A Product Line of Diodes Incorporated DMC2700UDM 20V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • • • • • NEW PRODUCT ID max Device V(BR)DSS RDS(on) max TA = 25°C (Notes 4) Q1 0.4Ω @ VGS = 4.5V 1.34 A 0.5Ω @ VGS = 2.5V 1.65 A 0.7Ω @ VGS = -4.5V -1.14 A 0.9Ω @ VGS = -2.5V -0.94 A 20V Q2 -20V Mechanical Data • • • • • Low On-Resistance Low Gate Threshold Voltage VGS(th) < 1V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair MOSFET Ultra-Small Surface Mount Package ESD Protected Gate to 2.5kV HBM Lead Free/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Case: SOT26 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.015 grams (approximate) This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Portable electronics D1 SOT26 S1 D2 G1 S2 G2 D2 G1 G2 S1 ESD PROTECTED TO 2.5kV HBM D1 S2 Top view Pin-Out Device symbol Top View Ordering Information (Note 3) Product DMC2700UDM-7 Notes: Marking C27 Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3,000 1. No purposefully added lead. 2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com 3. For packaging details, go to our website at http://www.diodes.com Marking Information Date Code Key Year Code Month Code 2009 W Jan 1 YM C27 2010 X Feb 2 DMC2700UDM Datasheet Number: DS35360 Rev. 1 - 2 Mar 3 C27 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September) 2011 Y Apr 4 May 5 2012 Z Jun 6 1 of 9 www.diodes.com 2013 A Jul 7 Aug 8 2014 B Sep 9 Oct O 2015 C Nov N Dec D June 2011 © Diodes Incorporated A Product Line of Diodes Incorporated DMC2700UDM Maximum Ratings N-CHANNEL – Q1 @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS NEW PRODUCT Drain Source Voltage Gate-Source Voltage Unit V V Unit V V ID Value -20 ±6 -1.14 -1.07 Symbol PD RθJA TJ, TSTG Value 1.12 111 -55 to +150 Unit W °C/W °C TA = 25°C TA = 85°C Drain Current (Note 4) Maximum Ratings P-CHANNEL – Q2 Characteristic Symbol VDSS VGSS TA = 25°C TA = 85°C Drain Current (Note 4) Thermal Characteristics ID A @TA = 25°C unless otherwise specified Drain Source Voltage Gate-Source Voltage A @TA = 25°C unless otherwise specified Characteristic Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient (Note 4) Operating and Storage Temperature Range Notes: Value 20 ±6 1.34 0.97 4. For a device mounted on 25mm X 25mm FR-4 PCB board with a high coverage of single sided 1oz copper, in still air conditions with two active die DMC2700UDM Datasheet Number: DS35360 Rev. 1 - 2 2 of 9 www.diodes.com June 2011 © Diodes Incorporated A Product Line of Diodes Incorporated DMC2700UDM NEW PRODUCT Electrical Characteristics N-CHANNEL – Q1 @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS 20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 100 ± 1.0 V nA μA VGS = 0V, ID = 250μA VDS = 20V, VGS = 0V VGS = ±4.5V, VDS = 0V VGS(th) 0.5 VDS = VGS, ID = 250μA VGS = 4.5V, ID = 600mA VGS = 2.5V, ID = 500mA VGS = 1.8V, ID = 350mA VDS =10V, ID = 400mA VGS = 0V, IS = 150mA ⎯ 0.3 0.4 0.5 1.0 V 0.4 0.5 0.7 Ω |Yfs| VSD ⎯ ⎯ ⎯ ⎯ ⎯ 1.4 0.7 ⎯ 1.2 S V Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 60.67 9.68 5.37 736.6 93.6 116.6 5.1 7.4 26.7 12.3 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ pF pF pF VDS = 16V, VGS = 0V f = 1.0MHz pC VGS = 4.5V, VDS = 10V, ID = 250mA ns VDD = 10V, VGS = 4.5V, RL = 47Ω, RG = 10Ω, ID = 200mA RDS (ON) Electrical Characteristics P-CHANNEL – Q2 @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS -20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -100 ± 1.0 V nA μA VGS = 0V, ID = -250μA VDS = -20V, VGS = 0V VGS = ±4.5V, VDS = 0V VGS(th) -0.5 ⎯ 0.5 0.7 1.0 -1.0 V 0.7 0.9 1.3 Ω VDS = VGS, ID = -250μA VGS = -4.5V, ID = -430mA VGS = -2.5V, ID = -300mA VGS = -1.8V, ID = -150mA VDS =10V, ID = -250mA VGS = 0V, IS = -150mA RDS (ON) ⎯ |Yfs| VSD ⎯ ⎯ -0.9 -0.8 ⎯ -1.2 S V Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 59.76 12.07 6.36 622.4 100.3 132.2 5.1 8.1 28.4 20.7 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ pF pF pF VDS = -16V, VGS = 0V f = 1.0MHz pC VGS = -4.5V, VDS = -10V, ID = -250mA ns VDD = -10V, VGS = -4.5V, RL = 47Ω, RG = 10Ω, ID = -200mA 5. Short duration pulse test used to minimize self-heating effect. DMC2700UDM Datasheet Number: DS35360 Rev. 1 - 2 3 of 9 www.diodes.com June 2011 © Diodes Incorporated A Product Line of Diodes Incorporated DMC2700UDM 1.0 0.8 0.8 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT(A) 1.0 0.6 0.4 0.6 0.4 T A = 150°C 0.2 0.2 TA = 125°C TA = 85°C TA = 25°C 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig.1 Typical Output Characteristics 5 0.8 0.7 0.6 0.5 0.4 VGS = 1.8V 0.3 VGS = 2.5V VGS = 4.5V 0.2 0.1 0 0 0.2 0.4 0.6 0.8 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) TA = -55°C 0 0 0 0.5 1 1.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 2 0.5 TA = 150°C 0.4 T A = 125°C TA = 85°C 0.3 T A = 25°C 0.2 TA = -55°C 0.1 0 0 1.0 1.7 0.2 0.4 0.6 0.8 ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 1.0 0.8 1.5 RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT N-CHANNEL – Q1 1.3 1.1 0.9 VGS = 4.5V ID = 500mA 0.6 VGS = 2.5V ID = 250mA 0.4 VGS = 4.5V ID = 500mA 0.2 VGS = 2.5V ID = 250mA 0.7 0.5 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMC2700UDM Datasheet Number: DS35360 Rev. 1 - 2 4 of 9 www.diodes.com 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature June 2011 © Diodes Incorporated A Product Line of Diodes Incorporated DMC2700UDM N-CHANNEL – Q1 (continued) IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.0 1.2 0.8 ID = 1mA ID = 250µA 0.4 0.8 TA = 25°C 0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 1,000 100 TA = 150°C 10 IDSS, LEAKAGE CURRENT (nA) Ciss C, CAPACITANCE (pF) NEW PRODUCT 1.6 Coss C rss 100 TA = 125°C T A = 85°C 10 TA = 25°C 1 1 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance DMC2700UDM Datasheet Number: DS35360 Rev. 1 - 2 0 20 4 8 12 16 VDS, DRAIN-SOURCE VOLTAGE (V) 20 Fig. 10 Typical Leakage Current vs. Drain-Source Voltage 5 of 9 www.diodes.com June 2011 © Diodes Incorporated A Product Line of Diodes Incorporated DMC2700UDM P-CHANNEL – Q2 1.0 1.0 VDS = -5V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT(A) 0.6 0.4 0.2 0.8 0.6 0.4 TA = 150°C 0.2 TA = 125°C TA = 85°C TA = 25°C 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig.11 Typical Output Characteristics 1.6 1.4 1.2 VGS = -1.8V 1.0 0.8 VGS = -2.5V 0.6 0.4 VGS = -4.5V 0.2 0 0 0.2 0.4 0.6 0.8 -ID, DRAIN-SOURCE CURRENT (A) Fig. 13 Typical On-Resistance vs. Drain Current and Gate Voltage 1.0 RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) 1.7 1.5 1.3 1.1 0.9 VGS = -4.5V ID = -500mA VGS = -2.5V ID = -250mA 0.7 0.5 -50 0 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT 0.8 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 15 On-Resistance Variation with Temperature DMC2700UDM Datasheet Number: DS35360 Rev. 1 - 2 6 of 9 www.diodes.com TA = -55°C 0 0.5 1.0 1.5 2.0 2.5 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 12 Typical Transfer Characteristic 3.0 1.0 VGS = -4.5V 0.8 TA = 150°C TA = 125°C 0.6 T A = 85°C TA = 25°C 0.4 TA = -55°C 0.2 0 0 0.2 0.4 0.6 0.8 -ID, DRAIN CURRENT (A) Fig. 14 Typical On-Resistance vs. Drain Current and Temperature 1.0 1.0 0.8 VGS = -2.5V ID = -250mA 0.6 VGS = -4.5V ID = -500mA 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 16 On-Resistance Variation with Temperature June 2011 © Diodes Incorporated A Product Line of Diodes Incorporated DMC2700UDM P-CHANNEL – Q2 (continued) 1.0 -IS, SOURCE CURRENT (A) -VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.2 ID = -1mA 0.8 ID = -250µA 0.4 0.8 TA = 25°C 0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 17 Gate Threshold Variation vs. Ambient Temperature 0 0.2 100 0.4 0.6 0.8 1.0 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 18 Diode Forward Voltage vs. Current 1,000 T A = 150°C -IDSS, LEAKAGE CURRENT (nA) Ciss C, CAPACITANCE (pF) NEW PRODUCT 1.6 Coss 10 Crss TA = 125°C 100 10 TA = 85°C T A = 25°C 1 1 0 5 10 15 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 19 Typical Total Capacitance DMC2700UDM Datasheet Number: DS35360 Rev. 1 - 2 20 7 of 9 www.diodes.com 0 4 8 12 16 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 20 Typical Leakage Current vs. Drain-Source Voltage 20 June 2011 © Diodes Incorporated A Product Line of Diodes Incorporated DMC2700UDM NEW PRODUCT Package Outline Dimensions A B C H K M J L D SOT26 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D ⎯ ⎯ 0.95 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 0° 8° α ⎯ All Dimensions in mm Suggested Pad Layout C2 Z C2 Dimensions Value (in mm) Z 3.20 G 1.60 X 0.55 Y 0.80 C1 2.40 C2 0.95 C1 G Y X DMC2700UDM Datasheet Number: DS35360 Rev. 1 - 2 8 of 9 www.diodes.com June 2011 © Diodes Incorporated A Product Line of Diodes Incorporated DMC2700UDM NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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