Vishay DG2741DQ-T1 Low-voltage, 0.8-ohm ron, dual spst analog switch Datasheet

DG2741/2742/2743
Vishay Siliconix
New Product
Low-Voltage, 0.8- rON, Dual SPST Analog Switch
FEATURES
BENEFITS
APPLICATIONS
D Low Voltage Operation (1.6 V to 3.6 V)
D Low On-Resistance - rDS(on):
0.8 W @ 2.7 V
D High Current Handling Capacity:
150-mA Continuous
D Off-Isolation: −56 dB @ 1 MHz
D Fast Switching: 25 ns tON
D Low Charge Injection—QINJ: 5.8 pC
D Low Power Consumption: t1 mW
D ESD Protection u2,000 V
D High Accuracy
D High Bandwidth
D TTL and Low Voltage Logic
Compatibility
D Low Power Consumption
D Reduced PCB Space (SOT23-8
and MSOP-8)
D Mixed Signal Routing
D Portable and Battery Operated
Systems
D Low Voltage Data Acquisition
D Modems
D PCMCIA Cards
DESCRIPTION
The DG2741/2742/2743 are low voltage, single supply, dual
SPST analog switches. Designed for high performance
switching of analog signals, the DG2741/2742/2743 provide
low on-resistance (0.8 Ω @ +2.7 V), fast speed (tON, tOFF @
35 ns and 33 ns) and the ability to handle signals over the
entire analog voltage range.
When operated on a +3-V supply, control pins are compatible
with 1.8-V digital logic. Additionally,on-resistance flatness and
matching (0.18 Ω and 0.08 Ω, respectively) offer high accuracy
between channels.
The DG2741 contains two normally open (NO) switches, the
DG2742 contains two normally closed (NC) switches, and the
DG2743 contains one normally open and one normally closed
switch. Break-before-make is guaranteed.
Built on Vishay Siliconix’s low voltage submicron CMOS
process, the DG2741/2742/2743 were designed to offer
solutions that extend beyond audio/video functions, to
providing the performance required for today’s demanding
mixed-signal switching in portable applications.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATIONDG2741
DG2741, MSOP-8
DG2741. SOT23-8
NO1
1
8
V+
IN1
1
8
NO1
COM1
2
7
IN1
V+
2
7
COM1
IN2
3
6
COM2
NO2
3
6
IN2
GND
4
5
NO2
COM2
4
5
GND
Top View
Top View
Device Marking: 2741
Device Marking: F3
TRUTH TABLE − DG2741
Document Number: 72708
S-32617—Rev. A, 29-Dec-03
Logic
Switch
0
Off
1
On
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DG2741/2742/2743
Vishay Siliconix
New Product
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATIONDG2742/DG2743
DG2742, MSOP-8
DG2742. SOT23-8
NC1
1
8
V+
IN1
1
8
NC1
COM1
2
7
IN1
V+
2
7
COM1
IN2
3
6
COM2
NC2
3
6
IN2
GND
4
5
NC2
COM2
4
5
GND
Top View
Top View
Device Marking: 2742
Device Marking: F4
TRUTH TABLE − DG2742
Logic
Switch
0
On
1
Off
DG2743, MSOP-8
DG2743. SOT23-8
NO1
1
8
V+
IN1
1
8
NO1
COM1
2
7
IN1
V+
2
7
COM1
IN2
3
6
COM2
NC2
3
6
IN2
GND
4
5
NC2
COM2
4
5
GND
Top View
Top View
Device Marking: 2743
Device Marking: F5
TRUTH TABLE − DG2743
Logic
Switch-1
Switch-2
0
Off
On
1
On
Off
ORDERING INFORMATION
Temp Range
Package
Part Number
DG2741DQ−T1
MSOP-8
DG2742DQ−T1
DG2743DQ−T1
-40
40 to 85°C
DG2741DS−T1
SOT23-8
DG2742DS−T1
DG2743DS−T1
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Document Number: 72708
S-32617—Rev. A, 29-Dec-03
DG2741/2742/2743
Vishay Siliconix
New Product
ABSOLUTE MAXIMUM RATINGS
Reference to GND
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +4 V
IN, COM, NC, NOa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V)
Continuous Current (NO, NC and COM Pins) . . . . . . . . . . . . . . . . "200 mA
Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "300 mA
(Pulsed at 1 ms, 10% duty cycle)
ESD per Method 3015.7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . u2 kV
Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150°C
Power Dissipation (Packages)c
6-Pin SC-70c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 mW
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by
internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 3.1 mW/_C above 70_C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (V+ = 1.8 V)
Test Conditions
Otherwise Unless Specified
Parameter
Symbol
V+ = 1.8 V, "10%, VIN = 0.4 or 1.0 Ve
Limits
−40 to 85_C
Tempa
Minb
Full
0
Typc
Maxb
Unit
V+
V
Analog Switch
Analog Signal Ranged
On-Resistance
rON Flatnessd
rON Matchd
Switch Off Leakage Currentf
VNO, VNC,
VCOM
rON
rON
Flatness
V+ = 1.8 V, VCOM = 0 to V+, INO, INC = 10 mA
Room
Fulld
0.9
2.5
4.0
0.25
Room
W
DrON
Room
INO(off),
INC(off)
Room
Fulld
−1
−10
1
10
Room
Fulld
−1
−10
1
10
Room
Fulld
−1
−10
1
10
1.0
ICOM(off)
Channel-On Leakage Current f
V+ = 1.8 V, VCOM = 0.9 V
INO, INC = 10 mA
ICOM(on)
V+ = 1.8 V
VNO, VNC = 0.2 V/2.0 V, VCOM = 1.5 V/0.3 V
V+ = 1.8 V, VNO, VNC = VCOM = 0.3 V/1.5 V
0.05
nA
Digital Control
Input High Voltage
VINH
Full
Input Low Voltage
VINL
Full
Input Capacitanced
Input Currentf
Full
Cin
IINL or IINH
0.4
VIN = 0 or V+
Full
5.5
−1
V
pF
1
mA
Dynamic Characteristics
Turn-On Timed
tON
Turn-Off Timed
tOFF
Break-Before-Make Timed
td
Charge Injectiond
QINJ
Off-Isolationd
OIRR
Crosstalkd
XTALK
NO, NC Off Capacitanced
CNO(off),
CNC(off)
Channel-On Capacitanced
CON
Document Number: 72708
S-32617—Rev. A, 29-Dec-03
VNO or VNC = 1
1.5
5V
V, RL = 50 W
W, CL = 35 pF
F
Figures 1 and 2
Room
Fulld
33
45
50
Room
Fulld
27
40
45
Room
CL = 1 nF, VGEN = 0 V, RGEN = 0 W, Figure 3
RL = 1 kW,
kW CL = 5 pF,
pF f = 1 MHz
VIN = 0 or V+, f = 1 MHz
ns
3
Room
20
Room
55
Room
91
Room
88
Room
105
pC
dB
pF
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DG2741/2742/2743
Vishay Siliconix
New Product
SPECIFICATIONS (V+ = 3.0 V)
Test Conditions
Otherwise Unless Specified
Parameter
Symbol
V+ = 3 V, "10%, VIN = 0.5 or 1.4 Ve
Limits
−40 to 85_C
Tempa
Minb
Full
0
Typc
Maxb
Unit
V+
V
Analog Switch
Analog Signal Ranged
On-Resistance
rON Flatness
rON MatchFlat
Switch Off Leakage Current
VNO, VNC,
VCOM
rON
rON
Flatness
V+ = 2.7 V, VCOM = 1.5, 2 V, INO, INC = 100 mA
Room
Full
0.4
0.8
0.9
Room
0.08
0.18
0.05
0.08
DrON
Room
INO(off),
INC(off)
Room
Full
−1
−10
1
10
Room
Full
−1
−10
1
10
Room
Full
−1
−10
1
10
1.4
ICOM(off)
Channel-On Leakage Current
V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO
INC = 100 mA
ICOM(on)
V+ = 3.3 V
VNO, VNC = 0.3 V/3 V, VCOM = 3 V/0.3 V
V+ = 3.3 V, VNO, VNC = VCOM = 0.3 V/3 V
W
nA
Digital Control
Input High Voltage
VINH
Full
Input Low Voltage
VINL
Full
Input Capacitanced
Input Currentf
Full
Cin
IINL or IINH
0.5
VIN = 0 or V+
Full
5.5
−1
V
pF
1
mA
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
Break-Before-Make Time
VNO or VNC = 1
1.5
5V
V, RL = 50 W
W, CL = 35 pF
F
V+ = 2.7 V, Figure 1 and 2
td
Charge Injectiond
QINJ
Off-Isolationd
OIRR
Crosstalkd
XTALK
NO, NC Off Capacitanced
CNO(off),
CNC(off)
Channel-On Capacitanced
CON
Room
Full
20
30
35
Room
Full
18
28
33
Room
CL = 1 nF, VGEN = 0 V, RGEN = 0 W, Figure 3
RL = 1 kW,
kW CL = 5 pF,
pF f = 1 MHz
V+ = 3.6 V, VIN = 0 or V+, f = 1 MHz
ns
1
Room
5.8
Room
−56
Room
−89
Room
81
Room
103
pC
dB
pF
Power Supply
Power Supply Range
V+
Power Supply Current
I+
1.5
V+ = 3.6 V, VIN = 0 or V+
0.01
3.6
V
1.0
mA
Notes:
a.
b.
c.
d.
e.
f.
Room = 25°C, Full = as determined by the operating suffix.
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
Typical values are for design aid only, not guaranteed nor subject to production testing.
Guarantee by design, nor subjected to production test.
VIN = input voltage to perform proper function.
Guaranteed by 3-V leakage testing, not production tested.
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Document Number: 72708
S-32617—Rev. A, 29-Dec-03
DG2741/2742/2743
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rDS(on) vs. VCOM vs. 1 VCC
rDS(on) vs. VD, VCC and Temperature
0.7
0.7
0.6
−40_C
0.5
V+ = 1.8 V, NO
rDS(on) (W)
rDS(on) (W)
25_C
0.6
0.5
0.4
0.3
V+ = 2.7 V, NO
V+ = 2.7 V, NC
0.4
V+ = 2.7 V
0.3
85_C
0.2
0.2
0.1
0.1
0.0
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75
0.0
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75
25_C
−40_C
VD (V)
VD (V)
Supply Current vs. Temperature
Switching Frequency vs. Supply Current
10,000
10,000
V+ = 3.6 V
1000
1000
Power Supply Current (mA)
ICC Supply Current (pA)
85_C
V+ = 1.8 V
V+ = 1.8 V, NC
VIN = 0 V
100
VIN = 3.6 V
10
100
10
1
0.1
1
−40
0.01
−20
0
20
40
60
80
100
0.01 K 0.1 K 1 K 10 K 100 K
Leakage Current vs. Temperature
10 M 100 M
1G
Leakage Current vs. Analog Voltage
2000
10000
V+ = 3.3 V
1500
V+ = 3.5 V
1000
Leakage Current (pA)
Leakage Current (pA)
1M
Inout Switching Frequency (Hz)
Temperature (_C)
ID(off)
100
IS(off)
1000
500
0
−500
−1000
10
IS(off)
−1500
ID(on)
ID(off)
ID(on)
1
−50
−25
0
25
50
Temperature (_C)
Document Number: 72708
S-32617—Rev. A, 29-Dec-03
75
100
−2000
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VD (V)
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DG2741/2742/2743
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Switching Time vs. VCC and Temperature
Insertion Loss, Off-Isolation, Crosstalk vs. Frequency
t ON,
10
45
LOSS
−10
40
Loss, OIRR, XTALK (dB)
t OFF − Switching Time (ns)
50
tON, V+ = 1.8 V
35
tOFF, V+ = 1.8 V
30
25
tON, V+ = 2.7 V
20
tOFF, V+ = 2.7 V
15
−30
−50
v+ = 3.6 v
v+ = 1.8 v
−70
OIRR
XTALK
−90
10
−110
5
0
−40
−20
0
20
40
60
80
−130
10 K
100
100 K
1M
10 M
100 M
1G
Frequency (Hz)
Temperature (_C)
Switching Threshold vs. Supply Voltage
Charge Injection vs. Analog Voltage
2.0
40
1.6
20
Q − Charge Injection (pC)
V T − Switching Threshold (V)
1.8
1.4
1.2
1.0
0.8
0.6
0.4
V+ = 3.6 V
0
V+ = 1.8 V
−20
−40
0.2
0.0
0
1
2
3
4
V+ − Supply Voltage (V)
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5
6
−60
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VCOM − Analog Voltage (v)
Document Number: 72708
S-32617—Rev. A, 29-Dec-03
DG2741/2742/2743
Vishay Siliconix
New Product
TEST CIRCUITS
V+
VINH
Logic
Input
V+
Switch
Input
VOUT
RL
50 W
GND
0.9 x VOUT
Switch
Output
IN
Logic
Input
CL
35 pF
0V
tOFF
tON
Logic “1” = Switch On
Logic input waveforms inverted for switches that have
the opposite logic sense.
CL (includes fixture and stray capacitance)
V OUT + V COM
ǒ
RL
R L ) R ON
tr t 5 ns
tf t 5 ns
VINL
Switch Output
COM
NO or NC
50%
Ǔ
FIGURE 1. Switching Time
V+
V+
Rgen
+
COM
NC or NO
VOUT
IN
Vgen
DVOUT
VOUT
IN
CL = 1 nF
On
Off
On
GND
Q = DVOUT x CL
VIN = 0 − V+
IN depends on switch configuration: input polarity
determined by sense of switch.
FIGURE 2. Charge Injection
V+
V+
10 nF
10 nF
V+
V+
NC or NO
COM
IN
0 V, 2.4 V
Meter
0 V, 2.4 V
COM
IN
NC or NO
RL
GND
GND
HP4192A
Impedance
Analyzer
or Equivalent
f = 1 MHz
V COM
Analyzer
Off Isolation + 20 log V
NOńNC
FIGURE 3. Off-Isolation
Document Number: 72708
S-32617—Rev. A, 29-Dec-03
FIGURE 4. Channel Off/On Capacitance
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