ISC BD712 Silicon pnp power transistor Datasheet

Inchange Semiconductor
Product Specification
BD708 BD710 BD712
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220C package
·Complement to type BD707/709/711
APPLICATIONS
·Intented for use in power linear
and switching applications.
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
BD708
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
BD710
Open emitter
Emitter-base voltage
IC
-80
BD712
-100
BD708
-60
BD710
UNIT
-60
Open base
BD712
VEBO
VALUE
-80
V
V
-100
Open collector
-5
V
Collector current-DC
-12
A
ICM
Collector current-Pulse
-18
A
IB
Base current
-5
A
PT
Total dissipation
75
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
MAX
UNIT
1.67
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
BD708 BD710 BD712
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD708
VCEO(SUS)
Collector-emitter
sustaining voltage
BD710
VBE
ICBO
ICEO
IC=-0.1A, IB=0
UNIT
V
-100
Collector-emitter saturation voltage
IC=-4A ,IB=-0.4A
-1.0
V
Base-emitter voltage
IC=-4A , VCE=-4V
-1.5
V
BD708
VCB=-60V, IE=0
TC=150℃
-0.1
-1.0
BD710
VCB=-80V, IE=0
TC=150℃
-0.1
-1.0
BD712
VCB=-100V, IE=0
TC=150℃
-0.1
-1.0
BD708
VCE=-30V, IB=0
BD710
VCE=-40V, IB=0
BD712
VCE=-50V, IB=0
Collector cut-off current
Collector cut-off current
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-0.5A ; VCE=-2V
40
hFE-2
DC current gain only for BD708
IC=-2A ; VCE=-2V
30
hFE-3
DC current gain
IC=-4A ; VCE=-4V
15
BD708
DC current gain
BD710
5
IC=-10A ; VCE=-4V
Transition frequency
120
mA
-0.1
mA
-1.0
mA
400
150
10
8
BD712
fT
MAX
-80
IEBO
hFE-4
TYP.
-60
BD712
VCEsat
MIN
8
IC=-0.3A;VCE=-3V;
2
3
MHz
Inchange Semiconductor
Product Specification
BD708 BD710 BD712
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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