ADPOW APTGT50H170T Full - bridge trench field stop igbt power module Datasheet

APTGT50H170T
Full - Bridge
Trench + Field Stop IGBT®
Power Module
VCES = 1700V
IC = 50A @ Tc = 80°C
VBUS
Q3
G3
OUT1
E1
E3
OUT2
Q2
Q4
G2
G4
E2
E4
NTC1
NTC2
0/VBU S
G3
G4
E3
E4
VBUS
OUT2
Benefits
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
OUT1
0/VBUS
E1
E2
NTC2
G1
G2
NTC1
Features
• Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration
• Internal thermistor for temperature monitoring
Absolute maximum ratings
Symbol
VCES
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Safe Operating Area
TC = 25°C
Max ratings
1700
75
50
100
±20
312
Tj = 125°C
100A @ 1600V
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
A
May, 2005
G1
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-5
APTGT50H170T – Rev 0
Q1
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
APTGT50H170T
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter Saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Dynamic Characteristics
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Td(off)
Turn-off Delay Time
Tf
Td(on)
Tr
Td(off)
Tf
Eon
Eoff
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Reverse diode ratings and characteristics
Symbol Characteristic
VRRM
VGE = 0V, VCE = 1700V
Tj = 25°C
VGE = 15V
IC = 50A
Tj = 125°C
VGE = VCE , IC = 1mA
VGE = 20V, VCE = 0V
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
5.0
Min
Inductive Switching (25°C)
VGE = 15V
VBus = 900V
IC = 50A
R G = 10 Ω
Inductive Switching (125°C)
VGE = 15V
VBus = 900V
IC = 50A
R G = 10 Ω
Test Conditions
Typ
2.0
2.4
5.8
Typ
4400
180
150
370
40
Max
Unit
250
2.4
µA
6.5
400
V
nA
Max
Unit
pF
ns
650
180
400
50
800
300
16
15
Min
Typ
ns
mJ
Max
1700
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
VR=1700V
IF(A V)
Maximum Average Forward Current
50% duty cycle
VF
Diode Forward Voltage
IF = 50A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 50A
VR = 900V
di/dt =800A/µs
Unit
V
Tj = 25°C
Tj = 125°C
250
500
Tc = 80°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
50
1.8
1.9
385
Tj = 125°C
Tj = 25°C
490
14
Tj = 125°C
23
µA
A
2.2
V
ns
µC
May, 2005
IRM
V
APT website – http://www.advancedpower.com
2-5
APTGT50H170T – Rev 0
Symbol
Cies
Coes
Cres
Td(on)
Tr
Min
APTGT50H170T
Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information).
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.15 K
RT =
R 25
Max
Unit
kΩ
K
Min
Typ
Max
0.4
0.7
Unit
T: Thermistor temperature
Symbol Characteristic
VISOL
TJ
TSTG
TC
Torque
Wt
Typ
50
3952

 1 1  RT : Thermistor value at T
exp B 25 / 85 
− 
 T25 T 

Thermal and package characteristics
RthJC
Min
IGBT
Diode
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To Heatsink
M5
3400
-40
-40
-40
1.5
°C/W
V
150
125
100
4.7
160
°C
N.m
g
APT website – http://www.advancedpower.com
3-5
APTGT50H170T – Rev 0
May, 2005
Package outline (dimensions in mm)
APTGT50H170T
Typical Performance Curve
Output Characteristics
100
TJ = 125°C
T J=25°C
TJ =125°C
60
V GE=9V
20
0
0.5
1
1.5
2 2.5
VCE (V)
3
3.5
4
0
1
3
V CE (V)
4
5
50
VCE = 900V
VGE = 15V
RG = 10Ω
T J = 125°C
T J=25°C
80
40
60
E (mJ)
TJ=125°C
40
30
Eon
Eoff
20
Er
TJ =125°C
20
Er
10
0
0
5
6
7
8
9
10
11
12
0
13
20
Switching Energy Losses vs Gate Resistance
80
100
125
VCE = 900V
VGE =15V
IC = 50A
TJ = 125°C
100
Eon
IC (A)
30
60
Reverse Bias Safe Operating Area
50
40
40
IC (A)
V GE (V)
20
Eoff
75
50
VGE=15V
TJ=125°C
RG =10Ω
25
10
Er
0
0
10
20 30 40 50 60
Gate Resistance (ohms)
0.4
0.3
0.25
0.2
0.15
0
80
400
800
1200
1600
2000
VCE (V)
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.45
0.35
70
IGBT
0.9
0.7
May, 2005
0
0.5
0.3
0.1
0.05
0
0.00001
0.1
0.05
Single Pulse
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
APT website – http://www.advancedpower.com
4-5
APTGT50H170T – Rev 0
E (mJ)
2
Energy losses vs Collector Current
Transfert Characteristics
100
IC (A)
VGE=13V
VGE =15V
40
0
Thermal Impedance (°C/W)
VGE =20V
80
IC (A)
IC (A)
Output Characteristics (V GE=15V)
100
90
80
70
60
50
40
30
20
10
0
APTGT50H170T
Forward Characteristic of diode
100
90
VCE =900V
D=50%
RG=10 Ω
T J=125°C
T C=75°C
ZCS
25
20
ZVS
15
80
T J=25°C
70
IC (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
30
10
60
50
T J=125°C
40
T J=125°C
30
20
hard
switching
5
10
0
0
0
10
20
30
40
IC (A)
50
60
70
0
80
0.5
1
1.5
VF (V)
2
2.5
3
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
Thermal Impedance (°C/W)
0.8
0.7
Diode
0.9
0.6
0.5
0.4
0.3
0.2
0.1
0.7
0.5
0.3
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
5-5
APTGT50H170T – Rev 0
May, 2005
rectangular Pulse Duration (Seconds)
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