BIPOLARICS, INC Part Number BMT1720B20 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Base, Class C Package Configuration • High Output Power 20 W @ 1.7 to 2.0 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 3200 mA t • High Gain GPE = 7.0 dB to 8.2 dB • High Reliability Gold Metallization Nitride Passivation • Diffused Ballast Resistors • BeO Package • Built-In Matching Network Absolute Maximum Ratings: for Broadband Operation PERFORMANCE DATA: • Electrical Characteristics (TA = 25oC) SYMBOL SYMBOL PARAMETERS VCBO Collector-Base Voltage 50 V VCEO VEBO IC Collector-Emitter Voltage Emitter-Base Voltage Collector Current (instantaneous) 28 3.5 3200 V V mA T Junction Temperature 200 J RATING TSTG Storage Temperature θJC Thermal Resistance PARAMETERS & CONDITIONS UNIT -65 to 200 6.5 MIN. TYP. UNITS o C o C C/W MAX. VCE =28V, I C = 3200 mA, Class C P1dB Power output at 1 dB compression: f = 1.7 GHz W 20 η Collector Efficiency Class C % 50 hFE Forward Current Transfer Ratio: VCB = 5V, IC = 100 mA COB PT Output Capacitance: Total Power Dissipation f = 1 MHz, I E = 0 10 60 pF 4.5 W 40 100 PAGE 2 BIPOLARICS, INC. Part Number BMT1720B20 SILICON MICROWAVE POWER TRANSISTOR PAGE 3 BIPOLARICS, INC. Part Number BMT1720B20 SILICON MICROWAVE POWER TRANSISTOR PAGE 4 BIPOLARICS, INC. Part Number BMT1720B20 SILICON MICROWAVE POWER TRANSISTOR PAGE 5 BIPOLARICS, INC. Part Number BMT1720B20 SILICON MICROWAVE POWER TRANSISTOR 25 Package: 0.250" 2 Lead Flange NOTES: (unless otherwise specified) in 1. Dimensions are (mm) 2. Tolerances: in .xxx = ± .005 mm .xx = ± .13 3. All dimensions nominal; subject to change without notice LEAD 25 Package 1 Emitter 2 Base 3 4 Collector Base BIPOLARICS, INC. 602 Charcot Ave. San Jose, CA 94538 Phone: (408) 456-0430 FAX: (408) 456-0431