Rohm DTA123JKA -100ma / -50v digital transistors (with built-in resistors) Datasheet

-100mA / -50V Digital transistors
(with built-in resistors)
DTA123JM / DTA123JE / DTA123JUA / DTA123JKA
 Applications
Inverter, Interface, Driver
 Features
1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors
(see equivalent circuit).
2)The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
3)Only the on/off conditions need to be set for operation, making the device design easy.
 Structure
PNP epitaxial planar silicon transistor (Resistor built-in type)
 Dimensions (Unit : mm)
DTA123JM
DTA123JE
0.7
1.6
0.55
0.2
0.3
0.8
0.8
1.2
(1)(2)
(2)
0.2
0.4 0.4
0.13
(1) IN
(2) GND
(3) OUT
0.8
ROHM : VMT3
2.0
ROHM : EMT3
DTA123JKA
2.9
0.7
0.8
1.6
2.8
2.1
1.25
(3)
0.1Min.
(1)
0.65 0.65
ROHM : UMT3
EIAJ : SC-70
0.15
1.3
(2)
(1) GND
(2) IN
(3) OUT
(1)
0.95 0.95
(1) GND
(2) IN
(3) OUT
Each lead has same dimensions
0.15
ROHM : SMT3
EIAJ : SC-59
1.9
Each lead has same dimensions
Abbreviated symbol : 132
Abbreviated symbol : E32
 Packaging specifications
Part No.
(1) GND
(2) IN
(3) OUT
1.1
0.4
(3)
(2)
0.15
1.0
Abbreviated symbol : E32
0.9
0.2
0.3
0.2
0.5 0.5
Abbreviated symbol : E32
DTA123JUA
(1)
0.2
0.5
0.3Min.
0.22
1.6
(3)
(3)
0.1Min.
1.2
0.32
 Inner circuit
Package
VMT3
EMT3
UMT3
SMT3
Packaging type
Taping
Taping
Taping
Taping
Code
T2L
TL
T106
T146
Basic ordering
unit (pieces)
8000
3000
3000
3000
−
−
−
−
−
DTA123JM
DTA123JE
−
DTA123JUA
−
−
DTA123JKA
−
−
OUT
R1
IN
R2
GND(+)
OUT
IN
−
−
GND(+)
R1=2.2kΩ, R2=47kΩ
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c 2009 ROHM Co., Ltd. All rights reserved.
○
1/2
2009.06 - Rev.B
DTA123JM / DTA123JE / DTA123JUA / DTA123JKA
Data Sheet
 Absolute maximum ratings (Ta=25C)
Parameter
Limits
Symbol
Unit
DTA123JM DTA123JE DTA123JUA DTA123JKA
Supply voltage
VCC
−50
V
Input voltage
VIN
−12 to +5
V
IO
−100
IC(Max.)
−100
Output current
mA
Power dissipation
PD
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
150
200
mW
 Electrical characteristics (Ta=25C)
Parameter
Input voltage
Output voltage
Input current
Symbol
Min.
Typ.
Max.
VI(off)
−
−
−0.5
VI(on)
−1.1
−
−
VO(on)
−
−0.1
−0.3
V
II
−
−
−3.6
mA
VI=−5V
VCC=−50V, VI=0V
Unit
V
VO=−0.3V, IO=−5mA
IO/II=−5mA/−0.25mA
IO(off)
−
−
−0.5
μA
DC current gain
GI
80
−
−
−
Input resistance
R1
1.54
2.2
2.86
kΩ
Resistance ratio
R2/R1
17
21
26
−
fT ∗
−
250
−
MHz
Output current
Transition frequency
Conditions
VCC=−5V, IO=−100μA
VO=−5V, IO=−10mA
−
−
VCE=−10V, IE=5mA, f=100MHz
∗ Characteristics of built-in transistor
 Electrical characteristic curves
OUTPUT CURRENT : Io (A)
INPUT VOLTAGE : VI(on) (V)
−20
−10
−5
−2
Ta=−40°C
25°C
100°C
−1
−500m
−200m
−100m
−100μ −200μ −500μ −1m −2m
−5m −10m −20m −50m −100m
OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. output current
(ON characteristics)
−1
1k
VCC=−5V
−2m
−1m
−500μ
Ta=100°C
25°C
−40°C
−200μ
−100μ
−50μ
−20μ
−10μ
−5μ
−2μ
−1μ
0
VO=−5V
500
200
Ta=100°C
25°C
−40°C
100
50
20
10
5
2
−0.5
−1.0
−1.5
−2.0
−2.5
−3.0
INPUT VOLTAGE : VI(off) (V)
Fig.2 Output current vs. input voltage
(OFF characteristics)
1
−100μ −200μ −500μ −1m −2m
−5m −10m −20m −50m −100m
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. output
current
lO/lI=20
−500m
OUTPUT VOLTAGE : VO(on) (V)
−10m
−5m
VO=−0.3V
−50
DC CURRENT GAIN : GI
−100
Ta=100°C
25°C
−40°C
−200m
−100m
−50m
−20m
−10m
−5m
−2m
−1m
−100μ −200μ −500μ −1m −2m
−5m −10m −20m −50m −100m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output current
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c 2009 ROHM Co., Ltd. All rights reserved.
○
2/2
2009.06 - Rev.B
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