Weitron BC856 General purpose transistor pnp silicon Datasheet

BC856A/B-BC857A/B/C
BC858A/B/C-BC859B/C
General Purpose Transistor
PNP Silicon
COLLECTOR
3
MARKING DIAGRAM
3
3
1
1
BASE
2
SOT-23
XX = Device
Code (See
2 Table Below)
1
2
EMITTER
Maximum Ratings ( TA=25 C unless otherwise noted)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
BC856
BC857
BC858,BC859
BC856
BC857
BC858,BC859
Symbol
VCEO
Value
-65
-45
-30
-80
-50
-30
-5.0
-100
VCBO
Emitter-Base VOltage
Collector Current-Continuous
VEBO
IC
Unit
V
V
V
mAdc
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board (1)
(Note 1.)TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Symbol
Junction and Storage, Temperature
Unit
225
1.8
mW
mW/ C
C/W
PD
R θJA
556
PD
300
2.4
R θJA
417
mW
mW/ C
C/W
TJ,Tstg
-55 to +150
C
Total Device Dissipation Alumina
Substrate, (Note 2.) TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Max
1.F R -5=1.0 x 0.75 x 0.062 in. 2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.
Electrical Characteristics
(TA=25 C Unless Otherwise noted)
Symbol
Characteristics
Min
Typ
Max
Unit
Off Characteristics
Collector-Emitter Breakdown Voltage
(IC= -10mA)
BC856 Series
BC857 Series
BC858, BC859 Series
V(BR)CEO
-65
-45
-30
-
-
V
Collector-Emitter Breakdown Voltage
(IC=-10 µA ,VEB=0)
BC856 Series
BC857 Series
BC858, BC859 Series
V(BR)CES
-80
-50
-30
-
-
V
Collector-Base Breakdown Voltage
(IC=-10 µA)
BC856 Series
BC857 Series
BC858, BC859 Series
V(BR)CBO
-80
-50
-30
-
-
V
Emitter-Base Breakdown Voltage
(IE=-1.0 µA)
BC856 Series
BC857 Series
BC858, BC859 Series
V(BR)EBO
-5.0
-5.0
-5.0
-
-
V
ICBO
-
-
-15
-4.0
nA
mA
Collector Cutoff Current (VCB=-30V)
(VCB=-30V, TA=150 C)
WEITRON
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1/4
Rev A 12-Apr-05
BC856A/B-BC857A/B/C
BC858A/B/C-BC859B/C
Electrical Characteristics
WE IT R ON
(TA=25 C Unless Otherwise noted)
Characteristics
Symbol
Min
Typ
Max
125
220
420
90
150
270
180
290
520
250
475
800
-0.3
-0.65
Unit
On Characteristics
DC Current Gain
(IC= -10uA, VCE=-5.0V)
(IC= -2.0mA,VCE=-5.0V)
hFE
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B
BC858C
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B, BC859B
BC857C, BC858C, BC859C
Collector-Emitter Saturation Voltage
(IC= -10mA, IB=-0.5mA)
(IC= -100mA, IB=-5.0mA)
VCE(sat)
-
-
Base-Emitter Saturation Voltage
(IC= -10mA, IB=-0.5mA)
(IC= -100mA, IB=-5.0mA)
VBE(sat)
-
-0.7
-0.9
Base-Emitter On Voltage
(IC= -10mA, IB=-0.5mA)
(IC= -100mA, IB=-5.0mA)
VBE(on)
-0.6
-
fT
100
Cobo
-
-
V
V
-
-
-0.75
-0.82
-
-
-
4.5
V
Small-signal Characteristics
Current-Gain-Bandwidth Product
(IC= -10mA, VCE= -5.0VDC, f=100MHz)
Output Capacitance
(VCB= -10V, f=1.0MHz)
Noise Figure
(IC= -0.2mA, VCE= -5.0Vdc, Rs=2.0k Ω , f=1.0kHz, BW=200Hz)
BC856, BC857, BC858 Series
BC859, Series
MHz
pF
dB
NF
-
-
10
4.0
Device Marking
BC856A=3A; BC856B=3B; BC857A=3E; BC857B=3F; BC857C=3G
BC858A=3J; C858B=3K; BC858C=3L; BC859B=4B; BC859C=4C
WEITRON
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2/4
Rev A 12-Apr-05
BC856A/B-BC857A/B/C
BC858A/B/C-BC859B/C
WE IT R ON
-1.0
2.0
-0.9
1.5
VCE=10V
TA=25 C
1.0
V, VOLTAGE (VOLTS)
hFE,NORMALIZED DC CURRENT GAIN
BC857/BC858/BC859 Series
0.7
0.5
TA=25 C
-0.7
VBE(ON)@VCE= -10V
-0.6
-0.5
-0.4
-0.3
-0.2
0.3
0.2
VCE(sat)@IC/BC=10
-0.1
-0.2
-0.5 -1.0
-2.0
-5.0
-10
-20
-50
0
-0.1
-100 -200
-0.2
-0.5
IC, COLLECTOR CURRENT (mAdc)
-1.6
-1.2
-0.8
IC= -200mA
IC= -20mA
IC= -100mA
-0.4
0
-0.02
-0.1
-1.0
IB, BASE CURRENT (mA)
-10
-20
qVB, TEMPERATURE COEFFICIENT (mV/ C)
TA=25 C
IC= -50mA
C,CAPACITANCE (pF)
TA=25 C
5.0
Cob
2.0
-1.0
-2.0
-4.0 -6.0
-10
-20
-30 -40
fT, CURRENT-GAIN-BANDWIDTH PRODUCT (MHz)
Cib
1.0
-0.4 -0.6
Figure 5. Capacitances
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-20
-50
-100
-55 C to +125 C
1.2
1.6
2.0
2.4
2.8
-0.2
-1.0
-10
IC, COLLECTOR CURRENT (mA)
-100
400
300
200
VCE= -10V
TA= 25 C
150
100
80
60
40
30
20
-0.5
-1.0
-2.0 -3.0
-5.0
-10
-20
-30
-50
IC, COLLECTOR CURRENT (mAdc)
VR, REVERSE VOLTAGE (VOLTS)
WEITRON
-10
Figure 4. Base-Emitter Temperature Coefficient
10
3.0
-5.0
1.0
Figure 3. Collector Saturation Region
7.0
-2.0
Firure2. "Saturation" And "On" Voltage
-2.0
IC=
-10mA
-1.0
IC, COLLECTOR CURRENT (mAdc)
Figure1.Normalized DC Current Gain
VCE, COLLECTOR- EMITTER VOLTAGE (V)
VBE(sat)@IC/BC=10
-0.8
Figure 6. Current-Gain- Bandwidth Product
3/4
Rev A 12-Apr-05
BC856A/B-BC857A/B/C
BC858A/B/C-BC859B/C
WE IT R ON
-1.0
TJ=25 C
VCE= -5.0V
TA= 25 C
-0.8
2.0
V,Voltage (Volts)
hFE,DC CURRENT GAIN (NORMALIZED)
BC856 Series
1.0
0.5
VBE(sat)@IC/IB=10
-0.6
VBE@VCE=-5.0V
-0.4
-0.2
0.2
VCE(sat)@IC/IB=10
-0.1 -0.2
-1.0 -2.0
-5.0 -10 -20
0
-50 -100 -200
-0.2
-0.5
-1.0
IC, COLLECTOR CURRENT (AMP)
-2.0
-1.6
IC=
-10mA
-20mA
-100mA
-50mA
-200mA
-0.8
-0.4
TJ=25 C
0
-0.02
-0.05 -0.1
-0.2
-0.5
-1.0
-2.0
-5.0
-10
-1.8
-55 C to 125 C
-2.6
-3.3
-0.5
-1.0
fT, CURRENT-GAIN-BANDWIDTH PRODUCT
C. CAPACTIANCE (pF)
Cob
4.0
-5.0
-10
-20
-10
-20
-50
-100
-200
VCE=-5.0V
200
100
50
20
-10
-100
IC, COLLECTOR CURRENT (mA)
Figure 12.Current-Gain-Bandwidth Product
Figure 11. Capacitance
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500
-1.0
-50 -100
VR, REVERSE VOLTAGE (VOLTS)
WEITRON
-5.0
Figure 10. Base-Emitter Temperature Coefficient
10
8.0
-2.0
-2.0
IC, COLLECTOR CURRENT (mA)
Cib
-1.0
-100 -200
qVB for VBE
-0.2
TJ=25 C
-0.5
-50
-2.2
-20
40
2.0
-0.1 -0.2
-20
-1.4
Figure 9. Collector Saturation Region
6.0
-10
-1.0
IB, BASE CURRENT (mA)
20
-5.0
Figure 8. "ON" Voltage
qVB TEMPERATURE COEFFICIENT (mV/= C)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7. DC Current Gain
-1.2
-2.0
IC, COLLECTOR CURRENT(mA)
4/4
Rev A 12-Apr-05
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