D10040200PL1 D10040200PL1 GaAs/GaN Power Doubler Hybrid 45MHz to 1000MHz Package: SOT-115J The D10040200PL1 is a Hybrid Power Doubler amplifier module. The part employs GaAs pHEMT and GaN HEMT die and is operated from 45MHz to 1000MHz. It provides high output capability, excellent linearity, and superior return loss performance with low noise and optimal reliability. Features ■ Low Current ■ Excellent Linearity ■ Superior Return Loss Performance ■ Extremely Low Distortion ■ Optimal Reliability ■ Extremely Low Noise ■ Unconditionally Stable Under All Terminations ■ High Output Capability ■ 20.0dB Min. Gain at 1GHz ■ 380mA Max. at 24VDC Applications ■ 45MHz to 1000MHz CATV Amplifier Systems Ordering Information D10040200PL1 Box with 50 pieces Absolute Maximum Ratings Parameter RF Input Voltage (single tone) DC Supply Over-Voltage (5 minutes) Rating Unit 65 dBmV 30 V Storage Temperature -40 to +100 °C Operating Mounting Base Temperature -30 to +100 °C Caution! ESD sensitive device. RoHS (Restriction of Hazardous Substances): Compliant per EU Directive 2011/65/EU. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. ® DS131212 ® RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc. 1 of 3 D10040200PL1 Nominal Operating Parameters Specification Parameter Unit Min Typ Condition Max V+ = 24V; TMB = 30°C; ZS = ZL = 75Ω General Performance 18.5 19.0 19.5 dB f = 45MHz 20.0 20.5 21.5 dB f = 1000MHz 1.0 1.5 2.5 dB f = 45MHz to 1000MHz 0.8 dB f = 45MHz to 1000MHz (Peak to Valley) 20 dB f = 45MHz to 320MHz 19 dB f = 320MHz to 640MHz 18 dB f = 640MHz to 870MHz 16 dB f = 870MHz to 1000MHz 20 dB f = 45MHz to 320MHz 19 dB f = 320MHz to 640MHz 18 dB f = 640MHz to 870MHz 17 dB f = 870MHz to 1000MHz f = 50MHz to 1000MHz Power Gain [1] Slope Flatness of Frequency Response Input Return Loss Output Return Loss Noise Figure Total Current Consumption (DC) 3.0 4.0 dB 370.0 380.0 mA V+ = 24V; TMB = 30°C; ZS = ZL = 75Ω Distortion Data 40MHz to 550MHz CTB -70 -67 dBc XMOD -65 -62 dBc CSO -71 -68 dBc CIN 59 63 79 ch 7 dB tilted; V0 = 50dBmV at 550MHz, plus 75 digital channels (-6dB offset)[2] dB 1. The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency. 2. 79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +43dBmV to +50dBmV tilted output level, plus 75 digital channels, -6dB offset relative to the equivalent analog carrier. Composite Second Order (CSO) - The CSO parameter (both sum and difference products) is defined by the NCTA. Composite Triple Beat (CTB) - The CTB parameter is defined by the NCTA. Cross Modulation (XMOD) - Cross modulation (XMOD) is measured at baseband (selective voltmeter method), referenced to 100% modulation of the carrier being tested. Carrier to Intermodulation Noise (CIN) - The CIN parameter is defined by ANSI/SCTE 17 (Test Procedure for Carrier to Noise). RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131212 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 3 D10040200PL1 Package Drawing (Dimensions in millimeters) I U 123 5 7 89 C E J S P R M K O T Q øG N D 0 B 5 10mm scale H L F A Notes: European Projection Pinning: Pin Name 1 Input 2-3 GND 4 5 +VB 6 Nominal Min Max A 44,6 ± 0,2 44,4 44,8 B 13,6 ± 0,2 13,4 44,4 13,8 C 20,4 ± 0,5 19,9 20,9 D 8 ± 0,15 7,85 8,15 E 12,6 ± 0,15 12,45 12,75 F 38,1 ± 0,2 37,9 38,3 G 4 +0,2 / -0,05 3,95 4,2 H 4 ± 0,2 3,8 4,2 I 25,4 ± 0,2 25,2 25,6 J UNC 6-32 - - K 4,2 ± 0,2 4,0 4,4 L 27,2 ± 0,2 27,0 27,4 M 11,6 ± 0,5 11,1 12,1 N 5,8 ± 0,4 5,4 6,2 O 0,25 ± 0,02 0,23 0,27 P 0,45 ± 0,03 0,42 0,48 Q 2,54 ± 0,3 2,24 2,84 R 2,54 ± 0,5 2,04 3,04 S 2,54 ± 0,25 2,29 2,79 7-8 GND T 5,08 ± 0,25 4,83 5,33 9 Output U 5,08 ± 0,25 4,83 5,33 RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131212 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 3 of 3