Central CSDD-25N Silicon controlled rectifier 25 amp, 600 thru 800 volt Datasheet

Central
CSDD-25M
CSDD-25N
TM
Semiconductor Corp.
SILICON CONTROLLED RECTIFIER
25 AMP, 600 THRU 800 VOLTS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CSDD-25M
series type is an Epoxy Molded Silicon Controlled
Rectifier designed for sensing circuit applications
and control systems.
MARKING CODE: FULL PART NUMBER
D2PAK CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
CSDD
-25M
CSDD
-25N
UNITS
600
V
Peak Repetitive Off-State Voltage
VDRM, VRRM
RMS On-State Current (TC=90°C)
IT(RMS)
25
A
Peak One Cycle Surge (t=10ms)
ITSM
250
A
I2t Value for Fusing (t=10ms)
I 2t
310
A 2s
Peak Gate Power (tp=10µs)
40
W
1.0
W
Peak Forward Gate Current (tp=10µs)
PGM
PG (AV)
IFGM
4.0
A
Peak Forward Gate Voltage (tp=10µs)
VFGM
16
V
Average Gate Power Dissipation
400
Peak Reverse Gate Voltage (tp=10µs)
VRGM
5.0
V
Critical Rate of Rise of On-State Current
di/dt
100
A/µs
Storage Temperature
Tstg
TJ
-40 to +150
°C
Junction Temperature
-40 to +125
°C
Thermal Resistance
ΘJA
60
°C/W
Thermal Resistance
ΘJC
1.3
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IDRM, IRRM
IDRM, IRRM
IGT
Rated VDRM, VRRM
10
µA
Rated VDRM, VRRM, TC=125°C
VD=12V, RL=10Ω
4.0
mA
30
mA
IH
VGT
VTM
IT=100mA
VD=12V, RL=10Ω
ITM=50A, tp=380µs
12.5
50
mA
0.65
1.50
V
1.80
V
dv/dt
VD=2 /3 VDRM, TC=125°C
4.2
200
V/µs
R0 (15-June 2004)
Central
TM
CSDD-25M
CSDD-25N
Semiconductor Corp.
SILICON CONTROLLED RECTIFIER
25 AMP, 600 THRU 800 VOLTS
D2PAK CASE - MECHANICAL OUTLINE
LEAD CODE:
1) CATHODE
2) ANODE
3) GATE
4) ANODE
MARKING CODE:
FULL PART NUMBER
DIMENSIONS
INCHES
MILLIMETERS
SYMBOL MIN
MAX
MIN
MAX
A
0.163 0.189 4.14
4.80
B
0.045 0.055 1.14
1.40
C
0.000 0.010 0.00
0.25
D
0.012 0.028 0.30
0.70
E
0.386 0.409 9.80 10.40
F
0.378 0.417 9.60 10.60
G
0.335 0.358 8.50
9.10
H
0.197 0.236 5.00
6.00
J
0.093 0.108 2.35
2.75
K
0.030 0.035 0.75
0.90
D2PAK (REV: R2)
R0 (15-June 2004)
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