BAS70 HiRel Silicon Schottky Diode HiRel Discrete and Microwave Semiconductor General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Hermetically sealed microwave package Space Qualified ESA/SCC Detail Spec. No.: 5512/020 Type Variant No. 01 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAS70-T1 (ql) (ql) Quality Level: Marking - Ordering Code see below Pin Configuration 1 2 Package T1 P: Professional Quality H: High Rel Quality S: Space Quality ES: ESA Space Quality (see order instructions for ordering example) IFAG IMM RPD D HIR 1 of 3 V2, Februar 2011 BAS70 Maximum Ratings Parameter Symbol Reverse Voltage VR 70 V Forward Current IF 70 mA Surge Forward Current 1) IFSM 85 mA Ptot 250 mW Operating Temperature Range Top -55 to +150 °C Storage Temperature Range Tstg -55 to +150 °C Tsol +250 °C Junction Temperature Tj 150 °C Thermal Resistance Junction-Case Rth(j-c) 100 K/W Power Dissipation 2) Soldering Temperature 3) Values Unit Electrical Characteristics at TA=25°C; unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Reverse Current 1, VR=70V IR1 - - 2 µA Reverse Current 2, VR=56V IR2 - - 0,1 µA Forward Voltage 1, IF1=1mA VF1 0,30 0,38 0,44 V Forward Voltage 2, IF2=10mA VF2 0,60 0,70 0,78 V VF3 0,80 0,85 1,00 V RFD 24 30 32 CT 1,2 1,5 2 pF Forward Voltage 3, IF3=15mA Differential Forward Resistance 4) IF2=10mA, IF3=15mA AC Characteristics Total Capacitance VR=0V; f=1MHz Notes.: 1.) t 10ms, Duty Cycle=10% 2.) At TCASE = 125 °C. For TCASE > 125 °C derating is required. 3.) During 5 sec. maximum. The same terminal shall not be resoldered until 3 minutes have elapsed. VF 4.) RFD=---------------5x10-3 A IFAG IMM RPD D HIR 2 of 3 V2, Februar 2011 BAS70 T1 Package Symbol X1 B Y1 A B C D E F G H A Y2 C 2 1 D F G E G H Millimetre min max 1,30 1,45 1,15 1,35 0,40 0,10 0,50 0,30 0,06 0,10 5,50 0,40 0,60 Edition 2011-02 Published by Infineon Technologies AG 85579 Neubiberg, Germany © Infineon Technologies AG 2011 All Rights Reserved. Attention please! The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie“). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of an third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. IFAG IMM RPD D HIR 3 of 3 V2, Februar 2011