BLF369 VHF power LDMOS transistor Rev. 02 — 8 December 2006 Objective data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF Power transistor for broadcast transmitter applications and industrial applications in the HF/VHF band. Table 1. Typical performance Typical RF performance at VDS = 32 V and Th = 25 °C in a common-source 225 MHz test circuit.[1] Mode of operation f PL PL(PEP) Gp ηD IMD3 (MHz) (W) (W) (dB) (%) (dBc) CW, class AB 225 500 - 18 60 - 2-tone, class AB f1 = 225; f2 = 225.1 - 500 19 47 −28 [1] Th is the heatsink temperature. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features n Typical CW performance at 225 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 1.0 A: u Load power PL = 500 W u Power gain Gp ≥ 18 dB u Drain efficiency ηD = 60 % n Advanced flange material for optimum thermal behavior and reliability n Excellent ruggedness n High power gain n Designed for broadband operation (HF/VHF band) n Source on underside eliminates DC isolators, reducing common-mode inductance n Easy power control n Integrated ESD protection 1.3 Applications n Communication transmitter applications in the UHF band n Industrial applications in the UHF band BLF369 NXP Semiconductors VHF power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description 1 drain1 2 drain2 3 gate1 4 gate2 5 Simplified outline 1 Symbol 1 2 5 3 5 [1] source 3 4 4 2 sym117 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number BLF369 Package Name Description Version - flanged LDMOST ceramic package; 2 mounting holes; SOT800-2 4 leads 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS Conditions Min Max Unit drain-source voltage - 65 V VGS gate-source voltage −0.5 +13 V Tstg storage temperature −65 +150 °C Tj junction temperature - 200 °C 5. Thermal characteristics Table 5. Symbol Thermal characteristics Parameter Conditions Typ Unit Tj = 200 °C [1][2] Rth(j-case) thermal resistance from junction to case 0.26 K/W thermal resistance from junction to heatsink Tj = 200 °C [1][2][3] Rth(j-h) 0.35 K/W [1] Tj is the junction temperature. [2] Rth(j-case) and Rth(j-h) are measured under RF conditions. [3] Rth(j-h) is dependent on the applied thermal compound and clamping/mounting of the device. BLF369_2 Objective data sheet © NXP B.V. 2006. All rights reserved. Rev. 02 — 8 December 2006 2 of 13 BLF369 NXP Semiconductors VHF power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions[1] Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 6 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 20 V; ID = 600 mA 4 - 5.5 V IDSS drain leakage current VGS = 0 V; VDS = 32 V - - 4.2 µA IDSX drain cut-off current VGS = VGS(th) + 9 V; VDS = 10 V - 100 - A IGSS gate leakage current VGS = 20 V; VDS = 0 V - - 60 nA gfs forward transconductance VGS = 20 V; ID = 13 A - 15 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 9 V; ID = 13 A - 40 - mΩ Ciss input capacitance VGS = 0 V; VDS = 32 V; f = 1 MHz [2] - 400 - pF [2] - 230 - pF - 15 - pF Coss output capacitance VGS = 0 V; VDS = 32 V; f = 1 MHz Crss reverse transfer capacitance VGS = 0 V; VDS = 32 V; f = 1 MHz [1] ID is the drain current. [2] Ciss and Coss include reverse transfer capacitance (Crss). 001aae484 600 Coss (pF) 400 200 0 0 10 20 30 40 50 VDS (V) VGS = 0 V; f = 1 MHz. Fig 1. Output capacitance Coss as a function of drain-source voltage VDS; typical values per section 7. Application information Table 7. RF performance in a common-source 225 MHz test circuit Th = 25 °C unless otherwise specified. Mode of operation f (MHz) 2-tone, class AB f1 = 225; f2 = 225.1 VDS IDq PL(PEP) Gp (V) (A) (W) (dB) 32 2 × 1.0 500 > 18 BLF369_2 Objective data sheet ηD IMD3 ∆Gp (%) (dBc) (dB) > 43 < −24 1 © NXP B.V. 2006. All rights reserved. Rev. 02 — 8 December 2006 3 of 13 BLF369 NXP Semiconductors VHF power LDMOS transistor 001aae501 22 70 ηD (%) GP (dB) ηD 20 50 GP 18 30 16 0 100 200 10 400 500 PL (W) 300 VDS = 32 V; f = 225 MHz; IDq = 2 × 1.0 A; Th = 25 °C. Fig 2. CW power gain Gp and drain efficiency ηD as a function of output power PL; typical values 001aae502 22 60 ηD (%) GP (dB) ηD 20 001aae503 0 IMD3 (dBc) 40 −20 20 −40 GP 18 16 0 200 0 600 400 −60 0 PL(PEP) (W) VDS = 32 V; f1 = 225 MHz; f2 = 225.1 MHz; IDq = 2 × 1.0 A; Th = 25 °C. 200 400 600 PL(PEP) (W) VDS = 32 V; f1 = 225 MHz; f2 = 225.1 MHz; IDq = 2 × 1.0 A; Th = 25 °C. Fig 3. 2-Tone power gain Gp and drain efficiency ηD as a function of peak envelope power PL(PEP); typical values Fig 4. 2-Tone third order intermodulation distortion IMD3 as a function of peak envelope power PL(PEP); typical values 7.1 Ruggedness in class-AB operation The BLF369 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 32 V; f = 225 MHz at rated load power (PL(PEP) = 500 W). BLF369_2 Objective data sheet © NXP B.V. 2006. All rights reserved. Rev. 02 — 8 December 2006 4 of 13 BLF369 NXP Semiconductors VHF power LDMOS transistor 7.2 Reliability 001aae504 106 Years 105 (1) (2) (3) (4) (5) (6) 104 103 102 (7) 10 (8) (9) (10) (11) 1 0 6 12 18 24 30 Idc (A) TTF; 0.1 % failure fraction; best estimate values. (1) Tj = 100 °C (2) Tj = 110 °C (3) Tj = 120 °C (4) Tj = 130 °C (5) Tj = 140 °C (6) Tj = 150 °C (7) Tj = 160 °C (8) Tj = 170 °C (9) Tj = 180 °C (10) Tj = 190 °C (11) Tj = 200 °C Fig 5. BLF369 electromigration (ID, total device) 8. Test information Table 8. List of components For test circuit, see Figure 6, 7 and 8. Component Description Value Remarks B1 semi rigid coax 25 Ω; 120 mm EZ90-25-TP B2 semi rigid coax 25 Ω; 56 mm EZ90-25-TP C1 multilayer ceramic chip capacitor 91 pF [1] C2, C3 multilayer ceramic chip capacitor 56 pF [1] C4, C7 multilayer ceramic chip capacitor 100 pF [1] C5, C8 ceramic capacitor 15 nF C6, C9 electrolytic capacitor 220 µF C10, C11, C13, C14 multilayer ceramic chip capacitor 220 pF [1] C12, C15 ceramic capacitor 15 nF [1] BLF369_2 Objective data sheet © NXP B.V. 2006. All rights reserved. Rev. 02 — 8 December 2006 5 of 13 BLF369 NXP Semiconductors VHF power LDMOS transistor Table 8. List of components …continued For test circuit, see Figure 6, 7 and 8. Component Description Value Remarks C20 multilayer ceramic chip capacitor 100 pF [1] C21 multilayer ceramic chip capacitor 20 pF [1] C22, C25 multilayer ceramic chip capacitor 100 pF [1] C23, C26 ceramic capacitor 15 nF C24, C27 electrolytic capacitor 10 µF C28, C31 multilayer ceramic chip capacitor 100 pF C29, C32 multilayer ceramic chip capacitor 220 pF C30, C33 ceramic capacitor 15 nF L1, L3 stripline L2, L4 air coil [1] [2] (W × L) 12 mm × 15 mm 4 windings; D = 8 mm; d = 1 mm [2] (W × L) 14 mm × 15 mm L5, L6 stripline R1, R2, R3, R4 resistor 0.25 W; 4 Ω R5, R6, R8, R9 resistor 0.25 W; 10 Ω R7, R10 potentiometer 10 kΩ R11, R12 resistor 0.25 W; 1 Ω T1, T2 semi rigid coax 25 Ω; 68 mm EZ90-25-TP T3, T4 semi rigid coax 25 Ω; 60 mm EZ90-25-TP [1] American technical ceramics type 100B or capacitor of same quality. [2] PCB: Rogers 5880; εr = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper plating = 35 µm. BLF369_2 Objective data sheet © NXP B.V. 2006. All rights reserved. Rev. 02 — 8 December 2006 6 of 13 xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx NXP Semiconductors BLF369_2 Objective data sheet + VG1(test) + VD1(test) C24 R7 C23 C5 C22 C4 R5 C30 Rev. 02 — 8 December 2006 R11 R6 C12 L2 L5 C29 L1 T3 C28 50 Ω C6 C10 T1 C11 R1 R2 C2 B2 B1 T4 C31 R12 C33 C32 C21 C20 C1 L3 L6 T2 50 Ω C3 C13 C14 R3 R4 C15 R8 L4 R9 C25 C7 C26 C8 C27 + VG2(test) + VD2(test) BLF369 7 of 13 © NXP B.V. 2006. All rights reserved. Fig 6. Class-AB common-source 225 MHz test circuit; VD1(test), VD2(test), VG1(test) and VG2(test) are drain and gate test voltages 001aae535 VHF power LDMOS transistor C9 R10 xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx NXP Semiconductors BLF369_2 Objective data sheet Rev. 02 — 8 December 2006 80 mm 95 mm 001aae536 BLF369 VHF power LDMOS transistor 8 of 13 © NXP B.V. 2006. All rights reserved. Fig 7. Printed-Circuit Board (PCB) for class-AB 225 MHz test circuit 95 mm xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx NXP Semiconductors BLF369_2 Objective data sheet R7 C24 C4 C23 C6 C5 C22 + + + VG1(test) R5 L2 R6 C12 + VD1(test) R1 B1 C30 T3 Rev. 02 — 8 December 2006 L5 R2 C10 T1 R11 C28 C2 C14 C3 C21 C20 C1 BLF 369 C31 C11 L1 C29 C32 L3 R12 B2 T2 L6 T4 R3 C33 R8 R9 L4 C13 R4 + VD2(test) C15 + VG2(test) C26 C25 + + C7 C27 C8 R10 C9 001aae537 BLF369 Fig 8. Component layout for class-AB 225 MHz test circuit VHF power LDMOS transistor 9 of 13 © NXP B.V. 2006. All rights reserved. C1 mounted on top of transformers T1 and T2; C20 mounted on top of transformers T3 and T4 BLF369 NXP Semiconductors VHF power LDMOS transistor 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 4 leads SOT800-2 D A F y D1 U1 B q C 1 c w1 M A 2 H U2 M B M E P E1 5 L 3 4 A b w2 M C Q M e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 E E1 e F H L p Q q U1 U2 w1 w2 y mm 6.3 5.9 10.55 10.45 0.15 0.10 30.5 29.9 31.1 30.9 14.6 14.4 15.3 15.1 12.7 2.26 2.00 22.8 21.8 3.7 3.3 3.56 3.49 3.1 2.8 38.5 44.5 44.2 15.4 15.0 0.25 0.25 0.05 0.248 0.415 0.006 1.201 1.224 0.575 0.602 0.232 0.411 0.004 1.177 1.216 0.567 0.594 0.5 0.089 0.898 0.146 0.140 0.122 1.752 0.606 1.516 0.079 0.858 0.130 0.137 0.110 1.740 0.591 0.01 0.01 0.002 inches OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 05-06-02 05-06-07 SOT800-2 Fig 9. Package outline SOT800-2 BLF369_2 Objective data sheet © NXP B.V. 2006. All rights reserved. Rev. 02 — 8 December 2006 10 of 13 BLF369 NXP Semiconductors VHF power LDMOS transistor 10. Abbreviations Table 9. Abbreviations Acronym Description CW Continuous Wave DC Direct Current GSM Global System for Mobile communications HF High Frequency LDMOS Laterally Diffused Metal Oxide Semiconductor LDMOST Laterally Diffused Metal Oxide Semiconductor Transistor PEP Peak Envelope Power RF Radio Frequency TTF Time To Failure VHF Very High Frequency VSWR Voltage Standing Wave Ratio 11. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF369_2 20061208 Objective data sheet - BLF369_1 BLF369_1 20060413 Objective data sheet - - BLF369_2 Objective data sheet © NXP B.V. 2006. All rights reserved. Rev. 02 — 8 December 2006 11 of 13 BLF369 NXP Semiconductors VHF power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] BLF369_2 Objective data sheet © NXP B.V. 2006. All rights reserved. Rev. 02 — 8 December 2006 12 of 13 BLF369 NXP Semiconductors VHF power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 4 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2006. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 8 December 2006 Document identifier: BLF369_2