LESHAN RADIO COMPANY, LTD. General Purpose Transistors 3 COLLECTOR 1 BASE PNP BCX17LT1 BCX18LT1 NPN BCX19LT1 BCX20LT1 3 COLLECTOR 1 BASE 2 EMITTER 2 EMITTER Voltage and current are negative for PNP transistors 3 MAXIMUM RATINGS Value Rating Symbol 1 BCX17LT1 BCX19LT1 BCX18LT1 BCX20LT1 Unit CASE 318–08, STYLE 6 Collector–Emitter Voltage V CEO 45 25 Vdc Collector–Base Voltage V CBO 50 30 Vdc Emitter–Base Voltage V EBO 5.0 5.0 Vdc 500 500 mAdc Collector Current — Continuous IC 2 SOT–23 (TO–236AB) DEVICE MARKING BCX17LT1 = T1; BCX18LT1 = T2; BCX19LT1 = U1; BCX20LT1 = U2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 225 mW 1.8 mW/°C R θJA 556 °C/W PD 300 mW 2.4 mW/°C R θJA 417 °C/W T J , T stg –55 to +150 °C 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. M15–1/2 LESHAN RADIO COMPANY, LTD. PNP BCX17LT1 BCX18LT1 NPN BCX19LT1 BCX20LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 45 25 — — — — 50 30 — — — — — — — — 100 5.0 nAdc µAdc — — 10 µAdc 100 70 40 — — — 600 — — V CE(sat) — — 0.62 Vdc V BE(on) — — 1.2 Vdc OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = 10 mAdc, I B = 0) BCX17, 19 BCX18, 20 Collector–Emitter Breakdown Voltage (I C = 10 µAdc, I C = 0) BCX17, 19 BCX18, 20 Collector Cutoff Current (V CB = 20 Vdc, I E = 0) (V CB = 20 Vdc, I E = 0, T A = 150°C ) Emitter Cutoff Current (V EB = 5.0 Vdc, I C = 0) V (BR)CEO Vdc V (BR)CES Vdc I CBO I EBO ON CHARACTERISTICS DC Current Gain ( IC= 100 mAdc, VCE = 1.0 Vdc ) ( IC= 300 mAdc, VCE = 1.0 Vdc ) ( IC= 500 mAdc, VCE = 1.0 Vdc ) Collector–Emitter Saturation Voltage ( IC = 500mAdc, IB = 50mAdc ) Base–Emitter On Voltage hFE — ( IC = 500 mAdc, VCE = 1.0 Vdc ) M15–2/2