DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BZX55 series Voltage regulator diodes Product specification Supersedes data of April 1992 1996 Apr 26 Philips Semiconductors Product specification Voltage regulator diodes BZX55 series FEATURES DESCRIPTION • Total power dissipation: max. 500 mW Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. • Tolerance series: ±5% The diodes are available in the normalized E24 ±5% tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V (BZX55-C2V4 to BZX55-C75). • Working voltage range: nom. 2.4 to 75 V (E24 range) • Non-repetitive peak reverse power dissipation: max. 40 W. APPLICATIONS handbook, halfpage k • Low voltage stabilizers or voltage references. a MAM239 The diodes are type branded. Fig.1 Simplified outline (SOD27; DO-35) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. − 250 UNIT IF continuous forward current IZSM non-repetitive peak reverse current tp = 100 µs; square wave; Tj = 25 °C prior to surge Ptot total power dissipation Tamb = 50 °C; note 1 − 400 mW Tamb = 50 °C; note 2 − 500 mW tp = 100 µs; square wave; Tj = 25 °C prior to surge − 40 W tp = 8.3 ms; square wave; Tj ≤ 150 °C prior to surge − 30 W PZSM non-repetitive peak reverse power dissipation mA see Table “Per type” Tstg storage temperature −65 +200 °C Tj junction temperature − 200 °C MIN. MAX. − 1.0 Notes 1. Device mounted on a printed circuit-board without metallization pad; lead length max. 2. Tie-point temperature ≤ 50 °C; lead length 8 mm. ELECTRICAL CHARACTERISTICS Total series Tj = 25 °C; unless otherwise specified. SYMBOL VF 1996 Apr 26 PARAMETER forward voltage CONDITIONS IF = 100 mA; see Fig.4 2 UNIT V DIFFERENTIAL RESISTANCE rdif (Ω) at IZ at IZtest TEST TEMP. COEFF. SZ (mV/K) CURRENT at IZtest IZtest (mA) see Figs 5 and 6 MIN. MAX. MAX. MAX. TYP. 2V4 2.28 2.56 600 85 −1.8 5 2V7 2.5 2.9 600 85 −1.9 3V0 2.8 3.2 600 85 3V3 3.1 3.5 600 3V6 3.4 3.8 3V9 3.7 4V3 DIODE CAP. Cd (pF) at f = 1 MHz; at VR = 0 V MAX. REVERSE CURRENT at REVERSE VOLTAGE IR (µA) at at Tj = 25 °C Tj = 150 °C VR (V) NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 µs; Tamb = 25 °C 3 MAX. 450 50 100 1.0 6.0 5 450 10 50 1.0 6.0 −2.1 5 450 4 40 1.0 6.0 85 −2.2 5 450 2 40 1.0 6.0 600 85 −2.4 5 450 2 40 1.0 6.0 4.1 600 85 −2.4 5 450 2 40 1.0 6.0 4.0 4.6 600 80 −2.4 5 450 1 20 1.0 6.0 4V7 4.4 5.0 600 70 −1.4 5 300 0.5 10 1.0 6.0 5V1 4.8 5.4 550 50 −0.8 5 300 0.1 2 1.0 6.0 5V6 5.2 6.0 450 30 1.6 5 300 0.1 2 1.0 6.0 6V2 5.8 6.6 200 10 2.2 5 200 0.1 2 2.0 6.0 6V8 6.4 7.2 150 8 3.0 5 200 0.1 2 3.0 6.0 7V5 7.0 7.9 50 7 3.8 5 150 0.1 2 5.0 4.0 8V2 7.7 8.7 50 7 4.5 5 150 0.1 2 6.15 4.0 9V1 8.5 9.6 50 10 5.5 5 150 0.1 2 6.8 3.0 10 9.4 10.6 70 15 6.5 5 90 0.1 2 7.5 3.0 11 10.4 11.6 70 20 7.7 5 85 0.1 2 8.25 2.5 12 11.4 12.7 90 20 8.4 5 85 0.1 2 9.0 2.5 13 12.4 14.1 110 26 9.8 5 80 0.1 2 9.75 2.5 15 13.8 15.6 110 30 11.3 5 75 0.1 2 11.25 2.0 16 15.3 17.1 170 40 12.8 5 75 0.1 2 12.0 1.5 18 16.8 19.1 170 50 14.4 5 70 0.1 2 13.5 1.5 20 18.8 21.2 220 55 16.0 5 60 0.1 2 15.0 1.5 Product specification MAX. BZX55 series MAX. Philips Semiconductors BZX55CXXX WORKING VOLTAGE VZ (V) at IZtest Voltage regulator diodes 1996 Apr 26 Per type Tj = 25 °C; unless otherwise specified. at IZ at IZtest TEMP. COEFF. TEST SZ (mV/K) CURRENT at IZtest IZtest (mA) see Figs 5 and 6 MIN. MAX. MAX. MAX. TYP. 22 20.8 23.3 220 55 18.7 24 22.8 25.6 220 80 27 25.1 28.9 220 30 28.0 32.0 33 31.0 36 34.0 39 DIODE CAP. Cd (pF) at f = 1 MHz; at VR = 0 V REVERSE CURRENT at REVERSE VOLTAGE IR (µA) at at Tj = 25 °C Tj = 150 °C VR (V) NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 µs; Tamb = 25 °C 4 MAX. MAX. MAX. MAX. 5 60 0.1 2 16.5 1.25 20.4 5 55 0.1 2 18.0 1.25 80 22.9 5 50 0.1 2 20.25 1.0 220 80 27.0 5 50 0.1 2 22.25 1.0 35.0 220 80 29.7 5 45 0.1 2 24.75 0.9 38.0 220 80 32.4 5 45 0.1 2 27.0 0.8 37.0 41.0 500 90 35.1 2.5 45 0.1 2 29.25 0.7 43 40.0 46.0 600 90 38.7 2.5 40 0.1 2 32.25 0.6 47 44.0 50.0 700 110 44.0 2.5 40 0.1 2 35.25 0.5 51 48.0 54.0 700 125 49.0 2.5 40 0.1 2 38.25 0.4 56 52.0 60.0 1000 135 55.0 2.5 40 0.1 2 42.0 0.3 62 58.0 66.0 1000 150 62.0 2.5 35 0.1 2 46.5 0.3 68 64.0 72.0 1000 200 70.0 2.5 35 0.1 2 51.0 0.25 75 70.0 79.0 1500 250 78.0 2.5 35 0.1 2 56.25 0.2 Philips Semiconductors DIFFERENTIAL RESISTANCE rdif (Ω) Voltage regulator diodes 1996 Apr 26 BZX55CXXX WORKING VOLTAGE VZ (V) at IZtest Note 1. For BZX55-C2V4 up to C36 IZ = 1 mA; for C39 up to C75 IZ = 0.5 mA. Product specification BZX55 series Philips Semiconductors Product specification Voltage regulator diodes BZX55 series THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length 8 mm 300 K/W Rth j-a thermal resistance from junction to ambient lead length max.; see Fig.2 and note 1 380 K/W Note 1. Device mounted on a printed circuit-board without metallization pad. GRAPHICAL DATA MBG930 103 handbook, full pagewidth δ=1 Rth j-a 0.75 0.50 0.33 0.20 (K/W) 102 0.10 0.05 0.02 0.01 ≤0.001 10 tp δ= T 1 10−1 1 102 10 103 104 5 T tp (ms) Fig.2 Thermal resistance from junction to ambient as a function of pulse duration. 1996 Apr 26 tp 105 Philips Semiconductors Product specification Voltage regulator diodes BZX55 series MBG781 MBG801 103 handbook, halfpage 300 handbook, halfpage PZSM (W) IF (mA) 102 200 (1) 10 100 (2) 1 10−1 1 duration (ms) 0 0.6 10 0.8 VF (V) 1.0 (1) Tj = 25 °C (prior to surge). (2) Tj = 150 °C (prior to surge). Fig.3 Maximum permissible non-repetitive peak reverse power dissipation versus duration. Fig.4 Forward current as a function of forward voltage; typical values. MBG783 MBG782 0 10 handbook, halfpage handbook, halfpage 12 SZ (mV/K) SZ (mV/K) 4V3 11 10 −1 9V1 5 3V9 8V2 7V5 6V8 3V6 −2 6V2 5V6 5V1 0 3V3 4V7 3V0 2V4 2V7 −3 0 20 40 IZ (mA) −5 60 BZX55-C2V4 to C4V3. Tj = 25 to 150 °C. Fig.5 4 8 12 16 IZ (mA) 20 BZX55-C4V7 to C12. Tj = 25 to 150 °C. Temperature coefficient as a function of working current; typical values. 1996 Apr 26 0 Fig.6 6 Temperature coefficient as a function of working current; typical values. Philips Semiconductors Product specification Voltage regulator diodes BZX55 series PACKAGE OUTLINE ndbook, full pagewidth 0.56 max 1.85 max 4.25 max 25.4 min 25.4 min MLA428 - 1 Dimensions in mm. Fig.7 SOD27 (DO-35). DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Apr 26 7