, U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BUX47A Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage: VcEoisusr 450V (Min) • Fast Switching Speed APPLICATIONS Designed for high voltage, fast switching applications. i I Absolute maximum ratings(Ta=25t:) I SYMBOL PARAMETER Collector-Emitter Voltage VCER VALUE UNIT 1000 V PIN 1.BASE Y 2- k* 3.COU.ECTOR(CASE) .! VCES Collector-Emitter Voltage (VBE= 0) 900 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V EMITTER TO-3 package (TO-3) 39.5(nax. 20.6 £ max, h— (.an)—H Collector Current-Continuous Ic 9 f 1 A _i Collector Current-Peak tp< 5ms ICM 15 A Base Current-Continuous 8 A IBM Base Current-peak tp< 5ms 10 A PC Collector Power Dissipation @TC=25"C 125 W TI Junction Temperature 175 •c -65-175 •c IB Storage Temperature Range Tsig Rth j-c PARAMETER Thermal Resistance, Junction to Case 1 1.10±O2 1 (M3) n "~ /^, -H^ \ isa 1 l 1 ' . -J U-t 4(6+Oii 1 *p-0.16 (.158) . JS? «i 3= • 2S =3 ^\ 1? «1 ^X^'^./' o ^ " $02? a\ (1.189) THERMAL CHARACTERISTICS SYMBOL 1~ • oS MAX 1.2 UNIT r/w COLLECTOR iS TO THE CASE CONNECTED NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors Silicon NPN Power Transistor BUX47A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise specified SYMBOL PARAMETER CONDITIONS VcEO(SUS) Collector-Emitter Sustaining Voltage lc= 0.2A; IB= 0; L= 25mH V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; I0= 0 VcE(sat)-1 Collector-Emitter Saturation Voltage VcE(sat)-2 MIN MAX 450 7 UNIT V 30 V lc= 5A; IB= 1A 1.5 V Collector-Emitter Saturation Voltage lc= 8A; IB= 2.5A 3.0 V Base-Emitter Saturation Voltage lc= 5A; IB= 1A 1.6 V ICER Collector Cutoff Current VCE=850V; RBE= 10 Q VCE=850V; RBE= 10Q;T c =125r 0.4 3 mA ICEV Collector Cutoff Current VCE=850V; VBE= -2.5V Vce=850V; VBE= -2.5V; TC=125°C 0.15 1.5 mA IFBO Emitter Cutoff Current VEB= 5V; lc= 0 1.0 mA 0.7 us 3.0 us 0.8 |J S VBE(sat) Switching times Resistive Load ton Turn-on Time ts Storage Time tf Fall Time lc= 5A; I81=-IB2= 1A; Vcc= 150V