE Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 6 C3D10060G Rev. F Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power