EVDD430S / EVDD430CY 30A Ultra Fast MOSFET / IGBT Driver Evaluation Boards General Description The EVDD430S / EVDD430CY evaluation boards are general-purpose circuit boards designed to simplify the evaluation of the IXYS IXDS430, IXDD430, IXDI430, and IXDN430 MOSFET / IGBT driver, as well as to provide a building block for power circuit development. Any of three IC package types, SOIC-28, 5 lead TO-220, and 5 lead TO-263 are available on two different boards. The board layouts enable the use of MOSFETs or IGBTs in the TO-247, TO-264 or SOT-227 packages and also allow the driven devices to be mounted to a heat sink. In doing so, the board assemblies can be used as a ground referenced, low side power switch for both single-ended and push-pull configurations. The board layout for all three driver packages allows the device tabs to be soldered or strapped to a ground plane for improved cooling in high-power, high frequency applications with large MOSFET devices. The layouts have also been optimized for minimal trace routing and maximized area to reduce inductance and enhance performance. Figures 1and 2 are photographs of the front and back of the EVDD430CY board loaded with an IXDI430CI TO-220 driver while figures 3 and 4 show the EVDD430S board equipped with the IXDS430S 28 pin SOIC package. The low level inputs are shown at various points on the boards. The 'Signal In' is a TTL or CMOS level compatible input which controls the on or off state of the power device Q1or Q2. 'Disable' is a optional input, depending on which device is installed, and controls the Tri-State output (IXDD430, and IXDS430 devices only). The Tri-State mode could be used in a motor drive circuit in which an over current could be detected and then a disabling signal fed back, to control the turn off of an IGBT at a slower rate through a seperate 'bleed off' resistor. The 'VCC-IN' is the low voltage (8.5-35V) supply input. Figures 5 and 6 illustrate the mounting of a TO-247, TO-264, SOT-227 power devices. Circuit Operation The schematic diagrams for the evaluation boards are shown in Figures 8 and 9. The external drive signal is applied to 'Signal In' test point. The PCBs also provide solder pads across the 50 Ohm input resistor R4 so that a coax can be soldered directly to the board.The PCBs have been designed in an attempt to minimize parasitic inductance associated with long and narrow traces. Large attachment points have been provided so that the user can connect larger wire or copper strap to minimize loop inductance. The diode, resistor combination of DA and RA provides a controlled rate discharge path for the gate of the power device when the Enable function forces the driver into its Tri-State mode. In this mode, the turn-off time of the power device is determined by the time constant of the input gate capacitance Ciss and the value of the resistor RA. RA has not been loaded so that the user may choose the value which best suits the design. The drive output is attached to the MOSFET / IGBT via the gate drive resistor positions. The resistors can be replaced with values to optimize the turn on, turn off performance of the design. The IXDS430S also includes seperate drive output source / sink pins and the EVDD430S evaluation board is arranged such that the turn on rate can be different from the turn off rate via the seperated output pins of the device. The IXD_430 C and Y output pins are internally connected and have just one set of gate resistors. Finally, the devices are available with an undervoltage trip point of 8.5V or 11.75V, see order table. If the supply voltage dips below this fixed point, drive to the power device is disabled. This feature is selectable on the EVDD430S PCB by way of JP2 while JP1 provides the option to invert the drive signal. Ordering Information Part Number Companion Device (1) Options EVDD430CI IXDD430CI TO-220 UV = 11.75 NI with Enable EVDD430MCI IXDD430MCI TO-220 UV = 8.5 NI with Enable EVDD430YI IXDD430YI TO-263 UV = 11.75 NI with Enable EVDD430MYI IXDD430MYI TO-263 UV = 8.5 NI with Enable EVDI430CI IXDI430CI TO-220 UV = 11.75 Inverting EVDI430MCI IXDI430MCI TO-220 UV = 8.5 Inverting EVDI430YI IXDI430YI TO-263 UV = 11.75 Inverting EVDI430MYI IXDI430MYI TO-263 UV = 8.5 Inverting EVDN430CI IXDN430CI TO-220 UV = 11.75 NI EVDN430MCI IXDN430MCI TO-220 UV = 8.5 NI EVDN430YI IXDN430YI TO-263 UV = 11.75 NI EVDN430MYI IXDN430MYI TO-263 UV = 8.5 NI EVDS430SI IXDS430SI 28 pin SOIC UV / Invert = Selectable w/ Enable UV = Under Voltage Trip Point, NI = Non Inverting (1) Companion device to be mounted by user. Copyright © IXYS CORPORATION 2003 First Release EVDD430S/EVDD430CY Figure 1 EVDD430CY Evaluation board with 5 lead TO-220 driver installed. Figure 2 Figure 3 EVDD430CY Evaluation board, back side. Device leads Figure 4 EVDD430S Evaluation board. EVDD430S Evaluation board, back side. PCB Clearance hole in PCB TO-247, TO-264 Heat Sink Heat Sink Figure 5 Evaluation board side view showing a installed in a high power configuration. SOT-227 Insulator power device Figure 6 Evaluation board side view showing a SOT-227 power device installed in a high power configuration. 2 EVDD430S/EVDD430CY Input Function Vcc In Supply 8V-35V GND Ground Signal In External drive signal Disable High for device disable INV** Output inversion UVSEL** Under voltage select ** Available on the EVDD430S board only The Evaluation Boards are supplied with either IXDD408YI, IXDD409YI, IXDI409YI, IXDN409YI or IXDD414YI 5-Pin TO263 devices installed, depending upon the evaluation board part number ordered. To use the evaluation board with a different package type, the installed device must be removed, and the new device installed in the appropriate location. 0.01UF 50V C18 0.01UF 50V C17 0.01UF 50V C16 TP1 0.01UF 50V C15 Vcc In 0.47UF 50V C14 JP2 open for UVSEL at 12.5V, jumpered for 8.5V 0.47UF 50V C13 JP1 open for non-inverted output, jumpered for inverted 0.47UF 50V C12 0.47UF 50V C11 Figure 7 - PCB Connection Table 4 5 6 7 Signal In R11 220 8 9 Q3 11 R1 100 TP4 2 12 1 Disable 3 2N7000 10 R4 R2 49.9 1K R6 13 10K 14 Vcc N/C OUT P UVSEL OUT P N/C IN EN INV OUT P OUT N OUT N OUT N GND GND GND GND GND GND GND GND 26 25 R7 24 Drain 1 TP5 23 R8 22 1 2 21 Q1 20 R9 1 1 3 TO-247 Q2 3 19 18 R10 2 SOT-227 1,4 1 17 16 15 RA DA Not Loaded GND 0.01UF 50V NPO C16 0.01UF 50V NPO C15 + + 10UF 35V C8 + 10UF 35V C7 0.01UF 50V NPO C14 0.01UF 50V NPO C13 + 10UF 35V C6 + 10UF 35V C5 0.47UF 50V C12 0.47UF 50V C11 + 10UF 35V C4 + 10UF 35V C3 + 10UF 35V C2 0.47UF 50V C9 TP1 10UF 35V C1 Vcc In 0.47UF 50V C10 TP2 Figure 8 EVDD430S Schematic Diagram R3 10K TP2 U1 / U2 2 CI / YI package R1 1 Q2 TO-247 1 P1 Vcc P2 OUT 3 TP3 R7 240 P4 IN Q3 SOT-227 R2 1 P5 EN 3 R5 100 2 Q1 2N7000 1 TP4 3 2 1,4 P3 GND Signal In RA Disable R4 49.9 R6 1K GND DA Not Loaded TP5 Figure 9 - EVDD430CY Schematic Diagram NOTE: The schematic shows two MOSFET devices. However only one device can be installed at any time. 3 + + 10UF 35V C10 Vcc 27 + 10UF 35V C9 Vcc + 10UF 35V C8 Vcc Vcc + 10UF 35V C7 Vcc Vcc + 10UF 35V C6 Vcc + 10UF 35V C5 3 JP1 JP2 28 10UF 35V C4 2 R3 IXDS430 1 2K TP3 + U1 + 10UF 35V C3 10UF 35V C1 .1UF 100V C2 R5 3.32 EVDD430S/EVDD430CY IXYS Corporation 3540 Bassett St; Santa Clara, CA 95054 Tel: 408-982-0700; Fax: 408-496-0670 e-mail: [email protected] www.ixys.com IXYS Semiconductor GmbH Edisonstrasse15 ; D-68623; Lampertheim Tel: +49-6206-503-0; Fax: +49-6206-503627 e-mail: [email protected] 4 Directed Energy, Inc. An IXYS Company 2401 Research Blvd. Ste. 108 Ft. Collins, CO 80526 Tel: 970-493-1901; Fax: 970-493-1903 e-mail: [email protected] www.directedenergy.com