Kersemi BTA20-600B Rms on-state current (full sine wave) Datasheet

BTA20 Series
20A TRIACS
Table 1: Main Features
Symbol
Value
Unit
IT(RMS)
20
A
VDRM/VRRM
600 and 700
V
IGT (Q1) (max)
35 and 50
mA
Table 2: Order Codes
Part Numbers
BTA20-600BWRG
BTA20-600CWRG
BTA20-700BWRG
BTA20-700CWRG
DESCRIPTION
The BTA20 BW/CW triac family are high performance glass passivated chips technology.
The snubberless concept offer suppression of RC
network and it is suitable for application such as
phase control and static switching on inductive or
resistive load.
Marking
BTA20-600BW
BTA20-600CW
BTA20-700BW
BTA20-700CW
TO-220AB Insulated
A2
Thanks to their clip assembly technique, they
provide a superior performance in surge current
handling capabilities.
By using an internal ceramic pad, the BTA series
provides voltage insulated tab (rated at
2500VRMS) complying with UL standards (File ref.:
E81734).
G
A1
Table 3: Absolute Maximum Ratings
Symbol
IT(RMS)
ITSM
I ²t
dI/dt
Parameter
RMS on-state current (full sine wave)
F = 50 Hz
F = 60 Hz
tp = 10 ms
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I²t Value for fusing
20
A
t = 10 ms
t = 8.3 ms
210
200
A
200
A²s
Tj = 25°C
Tj = 125°C
Peak gate current
tp = 20 µs
VGM
Peak positive gate voltage
tp = 20 µs
2014-6-10
Tc = 70°C
tp = 10 ms
IGM
Tstg
Tj
Unit
Repetitive
F = 50 Hz
Tj = 125°C
Non repetitive
Critical rate of rise of on-state current
IG = 500 mA dIG/dt = 1 A/µs
VDSM/VRSM Non repetitive peak off-state voltage
PG(AV)
Value
Tj = 125°C
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
1
20
100
VDSM/VRSM
+ 100
A/µs
V
4
A
16
V
1
W
- 40 to + 150
- 40 to + 125
°C
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BTA20 Series
Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified)
Symbol
IGT (1)
Test Conditions
VD = 12 V
ALL
RL = 33 Ω
VGT
VGD
VD = VDRM RL = 3.3 kΩ Tj = 125°C
IH (2)
IT = 500 mA gate open
CW
MIN.
2
1
MAX.
50
35
V
ALL
MIN.
0.2
V
IG = 1.2 IGT
II
Tj = 125°C
Tj = 125°C
(dV/dt)c (2) (dI/dt)c = 20 A/ms
mA
1.5
MAX.
VD = 67 %VDRM gate open
Unit
MAX.
I - II - III
dV/dt (2)
BW
ALL
I - III
IL
BTA20
Quadrant
75
50
50
-
90
-
MAX.
-
80
TYP.
750
500
MIN.
500
250
TYP.
36
22
MIN.
18
11
TYP.
mA
mA
V/µs
V/µs
Table 5: Static Characteristics
Symbol
VTM (2)
IDRM
IRRM
Test Conditions
ITM = 28 A
tp = 380 µs
VDRM = VRRM
Tj = 25°C
Tj = 25°C
Tj = 125°C
MAX.
MAX.
Value
Unit
1.70
V
10
µA
3
mA
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1.
Table 6: Thermal resistance
Symbol
Parameter
Value
Rth(j-c)
Junction to case (AC)
2.1
Rth(j-c)
Junction to case (DC)
2.8
Rth(j-a)
Junction to ambient
60
2014-6-10
Unit
°C/W
2
°C/W
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BTA20 Series
Figure 1: Maximum power dissipation versus
RMS on-state current (full cycle)
Figure 2: Correlation between maximum RMS
power dissipation and maximum allowable
temperatures (Tamb and Tcase) for different
thermal resistances heatsink + contact
P(W)
P(W)
Tcase(°C)
30
30
65
Rth = 0°C/W
25
25
20
75
Rth = 0.5°C/W
α = 180°
20
85
α = 120°
15
15
α = 90°
α = 60°
10
10
Rth = 1°C/W
105
180°
α = 30°
5
95
Rth = 1.5°C/W
α
α
5
115
Tamb(°C)
IT(RMS)(A)
125
0
0
0
5
10
15
20
0
Figure 3: RMS on-state current versus case
temperature (full cycle)
20
40
60
80
100
120
Figure 4: Relative variation of thermal
impedance versus pulse duration
K=[Zth/Rth]
IT(RMS)(A)
1
25
α = 180°
Zth(j-c)
20
15
Zth(j-a)
10
0.1
5
TC(°C)
tp(s)
0
0
10
20
30
40
50
60
70
Figure
5:
On-state
(maximum values)
80
90
100
0.01
1.E-3
110 120 130
characteristics
1.E-2
1.E-1
1.E+0
1.E+1
1.E+2
5.E+2
Figure 6: Non repetitive surge peak on-state
current versus number of cycles
ITM(A)
ITSM(A)
1000
1000
Tj max.
Vt0 = 1.04V
Rd = 20 mΩ
t=20ms
One cycle
100
Tj = Tj max.
10
Non repetitive
Tj initial=25°C
Tj = 25°C.
Number of cycles
VTM(V)
1
1
2014-6-10
2
3
100
4
1
5
3
10
100
1000
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BTA20 Series
Figure 7: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width tp < 10 ms
and corresponding value of I2t
Figure 8: Relative variation of gate trigger
current and holding current versus junction
temperature
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
ITSM(A), I2t (A2s)
2.5
1000
Tj initial=25°C
2.0
IGT
1.5
ITSM
1.0
IH & IL
I2t
0.5
tp(ms)
Tj(°C)
100
0.01
0.10
1.00
0.0
-40 -30 -20 -10
10.00
0
10 20 30 40
50 60 70
80 90 100 110 120 130
Figure 9: Ordering Information Scheme
BT A 20 - 600 BW RG
Triac series
Insulation
A = insulated
Current
20 = 20A
Voltage
600 = 600V
700 = 700V
Sensitivity and type
BW = 50mA (max.)
CW = 35mA (max)
Packing mode
RG = Tube
Table 7: Product Selector
Part Numbers
Voltage (xxx)
Sensitivity
600 V
700 V
BTA20-xxxBWRG
X
X
50 mA
BTA20-xxxCWRG
X
X
35 mA
2014-6-10
4
Type
Package
Snubberless
TO-220AB Ins.
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