APTGF100DU120T Dual common source NPT IGBT Power Module VCES = 1200V IC = 100A @ Tc = 80°C Application · AC Switches · Switched Mode Power Supplies · Uninterruptible Power Supplies C1 C2 Q1 Q2 G1 G2 E1 E2 E NTC1 NTC2 G2 C2 E2 C1 C2 E E1 E2 NTC2 G1 G2 NTC1 Features · Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated · Kelvin emitter for easy drive · Very low stray inductance - Symmetrical design - Lead frames for power connections · Internal thermistor for temperature monitoring · High level of integration Benefits · Outstanding performance at high frequency operation · Stable temperature behavior · Very rugged · Direct mounting to heatsink (isolated package) · Low junction to case thermal resistance · Solderable terminals both for power and signal for easy PCB mounting · Easy paralleling due to positive TC of VCEsat · Low profile Absolute maximum ratings IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Tc = 25°C Tc = 80°C Tc = 25°C Tc = 25°C Tj = 150°C Max ratings 1200 150 100 300 ±20 568 300A @ 1200V Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-6 APTGF100DU120T – Rev 1 March, 2004 Symbol VCES APTGF100DU120T All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current VCE(on) Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, IC = 750 µA Tj = 25°C VGE = 0V VCE = 1200V Tj = 125°C T j = 25°C VGE =15V IC = 100A Tj = 125°C VGE = VCE, IC = 2 mA VGE = 20 V, VCE = 0V Min 1200 Test Conditions VGE = 0V VCE = 25V f = 1MHz Min Typ 3.2 4.0 4.5 Max 750 3750 3.7 Unit V µA V 6.5 150 V nA Typ 6900 660 440 660 70 400 35 65 320 30 10.8 4.6 35 65 360 40 13.9 6.1 Max Unit Max Tj = 125°C Typ 120 2.0 2.3 1.8 Tj = 25°C 370 Tj = 125°C 500 Tj = 25°C 2.64 Tj = 125°C 13.8 Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Eon Eoff Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Turn-off Switching Energy v Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Turn-off Switching Energy v VGS = 15V VBus = 600V IC = 100A Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 100A RG = 2.5 W Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 100A RG = 2.5 W pF nC ns mJ ns mJ Reverse diode ratings and characteristics VF Reverse Recovery Time Qrr Reverse Recovery Charge 50% duty cycle IF = 120A IF = 240A IF = 120A Diode Forward Voltage trr Test Conditions IF = 120A VR = 800V di/dt =800A/µs IF = 120A VR = 800V di/dt =800A/µs Min Tc = 70°C Unit A 2.5 V ns µC u Eon includes diode reverse recovery v In accordance with JEDEC standard JESD24-1 APT website – http://www.advancedpower.com 2-6 APTGF100DU120T – Rev 1 March, 2004 Symbol Characteristic Maximum Average Forward Current IF(AV) APTGF100DU120T Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Typ IGBT Diode Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque To heatsink Package Weight Max 0.22 0.32 2500 Unit °C/W V -40 -40 -40 150 125 100 4.7 160 M5 °C N.m g Temperature sensor NTC Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.16 K RT = Min Typ 68 4080 Max Unit kW K R25 T: Thermistor temperature é æ 1 1 öù RT: Thermistor value at T expê B25 / 85 çç - ÷÷ú è T25 T øû ë APT website – http://www.advancedpower.com 3-6 APTGF100DU120T – Rev 1 March, 2004 Package outline APTGF100DU120T Typical Performance Curve Output characteristics (VGE=15V) 250µs Pulse Test < 0.5% Duty cycle 240 TJ=125°C 160 80 80 40 TJ=125°C 20 0 2 4 6 VCE, Collector to Emitter Voltage (V) 0 8 1 2 3 VCE, Collector to Emitter Voltage (V) Gate Charge VGE, Gate to Emitter Voltage (V) Transfer Characteristics 600 250µs Pulse Test < 0.5% Duty cycle 500 400 300 200 TJ=125°C 100 TJ=25°C 0 0 4 8 12 VGE, Gate to Emitter Voltage (V) TJ = 25°C 250µs Pulse Test < 0.5% Duty cycle 7 6 5 Ic=100A 3 2 Ic=50A 1 0 9 14 VCE=600V 12 10 VCE=960V 8 6 4 2 0 100 200 300 400 500 600 700 Gate Charge (nC) Ic=200A 4 VCE=240V IC = 100A T J = 25°C 16 0 VCE, Collector to Emitter Voltage (V) 8 18 16 On state Voltage vs Gate to Emitter Volt. 9 4 10 11 12 13 14 15 VGE, Gate to Emitter Voltage (V) 16 On state Voltage vs Junction Temperature 6 250µs Pulse Test < 0.5% Duty cycle VGE = 15V 5 Ic=100A 4 3 Ic=50A 2 1 0 -50 Breakdown Voltage vs Junction Temp. 180 1.15 160 Ic, DC Collector Current (A) 1.20 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 Ic=200A -25 0 25 50 75 100 TJ, Junction Temperature (°C) 125 DC Collector Current vs Case Temperature 140 120 100 80 60 40 20 0 -50 -25 0 25 50 75 100 TJ, Junction Temperature (°C) 125 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) APT website – http://www.advancedpower.com 4-6 APTGF100DU120T – Rev 1 March, 2004 0 Ic, Collector Current (A) TJ=25°C 60 0 VCE, Collector to Emitter Voltage (V) 250µs Pulse Test < 0.5% Duty cycle TJ=25°C 320 Collector to Emitter Breakdown Voltage (Normalized) Output Characteristics (VGE=10V) 100 Ic, Collector Current (A) Ic, Collector Current (A) 400 APTGF100DU120T Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns) td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current 45 VCE = 600V RG = 2.5Ω 40 VGE = 15V 35 30 25 0 50 100 150 200 400 VGE=15V, TJ=125°C 350 300 250 VCE = 600V RG = 2.5Ω 200 250 0 50 100 150 200 ICE, Collector to Emitter Current (A) ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current 250 Current Fall Time vs Collector Current 180 50 VCE = 600V RG = 2.5Ω 140 tf, Fall Time (ns) tr, Rise Time (ns) VGE=15V, T J=25°C 100 VGE=15V 60 TJ = 125°C 40 30 TJ = 25°C VCE = 600V, VGE = 15V, RG = 2.5Ω 20 20 250 VCE = 600V RG = 2.5Ω 48 TJ=125°C, VGE=15V 40 32 24 TJ=25°C, VGE=15V 16 8 0 50 100 150 200 ICE, Collector to Emitter Current (A) 28 24 20 Eoff, 100A 16 12 Eon, 50A 8 4 12 8 Eoff, 50A 0 TJ = 125°C TJ = 25°C 4 0 16 Eon, 100A VCE = 600V VGE = 15V RG = 2.5Ω 0 Switching Energy Losses (mJ) VCE = 600V V GE = 15V TJ= 125°C 32 250 16 250 Switching Energy Losses vs Gate Resistance 36 50 100 150 200 ICE, Collector to Emitter Current (A) Turn-Off Energy Loss vs Collector Current Turn-On Energy Loss vs Collector Current 56 0 Switching Energy Losses (mJ) 0 50 100 150 200 250 ICE, Collector to Emitter Current (A) Switching Energy Losses vs Junction Temp. VCE = 600V VGE = 15V RG = 2.5Ω 12 Eon, 100A 8 Eoff, 100A 4 Eon, 50A Eoff, 50A 0 0 5 10 15 20 Gate Resistance (Ohms) 25 0 25 50 75 100 TJ, Junction Temperature (°C) APT website – http://www.advancedpower.com 125 5-6 APTGF100DU120T – Rev 1 March, 2004 50 100 150 200 ICE, Collector to Emitter Current (A) Eoff, Turn-off Energy Loss (mJ) Eon, Turn-On Energy Loss (mJ) 0 APTGF100DU120T Capacitance vs Collector to Emitter Voltage 10000 Minimum Switching Safe Operating Area 350 1000 IC, Collector Current (A) C, Capacitance (pF) Cies Coes Cres 100 0 10 20 30 40 VCE, Collector to Emitter Voltage (V) 250 200 150 100 50 0 50 0 400 800 1200 VCE, Collector to Emitter Voltage (V) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.25 Thermal Impedance (°C/W) 300 0.9 0.2 0.35 0.15 0.25 0.1 0.15 0.05 0.05 Single Pulse 0.025 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) VCE = 600V D = 50% RG = 2.5Ω TJ = 125°C 60 50 40 30 20 10 0 10 30 50 70 90 IC, Collector Current (A) 110 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6-6 APTGF100DU120T – Rev 1 March, 2004 Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 70