JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate MOSFETS CJA9451 P-Channel 20-V(D-S) MOSFET V(BR)DSS ID RDS(on)MAX 135mΩ@-4.5V -20 V SOT-89-3L -2.3A 240mΩ@-2.5V 1. GATE 2. DRAIN 3. SOURCE Description The Advanced Power MOSFETs provide the desigher with the best combination of fast switching, ruggedized device desigh, ultra low on- resistance and cost-effectiveness. MARKING Equivalent Circuit Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -20 Continuous Gate-Source Voltage VGS ±12 Continuous Drain Current ID -2.3 A Power Dissipation PD 0.5 W RθJA 250 ℃/W Tj 150 Tstg -55 ~+150 Thermal Resistance from Junction to Ambient Operating Temperature Storage Temperature www.cj-elec.com 1 V ℃ E,Aug,2015 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit̀ Off characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =10µA Gate-body leakage IGSS VDS =0V, VGS =±12V ±100 nA Zero gate voltage drain current IDSS VDS =-20V, VGS =0V -1.0 µA -20 V On characteristics Gate-threshold voltage VGS(th) Static drain-source on-resistance (note 1) RDS(on) Forward transconductance (note 1) gfs -0.7 -1.50 VGS =-4.5V, ID =-2.3A 0.058 0.135 VGS =-2.5V, ID =-1.0A 0.075 0.240 VDS =VGS, ID =-0.25mA VDS =-5V, ID =-2.3A -0.50 2.3 V Ω S Dynamic characteristics (note 2) Input capacitance Ciss 430 Output capacitance Coss Reverse transfer capacitance Crss 35 td(on) 9 VDS =-20V,VGS =0V, f=1MHz pF 100 Switching characteristics Turn-on delay time (note 1,2) Rise time (note 2) Turn-off delay time (note 2) Fall time (note 2) tr td(off) VGS=-5V, VDS=-10V, ID =-1A,RG=3.3Ω, RD=10Ω tf 25 ns 20 10 Drain-source body diode characteristics Body diode forward voltage (note 1) VSD IS=-1A, VGS = 0V -1.6 V No tes: 1. Pulse Test ; Pulse Width ≤300µs, Duty Cycle ≤2%. 2. These parameters have no way to verify. www.cj-elec.com 2 E,Aug,2015 Typical Characteristics Output Characteristics -10 Transfer Characteristics -10 VGS= -4.5V,-3.5V,-2.5V Ta=25℃ Ta=25℃ Pulsed Pulsed -8 -8 (A) VGS=-1.5V ID -4 -6 DRAIN CURRENT ID -6 DRAIN CURRENT (A) VGS=-2.0V -4 -2 -0 -2 VGS=-1.0V -0 -1 -2 -3 DRAIN TO SOURCE VOLTAGE RDS(ON) 150 —— VDS -0 -0.0 -4 (V) -0.5 -1.0 -1.5 GATE TO SOURCE VOLTAGE ID RDS(ON) 250 Ta=25℃ —— -2.0 VGS -2.5 (V) VGS Ta=25℃ Pulsed Pulsed 200 (mΩ) 90 VGS=-4.5V 60 30 -0 -2 -4 -6 DRAIN CURRENT -10 -3 RDS(ON) VGS=-2.5V ON-RESISTANCE ON-RESISTANCE RDS(ON) (mΩ) 120 IS —— ID -8 150 100 50 0 -10 (A) ID=-2.8A -0 -2 -4 GATE TO SOURCE VOLTAGE -6 VGS -8 (V) VSD Ta=25℃ Pulsed SOURCE CURRENT IS (A) -1 -0.3 -0.1 -0.03 -0.01 -3E-3 -1E-3 -0.2 -0.4 -0.6 -0.8 SOURCE TO DRAIN VOLTAGE www.cj-elec.com -1.0 VSD -1.2 (V) 3 E,Aug,2015 SOT-89-3L Package Outline Dimensions Dimensions In Millimeters Max Min 1.400 1.600 0.320 0.520 0.400 0.580 0.350 0.440 4.400 4.600 1.550 REF. 2.300 2.600 3.940 4.250 1.500 TYP. 3.000 TYP. 0.900 1.200 Symbol A b b1 c D D1 E E1 e e1 L Dimensions In Inches Min Max 0.055 0.063 0.013 0.020 0.016 0.023 0.014 0.017 0.173 0.181 0.061 REF. 0.091 0.102 0.155 0.167 0.060 TYP. 0.118 TYP. 0.035 0.047 SOT-89-3L Suggested Pad Layout www.cj-elec.com 4 E,Aug,2015 SOT-89-3L Tape and Reel www.cj-elec.com 5 E,Aug,2015