Chenmko BAS316PT Switching diode voltage 100 volts current 0.25 ampere Datasheet

CHENMKO ENTERPRISE CO.,LTD
BAS316PT
SURFACE MOUNT
SWITCHING DIODE
VOLTAGE 100 Volts CURRENT 0.25 Ampere
APPLICATION
* Ultra high speed switching
SC-76/SOD-323
FEATURE
* Small surface mounting type. (SC-76/SOD-323)
* High speed. (TRR=1.5nSec Typ.)
* Suitable for high packing density.
Cathode Band
* Maximum total power disspation is 225mW.
(1)
(2)
0.25~0.4
1.15~1.4
CONSTRUCTION
1.6~1.8
* Silicon epitaxial planar
MARKING
* Z9
0.6~1.0
0.08~0.177
0.25~0.45
0.1Max.
CIRCUIT
2.3~2.7
(2)
Dimensions in millimeters
(1)
SC-76/SOD-323
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )
SYMBOL
BAS316PT
UNITS
Maximum Recurrent Peak Reverse Voltage
RATINGS
VRRM
100
Volts
Maximum RMS Voltage
VRMS
70
Volts
Maximum DC Blocking Voltage
VDC
75
Volts
IO
0.25
Amps
Maximum Average Forward Rectified Current
Peak Forward Surge Current at 1uSec.
IFSM
4.0
Amps
Typical Junction Capacitance between Terminal (Note 1)
CJ
4.0
pF
Maximum Reverse Recovery Time (Note 2)
TRR
4.0
nSec
TJ
+150
o
C
-55 to +150
o
C
Maximum Operating Temperature Range
Storage Temperature Range
TSTG
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
CHARACTERISTICS
IF= 1mA
10mA
Maximum Instantaneous Forward Voltage at IIF=
F= 50mA
IF= 150mA
Maximum Average Reverse Current at
VR= 25V
VR= 75V
SYMBOL
VF
IR
NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 0 volts.
2. Measured at applied froward current of 10mA and reverse voltage of 6.0 volts.
3. ESD sensitive product handling required.
BAS316PT
0.715
0.855
1.0
1.25
0.03
1.0
UNITS
Volts
uAmps
2004-9
RATING CHARACTERISTIC CURVES ( BAS316PT )
FIG. 2 - FORWARD CHARACTERISiTICS
1.0
-25 o
C
100u
25 o
C
75 o
C
25
1m
o
50
10m
C
75
100m
5
100
12
FORWARD CURRENT, (A)
AVERAGE FORWARD CURRENT, (%)
FIG. 1 - TYPICAL FORWARD CURRENT
DERATING CURRENT
125
10u
0
25
0
50
75
100
125
150
0
0.2
0.4
AMBIENT TEMPERATURE, (oC)
0.6
0.8
1.0
1.2
1.4
FORWARD VOLTAGE, (V)
FIG. 3 - REVERSE CHARACTERISTICS
FIG. 4 - TYPICAL JUNCTION CAPACITANCE
REVERSE CURRENT, (nA)
Ta= 100oC
75oC
100
50oC
10
25oC
0oC
1
-
25oC
0.1
0.01
JUNCTION CAPACITANCE, (pF)
1000
f=1MHz
4
2
0
0
20
40
60
80
100
0
2
4
REVERSE VOLTAGE, (V)
8
10
12
14
16
18
FIG. 6 - REVERSE RECOVERY TIME MEASUREMENT CIRCUIT
FIG. 5 - REVERSE RECOVERY TIME
10
REVERSE RECOVERY TIME, (nS)
6
REVERSE VOLTAGE, (V)
0.01µF
D.U.T.
VR=6V
9
8
5
7
PULSE GENERATOR
OUTPUT 50
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
FORWARD CURRENT, (mA)
8
9
10
50
SAMPLING
OSCILLOSCOPE
20
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