RF D10040200PL1 Gaas/gan power doubler hybrid 45mhz to 1000mhz Datasheet

D10040200PL1
D10040200PL1
GaAs/GaN Power Doubler Hybrid
45MHz to 1000MHz
Package: SOT-115J
The D10040200PL1 is a Hybrid Power Doubler amplifier
module. The part employs GaAs pHEMT and GaN HEMT die
and is operated from 45MHz to 1000MHz. It provides high
output capability, excellent linearity, and superior return loss
performance with low noise and optimal reliability.
Features
■
Low Current
■
Excellent Linearity
■
Superior Return Loss Performance
■
Extremely Low Distortion
■
Optimal Reliability
■
Extremely Low Noise
■
Unconditionally Stable Under All
Terminations
■
High Output Capability
■
20.0dB Min. Gain at 1GHz
■
380mA Max. at 24VDC
Applications
■
45MHz to 1000MHz CATV
Amplifier Systems
Ordering Information
D10040200PL1
Box with 50 pieces
Absolute Maximum Ratings
Parameter
RF Input Voltage (single tone)
DC Supply Over-Voltage (5 minutes)
Rating
Unit
65
dBmV
30
V
Storage Temperature
-40 to +100
°C
Operating Mounting Base Temperature
-30 to +100
°C
Caution! ESD sensitive device.
RoHS (Restriction of Hazardous
Substances): Compliant per EU Directive
2011/65/EU.
Exceeding any one or a combination of the Absolute
Maximum Rating conditions may cause permanent
damage to the device. Extended application of Absolute
Maximum Rating conditions to the device may reduce
device reliability. Specified typical performance or
functional operation of the device under Absolute
Maximum Rating conditions is not implied.
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
®
DS131212
®
RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names,
trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.
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D10040200PL1
Nominal Operating Parameters
Specification
Parameter
Unit
Min
Typ
Condition
Max
V+ = 24V; TMB = 30°C; ZS = ZL = 75Ω
General Performance
18.5
19.0
19.5
dB
f = 45MHz
20.0
20.5
21.5
dB
f = 1000MHz
1.0
1.5
2.5
dB
f = 45MHz to 1000MHz
0.8
dB
f = 45MHz to 1000MHz (Peak to Valley)
20
dB
f = 45MHz to 320MHz
19
dB
f = 320MHz to 640MHz
18
dB
f = 640MHz to 870MHz
16
dB
f = 870MHz to 1000MHz
20
dB
f = 45MHz to 320MHz
19
dB
f = 320MHz to 640MHz
18
dB
f = 640MHz to 870MHz
17
dB
f = 870MHz to 1000MHz
f = 50MHz to 1000MHz
Power Gain
[1]
Slope
Flatness of Frequency Response
Input Return Loss
Output Return Loss
Noise Figure
Total Current Consumption (DC)
3.0
4.0
dB
370.0
380.0
mA
V+ = 24V; TMB = 30°C; ZS = ZL = 75Ω
Distortion Data 40MHz to 550MHz
CTB
-70
-67
dBc
XMOD
-65
-62
dBc
CSO
-71
-68
dBc
CIN
59
63
79 ch 7 dB tilted; V0 = 50dBmV at 550MHz, plus 75 digital channels
(-6dB offset)[2]
dB
1. The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency.
2. 79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +43dBmV to +50dBmV tilted output level, plus 75 digital channels, -6dB
offset relative to the equivalent analog carrier.
Composite Second Order (CSO) - The CSO parameter (both sum and difference products) is defined by the NCTA.
Composite Triple Beat (CTB) - The CTB parameter is defined by the NCTA.
Cross Modulation (XMOD) - Cross modulation (XMOD) is measured at baseband (selective voltmeter method), referenced to 100% modulation of the
carrier being tested.
Carrier to Intermodulation Noise (CIN) - The CIN parameter is defined by ANSI/SCTE 17 (Test Procedure for Carrier to Noise).
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
DS131212
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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D10040200PL1
Package Drawing (Dimensions in millimeters)
I
U
123 5 7 89
C
E
J
S
P
R
M
K
O
T
Q
øG
N
D
0
B
5 10mm
scale
H
L
F
A
Notes:
European
Projection
Pinning:
Pin
Name
1
Input
2-3
GND
4
5
+VB
6
Nominal
Min
Max
A
44,6 ± 0,2
44,4
44,8
B
13,6 ± 0,2
13,4
44,4
13,8
C
20,4 ± 0,5
19,9
20,9
D
8 ± 0,15
7,85
8,15
E
12,6 ± 0,15
12,45
12,75
F
38,1 ± 0,2
37,9
38,3
G
4 +0,2 / -0,05
3,95
4,2
H
4 ± 0,2
3,8
4,2
I
25,4 ± 0,2
25,2
25,6
J
UNC 6-32
-
-
K
4,2 ± 0,2
4,0
4,4
L
27,2 ± 0,2
27,0
27,4
M
11,6 ± 0,5
11,1
12,1
N
5,8 ± 0,4
5,4
6,2
O
0,25 ± 0,02
0,23
0,27
P
0,45 ± 0,03
0,42
0,48
Q
2,54 ± 0,3
2,24
2,84
R
2,54 ± 0,5
2,04
3,04
S
2,54 ± 0,25
2,29
2,79
7-8
GND
T
5,08 ± 0,25
4,83
5,33
9
Output
U
5,08 ± 0,25
4,83
5,33
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
DS131212
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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