Features • No External Components Except PIN Diode • Supply-voltage Range: 4.5V to 5.5V • High Sensitivity Due to Automatic Sensitivity Adaption (AGC) and Automatic Strong Signal Adaption (ATC) • High Immunity Against Disturbances from Daylight and Lamps • Small Size and Innovative Pad Layout • Available for Carrier Frequencies between 33 kHz to 40 kHz; Adjusted by Zener Diode Fusing • TTL and CMOS Compatible • Suitable Minimum Burst Length ≥ 10 Pulses/Burst IR Receiver ASSP Applications • Home Entertainment Applications • Home Appliances • Remote Control Equipment ATA2525 1. Description The IC ATA2525 is a complete IR receiver for data communication that was developed and optimized for use in carrier-frequency-modulated transmission applications. The IC combines small size with high sensitivity as well as high suppression of noise from daylight and lamps. An innovative and patented pad layout offers unique flexibility for assembly of IR receiver modules. The ATA2525 is available with standard carrier frequencies (33, 36, 37, 38, 40 kHz) and 3 different noise suppression regulation types (standard, lamp, noise) covering requirements of different high-volume remote control solutions (please refer to selection guide available for ATA2525/ATA2526). The ATA2525 operates in a supply voltage range of 4.5V to 5.5V. The function of ATA2525 can be described using the block diagram (see Figure 1-1 on page 2). The input stage meets two main functions. First, it provides a suitable bias voltage for the PIN diode. Secondly, the pulsed photo-current signals are transformed into a voltage by a special circuit which is optimized for low-noise applications. After amplification by a Controlled Gain Amplifier (CGA), the signals have to pass a tuned integrated narrow bandpass filter with a center frequency f0 which is equivalent to the chosen carrier frequency of the input signal. The demodulator is used to convert the input burst signal into a digital envelope output pulse and to evaluate the signal information quality, i.e., unwanted pulses will be suppressed at the output pin. All this is done by means of an integrated dynamic feedback circuit which varies the gain as a function of the present environmental condition (ambient light, modulated lamps etc.). Other special features are used to adapt to the current application to secure best transmission quality. 4854E–AUTO–10/06 Figure 1-1. Block Diagram VS IN Input CGA and filter OUT Demodulator Microcontroller AGC/ATC and digital control Oscillator Carrier frequency f0 ATA2525 Modulated IR signal min 10 pulses 2 GND ATA2525 4854E–AUTO–10/06 ATA2525 2. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameters Symbol Value Unit Supply voltage VS –0.3 to +6 V Supply current IS 3 mA VIN –0.3 to VS V Input voltage Input DC current at VS = 5V IIN 0.75 mA Output voltage VO –0.3 to VS V Output current IO 10 mA Operating temperature Tamb –25 to +85 °C Storage temperature Tstg –40 to +125 °C Power dissipation at Tamb = 25°C Ptot 30 mW Symbol Value Unit RthJA 110 K/W 3. Thermal Resistance Parameter Junction ambient TSSOP8 4. Electrical Characteristics Tamb = –25°C to +85°C, VS = 4.5V to 5.5V unless otherwise specified. No. 1 Parameters Pin Symbol Min. Typ. Max. Unit Type* 1 VS 4.5 5 5.5 V C 1 IS 0.8 1.1 1.4 mA B kΩ A 250 mV B VS V A mA B µA C µA B Supply 1.1 Supply-voltage range 1.2 Supply current 2 Test Conditions IIN = 0 Output 2.1 Internal pull-up resistor Tamb = 25°C; see Figure 6-7 on page 8 1,3 RPU 2.2 Output voltage low IL = 2 mA; see Figure 6-7 on page 8 3,6 VOL 2.3 Output voltage high Tamb = 25°C 3,1 VOH 2.4 Output current clamping R2 = 0; see Figure 6-7 on page 8 3,6 IOCL 3 40 VS – 0.25 8 Input 3.1 Input DC current VIN = 0; see Figure 6-7 on page 8 5 IIN_DCMAX –85 3.2 Input DC current; Figure 6-1 on page 5 VIN = 0; Vs = 5V, Tamb = 25°C 5 IIN_DCMAX –530 –960 *) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. BER = Bit Error Rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT 2. After transformation of input current into voltage 3 4854E–AUTO–10/06 4. Electrical Characteristics (Continued) Tamb = –25°C to +85°C, VS = 4.5V to 5.5V unless otherwise specified. No. Pin Symbol 3.3 Minimum detection threshold current; Figure 6-2 on page 5 Test signal: see Figure 6-6 on page 7 VS = 5V, Tamb = 25°C, IIN_DC = 1 µA; square pp, burst N = 16, f = f0; tPER = 10 ms, Figure 6-6 on page 7; BER = 50(1) 3 IEemin 3.4 Test signal: see Figure 6-6 on page 7 VS = 5V, Minimum detection Tamb = 25°C, threshold current with I = 1 µA, AC current disturbance IN_DC square pp, IIN_AC100 = 3 µA at burst N = 16, 100 Hz f = f0; tPER = 10 ms, Figure 6-6 on page 7; BER = 50%(1) 3 IEemin 3.5 Test signal: see Figure 6-6 on page 7 VS = 5V, Tamb = 25°C, IIN_DC = 1 µA; square pp, burst N = 16, f = f0; tPER = 10 ms, Figure 6-6 on page 7; BER = 5%(1) 3 IEemax 4 Parameters Test Conditions Maximum detection threshold current Min. Typ. Max. Unit Type* –600 pA B –850 pA C µA D –400 Controlled Amplifier and Filter 4.1 Maximum value of variable gain (CGA) VS = 5V, Tamb = 25°C GVARMAX 51 dB D 4.2 Minimum value of variable gain (CGA) VS = 5V, Tamb = 25°C GVARMIN –5 dB D 4.3 Total internal amplification(2) VS = 5V, Tamb = 25°C GMAX 71 dB D 4.4 Center frequency fusing VS = 5V, Tamb = 25°C accuracy of bandpass 4.5 Overall accuracy center frequency of bandpass 4.6 BPF bandwidth –3 dB; f0 = 38 kHz; see Figure 6-4 on page 6 f0_FUSE –3 f0 +3 % A f0 –6.7 f0 +4.1 % C kHz B B 3.5 *) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. BER = Bit Error Rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT 2. After transformation of input current into voltage 4 ATA2525 4854E–AUTO–10/06 ATA2525 5. Reliability Electrical qualification (1000h at 150°C) in molded SO8 plastic package 6. Typical Electrical Curves at Tamb = 25°C Figure 6-1. VIN versus IIN_DC, VS = 5V 3 2.94 2.79 2.44 VIN (V) 2 1 1.14 0 0.0 0.1 1.0 10.0 100.0 1000.0 IIN_DC (µA) Figure 6-2. IEemin versus IIN_DC, VS = 5V IEemin (nA) 100 10 3.6 1 1.2 0.49 0 0.1 1.0 10.0 100.0 1000.0 IIN_DC (µA) 5 4854E–AUTO–10/06 Figure 6-3. Data Transmission Rate, VS = 5V 1750 1418 Standard type 1500 1119 1250 Bits/s 1493 Lamp type 1000 735 980 693 750 500 931 730 Noise type 547 250 0 28 32 36 40 44 f0 (kHz) Figure 6-4. Typical Bandpass Curve 1.1 Relative Amplitude 1.0 0.9 0.8 -3 dB -3 dB 0.7 0.6 0.5 ∆f 0.4 0.92 0.94 0.96 0.98 1.00 1.02 1.04 1.06 1.08 f/f0 Q = f0/∆f; ∆f = –3 dB values. Example: Q = 1/(1.047 – 0.954) = 11 6 ATA2525 4854E–AUTO–10/06 ATA2525 Figure 6-5. Illustration of Used Terms 1066 µs Period (P = 16) Burst (N = 16 pulses) 533 µs IN 1 7 16 7 7 33 µs t DON OUT t DOFF 533 µs Envelope 16 Envelope 1 17056 µs/data word OUT Telegram pause Data word Data word t 17 ms TREP = 62 ms Example: f = 30 kHz, burst with 16 pulses, 16 periods Figure 6-6. Test Circuit IEe = ∆U1/400 kΩ ∆U1 1 nF V DD = 5V 400 kΩ R1 = 220Ω IIN_DC VS IIN IEe IPIN_AC100 20 kΩ IN 1 nF VPULSE ∆U2 OUT GND + I IN_DC = ∆U2/40 kΩ 20 kΩ f0 16 ATA2525 C1 = 4.7 µF DC + tPER = 10 ms 7 4854E–AUTO–10/06 Figure 6-7. Application Circuit (1) VDD = 5V optional R2(1) > 2.4 kΩ R1 = 220Ω RPU = 40 kΩ IS VS IOCL IN IIN ATA2525 IL OUT IN Microcontroller GND + IIN_DC 8 IEe C1 = 4.7 µF VIN VO C2(1) ≤ 470 pF ATA2525 4854E–AUTO–10/06 ATA2525 7. Chip Dimensions Figure 7-1. Chip Size in µm 990,960 GND 393,839 IN 603,828 scribe length OUT 224,495 ATA2525 47,72 VS Versioning Zapping 0,0 width Note: Pad coordinates are for lower left corner of the pad in µm from the origin 0,0 Dimensions Pad metallurgy Finish Note: Length inclusive scribe 1.04 mm Width inclusive scribe 1.11 mm Thickness 290µ ±5% Pads 80µ × 80µ Fusing pads 60µ × 60µ Material AlCu/AlSiTi(1) Thickness 0.8 µm Material Si3N4/SiO2(1) Thickness 0.7/0.3 µm 1. Value depends on manufacture location. 9 4854E–AUTO–10/06 8. Ordering Information Delivery: unsawn wafers (DDW) in box D(2) Extended Type Number Type (1) 1493 Standard type: high data rate (1) ATA2525R3xx -DDW 980 Lamp type: enhanced suppression of disturbances, secure data transmission ATA2525R5xx(1)-DDW 730 Noise type: best suppression of disturbances, low data rate ATA2525R1xx -DDW Notes: 1. xx means the used carrier frequency value (33, 36, 37, 38 or 40 kHz) 2. Maximum data transmission rate up to bits/s with f0 = 40 kHz, VS = 5V (see Figure 6-2 on page 5) 9. Pad Layout Figure 9-1. Pad Layout GND IN OUT ATA2525 VS Table 9-1. 10 Zapping Versioning Pin Description Symbol Function OUT Data output VS Supply voltage GND GND IN Input pin diode Zapping f0 adjust Versioning type adjust ATA2525 4854E–AUTO–10/06 ATA2525 10. Revision History Please note that the following page numbers referred to in this section refer to the specific revision mentioned, not to this document. Revision No. History 4854E-AUTO-10/06 • • • • • • • • 4854D-AUTO-04/06 • Put datasheet in a new template • Section 10 “Ordering Information” on page 10 changed Features on page 1 changed Applications on page 1 changed Section 1 “Description” on page 1 changed Section 2 “Pin Configuration” on page 2 deleted Section 4 “Electrical Characteristics” number 3.3 on page 4 changed Section 4 “Electrical Characteristics” number 3.4 on page 4 changed Section 6 “ESD” on page 5 deleted Section 10 “Ordering Information” on page 10 changed 11 4854E–AUTO–10/06 Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Regional Headquarters Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland Tel: (41) 26-426-5555 Fax: (41) 26-426-5500 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong Tel: (852) 2721-9778 Fax: (852) 2722-1369 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581 Atmel Operations Memory 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany Tel: (49) 71-31-67-0 Fax: (49) 71-31-67-2340 Microcontrollers 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 La Chantrerie BP 70602 44306 Nantes Cedex 3, France Tel: (33) 2-40-18-18-18 Fax: (33) 2-40-18-19-60 ASIC/ASSP/Smart Cards 1150 East Cheyenne Mtn. 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