DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BYM36 series Fast soft-recovery controlled avalanche rectifiers Product specification Supersedes data of 1996 May 30 1996 Sep 18 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYM36 series FEATURES DESCRIPTION • Glass passivated Rugged glass SOD64 package, using a high temperature alloyed construction. • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability • Available in ammo-pack • Also available with preformed leads for easy insertion. , 2/3 page k(Datasheet) This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. a MAM104 Fig.1 Simplified outline (SOD64) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM PARAMETER CONDITIONS IF(AV) UNIT − 200 V BYM36B − 400 V BYM36C − 600 V BYM36D − 800 V BYM36E − 1000 V BYM36F − 1200 V BYM36G − 1400 V BYM36A − 200 V BYM36B − 400 V continuous reverse voltage BYM36C − 600 V BYM36D − 800 V BYM36E − 1000 V BYM36F − 1200 V BYM36G − 1400 V − 3.0 A average forward current BYM36A to C BYM36D and E Ttp = 55 °C; lead length = 10 mm; see Figs 2; 3 and 4 averaged over any 20 ms period; see also Figs 14; 15 and 16 BYM36F and G IF(AV) MAX. repetitive peak reverse voltage BYM36A VR MIN. average forward current BYM36A to C BYM36D and E Tamb = 65 °C; PCB mounting (see Fig.25); see Figs 5; 6 and 7 averaged over any 20 ms period; see also Figs 14; 15 and 16 BYM36F and G 1996 Sep 18 2 − 2.9 A − 2.9 A − 1.25 A − 1.20 A − 1.15 A Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers SYMBOL IFRM IFRM BYM36 series PARAMETER repetitive peak forward current CONDITIONS MIN. MAX. UNIT Ttp = 55 °C; see Figs 8; 9 and 10 BYM36A to C − 37 A BYM36D and E − 33 A BYM36F and G − 27 A BYM36A to C − 13 A BYM36D and E − 11 A BYM36F and G − 10 A repetitive peak forward current Tamb = 65 °C; see Figs 11; 12 and 13 IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax − 65 A ERSM non-repetitive peak reverse avalanche energy − 10 mJ Tstg storage temperature −65 +175 °C Tj junction temperature −65 +175 °C MIN. TYP. MAX. L = 120 mH; Tj = Tj max prior to surge; inductive load switched off see Figs 17 and 18 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage IF = 3 A; Tj = Tj max; see Figs 19; 20 and 21 − − 1.22 V − − 1.28 V BYM36F and G − − 1.24 V − − 1.60 V − − 1.78 V − − 1.57 V 300 − − V forward voltage BYM36A to C IF = 3 A; see Figs 19; 20 and 21 BYM36D and E BYM36F and G V(BR)R reverse avalanche breakdown voltage IR = 0.1 mA BYM36A IR BYM36B 500 − − V BYM36C 700 − − V BYM36D 900 − − V BYM36E 1100 − − V BYM36F 1300 − − V BYM36G 1500 − − V VR = VRRMmax; see Fig.22 − − 5 µA VR = VRRMmax; Tj = 165 °C; see Fig.22 − − 150 µA reverse current 1996 Sep 18 UNIT BYM36D and E BYM36A to C VF CONDITIONS 3 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers SYMBOL trr BYM36 series PARAMETER MIN. TYP. MAX. − − 100 ns − − 150 ns − − 250 ns − 85 − pF BYM36D and E − 75 − pF BYM36F and G − 65 − pF − − 7 A/µs − − 6 A/µs − − 5 A/µs reverse recovery time BYM36A to C BYM36D and E CONDITIONS when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig. 26 BYM36F and G Cd diode capacitance f = 1 MHz; VR = 0 V; see Figs 23 and 24 BYM36A to C dI R -------dt maximum slope of reverse recovery when switched from IF = 1 A to VR ≥ 30 V and current dIF/dt = −1 A/µs; BYM36A to C see Fig.27 BYM36D and E BYM36F and G UNIT THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm 25 K/W Rth j-a thermal resistance from junction to ambient note 1 75 K/W Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.25. For more information please refer to the “General Part of associated Handbook”. 1996 Sep 18 4 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYM36 series GRAPHICAL DATA MSA884 3 MSA885 3 handbook, halfpage handbook, halfpage I F(AV) I F(AV) (A) 20 15 (A) 10 lead length (mm) 20 2 2 1 1 15 10 lead length (mm) 0 0 0 100 T tp ( oC) 0 200 T tp ( oC) 200 BYM36D and E a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application. BYM36A to C a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application. Fig.2 100 Maximum average forward current as a function of tie-point temperature (including losses due to reverse leakage). Fig.3 MBD418 4.0 I F(AV) (A) 3.2 Maximum average forward current as a function of tie-point temperature (including losses due to reverse leakage). MLB492 2.0 I F(AV) (A) 1.6 handbook, halfpage lead length 10 mm 2.4 1.2 1.6 0.8 0.8 0.4 0 0 0 100 o Ttp ( C) 0 200 Maximum average forward current as a function of tie-point temperature (including losses due to reverse leakage). 1996 Sep 18 o T amb ( C) 200 BYM36A to C a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.25. Switched mode application. BYM36F and G a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application. Fig.4 100 Fig.5 5 Maximum average forward current as a function of ambient temperature (including losses due to reverse leakage). Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYM36 series MLB493 2.0 MBD417 2.0 I F(AV) (A) 1.6 I F(AV) (A) 1.6 1.2 1.2 0.8 0.8 0.4 0.4 0 0 0 100 200 o T amb ( C) 0 BYM36D and E a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.25. Switched mode application. Fig.6 100 o T amb ( C) 200 BYM36F and G a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.25. Switched mode application. Maximum average forward current as a function of ambient temperature (including losses due to reverse leakage). Fig.7 Maximum average forward current as a function of ambient temperature (including losses due to reverse leakage). MSA890 40 I FRM (A) δ = 0.05 30 0.1 20 0.2 10 0.5 1 0 10 2 10 1 1 10 10 2 10 3 t p (ms) 10 4 BYM36A to C Ttp = 55°C; Rth j-tp = 25 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 600 V. Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1996 Sep 18 6 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYM36 series MSA889 40 I FRM (A) δ = 0.05 30 20 0.1 0.2 10 0.5 1 0 10 2 10 1 1 10 10 2 10 3 t p (ms) 10 4 BYM36D and E Ttp = 55°C; Rth j-tp = 25 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V. Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MBD450 30 I FRM (A) 25 δ = 0.05 20 0.1 15 0.2 10 0.5 5 1 0 10 2 10 1 1 10 10 2 10 3 t p (ms) 10 4 BYM36F and G Ttp = 55°C; Rth j-tp = 25 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1400 V. Fig.10 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1996 Sep 18 7 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYM36 series MSA887 16 I FRM (A) 12 δ = 0.05 8 0.1 0.2 4 0.5 1 0 10 2 10 1 1 10 10 2 10 3 t p (ms) 10 4 BYM36A to C Tamb = 65 °C; Rth j-a = 75 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 600 V. Fig.11 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MSA888 12 I FRM (A) 10 δ = 0.05 8 0.1 6 0.2 4 0.5 2 1 0 10 2 10 1 1 10 10 2 10 3 t p (ms) 10 4 BYM36D and E Tamb = 65 °C; Rth j-a = 75 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V. Fig.12 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1996 Sep 18 8 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYM36 series MBD445 12 I FRM (A) 10 δ = 0.05 8 0.1 6 0.2 4 0.5 2 1 0 10 2 10 1 1 10 2 10 10 3 10 4 t p (ms) BYM36F and G Tamb = 65 °C; Rth j-a = 75 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1400 V. Fig.13 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MSA882 5 2.5 P (W) a=3 MSA883 5 handbook, halfpage 2 2.5 P (W) 1.57 4 2 1.57 a=3 1.42 4 1.42 3 3 2 2 1 1 0 0 0 1 2 I F(AV) (A) 3 0 1 BYM36A to C BYM36D and E a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. Fig.14 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. 1996 Sep 18 2 I F(AV) (A) 3 Fig.15 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. 9 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYM36 series MLB560 5 handbook, halfpage 2.5 P (W) 2 1.57 a=3 MSA873 200 handbook, halfpage Tj (°C) 1.42 4 3 100 2 A B C D E 1 0 0 1 2 I F(AV) (A) 0 3 0 BYM36F and G a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. 800 VR (V) 1200 BYM36A to E Solid line = VR. Dotted line = VRRM; δ = 0.5. Fig.16 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. Fig.17 Maximum permissible junction temperature as a function of reverse voltage. MSA880 MLB601 200 400 12 handbook, halfpage handbook, halfpage IF (A) Tj ( o C) 8 100 4 F 0 G 0 0 1000 VR (V) 0 2000 BYM36F and G BYM36A to C Solid line = VR. Dotted line = VRRM; δ = 0.5. Dotted line: Tj = 175 °C. Solid line: Tj = 25 °C. Fig.18 Maximum permissible junction temperature as a function of reverse voltage. 1996 Sep 18 1 2 VF (V) 3 Fig.19 Forward current as a function of forward voltage; maximum values. 10 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYM36 series MBD425 MSA881 12 12 handbook, halfpage handbook, halfpage IF (A) IF (A) 8 8 4 4 0 0 0 1 2 3 VF (V) 0 4 1 2 VF (V) 3 BYM36F and G. Dotted line: Tj = 175 °C. Solid line: Tj = 25 °C. BYM36D and E. Dotted line: Tj = 175 °C. Solid line: Tj = 25 °C. Fig.20 Forward current as a function of forward voltage; maximum values. Fig.21 Forward current as a function of forward voltage; maximum values. MGC550 103 handbook, halfpage MSA886 10 2 IR (µA) Cd (pF) 102 BYM36A,B,C 10 BYM36D,E 10 1 1 0 100 Tj (°C) 200 1 102 V R (V) 103 BYM36A to E f = 1 MHz; Tj = 25 °C. VR = VRRMmax. Fig.22 Reverse current as a function of junction temperature; maximum values. 1996 Sep 18 10 Fig.23 Diode capacitance as a function of reverse voltage, typical values. 11 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYM36 series MBD438 10 2 50 handbook, halfpage 25 Cd (pF) 7 50 10 2 3 1 1 10 2 10 10 3 V R (V) 10 4 MGA200 BYM36F and G f = 1 MHz; Tj = 25 °C. Dimensions in mm. Fig.24 Diode capacitance as a function of reverse voltage, typical values. DUT handbook, full pagewidth Fig.25 Device mounted on a printed-circuit board. IF (A) + 10 Ω 0.5 25 V t rr 1Ω 50 Ω 0 t 0.25 0.5 IR (A) 1 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤< 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.26 Test circuit and reverse recovery time waveform and definition. 1996 Sep 18 12 MAM057 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYM36 series IF halfpage andbook, dI F dt t rr 10% t dI R dt 100% IR MGC499 Fig.27 Reverse recovery definitions. 1996 Sep 18 13 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYM36 series , PACKAGE OUTLINE k handbook, full pagewidth 4.5 max 28 min 5.0 max Dimensions in mm. The marking band indicates the cathode. 28 min a 1.35 max MBC049 Fig.28 SOD64. DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Sep 18 14