Features • • • • • • • • • Single Voltage for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) Fast Read Access Time - 120 ns Internal Program Control and Timer 16K bytes Boot Block With Lockout Fast Chip Erase Cycle Time - 10 seconds Byte-by-Byte Programming - 30 µs/Byte Typical Hardware Data Protection DATA Polling For End Of Program Detection Low Power Dissipation – 25 mA Active Current – 50 µA CMOS Standby Current • Typical 10,000 Write Cycles • Small Packaging – 8 x 8 mm CBGA – 8 x 14 mm V-TSOP Description The AT49BV/LV040 are 3-volt-only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over the commercial temperature range. When the device is deselected, the CMOS standby current is less than 50 µA. The device contains a user-enabled “boot block” protection feature. Two versions of the feature are available: the AT49BV/LV040 locates the boot block at lowest order addresses (“bottom boot”); the AT49BV/LV040T locates it at highest order addresses (“top boot”). (continued) Pin Configurations Pin Name Function A0 - A18 Addresses CE Chip Enable CBGA Top View 1 2 3 4 5 6 4-Megabit (512K x 8) Single 2.7-volt Battery-Voltage™ Flash Memory AT49BV040 AT49BV040T AT49LV040 AT49LV040T AT49BV/LV040 7 A GND I/O6 VCC VCC I/O2 OE GND B A17 I/O7 I/O4 NC NC I/O0 CE C A10 NC I/O5 NC I/O3 I/O1 A0 OE Output Enable WE Write Enable E I/O0 - I/O7 Data Inputs/Outputs F D A14 A13 A9 NC NC A6 A3 A4 A1 NC A18 A5 A2 A16 A11 WE NC A15 A12 A8 A7 PLCC Top View V - TSOP Top View (8 x 14 mm) or T - TSOP Top View (8 x 20 mm) 0679AX-A–9/97 1 To allow for simple in-system reprogrammability, the AT49BV/LV040 does not require high input voltages for programming. Three-volt-only commands determine the read and programming operation of the device. Reading data out of the device is similar to reading from an EPROM. Reprogramming the AT49BV/LV040 is performed by erasing the entire 4 megabits of memory and then programming on a byte-by-byte basis. The typical byte programming time is a fast 30 µs. The end of a program cycle can be optionally detected by the DATA polling feature. Once the end of a byte program cycle has been detected, a new access for a read or program can begin. The typical number of program and erase cycles is in excess of 10,000 cycles. The optional 16K bytes boot block section includes a reprogramming write lock out feature to provide data integrity. The boot sector is designed to contain user secure code, and when the feature is enabled, the boot sector is permanently protected from being reprogrammed. Block Diagram AT49BV/LV040 DATA INPUTS/OUTPUTS I/O7 - I/O0 VCC GND OE WE CE ADDRESS INPUTS AT49BV/LV040T DATA INPUTS/OUTPUTS I/O7 - I/O0 8 OE, CE, AND WE LOGIC 8 DATA LATCH DATA LATCH INPUT/OUTPUT BUFFERS INPUT/OUTPUT BUFFERS Y DECODER Y-GATING X DECODER MAIN MEMORY (496K BYTES) Y-GATING 7FFFFH 7FFFFH OPTIONAL BOOT BLOCK (16K BYTES) 03FFFH 7C000H MAIN MEMORY (496K BYTES) OPTIONAL BOOT BLOCK (16K BYTES) 00000H 00000H Device Operation READ: The AT49BV/LV040 is accessed like an EPROM. When CE and OE are low and WE is high, the data stored at the memory location determined by the address pins is asserted on the outputs. The outputs are put in the high impedance state whenever CE or OE is high. This dualline control gives designers flexibility in preventing bus contention. ERASURE: Before a byte can be reprogrammed, the 512K bytes memory array (or 496K bytes if the boot block featured is used) must be erased. The erased state of the memory bits is a logical “1”. The entire device can be erased at one time by using a 6-byte software code. The software chip erase code consists of 6-byte load commands to specific address locations with a specific data pattern (please refer to the Chip Erase Cycle Waveforms). After the software chip erase has been initiated, the device will internally time the erase operation so that no external clocks are required. The maximum time needed to erase the whole chip is tEC. If the boot block lockout feature has been enabled, the data in the boot sector will not be erased. BYTE PROGRAMMING: Once the memory array is erased, the device is programmed (to a logical “0”) on a byte-bybyte basis. Please note that a data “0” cannot be programmed back to a “1”; only erase operations can convert 2 AT49BV/LV040 “0”s to “1”s. Programming is accomplished via the internal device command register and is a 4 bus cycle operation (please refer to the Command Definitions table). The device will automatically generate the required internal program pulses. The program cycle has addresses latched on the falling edge of WE or CE, whichever occurs last, and the data latched on the rising edge of WE or CE, whichever occurs first. Programming is completed after the specified t BP cycle time. The DATA polling feature may also be used to indicate the end of a program cycle. BOOT BLOCK PROGRAMMING LOCKOUT: The device has one designated block that has a programming lockout feature. This feature prevents programming of data in the designated block once the feature has been enabled. The size of the block is 16K bytes. This block, referred to as the boot block, can contain secure code that is used to bring up the system. Enabling the lockout feature will allow the boot code to stay in the device while data in the rest of the device is updated. This feature does not have to be activated; the boot block's usage as a write protected region is optional to the user. The address range of the AT49BV/LV040 boot block is 00000H to 03FFFH while the address range of the AT49BV/LV040T boot block is 7C000H to 7FFFFH. AT49BV/LV040 Once the feature is enabled, the data in the boot block can no longer be erased or programmed. Data in the main memory block can still be changed through the regular programming method. To activate the lockout feature, a series of six program commands to specific addresses with specific data must be performed. Please refer to the Command Definitions table. BOOT BLOCK LOCKOUT DETECTION: A software method is available to determine if programming of the boot block section is locked out. When the device is in the software product identification mode (see Software Product Identification Entry and Exit sections) a read from address location 00002H will show if programming the boot block is locked out. If the data on I/O0 is low, the boot block can be programmed; if the data on I/O0 is high, the program lockout feature has been activated and the block cannot be programmed. The software product identification code should be used to return to standard operation. PRODUCT IDENTIFICATION: The product identification mode identifies the device and manufacturer as Atmel. It may be accessed by hardware or software operation. The hardware operation mode can be used by an external programmer to identify the correct programming algorithm for the Atmel product. For details, see Operating Modes (for hardware operation) or Software Product Identification. The manufacturer and device code is the same for both modes. DATA POLLING: The AT49BV/LV040 features DATA polling to indicate the end of a program cycle. During a program cycle an attempted read of the last byte loaded will result in the complement of the loaded data on I/O7. Once the program cycle has been completed, true data is valid on all outputs and the next cycle may begin. DATA polling may begin at any time during the program cycle. TO G G L E B I T: I n a d d i t i o n t o D A T A p o l l i n g t h e AT49BV/LV040 provides another method for determining the end of a program or erase cycle. During a program or erase operation, successive attempts to read data from the device will result in I/O6 toggling between one and zero. Once the program cycle has completed, I/O6 will stop toggling and valid data will be read. Examining the toggle bit may begin at any time during a program cycle. HARDWARE DATA PROTECTION: Hardware features protect against inadvertent programs to the AT49BV/LV040 in the following ways: (a) VCC sense: if VCC is below 1.8V (typical), the program function is inhibited. (b) Program inhibit: holding any one of OE low, CE high or WE high inhibits program cycles. (c) Noise filter: pulses of less than 15 ns (typical) on the WE or CE inputs will not initiate a program cycle. INPUT LEVELS: While operating with a 2.7V to 3.6V power supply, the address inputs and control inputs (OE, CE and WE) may be driven from 0 to 5.5V without adversely affecting the operation of the device. The I/O lines can only be driven from 0 to VCC + 0.6V. 3 Command Definition (in Hex) Command Sequence 1st Bus Cycle Bus Cycles Addr Data Read 1 Addr DOUT Chip Erase 6 5555 4 2nd Bus Cycle 3rd Bus Cycle 4th Bus Cycle 5th Bus Cycle 6th Bus Cycle Addr Data Addr Data Addr Data Addr Data Addr Data AA 2AAA 55 5555 80 5555 AA 2AAA 55 5555 10 5555 AA 2AAA 55 5555 A0 Addr DIN 6 5555 AA 2AAA 55 5555 80 5555 AA 2AAA 55 5555 40 Product ID Entry 3 5555 AA 2AAA 55 5555 90 Product ID Exit(2) 3 5555 AA 2AAA 55 5555 F0 Product ID Exit(2) 1 XXXX F0 Byte Program Boot Block Lockout Notes: (1) 1. The 16K byte boot sector has the address range 00000H to 03FFFH for the AT49BV/LV040 and 7C000H to 7FFFFH for the AT49BV/LV040T. 2. Either one of the Product ID exit commands can be used. Absolute Maximum Ratings* Temperature Under Bias ................................ -55°C to +125°C Storage Temperature ..................................... -65°C to +150°C All Input Voltages (including NC Pins) with Respect to Ground ...................................-0.6V to +6.25V All Output Voltages with Respect to Ground ............................ -0.6V to VCC + 0.6V Voltage on OE with Respect to Ground ..................................-0.6V to + 13.5V 4 AT49BV/LV040 *NOTICE: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. AT49BV/LV040 DC and AC Operating Range Operating Temperature (Case) AT49BV/LV040-12 AT49BV/LV040-15 AT49BV/LV040-20 0°C - 70°C 0°C - 70°C 0°C - 70°C -40°C - 85°C -40°C - 85°C -40°C - 85°C 2.7V to 3.6V/3.0V to 3.6V 2.7V to 3.6V/3.0V to 3.6V 2.7V to 3.6V/3.0V to 3.6V Com. Ind. VCC Power Supply Operating Modes CE OE WE Ai I/O VIL VIL VIH Ai DOUT Program VIL VIH VIL Ai DIN Standby/Write Inhibit VIH X(1) X X High Z Program Inhibit X X VIH Program Inhibit X VIL X Output Disable X VIH X Mode Read (2) High Z Product Identification Hardware VIL VIL VIH Software(5) Notes: A1 - A18 = VIL, A9 = VH,(3) A0 = VIL Manufacturer Code(4) A1 - A18 = VIL, A9 = VH,(3) A0 = VIH Device Code(4) A0 = VIL, A1 - A18 = VIL Manufacturer Code(4) A0 = VIH, A1 - A18 = VIL Device Code (4) 1. X can be VIL or VIH. 2. Refer to AC Programming Waveforms. 3. VH = 12.0V ± 0.5V. 4. Manufacturer Code: 1FH Device Code: 13H (AT49BV/LV040), 12H (AT49BV/LV040T). 5. See details under Software Product Identification Entry/Exit. DC Characteristics Symbol Parameter Condition ILI Input Load Current ILO Max Units VIN = 0V to VCC 10 µA Output Leakage Current VI/O = 0V to VCC 10 µA ISB1 VCC Standby Current CMOS CE = VCC - 0.3V to VCC 50 µA ISB2 VCC Standby Current TTL CE = 2.0V to VCC 1 mA ICC(1) VCC Active Current f = 5 MHz; IOUT = 0 mA, VCC = 3.6V 25 mA VIL Input Low Voltage 0.8 V VIH Input High Voltage VOL Output Low Voltage IOL = 2.1 mA VOH Output High Voltage IOH = -100 µA; VCC = 3.0V Note: 1. Min Typ 12 2.0 V 0.45 2.4 V V In the erase mode, ICC is 50 mA. 5 AC Read Characteristics AT49BV/LV040-12 Symbol Parameter tACC Address to Output Delay 120 tCE(1) CE to Output Delay 120 tOE(2) OE to Output Delay 0 50 0 70 CE or OE to Output Float 0 30 0 40 Output Hold from OE, CE or Address, whichever comes first 0 tDF (3)(4) tOH Min AT49BV/LV040-15 Max Min Max AT49BV/LV040-20 Max Units 150 200 ns 150 200 ns 0 80 ns 0 50 ns 0 Min 0 AC Read Waveforms(1)(2)(3)(4) Notes: 1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC . 2. OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE or by tACC - tOE after an address change without impact on tACC . 3. tDF is specified from OE or CE whichever occurs first (CL = 5 pF). 4. This parameter is characterized and is not 100% tested. Input Test Waveforms and Measurement level Output test Load tR, tF < 5 ns Pin Capacitance (f = 1 MHz, T = 25°C) (1) Typ Max Units Conditions CIN 4 6 pF VIN = 0V COUT 8 12 pF VOUT = 0V Note: 6 1. This parameter is characterized and is not 100% tested. AT49BV/LV040 ns AT49BV/LV040 AC Byte Load Characteristics Symbol Parameter tAS, tOES Address, OE Set-up Time tAH Address Hold Time tCS Min Max Units 0 ns 100 ns Chip Select Set-up Time 0 ns tCH Chip Select Hold Time 0 ns tWP Write Pulse Width (WE or CE) 200 ns tDS Data Set-up Time 100 ns tDH, tOEH Data, OE Hold Time 0 ns tWPH Write Pulse Width High 200 ns AC Byte Load Waveforms WE Controlled CE Controlled 7 Program Cycle Characteristics Symbol Parameter tBP Byte Programming Time tAS Address Set-up Time tAH Typ Max Units 30 50 µs 0 ns Address Hold Time 100 ns tDS Data Set-up Time 100 ns tDH Data Hold Time 0 ns tWP Write Pulse Width 200 ns tWPH Write Pulse Width High 200 ns tEC Erase Cycle Time Program Cycle Waveforms Chip Erase Cycle Waveforms Note: 8 Min OE must be high only when WE and CE are both low. AT49BV/LV040 10 seconds AT49BV/LV040 Data Polling Characteristics(1) Symbol Parameter tDH Data Hold Time 0 ns tOEH OE Hold Time 10 ns tOE OE to Output Delay (2) tWR Write Recovery Time Notes: Min 1. These parameters are characterized and not 100% tested. 2. See tOE spec in AC Read Characteristics. Typ Max Units ns 0 ns Data Polling Waveforms Toggle Bit Characteristics(1) Symbol Parameter tDH Data Hold Time tOEH OE Hold Time Min OE to Output Delay tOEHP OE High Pulse tWR Write Recovery Time Max Units 0 ns 10 ns (2) tOE Typ ns 150 ns 0 ns Notes: 1. These parameters are characterized and not 100% tested. 2. See tOE spec in AC Read Characteristics. Toggle Bit Waveforms(1)(2)(3) Notes: 1. Toggling either OE or CE or both OE and CE will operate toggle bit. The tOEHP specification must be met by the toggling input(s). 2. Beginning and ending state of I/O6 will vary. 3. Any address location may be used but the address should not vary. 9 Software Product Identification Entry(1) Boot Block Lockout Feature Enable Algorithm(1) LOAD DATA AA TO ADDRESS 5555 LOAD DATA AA TO ADDRESS 5555 LOAD DATA 55 TO ADDRESS 2AAA LOAD DATA 55 TO ADDRESS 2AAA LOAD DATA 80 TO ADDRESS 5555 LOAD DATA 90 TO ADDRESS 5555 LOAD DATA AA TO ADDRESS 5555 LOAD DATA AA TO ADDRESS 5555 LOAD DATA 55 TO ADDRESS 2AAA ENTER PRODUCT IDENTIFICATION (2)(3)(4) MODE LOAD DATA 40 TO ADDRESS 5555 Software Product Identification Exit(1) LOAD DATA AA TO ADDRESS 5555 LOAD DATA 55 TO ADDRESS 2AAA OR PAUSE 1 second LOAD DATA AA TO ADDRESS 5555 EXIT PRODUCT IDENTIFICATION MODE (4) LOAD DATA F0 TO ADDRESS 5555 LOAD DATA AA TO ADDRESS 5555 EXIT PRODUCT IDENTIFICATION MODE (4) Notes for software product identification: 1. Data Format: I/O7 - I/O0 (Hex); Address Format: A14 - A0 (Hex). 2. A1 - A18 = VIL. Manufacture Code is read for A0 = VIL; Device Code is read for A0 = VIH. 3. The device does not remain in identification mode if powered down. 4. The device returns to standard operation mode. 5. Manufacturer Code: 1FH Device Code: 13H (AT49BV/LV040), 12H (AT49BV/LV040T). 10 AT49BV/LV040 (2) Notes for boot block lockout feature enable: 1. Data Format: I/O7 - I/O0 (Hex); Address Format: A14 - A0 (Hex). 2. Boot block lockout feature enabled. AT49BV/LV040 Ordering Information ICC (mA) tACC (ns) Active Standby 150 25 200 150 200 Ordering Code Package Operation Range 0.05 AT49BV040-15CC AT49BV040-15JC AT49BV040-15TC AT49BV040-15VC 42C1 32J 32T 32V Commercial (0°C to 70°C) 25 0.05 AT49BV040-15CI AT49BV040-15JI AT49BV040-15TI AT49BV040-15VI 42C1 32J 32T 32V Industrial (-40°C to 85°C) 25 0.05 AT49BV040-20CC AT49BV040-20JC AT49BV040-20TC AT49BV040-20VC 42C1 32J 32T 32V Commercial (0°C to 70°C) 25 0.05 AT49BV040-20CI AT49BV040-20JI AT49BV040-20TI AT49BV040-20VI 42C1 32J 32T 32V Industrial (-40°C to 85°C) 25 0.05 AT49BV040T-15CC AT49BV040T-15JC AT49BV040T-15TC AT49BV040T-15VC 42C1 32J 32T 32V Commercial (0°C to 70°C) 25 0.05 AT49BV040T-15CI AT49BV040T-15JI AT49BV040T-15TI AT49BV040T-15VI 42C1 32J 32T 32V Industrial (-40°C to 85°C) 25 0.05 AT49BV040T-20CC AT49BV040T-20JC AT49BV040T-20TC AT49BV040T-20VC 42C1 32J 32T 32V Commercial (0°C to 70°C) 25 0.05 AT49BV040T-20CI AT49BV040T-20JI AT49BV040T-20TI AT49BV040T-20VI 42C1 32J 32T 32V Industrial (-40°C to 85°C) Package Type 32J 32-Lead, Plastic J-Leaded Chip Carrier Package (PLCC) 32T 32-Lead, Plastic Thin Small Outline Package (TSOP) 8 x 20 mm 32V 32-Lead, Plastic Thin Small Outline Package (TSOP) 8 x 14 mm 42C1 42-Ball, Plastic Chip-Scale Ball Grid Array (CBGA) 8 x 8 mm 11 Ordering Information ICC (mA) tACC (ns) Active Standby 150 25 200 150 200 Ordering Code Package 0.05 AT49LV040-15CC AT49LV040-15JC AT49LV040-15TC AT49LV040-15VC 42C1 32J 32T 32V Commercial (0°C to 70°C) 25 0.05 AT49LV040-15CI AT49LV040-15JI AT49LV040-15TI AT49LV040-15VI 42C1 32J 32T 32V Industrial (-40°C to 85°C) 25 0.05 AT49LV040-20CC AT49LV040-20JC AT49LV040-20TC AT49LV040-20VC 42C1 32J 32T 32V Commercial (0°C to 70°C) 25 0.05 AT49LV040-20CI AT49LV040-20JI AT49LV040-20TI AT49LV040-20VI 42C1 32J 32T 32V Industrial (-40°C to 85°C) 25 0.05 AT49LV040T-15CC AT49LV040T-15JC AT49LV040T-15TC AT49LV040T-15VC 42C1 32J 32T 32V Commercial (0°C to 70°C) 25 0.05 AT49LV040T-15CI AT49LV040T-15JI AT49LV040T-15TI AT49LV040T-15VI 42C1 32J 32T 32V Industrial (-40°C to 85°C) 25 0.05 AT49LV040T-20CC AT49LV040T-20JC AT49LV040T-20TC AT49LV040T-20VC 42C1 32J 32T 32V Commercial (0°C to 70°C) 25 0.05 AT49LV040T-20CI AT49LV040T-20JI AT49LV040T-20TI AT49LV040T-20VI 42C1 32J 32T 32V Industrial (-40°C to 85°C) Package Type 32J 32-Lead, Plastic J-Leaded Chip Carrier Package (PLCC) 32T 32-Lead, Plastic Thin Small Outline Package (TSOP) 8 x 20 mm 32V 32-Lead, Plastic Thin Small Outline Package (TSOP) 8 x 14 mm 42C1 42-Ball, Plastic Chip-Scale Ball Grid Array (CBGA) 8 x 8 mm 12 AT49BV/LV040 Operation Range