TI CD54HC40105F3A High-speed cmos logic 4-bit x 16-word fifo register Datasheet

[ /Title
(CD74
HC401
05,
CD74
HCT40
105)
/Subject
(High
Speed
CMOS
CD54HC40105, CD74HC40105,
CD54HCT40105, CD74HCT40105
Data sheet acquired from Harris Semiconductor
SCHS222C
High-Speed CMOS Logic
4-Bit x 16-Word FIFO Register
February 1998 - Revised October 2003
Features
Description
• Independent Asynchronous Inputs and Outputs
The ’HC40105 and ’HCT40105 are high-speed silicon-gate
CMOS devices that are compatible, except for “shift-out”
circuitry, with the CD40105B. They are low-power first-in-out
(FIFO) “elastic” storage registers that can store 16 four-bit
words. The 40105 is capable of handling input and output
data at different shifting rates. This feature makes it
particularly useful as a buffer between asynchronous
systems.
• Expandable in Either Direction
• Reset Capability
• Status Indicators on Inputs and Outputs
• Three-State Outputs
• Shift-Out Independent of Three-State Control
Each work position in the register is clocked by a control flipflop, which stores a marker bit. A “1” signifies that the position’s data is filled and a “0” denotes a vacancy in that position. The control flip-flop detects the state of the preceding
flip-flop and communicates its own status to the succeeding
flip-flop. When a control flip-flop is in the “0” state and sees a
“1” in the preceeding flip-flop, it generates a clock pulse that
transfers data from the preceding four data latches into its
own four data latches and resets the preceding flip-flop to
“0”. The first and last control flip-flops have buffered outputs.
Since all empty locations “bubble” automatically to the input
end, and all valid data ripple through to the output end, the
status of the first control flip-flop (DATA-IN READY) indicates
if the FIFO is full, and the status of the last flip-flop (DATAOUT READY) indicates if the FIFO contains data. As the
earliest data are removed from the bottom of the data stack
(the output end), all data entered later will automatically
propagate (ripple) toward the output.
• Fanout (Over Temperature Range)
- Standard Outputs . . . . . . . . . . . . . . . 10 LSTTL Loads
- Bus Driver Outputs . . . . . . . . . . . . . 15 LSTTL Loads
• Wide Operating Temperature Range . . . -55oC to 125oC
• Balanced Propagation Delay and Transition Times
• Significant Power Reduction Compared to LSTTL
Logic ICs
• HC Types
- 2V to 6V Operation
- High Noise Immunity: NIL = 30%, NIH = 30% of VCC
at VCC = 5V
• HCT Types
- 4.5V to 5.5V Operation
- Direct LSTTL Input Logic Compatibility,
VIL= 0.8V (Max), VIH = 2V (Min)
- CMOS Input Compatibility, Il ≤ 1µA at VOL, VOH
Ordering Information
PART NUMBER
TEMP. RANGE (oC)
PACKAGE
Applications
CD54HC40105F3A
-55 to 125
16 Ld CERDIP
• Bit-Rate Smoothing
CD54HCT40105F3A
-55 to 125
16 Ld CERDIP
• CPU/Terminal Buffering
CD74HC40105E
-55 to 125
16 Ld PDIP
• Data Communications
CD74HC40105M
-55 to 125
16 Ld SOIC
• Peripheral Buffering
CD74HC40105MT
-55 to 125
16 Ld SOIC
• Line Printer Input Buffers
CD74HC40105M96
-55 to 125
16 Ld SOIC
• Auto-Dialers
CD74HCT40105E
-55 to 125
16 Ld PDIP
• CRT Buffer Memories
CD74HCT40105M
-55 to 125
16 Ld SOIC
• Radar Data Acquisition
CD74HCT40105MT
-55 to 125
16 Ld SOIC
CD74HCT40105M96
-55 to 125
16 Ld SOIC
NOTE: When ordering, use the entire part number. The suffix 96
denotes tape and reel. The suffix T denotes a small-quantity reel
of 250.
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright
© 2003, Texas Instruments Incorporated
1
CD54HC40105, CD74HC40105, CD54HCT40105, CD74HCT40105
Pinout
Three-State Outputs
In order to facilitate data busing, three-state outputs (Q0 to
Q3) are provided on the data output lines, while the load
condition of the register can be detected by the state of the
DOR output. A HIGH on the three-state control flag (output
enable input OE) forces the outputs into the high-impedance
OFF-state mode. Note that the shift-out signal, unlike that in
the CD40105B, is independent of the three-state output
control. In the CD40105B, the three-state control must not
be shifted from High to Low when the shift-out signal is Low
(data loss would occur). In the high-speed CMOS version
this restriction has been eliminated.
CD54HC40105, CD54HCT40105
(CERDIP)
CD74HC40105, CD74HCT40105
(PDIP, SOIC)
TOP VIEW
THREE-STATE
1
CONTROL
DIR 2
SI 3
16 VCC
15 SO
14 DOR
D0 4
13 Q0
D1 5
12 Q1
D2 6
11 Q2
D3 7
10 Q3
GND 8
9 MR
Cascading
The 40105 can be cascaded to form longer registers simply
by connecting the DIR to SO and DOR to SI. In the cascaded
mode, a MASTER RESET pulse must be applied after the
supply voltage is turned on. For words wider than four bits, the
DIR and the DOR outputs must be gated together with AND
gates. Their outputs drive the SI and SO inputs in parallel, if
expanding is done in both directions (see Figures 12 and 13).
Loading Data
Data can be entered whenever the DATA-IN READY (DIR)
flag is high, by a low to high transition on the SHIFT-IN (SI)
input. This input must go low momentarily before the next
word is accepted by the FIFO. The DIR flag will go low
momentarily, until the data have been transferred to the second location. The flag will remain low when all 16-word locations are filled with valid data, and further pulses on the SI
input will be ignored until DIR goes high.
Functional Diagram
THREESTATE
CONTROL
1
4
13
5
12
6
11
7
10
D0
D1
Unloading Data
D2
As soon as the first word has rippled to the output, the dataout ready output (DOR) goes HIGH and data of the first word
is available on the outputs. Data of other words can be
removed by a negative-going transition on the shift-out input
(SO). This negative-going transition causes the DOR signal
to go LOW while the next word moves to the output. As long
as valid data is available in the FIFO, the DOR signal will go
high again, signifying that the next word is ready at the
output. When the FIFO is empty, DOR will remain LOW, and
any further commands will be ignored until a “1” marker
ripples down to the last control register and DOR goes
HIGH. If during unloading SI is HIGH, (FIFO is full) data on
the data input of the FIFO is entered in the first location.
D3
SHIFT IN
SHIFT OUT
MASTER
RESET
Master Reset
A high on the MASTER RESET (MR) sets all the control
logic marker bits to “0”. DOR goes low and DIR goes high.
The contents of the data register are not changed, only
declared invalid, and will be superseded when the first word
is loaded. Thus, MR does not clear data within the register
but only the control logic. If the shift-in flag (SI) is HIGH
during the master reset pulse, data present at the input (D0
to D3) are immediately moved into the first location upon
completion of the reset process.
2
Q0
Q1
Q2
Q3
3
15
9
14 DATA-OUT
READY
2
DATA-IN
READY
GND = 8
VCC = 16
CD54HC40105, CD74HC40105, CD54HCT40105, CD74HCT40105
INPUT
BUFFERS
D0
4
D1
5
D2
6
D3
7
OUTPUT
BUFFERS
13 Q0
12 Q1
4 x 16
DATA
REGISTER
11 Q2
10 Q3
1
THREE-STATE CONTROL
DATA-OUT READY (DOR)
DATA-IN READY (DIR)
2
CONTROL LOGIC
14
SHIFT OUT (SO)
3
SHIFT IN (SI)
15
9
MASTER
RESET
(MR)
FIGURE 1. FUNCTIONAL BLOCK DIAGRAM
3
CD54HC40105, CD74HC40105, CD54HCT40105, CD74HCT40105
9
MR
14
DOR
SI
3
15
R Q
†
S Q
F/F1
F/Fs
2-15
F/F16
R Q
R Q
R Q
††
††
††
S Q
S Q
S Q
S0
R
†
14 x
2
S Q
DIR
14 x
13
4
D0
CL
CL
CL
CL
CL
Q0
CL
5
12
D1
6
4
LATCHES
4 x 14
LATCHES
4
LATCHES
D2
7
D3
L1
14 x L1
L16
POSITION 1
POSITION 2-15
POSITIONS 16
1
OE
† “S” overrides “R”.
†† “R” overrides “S”.
FIGURE 2. LOGIC DIAGRAM
4
THREESTATE
OUTPUT
BUFFERS
E
E
Q1
11
Q2
10
Q3
CD54HC40105, CD74HC40105, CD54HCT40105, CD74HCT40105
Absolute Maximum Ratings
Thermal Information
DC Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 7V
DC Input Diode Current, IIK
For VI < -0.5V or VI > VCC + 0.5V . . . . . . . . . . . . . . . . . . . . . .±20mA
DC Output Diode Current, IOK
For VO < -0.5V or VO > VCC + 0.5V . . . . . . . . . . . . . . . . . . . .±20mA
DC Output Source or Sink Current per Output Pin, IO
For VO > -0.5V or VO < VCC + 0.5V . . . . . . . . . . . . . . . . . . . .±25mA
DC VCC or Ground Current, ICC . . . . . . . . . . . . . . . . . . . . . . . . .±50mA
Thermal Resistance (Typical, Note 1)
θJA (oC/W)
E (PDIP) Package . . . . . . . . . . . . . . . . . . . . . . . . . .
67
M (SOIC) Package. . . . . . . . . . . . . . . . . . . . . . . . . .
73
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . 150oC
Maximum Storage Temperature Range . . . . . . . . . .-65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300oC
(SOIC - Lead Tips Only)
Operating Conditions
Temperature Range (TA) . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC
Supply Voltage Range, VCC
HC Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2V to 6V
HCT Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 5.5V
DC Input or Output Voltage, VI, VO . . . . . . . . . . . . . . . . . 0V to VCC
Input Rise and Fall Time
2V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000ns (Max)
4.5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500ns (Max)
6V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400ns (Max)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. The package thermal impedance is calculated in accordance with JESD 51-7.
DC Electrical Specifications
TEST
CONDITIONS
PARAMETER
25oC
-40oC TO 85oC -55oC TO 125oC
SYMBOL
VI (V)
IO (mA)
VCC
(V)
VIH
-
-
2
1.5
-
-
1.5
4.5
3.15
-
-
3.15
-
3.15
-
V
6
4.2
-
-
4.2
-
4.2
-
V
MIN
TYP
MAX
MIN
MAX
MIN
MAX
UNITS
-
1.5
-
V
HC TYPES
High Level Input
Voltage
Low Level Input
Voltage
High Level Output
Voltage
CMOS Loads
VIL
VOH
-
VIH or VIL
High Level Output
Voltage
TTL Loads
Low Level Output
Voltage
CMOS Loads
VOL
VIH or VIL
Low Level Output
Voltage
TTL Loads
Input Leakage
Current
Quiescent Device
Current
-
2
-
-
0.5
-
0.5
-
0.5
V
4.5
-
-
1.35
-
1.35
-
1.35
V
6
-
-
1.8
-
1.8
-
1.8
V
-0.02
2
1.9
-
-
1.9
-
1.9
-
V
-0.02
4.5
4.4
-
-
4.4
-
4.4
-
V
-0.02
6
5.9
-
-
5.9
-
5.9
-
V
-
-
-
-
-
-
-
-
-
V
-4
4.5
3.98
-
-
3.84
-
3.7
-
V
-5.2
6
5.48
-
-
5.34
-
5.2
-
V
0.02
2
-
-
0.1
-
0.1
-
0.1
V
0.02
4.5
-
-
0.1
-
0.1
-
0.1
V
0.02
6
-
-
0.1
-
0.1
-
0.1
V
-
-
-
-
-
-
-
-
-
V
4
4.5
-
-
0.26
-
0.33
-
0.4
V
5.2
6
-
-
0.26
-
0.33
-
0.4
V
II
VCC or
GND
-
6
-
-
±0.1
-
±1
-
±1
µA
ICC
VCC or
GND
0
6
-
-
8
-
80
-
160
µA
5
CD54HC40105, CD74HC40105, CD54HCT40105, CD74HCT40105
DC Electrical Specifications
(Continued)
TEST
CONDITIONS
25oC
-40oC TO 85oC -55oC TO 125oC
VCC
(V)
MIN
TYP
MAX
MIN
MAX
MIN
MAX
UNITS
PARAMETER
SYMBOL
VI (V)
IO (mA)
Three-State Leakage
Current
IOZ
VIL or VIH
VO =
VCC or
GND
6
-
-
±0.5
-
±5
-
±10
µA
High Level Input
Voltage
VIH
-
-
4.5 to
5.5
2
-
-
2
-
2
-
V
Low Level Input
Voltage
VIL
-
-
4.5 to
5.5
-
-
0.8
-
0.8
-
0.8
V
High Level Output
Voltage
CMOS Loads
VOH
VIH or VIL
-0.02
4.5
4.4
-
-
4.4
-
4.4
-
V
-4
4.5
3.98
-
-
3.84
-
3.7
-
V
0.02
4.5
-
-
0.1
-
0.1
-
0.1
V
4
4.5
-
-
0.26
-
0.33
-
0.4
V
HCT TYPES
High Level Output
Voltage
TTL Loads
Low Level Output
Voltage
CMOS Loads
VOL
VIH or VIL
Low Level Output
Voltage
TTL Loads
II
VCC and
GND
0
5.5
-
-
±0.1
-
±1
-
±1
µA
Quiescent Device
Current
ICC
VCC or
GND
0
5.5
-
-
8
-
80
-
160
µA
Three-State Leakage
Current
IOZ
VIL or VIH
VO =
VCC or
GND
5.5
-
-
±0.5
-
±5
-
±10
µA
Additional Quiescent
Device Current Per
Input Pin: 1 Unit Load
∆ICC
(Note 2)
VCC
-2.1
-
4.5 to
5.5
-
100
360
-
450
-
490
µA
Input Leakage
Current
NOTE:
2. For dual-supply systems theoretical worst case (VI = 2.4V, VCC = 5.5V) specification is 1.8mA.
HCT Input Loading Table
INPUT
UNIT LOADS
OE
0.75
SI, SO
0.4
Dn
0.3
MR
1.5
NOTE: Unit Load is ∆ICC limit specified in DC Electrical Table, e.g.,
360µA max at 25oC.
6
CD54HC40105, CD74HC40105, CD54HCT40105, CD74HCT40105
Prerequisite for Switching Specifications
25oC
PARAMETER
-40oC TO 85oC
-55oC TO 125oC
SYMBOL
VCC (V)
MIN
MAX
MIN
MAX
MIN
MAX
UNITS
SI Pulse Width
HIGH or LOW
tW
2
80
-
100
-
120
-
ns
4.5
16
-
20
-
24
-
ns
6
14
-
17
-
20
-
ns
SO Pulse Width
HIGH or LOW
tW
2
120
-
150
-
180
-
ns
4.5
24
-
30
-
36
-
ns
6
20
-
26
-
31
-
ns
HC TYPES
DIR Pulse Width
HIGH or LOW
DOR Pulse Width
HIGH or LOW
MR Pulse Width HIGH
Removal Time
MR to SI
Set-Up Time
Dn to SI
Hold Time
Dn to SI
Maximum Pulse Frequency
SI, SO
tW
tW
tW
tREM
tSU
tH
fMAX
2
200
-
250
-
300
-
ns
4.5
40
-
50
-
60
-
ns
6
34
-
43
-
51
-
ns
2
200
-
250
-
300
-
ns
4.5
40
-
50
-
60
-
ns
6
34
-
43
-
51
-
ns
2
120
-
150
-
180
-
ns
4.5
24
-
30
-
36
-
ns
6
20
-
26
-
31
-
ns
2
50
-
65
-
75
-
ns
4.5
10
-
13
-
15
-
ns
6
9
-
11
-
13
-
ns
2
5
-
5
-
5
-
ns
4.5
5
-
5
-
5
-
ns
6
5
-
5
-
5
-
ns
2
125
-
155
-
190
-
ns
4.5
25
-
31
-
38
-
ns
6
21
-
26
-
32
-
ns
2
3
-
2
-
2
-
MHz
4.5
15
-
12
-
10
-
MHz
6
18
-
14
-
12
-
MHz
HCT TYPES
SI Pulse Width HIGH or LOW
tW
4.5
16
-
20
-
24
-
ns
SO Pulse Width HIGH or
LOW
tW
4.5
16
-
20
-
24
-
ns
DIR Pulse Width HIGH or
LOW
tW
4.5
40
-
50
-
60
-
ns
DOR Pulse Width HIGH or
LOW
tW
4.5
40
-
50
-
60
-
ns
MR Pulse Width HIGH
Removal Time MR to SI
Set-Up Time Dn to SI
Hold Time Dn to SI
Maximum Pulse Frequency
SI, SO
tW
4.5
24
-
30
-
36
-
ns
tREM
4.5
15
-
19
-
22
-
ns
tSU
4.5
0
-
0
-
0
-
ns
tH
4.5
25
-
31
-
38
-
ns
fMAX
4.5
15
-
12
-
10
-
MHz
7
CD54HC40105, CD74HC40105, CD54HCT40105, CD74HCT40105
Switching Specifications Input tr, tf = 6ns
PARAMETER
TEST
SYMBOL CONDITIONS
25oC
-40oC TO 85oC -55oC TO 125oC
VCC
(V)
MIN
TYP
MAX
MIN
MAX
MIN
MAX
UNITS
CL = 50pF
2
-
-
175
-
220
-
265
ns
CL = 50pF
4.5
-
-
35
-
44
-
53
ns
CL = 15pF
5
-
15
-
-
-
-
-
ns
CL = 50pF
6
-
-
30
-
37
-
45
ns
CL = 50pF
2
-
-
210
-
265
-
315
ns
CL = 50pF
4.5
-
-
42
-
53
-
63
ns
CL = 15pF
5
-
18
-
-
-
-
-
ns
CL = 50pF
6
-
-
36
-
45
-
54
ns
CL = 50pF
2
-
-
210
-
265
-
315
ns
CL = 50pF
4.5
-
-
42
-
53
-
63
ns
CL = 15pF
5
-
18
-
-
-
-
-
ns
CL = 50pF
6
-
-
36
-
45
-
54
ns
CL = 50pF
2
-
-
400
-
500
-
600
ns
CL = 50pF
4.5
-
-
80
-
100
-
120
ns
CL = 15pF
5
-
35
-
-
-
-
-
ns
CL = 50pF
6
-
-
68
-
85
-
102
ns
CL = 50pF
2
-
-
2000
-
2500
-
3000
ns
4.5
-
-
400
-
500
-
600
ns
6
-
-
340
-
425
-
510
ns
2
-
-
2500
-
3125
-
3750
ns
4.5
-
-
500
-
625
-
750
ns
6
-
-
425
-
532
-
638
ns
2
-
-
1500
-
1900
-
2250
ns
4.5
-
-
300
-
380
-
450
ns
6
-
-
260
-
330
-
380
ns
2
-
-
150
-
190
-
225
ns
4.5
-
-
30
-
38
-
45
ns
6
-
-
26
-
33
-
38
ns
2
-
-
140
-
175
-
210
ns
CL = 50pF
4.5
-
-
28
-
35
-
42
ns
CL = 50pF
6
-
-
24
-
30
-
36
ns
tTLH, tTHL CL = 50pF
2
-
-
75
-
95
-
110
ns
4.5
-
-
15
-
19
-
22
ns
6
-
-
13
-
16
-
19
ns
HC TYPES
Propagation Delay
MR to DIR, DOR
SI to DIR
SO to DOR
SO to Qn
Propagation Delay/Ripple thru
Delay
SI to DOR
Propagation Delay/Ripple thru
Delay
SO to DIR
Propagation Delay/Ripple thru
Delay
SI to Qn
Three-State Output Enable
OE to Qn
Three-State Output Disable
OE to Qn
Output Transition Time
Maximum SI, SO Frequency
tPHL,
tPLH
tPHL,
tPLH
tPHL,
tPLH
tPHL,
tPLH
tPLH
tPLH
tPLH
CL = 50pF
CL = 50pF
tPZH, tPZL CL = 50pF
tPHZ, tPLZ CL = 50pF
fMAX
CL = 15pF
5
-
32
-
-
-
-
-
MHz
Input Capacitance
CIN
CL = 50pF
-
-
-
10
-
10
-
10
pF
Power Dissipation Capacitance
(Notes 3, 4)
CPD
CL = 15pF
5
-
83
-
-
-
-
-
pF
8
CD54HC40105, CD74HC40105, CD54HCT40105, CD74HCT40105
Switching Specifications Input tr, tf = 6ns
PARAMETER
Three-State Output
Capacitance
(Continued)
TEST
SYMBOL CONDITIONS
25oC
-40oC TO 85oC -55oC TO 125oC
VCC
(V)
MIN
TYP
MAX
MIN
MAX
MIN
MAX
UNITS
CO
CL = 50pF
-
-
-
15
-
15
-
15
pF
tPLH,
tPHL
CL = 50pF
4.5
-
-
36
-
45
-
54
ns
CL = 15pF
5
-
15
-
-
-
-
-
ns
tPLH,
tPHL
CL = 50pF
4.5
-
-
42
-
53
-
63
ns
CL =15pF
5
-
18
-
-
-
-
-
ns
tPLH,
tPHL
CL = 50pF
4.5
-
-
42
-
53
-
63
ns
CL =15pF
5
-
18
-
-
-
-
-
ns
tPLH,
tPHL
CL = 50pF
4.5
-
-
80
-
100
-
120
ns
CL =15pF
5
-
35
-
-
-
-
-
ns
Propagation Delay/Ripple thru
Delay
SI to DOR
tPLH
CL = 50pF
4.5
-
-
400
-
500
-
600
ns
Propagation Delay/Ripple thru
Delay
SO to DIR
tPLH
CL = 50pF
4.5
-
-
500
-
625
-
750
ns
Propagation Delay/Ripple thru
Delay
SI to Qn
tPLH
CL = 50pF
4.5
-
-
300
-
380
-
450
ns
Three-State Output Enable
OE to Qn
tPZH, tPZL CL = 50pF
4.5
-
-
35
-
44
-
53
ns
Three-State Output Disable
OE to Qn
tPHZ, tPLZ CL = 50pF
4.5
-
-
30
-
38
-
45
ns
Output Transition Time
tTLH, tTHL CL = 50pF
4.5
-
-
15
-
19
-
22
ns
HCT TYPES
Propagation Delay Time
MR to DIR, DOR
SI to DIR
SO to DOR
SO to Qn
Maximum CP Frequency
fMAX
CL =15pF
5
-
32
-
-
-
-
-
MHz
Input Capacitance
CIN
CL = 50pF
-
-
-
10
-
10
-
10
pF
Power Dissipation Capacitance
(Notes 3, 4)
CPD
CL =15pF
5
-
83
-
-
-
-
-
pF
Three-State Output
Capacitance
CO
CL = 50pF
-
-
-
15
-
15
-
15
pF
NOTES:
3. CPD is used to determine the dynamic power consumption, per package.
4. PD = CPD VCC2 fi + Σ (CL VCC2 fo) where fi = Input Frequency, fo = Output Frequency, CL = Output Load Capacitance, VCC = Supply
Voltage.
9
CD54HC40105, CD74HC40105, CD54HCT40105, CD74HCT40105
Test Circuits and Waveforms
tfCL
trCL
CLOCK
tWL + tWH =
90%
10%
I
fCL
CLOCK
50%
50%
1.3V
0.3V
tf = 6ns
tr = 6ns
VCC
90%
50%
10%
GND
tTLH
3V
2.7V
1.3V
0.3V
INPUT
GND
tTHL
90%
50%
10%
INVERTING
OUTPUT
tWH
FIGURE 4. HCT CLOCK PULSE RISE AND FALL TIMES AND
PULSE WIDTH
tf = 6ns
tTHL
GND
NOTE: Outputs should be switching from 10% VCC to 90% VCC in
accordance with device truth table. For fMAX, input duty cycle = 50%.
FIGURE 3. HC CLOCK PULSE RISE AND FALL TIMES AND
PULSE WIDTH
tr = 6ns
1.3V
1.3V
tWL
tWH
NOTE: Outputs should be switching from 10% VCC to 90% VCC in
accordance with device truth table. For fMAX, input duty cycle = 50%.
tPHL
2.7V
0.3V
GND
tWL
INPUT
tfCL = 6ns
I
fCL
3V
VCC
50%
10%
tWL + tWH =
trCL = 6ns
tTLH
90%
1.3V
10%
INVERTING
OUTPUT
tPHL
tPLH
FIGURE 5. HC TRANSITION TIMES AND PROPAGATION
DELAY TIMES, COMBINATION LOGIC
tPLH
FIGURE 6. HCT TRANSITION TIMES AND PROPAGATION
DELAY TIMES, COMBINATION LOGIC
10
CD54HC40105, CD74HC40105, CD54HCT40105, CD74HCT40105
Test Circuits and Waveforms
(Continued)
trCL
tfCL
trCL
VCC
90%
CLOCK
INPUT
GND
tH(H)
3V
2.7V
CLOCK
INPUT
50%
10%
tfCL
1.3V
0.3V
GND
tH(H)
tH(L)
VCC
DATA
INPUT
3V
DATA
INPUT
50%
tH(L)
1.3V
1.3V
1.3V
GND
tSU(H)
tSU(H)
tSU(L)
tTLH
tTHL
90%
50%
10%
90%
OUTPUT
tREM
VCC
SET, RESET
OR PRESET
tTLH
OUTPUT
tREM
3V
SET, RESET
OR PRESET
GND
6ns
OUTPUT LOW
TO OFF
OUTPUT HIGH
TO OFF
50%
OUTPUTS
DISABLED
FIGURE 9. HC THREE-STATE PROPAGATION DELAY
WAVEFORM
OTHER
INPUTS
TIED HIGH
OR LOW
OUTPUT
DISABLE
IC WITH
THREESTATE
OUTPUT
GND
1.3V
tPZH
90%
OUTPUTS
ENABLED
OUTPUTS
ENABLED
0.3
10%
tPHZ
tPZH
90%
3V
tPZL
tPLZ
10%
OUTPUTS
ENABLED
6ns
2.7
1.3
GND
50%
tPHZ
tf
OUTPUT
DISABLE
tPZL
tPLZ
OUTPUT HIGH
TO OFF
6ns
tr
VCC
10%
CL
50pF
FIGURE 8. HCT SETUP TIMES, HOLD TIMES, REMOVAL TIME,
AND PROPAGATION DELAY TIMES FOR EDGE
TRIGGERED SEQUENTIAL LOGIC CIRCUITS
6ns
OUTPUT LOW
TO OFF
GND
IC
90%
50%
tPHL
1.3V
CL
50pF
FIGURE 7. HC SETUP TIMES, HOLD TIMES, REMOVAL TIME,
AND PROPAGATION DELAY TIMES FOR EDGE
TRIGGERED SEQUENTIAL LOGIC CIRCUITS
OUTPUT
DISABLE
1.3V
10%
tPLH
50%
IC
tTHL
90%
90%
1.3V
tPHL
tPLH
GND
tSU(L)
1.3V
OUTPUTS
DISABLED
OUTPUTS
ENABLED
FIGURE 10. HCT THREE-STATE PROPAGATION DELAY
WAVEFORM
OUTPUT
RL = 1kΩ
CL
50pF
VCC FOR tPLZ AND tPZL
GND FOR tPHZ AND tPZH
NOTE: Open drain waveforms tPLZ and tPZL are the same as those for three-state shown on the left. The test circuit is Output RL = 1kΩ to
VCC, CL = 50pF.
FIGURE 11. HC AND HCT THREE-STATE PROPAGATION DELAY TEST CIRCUIT
11
CD54HC40105, CD74HC40105, CD54HCT40105, CD74HCT40105
DATA OUT
READY
SHIFT IN
SI DOR
Q0
D0
SI DOR
Q0
D0
D1
Q1
D1
Q1
D2
Q2
D2
Q2
D3 MR Q3
DIR SO
D3 MR Q3
DIR SO
8-BIT
DATA
8-BIT
DATA
SI DOR
Q0
D0
SI DOR
Q0
D0
D1
Q1
D1
Q1
D2
Q2
D2
Q2
D3 MR Q3
DIR SO
D3 MR Q3
DIR SO
SHIFT OUT
DATA IN READY
MASTER RESET
(NOTE)
NOTE: Pulse must be applied for cascading by 16 N bits.
FIGURE 12. EXPANSION, 8-BITS WIDE BY 16 N-BITS LONG USING HC/HCT40105
12
CD54HC40105, CD74HC40105, CD54HCT40105, CD74HCT40105
MASTER
RESET
SHIFT IN
(DATA VALID)
INPUTS
SHIFT-IN PULSES
HAVE NO EFFECT
≈180ns
(NOTE 6)
SHIFT OUT
SHIFT-OUT PULSES
HAVE NO EFFECT
OUTPUTS
≈180ns
(NOTE 7)
INPUT READY
(CLEAR OUT)
(NOTE 5)
OUTPUT READY
(DATA VALID)
INPUTS
DATA IN
(Db)
THREE-STATE
(OUTPUT
ENABLE)
DATA OUT
(NOTE 5)
1 0
1 1
1 0 0 1 1 0
10 1 0 1 0
(UNKNOWN)
HIGH Z
1
0 1 1
1
0
INVALID
NOTES:
5. Data valid goes to high level in advance of the data out by a maximum of 38ns at VCC = 4.5V for CL = 50pF and TA = 25oC.
6. At VCC = 4.5V, ripple time from position 1 to position 16.
7. At VCC = 4.5V, ripple time from position 16 to position 1.
FIGURE 13. TIMING DIAGRAM FOR THE CD74HC/HCT40105
13
PACKAGE OPTION ADDENDUM
www.ti.com
23-Apr-2007
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
Lead/Ball Finish
MSL Peak Temp (3)
CD54HC40105F3A
ACTIVE
CDIP
J
16
1
TBD
A42 SNPB
N / A for Pkg Type
CD54HCT40105F3A
ACTIVE
CDIP
J
16
1
TBD
A42 SNPB
N / A for Pkg Type
CD74HC40105E
ACTIVE
PDIP
N
16
25
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
CD74HC40105EE4
ACTIVE
PDIP
N
16
25
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
CD74HC40105M
ACTIVE
SOIC
D
16
40
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HC40105M96
ACTIVE
SOIC
D
16
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HC40105M96E4
ACTIVE
SOIC
D
16
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HC40105M96G4
ACTIVE
SOIC
D
16
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HC40105ME4
ACTIVE
SOIC
D
16
40
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HC40105MG4
ACTIVE
SOIC
D
16
40
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HC40105MT
ACTIVE
SOIC
D
16
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HC40105MTE4
ACTIVE
SOIC
D
16
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HC40105MTG4
ACTIVE
SOIC
D
16
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HCT40105E
ACTIVE
PDIP
N
16
25
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
CD74HCT40105EE4
ACTIVE
PDIP
N
16
25
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
CD74HCT40105M
ACTIVE
SOIC
D
16
40
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HCT40105M96
ACTIVE
SOIC
D
16
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HCT40105M96E4
ACTIVE
SOIC
D
16
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HCT40105M96G4
ACTIVE
SOIC
D
16
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HCT40105ME4
ACTIVE
SOIC
D
16
40
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HCT40105MG4
ACTIVE
SOIC
D
16
40
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HCT40105MT
ACTIVE
SOIC
D
16
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HCT40105MTE4
ACTIVE
SOIC
D
16
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HCT40105MTG4
ACTIVE
SOIC
D
16
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
23-Apr-2007
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
22-Sep-2007
TAPE AND REEL BOX INFORMATION
Device
Package Pins
Site
Reel
Diameter
(mm)
Reel
Width
(mm)
A0 (mm)
B0 (mm)
K0 (mm)
P1
(mm)
W
Pin1
(mm) Quadrant
CD74HC40105M96
D
16
SITE 27
330
16
6.5
10.3
2.1
8
16
Q1
CD74HCT40105M96
D
16
SITE 27
330
16
6.5
10.3
2.1
8
16
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
22-Sep-2007
Device
Package
Pins
Site
Length (mm)
Width (mm)
Height (mm)
CD74HC40105M96
D
16
SITE 27
342.9
336.6
0.0
CD74HCT40105M96
D
16
SITE 27
342.9
336.6
0.0
Pack Materials-Page 2
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