Zetex BCX55 Sot89 npn silicon planar medium power transistor Datasheet

BCX54
BCX55
BCX56
SOT89 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
✪
ISSUE 3 – FEBRUARY 1996
PARTMARKING DETAILS:BCX54 – BA
BCX54-10 – BC
BCX55 – BE
BCX55-10 – BG
BCX56 – BH
BCX56-10 – BK
C
BCX54-16 – BD
BCX55-16 – BM
BCX56-16 – BL
E
COMPLEMENTARY TYPES:BCX54 – BCX51
BCX55 – BCX52
C
BCX56 – BCX53
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
BCX54
BCX55
BCX56
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
45
60
100
V
45
60
80
Emitter-Base Voltage
VEBO
5
V
V
Peak Pulse Current
ICM
2
A
Continuous Collector Current
IC
1
A
Power Dissipation at Tamb=25°C
Ptot
1
W
-65 to +150
°C
Operating and Storage Temperature Range Tj:Tstg
UNIT
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
BCX54
BCX55
BCX56
V(BR)CBO
45
60
100
V
IC =100µA
Collector-Emitter
Breakdown Voltage
BCX54
BCX55
BCX56
V(BR)CEO
45
60
80
V
IC =10mA*
5
Emitter-Base Breakdown Voltage
V(BR)EBO
V
IE =10µA
Collector Cut-Off Current
ICBO
0.1
20
µA
µA
VCB =30V
VCB =30V, Tamb =150°C
Emitter Cut-Off Current
IEBO
20
nA
VEB =4V
0.5
V
IC =500mA, IB =50mA*
1.0
V
Collector-Emitter Saturation Voltage VCE(sat)
Base-Emitter Turn-On Voltage
VBE(on)
Static Forward Current Transfer
Ratio
hFE
–10
–16
Transition Frequency
fT
Output Capacitance
Cobo
25
40
25
63
100
250
160
250
150
MHz IC =50mA, VCE =10V,
f=100MHz
15
pF
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
3 - 35
IC =500mA, VCE =2V*
IC =5mA, VCE =2V*
IC =150mA, VCE =2V*
IC =500mA, VCE =2V*
IC =150mA, VCE =2V*
IC =150mA, VCE =2V*
VCB =10V, f=1MHz
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