CM200EXS-34SA Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Chopper IGBT NX-Series Module 200 Amperes/1700 Volts A D E K F G H J 6 S T J 5 4 U 3 M 7 L 2 P B AL (4 PLACES) N 8 AK (4 PLACES) 1 Q R DETAIL "A" Y V W X TH1 (6) Th N T C Tolerance Otherwise Specified (mm) Division of Dimension Tolerance 0.5 to 3 ±0.2 over 3 to 6 ±0.3 over 6 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1.2 The tolerance of size between terminals is assumed to ±0.4 DETAIL "B" AB TH2 (5) Es(4) G(3) AC AD AE AA AF AG Tr E(7) C C(2) K(8) Z AH AJ A(1) Di Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches Millimeters A 4.09 104.0 U 0.27 7.0 B 2.44 62.0 V 0.67 17.0 C 0.47 11.9 W 0.64 16.4 D 3.5 89.0 X 0.51 13.1 E 2.44 62.0 Y 0.17 4.4 F 0.53 13.5 Z 0.49 12.5 G 0.69 17.66 AA H 0.75 19.05 AB 0.17 Dia. 0.12 4.3 Dia. 3.0 J 0.14 3.8 AC 0.102 Dia. 2.6 Dia. K 0.16 4.2 AD 0.088 Dia. 2.25 Dia. L 1.97 50.0 AE 0.15 3.81 M 0.55 14.0 AF 0.045 1.15 N 0.87 22.0 AG 0.025 0.65 P 2.26 57.5 AH 0.05 1.2 Q 1.83 46.5 AJ R 2.9 73.71 AK 0.21 Dia. 5.5 Dia. S 0.8 20.5 AL M5 M5 T 0.67 17.0 07/12 Rev. 0 0.29 7.4 Description: Powerex IGBT Modules are designed for use in switching applications. Each module consists of one IGBT Transistor and one super-fast recovery diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Clamp Diode £ RoHS Compliant £ Isolated Copper Baseplate for Easy Heat Sinking Applications: £ DC/DC Converter £ DC Motor Control £ Brake Circuit Ordering Information: Example: Select the complete module number you desire from the table below -i.e. CM200EXS-34SA is a 1700V (VCES), 200 Ampere Chopper IGBT Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 200 34 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM200EXS-34SA Chopper IGBT NX-Series Module 200 Amperes/1700 Volts Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Characteristics Symbol Rating Units Collector-Emitter Voltage (VGE = 0V) VCES 1700 Volts Gate-Emitter Voltage (VCE = 0V) VGES ±20 Volts Collector Current (DC, TC = 125°C)*2 IC 200 Amperes Collector Current (Pulse, Repetitive)*3 ICRM 400 Amperes Ptot 2000 Watts VRRM 1700 Volts IF*1 200 Amperes Total Power Dissipation (TC = 25°C)*2,*4 Repetitive Peak Reverse Voltage (Clamp Diode Part, VGE = 0V) Forward Current (Clamp Diode Part, TC = 25°C)*2,*4 Forward Current (Clamp Diode Part, Pulse, Repetitive)*3 IFRM*1 400 Amperes Maximum Junction Temperature Tj(max) +175 °C Operating Junction Temperature Tj(op) -40 to +150 °C Storage Temperature Tstg -40 to +125 °C TC -40 to +125 °C VISO 4000 Volts Case Temperature 36.0 35.9 39.9 0 *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector clamp diode. *2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *3 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. *4 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating. 30.1 Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 minute) 51.4 Th 42.3 Tr 29.8 Tr 16.6 Di Di 0 LABEL SIDE Each mark points to the center position of each chip. Tr: IGBT Di: Clamp Diode Th: NTC Thermistor 2 07/12 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM200EXS-34SA Chopper IGBT NX-Series Module 200 Amperes/1700 Volts Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Emitter Cutoff Current ICES VCE = VCES, VGE = 0V — — 1 mA Gate-Emitter Leakage Current IGES ±VGE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 20mA, VCE = 10V 5.4 6 6.6 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 200A, VGE = 15V, Tj = 25°C*6 — 2.20 2.7 Volts (Terminal) IC = 200A, VGE = 15V, Tj = 125°C*6 — 2.40 — Volts IC = 200A, VGE = 15V, Tj = 150°C*6 — 2.45 — Volts 25°C*6 — 2.10 2.6 Volts IC = 200A, VGE = 15V, Tj = 125°C*6 — 2.30 — Volts 150°C*6 — 2.35 — Volts — — 35 nF — — 1.5 nF — — 0.35 nF — 1100 — nC — — 400 ns Collector-Emitter Saturation Voltage VCE(sat) (Chip) IC = 200A, VGE = 15V, Tj = IC = 200A, VGE = 15V, Tj = Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Gate Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time QG VCE = 10V, VGE = 0V VCC = 1000V, IC = 200A, VGE = 15V td(on) tr VCC = 1000V, IC = 200A, — — 100 ns td(off) VGE = ±15V, — — 700 ns tf RG = 1.3Ω, — — 600 ns Repetitive Peak Reverse Current IRRM Inductive Load — — 1 mA Forward Voltage Drop VF*1 IF = 200A, VGE = 0V, Tj = 25°C*6 — 4.10 5.3 Volts (Terminal) IF = 200A, VGE = 0V, Tj = 125°C*6 — 2.70 — Volts 150°C*6 — 2.60 — Volts VF*1 IF = 200A, VGE = 0V, Tj = 25°C*6 — 4.0 5.2 Volts (Chip) IF = 200A, VGE = 0V, Tj = 125°C*6 — 2.60 — Volts IF = 200A, VGE = 0V, Tj = 150°C*6 — 2.50 — Volts Clamp Di Part IF = 200A, VGE = 0V, Tj = Forward Voltage Drop Clamp Di Part VCC = 1000V, IF = 200A, VGE = ±15V — — 300 ns RG = 1.3Ω, Inductive Load, Clamp Di Part — 21.3 — µC Eon VCC = 1000V, IC = IF = 200A, — 46.0 — mJ Eoff VGE = ±15V, RG = 1.3Ω, Tj = 150°C, — 52.0 — mJ Inductive Load, Clamp Di Part — 42.0 — mJ Main Terminals-Chip, — — 2.0 mΩ — 2.5 — Ω *1 Reverse Recovery Time trr Reverse Recovery Charge Qrr*1 Turn-on Switching Energy per Pulse Turn-off Switching Energy per Pulse Reverse Recovery Energy per Pulse *1 Internal Lead Resistance Err RCC' + EE' Per Switch,TC = 25°C*2 Per Switch 0 36.0 35.9 39.9 rg *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector clamp diode. *2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *5 Pulse width and repetition rate should be such as to cause negligible temperature rise. 30.1 Internal Gate Resistance 51.4 Th 42.3 Tr 29.8 Tr 16.6 Di Di 0 LABEL SIDE Each mark points to the center position of each chip. Tr: IGBT Di: Clamp Diode Th: NTC Thermistor 07/12 Rev. 0 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM200EXS-34SA Chopper IGBT NX-Series Module 200 Amperes/1700 Volts Electrical Characteristics, Tj = 25°C unless otherwise specified (continued) NTC Thermistor Part Characteristics Symbol Zero Power Resistance R25 Deviation of Resistance ∆R/R B Constant Test Conditions TC = 25°C*2 TC = 100°C, R100 = 493Ω B(25/50) Typ. Max. Units 4.85 5.00 5.15 kΩ -7.3 — +7.8 % — 3375 — K P25 TC = 25°C*2 — — 10 mW Thermal Resistance, Junction to Case*2 Rth(j-c)Q Per IGBT — — 0.075 K/W Case*2 Rth(j-c)D Per Clamp Diode — — 0.12 K/W Rth(c-f) Thermal Grease Applied — 25 — K/kW 22 27 31 in-lb Power Dissipation Approximate by Equation*8 Min. Thermal Resistance Characteristics Thermal Resistance, Junction to Contact Thermal Resistance, Case to Heatsink*2 (Per 1 Module)*7 Mechanical Characteristics Mounting Torque Mt Main Terminals, M5 Screw Ms Mounting to Heatsink, M5 Screw 22 27 31 in-lb Creepage Distance ds Terminal to Terminal 20 — — mm Terminal to Baseplate 17 — — mm Clearance da Terminal to Terminal 12 — — mm Terminal to Baseplate 10 — — mm Weight m — 210 — Grams Flatness of Baseplate ec On Centerline X, Y*5 -100 — +100 µm VCC Applied Across C1-E2 — 1000 1200 Volts Gate-Emitter Drive Voltage VGE(on) Applied Across G1-Es1 / G2-Es2 13.5 15.0 16.5 Volts External Gate Resistance RG 1.3 — 35 Ω – : CONCAVE + : CONVEX R25 1 1 *8 B(25/50) = In( )/( – ) R50 T25 T50 R25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [°C] + 273.15 = 298.15 [K] R50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [°C] + 273.15 = 323.15 [K] MOUNTING SIDE MOUNTING SIDE 4 0 *2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *5 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below. *7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. 36.0 35.9 39.9 (DC) Supply Voltage 30.1 Recommended Operating Conditons, Ta = 25°C 51.4 Th 42.3 Tr 29.8 Tr 16.6 Di Di 0 LABEL SIDE Y X MOUNTING SIDE Each mark points to the center position of each chip. Tr: IGBT Di: Clamp Diode Th: NTC Thermistor – : CONCAVE + : CONVEX 07/12 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM200EXS-34SA Chopper IGBT NX-Series Module 200 Amperes/1700 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (CHIP - TYPICAL) OUTPUT CHARACTERISTICS (CHIP - TYPICAL) 4.5 Tj = 25°C 15 11 300 200 10 100 9 8 0 0 2 4 6 8 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10 VGE = 15V Tj = 25°C Tj = 125°C Tj = 150°C 4.0 0 100 200 300 400 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (CHIP - TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (CHIP - TYPICAL) 103 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) VGE = 20V Tj = 25°C EMITTER CURRENT, IE, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 400 8 IC = 400A 6 IC = 200A 4 IC = 120A 2 0 6 8 10 12 14 16 18 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 07/12 Rev. 0 20 VGE = 15V Tj = 25°C Tj = 125°C Tj = 150°C 102 101 0 1 2 3 4 5 6 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 5 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM200EXS-34SA Chopper IGBT NX-Series Module 200 Amperes/1700 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 104 102 SWITCHING TIME, (ns) CAPACITANCE, Cies, Coes, Cres, (nF) 103 Cies 101 Coes 100 100 101 tr VCC = 1000V VGE = ±15V RG = 1.3Ω Tj = 125°C Inductive Load 101 102 103 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) SWITCHING TIME VS. GATE RESISTANCE (TYPICAL) 104 103 tf td(off) td(on) 102 tr VCC = 1000V VGE = ±15V RG = 1.3Ω Tj = 150°C Inductive Load 101 10-1 101 102 COLLECTOR CURRENT, IC, (AMPERES) 103 SWITCHING TIME, (ns) SWITCHING TIME, (ns) td(on) 102 10-1 101 102 104 6 tf Cres VGE = 0V Tj = 25°C 10-1 10-1 td(off) 103 td(off) td(on) 103 tf 102 101 100 VCC = 1000V VGE = ±15V IC = 200A Tj = 125°C Inductive Load tr 101 102 EXTERNAL GATE RESISTANCE, RG, (Ω) 07/12 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM200EXS-34SA Chopper IGBT NX-Series Module 200 Amperes/1700 Volts SWITCHING TIME VS. GATE RESISTANCE (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 td(off) td(on) 103 tf tr 102 101 100 VCC = 1000V VGE = ±15V IC = 200A Tj = 150°C Inductive Load 101 102 REVERSE RECOVERY, Irr (A), trr (ns) 104 102 101 101 103 EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) GATE CHARGE VS. VGE 20 102 101 101 VCC = 1000V VGE = ±15V RG = 1.3Ω Tj = 150°C Inductive Load Irr trr 102 EMITTER CURRENT, IE, (AMPERES) 103 GATE-EMITTER VOLTAGE, VGE, (VOLTS) REVERSE RECOVERY, Irr (A), trr (ns) 102 EXTERNAL GATE RESISTANCE, RG, (Ω) 103 07/12 Rev. 0 VCC = 1000V VGE = ±15V RG = 1.3Ω Tj = 125°C Inductive Load Irr trr IC = 200A VCC = 1000V Tj = 25°C 15 10 5 0 0 400 800 1200 1600 1800 GATE CHARGE, QG, (nC) 7 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM200EXS-34SA Chopper IGBT NX-Series Module 200 Amperes/1700 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 102 10 101 Eon Eoff Err 100 101 1 VCC = 1000V VGE = ±15V RG = 1.3Ω Tj = 125°C 103 102 COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 VCC = 1000V VGE = ±15V IC = 200A Tj = 125°C 100 100 Eon Eoff Err 101 GATE RESISTANCE, RG, (Ω) 102 SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECIVERY ENERGY, Err, (mJ) SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECIVERY ENERGY, Err, (mJ) 0 103 102 COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) 102 8 1 VCC = 1000V VGE = ±15V RG = 1.3Ω Tj = 150°C Eon Eoff Err 100 101 103 101 10 101 0 103 102 100 REVERSE RECIVERY ENERGY, Err, (mJ) 100 SWITCHING ENERGY, Eon, Eoff, (mJ) 103 REVERSE RECIVERY ENERGY, Err, (mJ) SWITCHING ENERGY, Eon, Eoff, (mJ) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 102 101 VCC = 1000V VGE = ±15V IC = 200A Tj = 150°C 100 100 Eon Eoff Err 101 102 GATE RESISTANCE, RG, (Ω) 07/12 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) CM200EXS-34SA Chopper IGBT NX-Series Module 200 Amperes/1700 Volts 100 10-3 10-1 10-2 10-3 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) 10-2 10-1 100 101 10-1 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.075°K/W (IGBT) Rth(j-c) = 0.12°K/W (FWDi) 10-2 10-5 10-4 10-3 10-3 TIME, (s) 07/12 Rev. 0 9