DMS3012SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE ® POWERDI Product Summary V(BR)DSS RDS(ON) 10mΩ @ VGS = 10V 30V 15mΩ @ VGS = 4.5V Features • ID TA = +25°C Package 12A POWERDI 3333-8 9.5A DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: Low RDS(ON) – minimize conduction losses Low VSD – reducing the losses due to body diode conduction Low Qrr – lower Qrr of the integrated Schottky reduces body diode switching losses Low gate capacitance (Qg/Qgs) ratio – reduces risk of shoot through or cross conduction currents at high frequencies Small form factor thermally efficient package enables higher density end products Description • This MOSFET is designed to minimize on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Occupies just 33% of the board area occupied by SO-8, enabling smaller end product • 100% UIS (Avalanche) rated • 100% Rg tested • • • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Applications • • • Backlighting Power Management Functions DC-DC Converters Mechanical Data • • • • • Case: POWERDI3333-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (approximate) Drain Pin 1 S S 8 7 6 5 S G Gate D D Source D D Top View 1 Bottom View 2 3 4 Top View Pin Configuration Internal Schematic Ordering Information (Note 4) Part Number DMS3012SFG-7 DMS3012SFG-13 Notes: Case POWERDI3333-8 POWERDI3333-8 Packaging 2000/Tape & Reel 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html. POWERDI is a registered trademark of Diodes Incorporated. DMS3012SFG Document number: DS35441 Rev. 8 - 2 1 of 8 www.diodes.com July 2014 © Diodes Incorporated DMS3012SFG YYWW Marking Information N12 = Product Type Marking Code YYWW = Date Code Marking YY = Last digit of year (ex: 11 = 2011) WW = Week code (01 ~ 53) N12 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 10V Steady State t < 10s Continuous Drain Current (Note 6) VGS = 4.5V Steady State t < 10s TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C Pulsed Drain Current (10μs pulse, duty cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 6) Avalanche Current (Note 7) L = 0.1mH Avalanche Energy (Note 7) L = 0.1mH ID Value 30 ±20 12 9.5 ID 16.0 12.7 A ID 9.5 7.5 A 13.0 10.3 90 3.5 17 43 ID IDM IS IAS EAS Units V V A A A A A mJ Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Symbol TA = +25°C TA = +70°C Steady state t < 10s TA = +25°C TA = +70°C Steady State t < 10s Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Notes: PD RθJA PD RθJA RθJC TJ, TSTG Value 0.89 0.55 145 74 2.2 1.3 58 31 11 -55 to +150 Units W °C/W W °C/W °C 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. POWERDI is a registered trademark of Diodes Incorporated. DMS3012SFG Document number: DS35441 Rev. 8 - 2 2 of 8 www.diodes.com July 2014 © Diodes Incorporated DMS3012SFG 100 P(PK), PEAK TRANSIENT POIWER (W) -ID, DRAIN CURRENT (A) 100 10 1 0.1 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 SOA, Safe Operation Area r(t), TRANSIENT THERMAL RESISTANCE 1 100 90 Single Pulse RθJA = 61° C/W RθJA(t) = r(t) * RθJA TJ - TA = P * RθJA(t) 80 70 60 50 40 30 20 10 0 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (sec) Fig. 2 Single Pulse Maximum Power Dissipation D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 RθJA(t) = r(t) * RθJA D = 0.005 RθJA = 61°C/W Duty Cycle, D = t1/t2 D = Single Pulse 0.001 0.00001 0.0001 0.001 1 0.01 0.1 t1, PULSE DURATION TIME (sec) Fig. 3 Transient Thermal Resistance 10 100 1,000 POWERDI is a registered trademark of Diodes Incorporated. DMS3012SFG Document number: DS35441 Rev. 8 - 2 3 of 8 www.diodes.com July 2014 © Diodes Incorporated DMS3012SFG Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 — — — — — — 100 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) RDS (ON) |Yfs| VSD 1.5 7.3 10 30 0.45 2.5 10 15 — 0.55 V Static Drain-Source On-Resistance 1.0 — — — — VDS = VGS, ID = 250μA VGS = 10V, ID = 13.5A VGS = 4.5V, ID = 11A VDS = 5V, ID = 10.0A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr — — — 0.26 — — — — — — — — — — 1296 415 204 1.6 14.7 31.6 3.5 5.0 15.8 27.8 29.7 13.6 13.1 4.3 4310 — — 2.6 — — — — — — — — — — Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge VGS = 4.5V Total Gate Charge VGS = 10V Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: mΩ S V pF pF pF Ω nC nC nC nC ns ns ns ns ns nC Test Condition VDS = 15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 15V, VGS = 10V, ID = 13.5A VGS = 10V, VDS = 15V, RG = 3Ω, ID = 8.8A IF = 13.5A, di/dt = 100A/μs IF = 13.5A, di/dt = 100A/μs 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 30 30 VGS = 4.5V 25 20 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25 VGS = 4.0V VGS = 3.5V 15 VGS = 3.0V 10 VGS = 2.5V 5 20 15 VGS = 150°C 10 VGS = 25°C VGS = -55°C VGS = 2.0V 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 4 Typical Output Characteristic VGS = 125°C VGS = 85°C 5 0 0 VDS = 5V 2 0 1.0 1.5 2.0 2.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 5 Typical Transfer Characteristic 3.0 POWERDI is a registered trademark of Diodes Incorporated. DMS3012SFG Document number: DS35441 Rev. 8 - 2 4 of 8 www.diodes.com July 2014 © Diodes Incorporated 0.05 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) DMS3012SFG 0.04 VGS = 2.5V 0.03 0.02 VGS = 4.5V 0.01 VGS = 10V 0 5 25 10 15 20 ID, DRAIN-SOURCE CURRENT (A) Fig. 6 Typical On-Resistance vs. Drain Current and Gate Voltage 0 TA = 125°C TA = 85°C TA = 25°C TA = -55°C 0 RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) TA = 150°C 30 1.6 VGS = 10V ID = 5A 1.4 VGS = 10V ID = 10A 1.2 1.0 0.8 0.6 -50 VGS = 10V VGS = 10V ID = 10A 0.01 0 -50 30 2.5 25 1.0 ID = 250µA -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 9 On-Resistance Variation with Temperature IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) VGS = 10V ID = 5A 3.0 ID = 1mA 30 0.02 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 8 On-Resistance Variation with Temperature 1.5 10 15 20 25 ID, DRAIN CURRENT (A) Fig. 7 Typical On-Resistance vs. Drain Current and Temperature 0.03 -25 2.0 5 0.5 20 15 TA = 25°C 10 5 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 10 Gate Threshold Variation vs. Ambient Temperature 0 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 11 Diode Forward Voltage vs. Current POWERDI is a registered trademark of Diodes Incorporated. DMS3012SFG Document number: DS35441 Rev. 8 - 2 5 of 8 www.diodes.com July 2014 © Diodes Incorporated DMS3012SFG 10,000 10,000 IDSS, LEAKAGE CURRENT (µA) C, CAPACITANCE (pF) f = 1MHz Ciss 1,000 Coss 1,000 TA = 125°C 100 0 5 10 15 V DS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 Typical Total Capacitance TA = 85°C 10 Crss 100 TA = 150°C TA = 25°C 20 1 0 10 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 13 Typical Leakage Current vs. Drain-Source Voltage 30 VGS, GATE-SOURCE VOLTAGE (V) 10 8 VDS = 15V ID = 13.5A 6 4 2 0 0 5 10 15 20 25 30 35 Qg, TOTAL GATE CHARGE (nC) Fig. 14 Gate-Source Voltage vs. Total Gate Charge POWERDI is a registered trademark of Diodes Incorporated. DMS3012SFG Document number: DS35441 Rev. 8 - 2 6 of 8 www.diodes.com July 2014 © Diodes Incorporated DMS3012SFG Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A A3 A1 D D2 L (4x) 1 Pin 1 ID 4 b2 (4x) E E2 8 Z (4x) 5 e L1 (3x) b (8x) POWERDI3333-8 Dim Min Max Typ D 3.25 3.35 3.30 E 3.25 3.35 3.30 D2 2.22 2.32 2.27 E2 1.56 1.66 1.61 A 0.75 0.85 0.80 A1 0 0.05 0.02 A3 0.203 − − b 0.27 0.37 0.32 b2 0.20 − − L 0.35 0.45 0.40 L1 0.39 − − e 0.65 − − Z 0.515 − − All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X G 8 Y2 5 G1 Y1 Y 1 4 Y3 X2 Dimensions C G G1 Y Y1 Y2 Y3 X X2 Value (in mm) 0.650 0.230 0.420 3.700 2.250 1.850 0.700 2.370 0.420 C POWERDI is a registered trademark of Diodes Incorporated. DMS3012SFG Document number: DS35441 Rev. 8 - 2 7 of 8 www.diodes.com July 2014 © Diodes Incorporated DMS3012SFG IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2014, Diodes Incorporated www.diodes.com POWERDI is a registered trademark of Diodes Incorporated. DMS3012SFG Document number: DS35441 Rev. 8 - 2 8 of 8 www.diodes.com July 2014 © Diodes Incorporated