AD ADP1190ACBZ-R7 Integrated 500 ma load switch with quad signal switch Datasheet

Integrated 500 mA Load Switch
with Quad Signal Switch
ADP1190
Data Sheet
FEATURES
FUNCTIONAL BLOCK DIAGRAM
Low input voltage range: 1.4 V to 3.6 V
Power switch: low RDSON of 60 mΩ at 3.6 V, with active
discharge
4 normally open SPST signal switches: RDSON of 2 Ω at 1.8 V
with active pull-down on one side
500 mA continuous operating current
Built-in level shift for control logic that can be operated
by 1.2 V logic
Ultralow shutdown current: <0.7 μA
Ultrasmall 1.2 mm × 1.6 mm × 0.5 mm, 12-ball, 0.4 mm
pitch WLCSP
P
S1
T1
N
P
S2
T2
N
P
S3
T3
N
APPLICATIONS
P
Mobile phones
SIM card disconnect switches
Digital cameras and audio devices
Portable and battery-powered equipment
S4
T4
N
OFF
5ms
DEBOUNCE
EN
GND
ON
4MΩ
LOAD SWITCH
11259-001
OUT
IN
Figure 1.
GENERAL DESCRIPTION
The ADP1190 is an integrated high-side load switch with four
signal switches, designed for operation from 1.4 V to 3.6 V.
This load switch provides power domain isolation for extended
power battery life. The load switch is a low on-resistance
P-channel MOSFET that supports up to 500 mA of continuous
load current and minimizes power loss. Integrated with the load
switch are four normally open 2 Ω SPST signal switches.
Rev. 0
Aside from its excellent operating performance, the ADP1190
occupies minimal printed circuit board (PCB) space with an
area less than 1.92 mm2 and a height of 0.50 mm. The ADP1190
is available in an ultrasmall 1.2 mm × 1.6 mm, 12-ball, 0.4 mm
pitch WLCSP.
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license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
©2013 Analog Devices, Inc. All rights reserved.
Technical Support
www.analog.com
ADP1190
Data Sheet
TABLE OF CONTENTS
Features .............................................................................................. 1
Thermal Resistance .......................................................................4
Applications ....................................................................................... 1
ESD Caution...................................................................................4
Functional Block Diagram .............................................................. 1
Pin Configuration and Function Descriptions..............................5
General Description ......................................................................... 1
Typical Performance Characteristics ..............................................6
Revision History ............................................................................... 2
Theory of Operation .........................................................................9
Specifications..................................................................................... 3
Application Block Diagram ........................................................... 10
Timing Diagram ........................................................................... 3
Outline Dimensions ....................................................................... 11
Absolute Maximum Ratings............................................................ 4
Ordering Guide .......................................................................... 11
Thermal Data ................................................................................ 4
REVISION HISTORY
4/13—Revision 0: Initial Version
Rev. 0 | Page 2 of 12
Data Sheet
ADP1190
SPECIFICATIONS
VIN = 1.8 V, VEN = VIN, ILOAD = 200 mA, TA = 25°C, unless otherwise noted.
Table 1.
Parameter
INPUT VOLTAGE RANGE
EN INPUT
EN Input Threshold
Logic High Voltage
Logic Low Voltage
EN Input Pull-Up Resistance
Symbol
VIN
Test Conditions/Comments
TJ = −40°C to +85°C
Min
1.4
VEN_TH
1.4 V < VIN < 1.8 V, TJ = −40°C to +85°C (active low)
1.8 V ≤ VIN ≤ 3.6 V, TJ = −40°C to +85°C (active low)
1.4 V ≤ VIN ≤ 3.6 V
1.4 V ≤ VIN ≤ 3.6 V (chip enable)
0.35
0.45
1.2
VIH
VIL
REN
CURRENT
Ground Current 1
Shutdown Current
IGND
IOFF
Analog Switch Off Current
IA_OFF
LOAD SWITCH VIN TO VOUT RESISTANCE
SIGNAL SWITCH RESISTANCE
Max
3.6
Unit
V
1.2
1.2
V
V
V
V
MΩ
0.35
4
OUT open, TJ = −40°C to +85°C
EN = VIN or open
EN = VIN or open, TJ = −40°C to +85°C
Into S1, EN = VIN or open
2
0.4
µA
µA
µA
µA
VIN = 3.6 V, ILOAD = 200 mA, EN = 1.5 V
VIN = 2.5 V, ILOAD = 200 mA, EN = 1.5 V
VIN = 1.8 V, ILOAD = 200 mA, EN = 1.5 V, TJ = −40°C to +85°C
60
80
100
mΩ
mΩ
mΩ
Maximum value of analog input sweep
VIN = 3.6 V, ILOAD = 10 mA, EN = GND
VIN = 2.5 V, ILOAD = 10 mA, EN = GND
VIN = 1.8 V, ILOAD = 10 mA, EN = GND
VIN = 3.6 V, ILOAD = 10 mA, EN = GND
VIN = 1.8 V, ILOAD = 10 mA, EN = GND
0.6
1
2.0
0.5
1
Ω
Ω
Ω
Ω
Ω
0.7
2
RDSON
RDSON
RDS Flatness
OUTPUT DISCHARGE RESISTANCE
RDIS
−3 dB BANDWIDTH
VOUT TIME
Turn-On Delay Time
Turn-Off Delay Time
1
Typ
170
215
Ω
BW3dB
On load switch output and each analog switch output,
T1, T2, T3, and T4
VIN = 3.6 V, RLOAD = 50 Ω, CLOAD = 5 pF, see Figure 23
50
MHz
tON_DLY
tOFF_DLY
ILOAD = 200 mA, EN = GND, CLOAD = 0. 1 μF
VIN = 3.6 V, ILOAD = 200 mA, EN = 1.5 V, CLOAD = 0.1 μF
5
4
ms
μs
Ground current includes EN pull-down current.
TIMING DIAGRAM
TURN-ON
DELAY
TURN-OFF
DELAY
90%
TURN-ON
TIME
TURN-OFF
TIME
Figure 2. Timing Diagram
Rev. 0 | Page 3 of 12
11259-004
10%
ADP1190
Data Sheet
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter
IN to GND
OUT to GND
Sx to GND
Tx to GND
EN to GND
Continuous Load Switch Current
TA = 25°C
TA = 85°C
Continuous Diode Current
Storage Temperature Range
Junction Temperature
Operating Junction Temperature Range
Operating Ambient Temperature Range
Soldering Conditions
Rating
−0.3 V to +4.0 V
−0.3 V to VIN
−0.3 V to +4.0 V
−0.3 V to +4.0 V
−0.3 V to +4.0 V
±1 A
±500 mA
−50 mA
−65°C to +150°C
+150°C
−40°C to +125°C
−40°C to +85°C
JEDEC J-STD-020
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL DATA
Absolute maximum ratings apply individually only, not in
combination. The ADP1190 can be damaged when the junction
temperature limits are exceeded. Monitoring ambient temperature does not guarantee that TJ is within the specified temperature
limits. In applications with high power dissipation and poor
thermal resistance, the maximum ambient temperature may
need to be derated.
In applications with moderate power dissipation and low PCB
thermal resistance, the maximum ambient temperature can
exceed the maximum limit as long as the junction temperature
is within specification limits. The junction temperature (TJ) of
the device is dependent on the ambient temperature (TA), the
power dissipation of the device (PD), and the junction-to-ambient
thermal resistance of the package (θJA).
The junction-to-ambient thermal resistance (θJA) of the package
is based on modeling and calculation using a 4-layer board. The
junction-to-ambient thermal resistance is highly dependent on
the application and board layout. In applications where high maximum power dissipation exists, close attention to thermal board
design is required. The value of θJA may vary, depending on
PCB material, layout, and environmental conditions. The specified value of θJA is based on a 4-layer, 4 in. × 3 in. circuit board. See
JESD51-7 and JESD51-9 for detailed information on the board
construction. For additional information, see the AN-617
Application Note, Wafer Level Chip Scale Package, available at
www.analog.com.
ΨJB is the junction-to-board thermal characterization parameter
with units of °C/W. ΨJB of the package is based on modeling and
calculation using a 4-layer board. JESD51-12, Guidelines for
Reporting and Using Electronic Package Thermal Information,
states that thermal characterization parameters are not the same
as thermal resistances. ΨJB measures the component power
flowing through multiple thermal paths rather than through a
single path as in thermal resistance, θJB. Therefore, ΨJB thermal
paths include convection from the top of the package as well as
radiation from the package, factors that make ΨJB more useful
in real-world applications. Maximum junction temperature (TJ)
is calculated from the board temperature (TB) and power
dissipation (PD) using the formula
TJ = TB + (PD × ΨJB)
See JESD51-8 and JESD51-12 for more detailed information
about ΨJB.
THERMAL RESISTANCE
θJA and ΨJB are specified for the worst-case conditions, that is, a
device soldered in a circuit board for surface-mount packages.
Table 3. Thermal Resistance
Package Type
12-Ball WLCSP
ESD CAUTION
Maximum junction temperature (TJ) is calculated from the
ambient temperature (TA) and power dissipation (PD) using the
formula
TJ = TA + (PD × θJA)
Rev. 0 | Page 4 of 12
θJA
130
ΨJB
29.2
Unit
°C/W
Data Sheet
ADP1190
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
ADP1190
1
2
3
GND
T1
S1
EN
T2
S2
IN
T3
S3
OUT
T4
S4
A
B
C
TOP VIEW
(BALL SIDE DOWN)
Not to Scale
11259-002
D
Figure 3. Pin Configuration
Table 4. Pin Function Descriptions
Pin No.
A1
B1
C1
D1
A2
B2
C2
D2
A3
B3
C3
D3
Mnemonic
GND
EN
IN
OUT
T1
T2
T3
T4
S1
S2
S3
S4
Description
Ground.
Enable Input, Active Low.
Input Voltage.
Load Switch Output Voltage.
Channel 1 Analog Switch. Connect to the SIM card socket (has active discharge).
Channel 2 Analog Switch. Connect to the SIM card socket (has active discharge).
Channel 3 Analog Switch. Connect to the SIM card socket (has active discharge).
Channel 4 Analog Switch. Connect to the SIM card socket (has active discharge).
Channel 1 Analog Switch. Connect to the microcontroller.
Channel 2 Analog Switch. Connect to the microcontroller.
Channel 3 Analog Switch. Connect to the microcontroller.
Channel 4 Analog Switch. Connect to the microcontroller.
Rev. 0 | Page 5 of 12
ADP1190
Data Sheet
TYPICAL PERFORMANCE CHARACTERISTICS
VIN = 1.8 V, VEN = VIN, CIN = COUT = 1 µF, TA = 25°C, unless otherwise noted.
0.07
0.14
5mA
10mA
50mA
100mA
250mA
500mA
0.05
0.08
0.06
0.04
0.04
0.03
0.02
1.6
2.0
2.4
2.8
3.2
3.6
VIN (V)
0
10
11259-005
0
1.2
Figure 7. Load Switch Voltage Drop vs. Load Current,
Different Input Voltages
1.0
0.12
0.9
0.10
GROUND CURRENT (µA)
0.8
RDSON (Ω)
0.06
0.04
10mA
50mA
100mA
250mA
500mA
0
–40
–5
25
55
85
TEMPERATURE (°C)
0.7
5mA
10mA
50mA
100mA
250mA
500mA
0.6
0.5
0.4
0.3
0.2
0.1
0
1.2
11259-006
0.02
1000
100
ILOAD (mA)
Figure 4. Load Switch RDSON vs. Input Voltage (VIN), Different Load Currents
0.08
11259-008
0.01
0.02
1.6
2.0
2.4
2.8
3.2
11259-009
RDSON (Ω)
0.10
0.06
VOLTAGE DROP (V)
0.12
1.4V
1.5V
1.6V
1.8V
2.0V
2.4V
2.8V
3.0V
3.3V
3.6V
3.6
VIN (V)
Figure 8. Ground Current vs. Input Voltage, Different Load Currents
Figure 5. Load Switch RDSON vs. Temperature, Different Load Currents,
VIN = 1.8 V
0.7
0.09
0.08
0.6
RDSON (Ω)
0.06
0.05
0.04
0.03
10mA
50mA
100mA
250mA
500mA
0.01
0
–40
–5
25
TEMPERATURE (°C)
55
85
0.4
0.3
0.2
10mA
50mA
100mA
250mA
500mA
0.1
11259-007
0.02
0.5
Figure 6. Load Switch RDSON vs. Temperature, Different Load Currents,
VIN = 3.6 V
Rev. 0 | Page 6 of 12
0
–40
–5
25
55
85
TEMPERATURE (°C)
Figure 9. Ground Current vs. Temperature, Different Load Currents,
VIN = 1.8 V
11259-010
GROUND CURRENT (µA)
0.07
Data Sheet
ADP1190
1.2
4.0
3.6V
2.2V
1.8V
1.6V
1.4V
3.5
3.0
RDSON (Ω)
0.8
0.6
2.0
1.5
1.0
10mA
50mA
100mA
250mA
500mA
0
–40
–5
25
55
0.5
85
0
TEMPERATURE (°C)
0
0.4
1.2
1.6
2.0
2.4
2.8
3.2
3.6
Figure 13. Signal Switch RDSON vs. Analog Switch Voltage
10
1.4V
1.6V
1.8V
2.4V
2.8V
3.3V
3.6V
–40°C
–5°C
+25°C
+55°C
+85°C
9
8
7
RDSON (Ω)
0.5
0.8
ANALOG SWITCH VOLTAGE (V)
Figure 10. Ground Current vs. Temperature, Different Load Currents,
VIN = 3.6 V
0.6
0.4
11259-014
0.2
SHUTDOWN CURRENT (µA)
2.5
0.4
11259-011
GROUND CURRENT (µA)
1.0
0.3
0.2
6
5
4
3
2
0.1
–10
10
30
50
70
90
TEMPERATURE (°C)
0
11259-012
–30
Figure 11. Shutdown Current vs. Temperature, Different Input Voltages
0
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Figure 14. Signal Switch RDSON vs. Analog Switch Voltage and Temperature,
VIN = 1.4 V
3.0
–40°C
–5°C
+25°C
+55°C
+85°C
–40°C
–5°C
+25°C
+55°C
+85°C
2.5
1.4
2.0
1.2
RDSON (Ω)
GROUND CURRENT (µA)
1.6
0.4
ANALOG SWITCH VOLTAGE (V)
2.0
1.8
0.2
11259-015
1
0
–50
1.0
0.8
1.5
1.0
0.6
0.4
0.5
1.6
2.0
2.4
VIN (V)
2.8
3.2
3.6
0
11259-013
0
1.2
Figure 12. No Load Ground Current vs. Input Voltage and Temperature
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ANALOG SWITCH VOLTAGE (V)
1.6
1.8
11259-016
0.2
Figure 15. Signal Switch RDSON vs. Analog Switch Voltage and Temperature,
VIN = 1.8 V
Rev. 0 | Page 7 of 12
ADP1190
Data Sheet
3.0
T
–40°C
–5°C
+25°C
+55°C
+85°C
2.5
ENABLE
RDSON (Ω)
2.0
1
1.5
1.0
VOUT
0.5
0.4
0
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
ANALOG SWITCH VOLTAGE (V)
CH1 1.0V BW
CH3 2.0V BW
11259-017
0
M2.0ms
T 10.40%
A CH1
40.0mV
11259-020
3
Figure 19. Enable Debounce Behavior, VIN = 1.8 V
Figure 16. Signal Switch RDSON vs. Analog Switch Voltage and Temperature,
VIN = 3.6 V
T
T
ENABLE
ENABLE
1
T1
1
2
VOUT
VOUT
CH2 1.0V BW
M1.0ms
T 10.80%
A CH1
880mV
11259-018
CH1 2.0V BW
CH3 1.0V BW
CH1 1.0V BW
CH3 2.0V BW
T
ENABLE
1
T1
2
VOUT
M1.0ms
T 65.40%
A CH2
1.08V
11259-019
3
CH2 2.0V BW
A CH1
1.08V
Figure 20. Enable Debounce Behavior, VIN = 3.6 V
Figure 17. Typical Turn-On Delay Time, VIN = 1.8 V, 50 mA Load
CH1 2.0V BW
CH3 2.0V BW
M2.0ms
T 10.00%
Figure 18. Typical Turn-On Delay Time, VIN = 3.6 V, 100 mA Load
Rev. 0 | Page 8 of 12
11259-021
3
3
Data Sheet
ADP1190
THEORY OF OPERATION
The ADP1190 is a high-side load switch integrated with four
signal switches. The load switch and signal switches are turned
on by a low signal on the EN pin. A 4 MΩ pull-up resistor on
this pin allows it to be driven by an open-collector or mechanical switch. When the part is disabled, the T1 to T4 pins are
actively pulled down with a nominal resistance of 215 Ω. There
is a 5 ms debounce counter on EN for use with a mechanical
EN switch. That is, EN must be held low for 5 ms before the
part is enabled. If EN transitions high before this timeout, the
counter is reset and starts a new 5 ms count.
The signal path is controlled by a PMOS/NMOS transmission
gate with an on resistance of 2 Ω. Break-before-make logic
control ensures that the active pull-down is off before the signal
path is enabled.
In addition to these features, the ADP1190 occupies minimal
printed circuit board (PCB) space with an area less than
1.92 mm2 and a height of 0.50 mm. The ADP1190 is available in
an ultrasmall 1.2 mm × 1.6 mm, 12-ball, 0.4 mm pitch WLCSP.
P
S1
N
P
S2
N
P
S3
N
P
S4
N
OFF
5ms
DEBOUNCE
EN
T1
T2
T3
T4
GND
ON
4MΩ
OUT
11259-023
IN
Figure 21. Block Diagram with ESD Protection Devices
Rev. 0 | Page 9 of 12
ADP1190
Data Sheet
APPLICATION BLOCK DIAGRAM
MICROCONTROLLER
CONNECTOR
S1
SIM CARD
T1
P
I/O
N
S2
T2
P
I/O
N
S3
T3
P
RST
N
S4
T4
P
CLK
N
GND
GND
EN
4MΩ
OUT
IN
VCC
11259-003
VIN = 1.4V TO 3.6V
Figure 22. Typical Application
50Ω
VS
P
N
VOUT
NETWORK
ANALYZER
11259-022
50Ω
Figure 23. Bandwidth Measurement Setup
Rev. 0 | Page 10 of 12
Data Sheet
ADP1190
OUTLINE DIMENSIONS
1.24
1.20
1.16
BOTTOM VIEW
(BALL SIDE UP)
3
2
1
A
BALL A1
IDENTIFIER
1.64
1.60
1.56
1.20
REF
B
C
D
0.40
BSC
TOP VIEW
(BALL SIDE DOWN)
SEATING
PLANE
0.330
0.300
0.270
END VIEW
0.80
REF
COPLANARITY
0.04
0.300
0.260
0.220
0.230
0.200
0.170
02-22-2013-A
0.560
0.500
0.440
Figure 24. 12-Ball Wafer Level Chip Scale Package [WLCSP]
(CB-12-10)
Dimensions shown in millimeters
ORDERING GUIDE
Model 1
ADP1190ACBZ-R7
1
Temperature Range
−40°C to +85°C
Package Description
12-Ball Wafer Level Chip Scale Package [WLCSP]
Z = RoHS Compliant Part.
Rev. 0 | Page 11 of 12
Package Option
CB-12-10
Branding
LNE
ADP1190
Data Sheet
NOTES
©2013 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D11259-0-4/13(0)
Rev. 0 | Page 12 of 12
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