Infineon AUIRFS3206 Automotive grade Datasheet

AUIRFS3206
AUIRFSL3206
AUTOMOTIVE GRADE
HEXFET® Power MOSFET
Features
 Advanced Process Technology
 Ultra Low On-Resistance
 Enhanced dV/dT and dI/dT capability
 175°C Operating Temperature
 Fast Switching
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
 Automotive Qualified *
VDSS
RDS(on) typ.
Package Type
AUIRFSL3206
TO-262
AUIRFS3206
D2-Pak
2.4m
max.
ID (Silicon Limited)
3.0m
210A
ID (Package Limited)
120A
D
D
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications
Base part number
60V
D2Pak
S
D
G
TO-262
AUIRFS3206
AUIRFSL3206
S
G
G
Gate
D
Drain
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tape and Reel Left
800
S
Source
Orderable Part Number
AUIRFSL3206
AUIRFS3206
AUIRFS3206TRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
210
ID @ TC = 100°C
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
150
120
IDM
PD @TC = 25°C
Pulsed Drain Current 
Maximum Power Dissipation
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited) 
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery 
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Symbol
RJC
RJA
Parameter
Junction-to-Case 
Junction-to-Ambient (PCB Mount), D2 Pak
Units
A
840
300
W
2.0
± 20
170
See Fig.14,15, 22a, 22b
5.0
-55 to + 175
W/°C
V
mJ
A
mJ
V/ns
°C
300
Typ.
Max.
Units
–––
–––
0.50
40
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
2015-10-27
AUIRFS/SL3206
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Typ. Max. Units
V
Conditions
60
–––
–––
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
0.07
–––
V/°C Reference to 25°C, ID = 5mA 
RDS(on)
Static Drain-to-Source On-Resistance
–––
2.4
3.0
m VGS = 10V, ID = 75A 
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
RG
Forward Trans conductance
Gate Resistance
IDSS
Drain-to-Source Leakage Current
210
–––
–––
–––
0.7
–––
–––
–––
20
–––
–––
250
S VDS = 50V, ID = 75A

VDS = 60V, VGS = 0V
µA
VDS = 48V,VGS = 0V,TJ =125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
–––
–––
100
-100
V(BR)DSS
Drain-to-Source Breakdown Voltage
Min.
nA
VGS = 0V, ID = 250µA
VDS = VGS, ID = 150µA
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
120
29
35
85
19
82
55
83
6540
720
170
–––
–––
–––
–––
–––
–––
–––
–––
–––
Crss
Reverse Transfer Capacitance
–––
360
–––
Coss eff.(ER)
Effective Output Capacitance (Energy Related)
–––
1040
–––
VDD = 30V
ID = 75A
ns
RG= 2.7
VGS = 10V
VGS = 0V
VDS = 50V
pF ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 0V to 48V
Coss eff.(TR)
Effective Output Capacitance (Time Related)
–––
1230
–––
VGS = 0V, VDS = 0V to 48V
Min.
Typ. Max. Units
–––
––– 210
–––
–––
840
–––
–––
–––
–––
–––
–––
–––
33
37
41
53
2.1
1.3
50
56
62
80
–––
Diode Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
ID = 75A
VDS = 30V
nC
VGS = 10V
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V TJ = 25°C,IS = 75A,VGS = 0V 
TJ = 25°C
VDD = 51V
ns
TJ = 125°C
IF = 75A,
TJ = 25°C di/dt = 100A/µs 
nC
TJ = 125°C
A TJ = 25°C 
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 120A. Note that
current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
 Repetitive rating; pulse width limited by max. junction temperature.
 Limited by TJmax, starting TJ = 25°C, L = 0.023mH, RG = 25, IAS = 120A, VGS =10V. Part not recommended for use above this value.
 ISD 75A, di/dt 360A/µs, VDD V(BR)DSS, TJ  175°C.
 Pulse width 400µs; duty cycle  2%.
 Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
 Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
 When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
 R is measured at TJ approximately 90°C.
2
2015-10-27
AUIRFS/SL3206
1000
1000
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
100
4.5V
 60µs PULSE WIDTH
Tj = 25°C
BOTTOM
100
4.5V
 60µs PULSE WIDTH
Tj = 175°C
10
10
0.1
1
10
100
0.1
VDS , Drain-to-Source Voltage (V)
10
100
Fig. 2 Typical Output Characteristics
2.5
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
1000
ID, Drain-to-Source Current)
1
VDS , Drain-to-Source Voltage (V)
Fig. 1 Typical Output Characteristics
TJ = 175°C
10
TJ = 25°C
1
VDS = 25V
 60µs PULSE WIDTH
ID = 75A
VGS = 10V
2.0
1.5
1.0
0.5
0.1
2.0
3.0
4.0
5.0
6.0
7.0
-60 -40 -20
8.0
20
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
10000
Coss = Cds + Cgd
8000
Ciss
6000
4000
Coss
2000
20 40 60 80 100 120 140 160 180
Fig. 4 Normalized On-Resistance vs. Temperature
Fig. 3 Typical Transfer Characteristics
12000
0
TJ , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
ID= 75A
VDS = 48V
16
VDS= 30V
VDS= 12V
12
8
4
Crss
0
1
10
100
0
0
40
80
120
160
200
VDS , Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
3
2015-10-27
AUIRFS/SL3206
10000
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
1000
TJ = 175°C
100
TJ = 25°C
10
1
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1000
1msec
100
10msec
10
1
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.1
VSD , Source-to-Drain Voltage (V)
Limited By Package
ID, Drain Current (A)
160
120
80
40
0
25
50
75
100
125
150
10
100
Fig 8. Maximum Safe Operating Area
V(BR)DSS , Drain-to-Source Breakdown Voltage
240
200
1
VDS , Drain-toSource Voltage (V)
Fig. 7 Typical Source-to-Drain Diode
80
ID = 5mA
75
70
65
60
55
-60 -40 -20
175
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
T C , Case Temperature (°C)
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10. Drain-to-Source Breakdown Voltage
2.0
EAS, Single Pulse Avalanche Energy (mJ)
800
1.5
Energy (µJ)
DC
0.1
0.1
1.0
0.5
0.0
ID
21A
33A
BOTTOM 120A
TOP
600
400
200
0
0
10
20
30
40
50
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
4
100µsec
60
25
50
75
100
125
150
175
Starting TJ, Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. Drain Current
2015-10-27
AUIRFS/SL3206
1
Thermal Response ( Z thJC )
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
J
0.01
J
1
R2
R2
Ri (°C/W)
R3
R3
C
2
1
3
2

3
Ci= iRi
Ci= iRi
SINGLE PULSE
( THERMAL RESPONSE )
0.001
R1
R1
I (sec)
0.106416
0.0001
0.201878
0.0012621
0.190923
0.011922
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
100
0.01
0.05
0.10
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming  j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Avalanche Current vs. Pulse width
EAR , Avalanche Energy (mJ)
200
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 120A
160
120
80
40
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
Fig 15. Maximum Avalanche Energy vs. Temperature
5
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 18a, 18b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 13, 14).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
2015-10-27
AUIRFS/SL3206
18
ID = 1.0A
4.0
16
ID = 1.0mA
ID = 250µA
3.5
14
ID = 150µA
12
IRRM - (A)
VGS(th) Gate threshold Voltage (V)
4.5
3.0
2.5
10
8
6
2.0
IF = 30A
VR = 51V
4
1.5
2
1.0
0
-75 -50 -25
0
25
50
75
TJ = 125°C
TJ = 25°C
100 200 300 400 500 600 700 800 900 1000
100 125 150 175
dif / dt - (A / µs)
TJ , Temperature ( °C )
Fig 16. Threshold Voltage vs. Temperature
Fig. 17 - Typical Recovery Current vs. dif/dt
18
350
16
300
14
250
QRR - (nC)
IRRM - (A)
12
10
8
6
4
2
0
IF = 45A
VR = 51V
200
150
IF = 30A
VR = 51V
100
TJ = 125°C
TJ = 25°C
50
TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / µs)
dif / dt - (A / µs)
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig. 19 - Typical Stored Charge vs. dif/dt
350
300
QRR - (nC)
250
200
150
100
50
0
IF = 45A
VR = 51V
TJ = 125°C
TJ = 25°C
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / µs)
Fig. 20 - Typical Stored Charge vs. dif/dt
6
2015-10-27
AUIRFS/SL3206
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V(BR)DSS
15V
tp
L
VDS
D.U.T
RG
IAS
20V
tp
DRIVER
+
V
- DD
A
0.01
Fig 22a. Unclamped Inductive Test Circuit
Fig 23a. Switching Time Test Circuit
I AS
Fig 22b. Unclamped Inductive Waveforms
Fig 23b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2
Fig 24a. Gate Charge Test Circuit
7
Qgd
Qgodr
Fig 24b. Gate Charge Waveform
2015-10-27
AUIRFS/SL3206
D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches))
D2Pak (TO-263AB) Part Marking Information
Part Number
AUFS3206
YWWA
IR Logo
XX

Date Code
Y= Year
WW= Work Week
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
2015-10-27
AUIRFS/SL3206
TO-262 Package Outline (Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
Part Number
AUFSL3206
YWWA
IR Logo
XX

Date Code
Y= Year
WW= Work Week
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
2015-10-27
AUIRFS/SL3206
D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
2015-10-27
AUIRFS/SL3206
Qualification Information
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Qualification Level
Moisture Sensitivity Level
D2-Pak
Machine Model
Human Body Model
ESD
MSL1
TO-262
Charged Device Model
RoHS Compliant
Class M4 (+/- 800V)†
AEC-Q101-002
Class H2 (+/- 4000V)†
AEC-Q101-001
Class C5 (+/- 2000V)†
AEC-Q101-005
Yes
† Highest passing voltage.
Revision History
Date
10/27/2015
Comments


Updated datasheet with corporate template
Corrected ordering table on page 1.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
11
2015-10-27