Rohm BR93AXX-WM Operation microwire bus eeprom Datasheet

Datasheet
Serial EEPROM Series Automotive EEPROM
105℃ Operation Microwire BUS EEPROM (3-Wire)
BR93Axx-WM
(1K 2K 4K 8K 16K)
●General Description
BR93Axx-WM is serial EEPROM of serial 3-line interface method.
●Features
„ 3-line communications of chip select, serial clock, serial data
input / output (the case where input and output are shared)
„ Wide temperature range -40℃ to +105℃
„ Operations available at high speed 2MHz clock(2.5V to 5.5V)
„ Speed write available (write time 5ms max.)
„ Same package and pin layout from 1Kbit to 16Kbit
„ 2.5V to 5.5V single power source operation
„ Address auto increment function at read operation
„ Write mistake prevention function
¾ Write prohibition at power on
¾ Write prohibition by command code
¾ Write mistake prevention function at low voltage
„ Program cycle auto delete and auto end function
„ Program condition display by READY / BUSY
„ Low current consumption
¾ At write operation (at 5V)
: 1.2mA (Typ.)
¾ At read operation (at 5V)
: 0.3mA (Typ.)
¾ At standby condition (at 5V) : 0.1μA (Typ.)(CMOS input)
„ TTL compatible (input / output s)
„ Data retention for 40 years(Ta≦25℃)
„ Endurance up to 1,000,000 times(Ta≦25℃)
„ Data at shipment all addresses FFFFh
„ AEC-Q100 Qualified
●Packages W(Typ.) x D(Typ.) x H(Max.)
SOP8
SOP- J8
5.00mm x 6.20mm x 1.71mm
4.90mm x 6.00mm x 1.65mm
TSSOP-B8
MSOP8
3.00mm x 6.40mm x 1.20mm
2.90mm x 4.00mm x 0.90mm
●BR93Axx-WM
SOP8
Package type
SOP-J8
TSSOP-B8
MSOP8
RFJ
RFVT
RFVM
●
●
●
●
●
●
●
●
●
●
●
●
F
RF
FJ
1Kbit
Power source
Bit format
Type
voltage
64×16 BR93A46-WM 2.5V to 5.5V
●
●
2Kbit
128×16
BR93A56-WM 2.5V to 5.5V
●
●
4Kbit
256×16
BR93A66-WM 2.5V to 5.5V
●
●
8Kbit
512×16
BR93A76-WM 2.5V to 5.5V
●
●
●
●
●
●
16Kbit
1K×16
BR93A86-WM 2.5V to 5.5V
●
●
●
●
●
●
Capacity
○Product structure：Silicon monolithic integrated circuit
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○This product is not designed protection against radioactive rays
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Datasheet
BR93Axx-WM (1K 2K 4K 8K 16K)
●Absolute Maximum Ratings (Ta=25℃)
Parameter
Symbol
Supply voltage
VCC
Limits
Unit
-0.3 to +6.5
V
0.45 (SOP8)
Permissible
dissipation
When using at Ta=25℃ or higher, 4.5mW to be reduced per 1℃.
0.45 (SOP-J8)
Pd
When using at Ta=25℃ or higher, 4.5mW to be reduced per 1℃.
W
0.33 (TSSOP-B8)
0.31 (MSOP8)
When using at Ta=25℃ or higher, 3.3mW to be reduced per 1℃.
When using at Ta=25℃ or higher, 3.1mW to be reduced per 1℃.
Storage temperature range
Tstg
-65 to +125
℃
Operating temperature range
Topr
-40 to +105
℃
‐
-0.3 to VCC+0.3
V
Terminal voltage
Remarks
●Memory Cell Characteristics (VCC=2.5V to 5.5V)
Limit
Parameter
Min.
Typ.
Max.
1,000,000
-
-
Unit
Ta≦25℃
550,000
Endurance *1
Ta≦60℃
Times
200,000
100,000
-
-
40
-
-
10
-
-
Data retention *1
Condition
Ta≦85℃
Ta≦105℃
Ta≦25℃
Years
Ta≦105℃
○Shipment data all address FFFFh
*1：Not 100％ TESTED
●Recommended Operating Ratings
Parameter
Symbol
Limits
Power source voltage
VCC
2.5 to 5.5
Input voltage
VIN
0 to VCC
●Electrical Characteristics
(Unless otherwise specified, VCC=2.5V to 5.5V, Ta=-40℃to +105℃)
Limits
Parameter
Symbol
Min.
Typ.
Max.
Unit
V
Unit
Condition
“L” input voltage 1
VIL1
-0.3
-
0.8
V
4.0V≦VCC≦5.5V
“L” input voltage 2
VIL2
-0.3
-
0.2 x VCC
V
VCC≦4.0V
“H” input voltage 1
VIH1
2.0
-
VCC+0.3
V
4.0V≦VCC≦5.5V
“H” input voltage 2
VIH2
0.7 x VCC
-
VCC+0.3
V
VCC≦4.0V
“L” output voltage 1
VOL1
0
-
0.4
V
IOL=2.1mA, 4.0V≦VCC≦5.5V
“L” output voltage 2
VOL2
0
-
0.2
V
IOL=100μA
“H” output voltage 1
VOH1
2.4
-
VCC
V
IOH=-0.4mA, 4.0V≦VCC≦5.5V
“H” output voltage 2
VOH2
VCC-0.2
-
VCC
V
IOH=-100μA
Input leak current
ILI
-1
-
1
µA
VIN=0V to VCC
Output leak current
ILO
-1
-
1
µA
VOUT=0V to VCC, CS=0V
ICC1
-
-
3.0
mA
fSK=2MHz, tE/W=5ms (WRITE)
ICC2
-
-
1.5
mA
fSK=2MHz (READ)
ICC3
-
-
4.5
mA
fSK=2MHz, tE/W=5ms (WRAL, ERAL)
ISB
-
-
2
µA
CS=0V, DO=OPEN
Current consumption
Standby current
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Datasheet
BR93Axx-WM (1K 2K 4K 8K 16K)
●Operating Timing Characteristics
(Ta=-40℃ to +105℃, VCC=2.5V to 5.5V)
Parameter
Symbol
SK frequency
SK “H” time
SK “L” time
CS “L” time
CS setup time
DI setup time
CS hold time
DI hold time
Data “1” output delay time
Data “0” output delay time
Time from CS to output establishment
Time from CS to High-Z
Write cycle time
Min.
230
230
200
50
100
0
100
-
fSK
tSKH
tSKL
tCS
tCSS
tDIS
tCSH
tDIH
tPD1
tPD0
tSV
tDF
tE/W
2.5V≦VCC≦5.5V
Typ.
Max.
2
200
200
150
150
5
Unit
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
●Sync Data Input / Output Timing
CS
tCSS
tSKH
tSKL
tCSH
SK
tDIS
tDIH
DI
tPD1
t PD0
DO(READ)
tDF
DO(WRITE)
STATUS VALID
○Data is taken by DI sync with the rise of SK.
○At read operation, data is output from DO in sync with the rise of SK.
○The status signal at write (READY / BUSY) is output after tCS from the fall of CS after write command input, at the area
DO where CS is “H”, and valid until the next command start bit is input. And, while CS is “L”, DO becomes High-Z.
○After completion of each mode execution, set CS “L” once for internal circuit reset, and execute the following operation
mode.
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Datasheet
BR93Axx-WM (1K 2K 4K 8K 16K)
●Block Diagram
CS
Power source voltage detection
Command decode
Control
SK
DI
Clock generation
Address
buffer
Command
register
6bit
7bit
8bit
9bit
10bit
Data
register
DO
High voltage occurrence
Write
prohibition
Address
decoder
6bit
7bit
8bit
9bit
10bit
R/W
amplifier
16bit
16bit
1,024 bit
2,048 bit
4,096 bit
8,192 bit
16,384 bit
EEPROM
Dummy bit
●Pin Configurations
TOP VIEW
TOP VIEW
NC
GND
DO
DI
Vcc
NC
8
7
6
5
8
7
BR93AXXF-WM:SOP8
BR93AXXFJ-WM:SOP-J8
NC
GND
6
5
BR93AXXRF-WM:SOP8
BR93AXXRFJ-WM:SOP-J8
BR93AXXRFVT-WM:TSSOP-B8
BR93AXXRFVM-WM:MSOP8
1
2
3
4
1
2
3
4
NC
Vcc
CS
SK
CS
SK
DI
DO
●Pin Descriptions
Pin name
I/O
Function
VCC
-
Power source
GND
-
All input / output reference voltage, 0V
CS
Input
Chip select input
SK
Input
Serial clock input
DI
Input
Start bit, ope code, address, and serial data input
DO
Output
NC
-
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Serial data output, READY / BUSY internal condition display output
Non connected terminal, Vcc, GND or OPEN
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Datasheet
BR93Axx-WM (1K 2K 4K 8K 16K)
●Typical Performance Curves
(The following characteristic data are typ. values.)
Figure 2. L input voltage VIL (CS,SK,DI)
Figure 1. H input voltage VIH (CS, SK, DI)
Figure 3. L output voltage VOL-IOL (Vcc=2.5V)
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Figure 4. L output voltage VOL-IOL (Vcc=4.0V)
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Datasheet
BR93Axx-WM (1K 2K 4K 8K 16K)
●Typical Performance Curves‐Continued
Figure 6. H output voltage VOH-IOH (Vcc=4.0V)
INPUT LEAK CURRENT : ILI (uA)
OUTPUT LEAK CURRENT : ILO (uA)
Figure 5. H output voltage VOH-IOH
Figure 7. Input leak current ILI (CS, SK, DI)
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Figure 8. Output leak current ILO (DO)
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Datasheet
BR93Axx-WM (1K 2K 4K 8K 16K)
●Typical Performance Curves‐Continued
Figure 10. Consumption current at READ operation
Icc2 (READ, fSK=2MHz)
STAND BY CURRENT : ISB (uA)
Figure 9. Current consumption at WRITE operation
Icc1 (WRITE, fSK=2MHz)
Figure 12. Consumption current at standby
ISB
Figure 11. Consumption current at WRAL operation
Icc3 (WRAL, fSK=2MHz)
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Datasheet
BR93Axx-WM (1K 2K 4K 8K 16K)
●Typical Performance Curves‐Continued
Figure 13. SK frequency fSK
Figure 14. SK high time tSKH
Figure 15. SK low time tSKL
Figure 16. CS low time tCS
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Datasheet
BR93Axx-WM (1K 2K 4K 8K 16K)
●Typical Performance Curves‐Continued
Figure 17. CS hold time tCSH
Figure 18. CS setup time tCSS
Figure 19. DI hold time tDIH
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Figure 20. DI setup time tDIS
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Datasheet
BR93Axx-WM (1K 2K 4K 8K 16K)
●Typical Performance Curves‐Continued
Figure 21. Data “0” output delay time tPD0
Figure 22. Output data “1” delay time tPD1
SUPPLY VOLTAGE : VCC (V)
Figure 23. Time from CS to output establishment tSV
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Figure 24. Time from CS to High-Z tDF
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Datasheet
BR93Axx-WM (1K 2K 4K 8K 16K)
●Typical Performance Curves‐Continued
Figure 25. Write cycle time tE/W
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Datasheet
BR93Axx-WM (1K 2K 4K 8K 16K)
●Description of Operations
Communications of the Microwire Bus are carried out by SK (serial clock), DI (serial data input), DO (serial data output),
and CS (chip select) for device selection.
When to connect one EEPROM to a microcontroller, connect it as shown in Figure 26 (a) or Figure 26 (b). When to use
the input and output common I/O port of the microcontroller, connect DI and DO via a resistor as shown in Figure 26
(b) (Refer to page18.), and connection by 3 lines is available.
In the case of plural connections, refer to Figure 26 (c).
Microcontroller
SK
SK
SK
DO
DI
DO
DI
DI
DO
CS3
CS1
CS0
SK
DO
DI
CS
DO
Figure 26-(a) Connection by 4 lines
Figure 26-(b) Connection by 3 lines
CS
SK
DI
DO
SK
BR93AXX
CS
SK
DI
DO
CS
Microcontroller
CS
BR93AXX
CS
SK
DI
DO
Microcontroller
CS
Device 1
Device 2
Device 3
Figure 26-(c) Connection example of plural devices
Figure 26. Connection method with microcontroller
Communications of the Microwire Bus are started by the first “1” input after the rise of CS. This input is called a start bit.
After input of the start bit, input ope code, address and data. Address and data are input all in MSB first manners.
“0” input after the rise of CS to the start bit input is all ignored. Therefore, when there is limitation in the bit width of PIO
of the microcontroller, input “0” before the start bit input, to control the bit width.
●Command Mode
Command
Read (READ)
*1
Write enable (WEN)
Write (WRITE)
*2
Start
bit
1
Ope
code
10
1
00
1
01
BR93A46-WM
Address
BR93A56/66-WM
BR93A76/86-WM
A5,A4,A3,A2,A1,A0
A7,A6,A5,A4,A3,A2,A1,A0
A9,A8,A7,A6,A5,A4,A3,A2,A1,A0
1
1
*
*
*
*
A5,A4,A3,A2,A1,A0
1
1
*
*
*
*
* *
A7,A6,A5,A4,A3,A2,A1,A0
1
1
*
*
*
*
* *
*
Data
D15 to D0(READ DATA)
*
A9,A8,A7,A6,A5,A4,A3,A2,A1,A0
D15 to D0(WRITE DATA)
*2
0 1 * * * *
0 1 * * * * * *
0 1 * * * * * * * *
D15 to D0(WRITE DATA)
Write all (WRAL)
1
00
0 0 * * * *
0 0 * * * * * *
0 0 * * * * * * * *
Write disable (WDS)
1
00
A5,A4,A3,A2,A1,A0
A7,A6,A5,A4,A3,A2,A1,A0
A9,A8,A7,A6,A5,A4,A3,A2,A1,A0
Erase (ERASE)
1
11
1 0 * * * *
1 0 * * * * * *
1 0 * * * * * * * *
Chip erase (ERAL)
1
00
・ Input the address and the data in MSB first manners.
A7 of BR93A56-WM becomes Don't Care.
・ As for *, input either VIH or VIL.
A9 of BR93A76-WM becomes Don't Care.
*Start bit
Acceptance of all the commands of this IC starts at recognition of the start bit.
The start bit means the first “1” input after the rise of CS.
*1 As for read, by continuous SK clock input after setting the read command, data output of the set address starts, and
address data in significant order are sequentially output continuously. (Auto increment function)
*2 When the read and the write all commands are executed, data written in the selected memory cell is automatically deleted, and input data is written.
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Datasheet
BR93Axx-WM (1K 2K 4K 8K 16K)
●Timing Chart
1) Read cycle (READ)
～
～
～
～
～
～
CS
～
～
*1
1
4
n
～
～
DI
2
～
～
1
n+1
～
～
SK
Am
0
A1
～
～
1
A0
～
～
～
～
*2
BR93A46-WM : n=25, m=5
BR93A56-WM
: n=27, m=7
BR93A66-WM
BR93A76-WM
: n=29, m=9
BR93A86-WM
～
～
D14
D1
D0
D15 D14
～
～
D15
～
～
0
DO
High-Z
*1 Start bit
When data “1” is input for the first time after the rise of CS, this is recognized as a start bit. And when “1” is input after plural “0” are input, it is recognized as
a start bit, and the following operation is started. This is common to all the commands to described hereafter.
Figure 27. Read cycle
○When the read command is recognized, input address data (16bit) is output to serial. And at that moment, at taking A0, in
sync with the rise of SK, “0” (dummy bit) is output. And, the following data is output in sync with the rise of SK.
This IC has an address auto increment function valid only at read command. This is the function where after the above
read execution, by continuously inputting SK clock, the above address data is read sequentially. And, during the auto
increment, keep CS at “H”.
2) Write cycle (WRITE)
～
～
～
～
～
～
tCS
CS
～
～
A1
A0
D15
D14
D1
D0
～
～
Am
～
～
1
～
～
0
～
～
1
n
4
～
～
DI
2
～
～
1
～
～
～
～
SK
STATUS
BR93A46-WM : n=25, m=5
BR93A56-WM
: n=27, m=7
BR93A66-WM
BR93A76-WM
: n=29, m=9
BR93A86-WM
tSV
BUSY READY
～
～
DO
High-Z
tE/W
Figure 28. Write cycle
○In this command, input 16bit data (D15 to D0) are written to designated addresses (Am to A0). The actual write starts by
the fall of CS of D0 taken SK clock.
When STATUS is not detected, (CS=”L” fixed) Max. 5ms in conformity with tE/W, and when STATUS is detected (CS=”H”),
all commands are not accepted for areas where “L” (BUSY) is output from D0, therefore, do not input any command.
3) Write all cycyle (WRAL)
～
～
～
～
～
～
tCS
CS
1
D15
D14
D1
D0
～
～
0
～
～
0
～
～
0
～
～
1
～
～
DI
n
5
～
～
2
～
～
1
～
～
～
～
SK
STATUS
BR93A46-WM : n=25
BR93A56-WM
: n=27
BR93A66-WM
BR93A76-WM
: n=29
BR93A86-WM
～
～
～
～
tSV
BUSY READY
～
～
DO
High-Z
Figure 29. Write all cycle
tE/W
○In this command, input 16bit data is written simultaneously to all adresses. Data is not written continuously per one word
but is written in bulk, the write time is only Max. 5ms in conformity with tE/W.
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Datasheet
BR93Axx-WM (1K 2K 4K 8K 16K)
4) Write enable (WEN) / disable (WDS) cycle
～
～
CS
2
1
3
4
5
6
7
8
～
～
SK
1
0
0
～
～
DI
～
～
ENABLE=1 1
DISABLE=0 0
BR93A46-WM : n=9
BR93A56-WM
: n=11
BR93A66-WM
BR93A76-WM
: n=13
BR93A86-WM
n
DO
High-Z
Figure 30. Write enable (WEN) / disable (WDS) cycle
○ At power on, this IC is in write disable status by the internal RESET circuit. Before executing the write command, it is
necessary to execute the write enable command. And, once this command is executed, it is valid unitl the write disable
command is executed or the power is turned off. However, the read command is valid irrespective of write enable / diable
command. Input to SK after 6 clocks of this command is available by either “H” or “L”, but be sure to input it.
○ When the write enable command is executed after power on, write enable status gets in. When the write disable
command is executed then, the IC gets in write disable status as same as at power on, and then the write command is
canceled thereafter in software manner. However, the read command is executable. In write enable status, even when the
write command is input by mistake, write is started. To prevent such a mistake, it is recommended to execute the write
disable command after completion of write.
5) Erase cycle timing (ERASE)
～
～
～
～
STATUS
～
～
～
～
1
～
～
DI
n
4
2
～
～
1
～
～
SK
A3
A2
A1
A0
～
～
tSV
～
～
BUSY READY
～
～
DO
BR93A46-WM : n=9, m=5
BR93A56-WM
: n=11, m=7
BR93A66-WM
BR93A76-WM
: n=13, m=9
BR93A86-WM
～
～
Am
～
～
1
～
～
1
～ ～
～
～
tCS
CS
High-Z
Figure 31. Erase cycle timing
tE/W
○In this command, data of the designated address is made into “1”. The data of the designated address becomes “FFFFh”.
Actual ERASE starts at the fall of CS after the fall of A0 taken SK clock.
In ERASE, status can be detected in the same manner as in WRITE command.
6) Chip erase cycle timing (ERAL)
tSV
～
～
0
～
～
1
～
～
0
～
～
0
～
～
1
n
～
～
DI
4
～
～
2
STATUS
～
～
1
～
～
SK
BR93A46-WM : n=9
BR93A56-WM
: n=11
BR93A66-WM
BR93A76-WM
: n=13
BR93A86-WM
BUSY READY
～
～
DO
～
～
～
～
tCS
CS
High-Z
tE/W
Figure 32. Chip erase cycle timing
○In this command, data of all addresses is erased. Data of all addresses becomes ”FFFFh”.
Actual ERASE starts at the fall of CS after the falll of the n-th clock from the start bit input.
In ERAL, status can be detected in the same manner as in WRITE command.
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Datasheet
BR93Axx-WM (1K 2K 4K 8K 16K)
●Application
1) Method to cancel each command
○READ
Start bit
Ope code
1bit
2bit
Address*1
(In the case of BR93A46-WM)
Data
6bit
16bit
＊1 Address is 8 bits in BR93A56-WM, BR93A66-WM
Address is 10 bits in BR93A76-WM, BR93A86-WM
Cancel is available in all areas in read mode.
・Method to cancel：cancel by CS=“L”
Figure 33. READ cancel available timing
・25 Rise of clock
○WRITE, WRAL
SK
DI
25
24
D1
*2
D0
Enlarged figure
Start bit
Ope code
1bit
Address
2bit
*1
Data
6bit
tE/W
(In the case of BR93A46-WM)
16bit
b
a
a：From start bit to 25 clock rise＊2
Cancel by CS=“L”
b：25 clock rise and after＊2
Cancellation is not available by any means. If Vcc is made OFF in this area,
designated address data is not guaranteed, therefore write once again.
And when SK clock is input continuously, cancellation is not available.
29 Rise of clock
*2
SK
30
DI
28
29
*1 Address is 8 bits in BR93A56-WM, BR93A66-WM
Address is 10 bits in BR93A76-WM BR93A86-WM
*2 27 clocks in BR93A56-WM, BR93A66-WM
29 clocks in BR93A76-WM BR93A86-WM
31
D0
D1
b
c
a
Enlarged figure
Start bit
1bit
Address
Ope code
2bit
10bit
*1
Data
tE/W
(In the case of BR93A86-WM)
16bit
a
b
c
a：From start bit to 29 clock rise
Cancel by CS=“L”
b：29 clock rise and after
Cancellation is not available by any means. If Vcc is made OFF in this area,
designated address data is not guaranteed, therefore write once again.
c：30 clock rise and after
Cancel by CS=“L”
However, when write is started in b area (CS is ended), cancellation is not
available by any means.
And when SK clock is output continuously is not available.
Note 1) If Vcc is made OFF in this area, designated address data is
not guaranteed, therefore write once again.
Note 2) If CS is started at the same timing as that of the SK rise,
write execution/cancel becomes unstable, therefore, it is
recommended to fail in SK=”L” area.
As for SK rise, recommend timing of tCSS/tCSH or higher.
Figure 34. WRITE, WRAL cancel available timing
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Datasheet
BR93Axx-WM (1K 2K 4K 8K 16K)
○ERASE, ERAL
9 Rise of clock＊2
8
SK
DI
A1
9
A0
Enlarged figure
Start bit
1bit
Ope code
Address
2bit
*1
(In the case of BR93A46-WM)
1/2
tE/W
6bit
a
b
a：From start bit to 9 clock rise＊2
Cancel by CS=“L”
b：9 clock rise and after＊2
Cancellation is not available by any means. If Vcc is made OFF in this area,
designated address data is not guaranteed, therefore write once again.
And when SK clock is input continuously, cancellation is not available.
＊1 Address is 8 bits in BR93A56-WM, BR93A66-WM
Address is 10 bits in BR93A76-WM
＊2 11 clocks in BR93A56-WM, BR93A66-WM
13 clocks in BR93A76-WM
13 Rise of clock
12
SK
DI
1bit
Ope code
2bit
Address
*1
14
15
D1
a
Start bit
13
*2
tE/W
c
b
Enlarged figure
(In the case of BR93A86-WM)
10bit
b
a
c
a：From start bit to 13 clock rise
Cancel by CS=“L”
Note 1) If Vcc is made OFF in this area, designated address data is
not guaranteed, therefore write once again.
b：13 clock rise and after
Cancellation is not available by any means. If Vcc is made OFF in this area,
designated address data is not guaranteed, therefore write once again.
Note 2) If CS is started at the same timing as that of the SK rise,
write execution/cancel becomes unstable, therefore, it is
recommended to fail in SK=”L” area.
As for SK rise, recommend timing of tCSS/tCSH or higher.
c：14 clock rise and after
Cancel by CS=“L”
However, when write is started in b area (CS is ended), cancellation is not
available by any means.
And when SK clock is output continuously is not available.
Figure 35. ERASE, ERAL cancel available timing
2) At standby
○Standby current
When CS is “L”, SK input is “L”, DI input is “H”, and even with middle electric potential, current does not increase.
○Timing
As shown in Figure 36, when SK at standby is “H”, if CS is started, DI status may be read at the rise edge.
At standby and at power ON/OFF, when to start CS, set SK input or DI input to “L” status. (Refer to Figure 37)
If CS is started when SK=”L” or DI=”L”, a start
bit is recognized correctly.
CS=SK=DI=”H”
Wrong recognition as a start bit
CS
CS
Start bit input
SK
SK
DI
DI
Figure 37. Normal operating timing
Figure 36. Wrong operating timing
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Datasheet
BR93Axx-WM (1K 2K 4K 8K 16K)
3) Equivalent circuit
Output circuit
Input citcuit
RESET int.
CSint.
CS
DO
OEint.
Figure 39. Input circuit (CS)
Figure 38. Output circuit (DO)
Input circuit
Input circuit
CS int.
CS int.
DI
SK
Figure 40. Input circuit (DI)
Figure 41. Input circuit (SK)
4) I/O peripheral circuit
4-1) Pull down CS.
By making CS=“L” at power ON/OFF, mistake in operation and mistake write are prevented.
○Pull down resistance Rpd of CS pin
To prevent mistake in operation and mistake write at power ON/OFF, CS pull down resistance is necessary. Select an
appropriate value to this resistance value from microcontroller VOH, IOH, and VIL characteristics of this IC.
VOHM
IOHM
VOHM ≧ VIHE
Rpd ≧
Microcontroller
EEPROM
VOHM
“H” output
Rpd
・・・②
Example) When VCC =5V, VIHE=2V, VOHM=2.4V, IOHM=2mA,
from the equation ①,
2.4
Rpd ≧
-3
2×10
VIHE
IOHM
・・・①
“L” input
∴
Rpd ≧
1.2 [kΩ]
With the value of Rpd to satisfy the above equation, VOHM becomes
2.4V or higher, and VIHE (=2.0V), the equation ② is also satisfied.
Figure 42. CS pull down resistance
・VIHE : EEPROM VIH specifications
・VOHM : Microcontroller VOH specifications
・IOHM : Microcontroller IOH specifications
4-2) DO is available in both pull up and pull down.
Do output become “High-Z” in other READY / BUSY output timing than after data output at read command and write
command. When malfunction occurs at “High-Z” input of the microcontroller port connected to DO, it is necessary to
pull down and pull up DO. When there is no influence upon the microcontroller operations, DO may be OPEN.
If DO is OPEN, and at timing to output status READY, at timing of CS=“H”, SK=“H”, DI=“H”, EEPROM recognizes this
as a start bit, resets READY output, and DO=”High-Z”, therefore, READY signal cannot be detected. To avoid such
output, pull up DO pin for improvement.
CS
CS “H”
SK
SK
Enlarged
DI
D0
DI
High-Z
High-Z
READY
DO BUSY
DO
BUSY
CS=SK=DI=”H”
When DO=OPEN
Improvement by DO pull up
DO
READY
BUSY
CS=SK=DI=”H”
When DO=pull up
Figure 43. READY output timing at DO=OPEN
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Datasheet
BR93Axx-WM (1K 2K 4K 8K 16K)
○Pull up resistance Rpu and pull down resistance Rpd of DO pin
As for pull up and pull down resistance value, select an appropriate value to this resistance value from microcontroller
VIH, VIL, and VOH, IOH, VOL, IOL characteristics of this IC.
Microcontroller
Vcc－VOLE
Rpu ≧
IOLE
EEPROM
Rpu
VILM
VOLE ≦
IOLE
VOLE
“L” output
∴
Rpu ≧
・VOLE : EEPROM VOL specifications
・IOLE : EEPROM IOL specifications
・VILM : Microcontroller VIL specifications
VOHE
Rpd ≧
・・・⑤
IOHE
EEPROM
VOHE ≧
VIHM
VOHE
Rpd
IOHE
2.2 [kΩ]
With the value of Rpu to satisfy the above equation, VOLE becomes
0.4V or below, and with VILM(=0.8V), the equation ④ is also satisfied.
Figure 44. DO pull up resistance
“H” input
・・・④
Example) When VCC =5V, VOLE=0.4V, IOLE=2.1mA, VILM=0.8V,
from the equation ③,
5－0.4
Rpu ≧
2.1×10-3
“L” input
Microcontroller
VILM
・・・③
VIHM
・・・⑥
Example) When VCC =5V, VOHE=Vcc－0.2V, IOHE=0.1mA,
VIHM=Vcc×0.7V from the equation ⑤,
5－0.2
Rpd ≧
-3
0.1×10
“H” output
∴
Rpd ≧
48 [kΩ]
With the value of Rpd to satisfy the above equation, VOHE becomes
2.4V or below, and with VIHM (=3.5V), the equation ⑥ is also satisfied.
Figure 45. DO pull down resistance
・VOHE : EEPROM VOH specifications
・IOHE : EEPROM IOH specifications
・VIHM : Microcontroller VIH specifications
5) READY / BUSY status display (DO terminal)
(common to BR93A46-WM,BR93A56-WM, BR93A66-WM, BR93A76-WM, BR93A86-WM)
This display outputs the internal status signal. When CS is started after tCS (Min.200ns)
from CS fall after write command input, “H” or “L” is output.
R/B display=“L” (BUSY) = write under execution
(DO status) After the timer circuit in the IC works and creates the period of tE/W, this time circuit completes automatically.
And write to the memory cell is made in the period of tE/W, and during this period, other command is not accepted.
R/B display = “H” (READY) = command wait status
(DO status) Even after tE/W (max.5ms) from write of the memory cell, the following command is accepted.
Therefore, CS=“H” in the period of tE/W, and when input is in SK, DI, malfunction may occur, therefore, DI=“L” in the area
CS=“H”. (Especially, in the case of shared input port, attention is required.)
*Do not input any command while status signal is output. Command input in BUSY area is cancelled, but command input in READY area is accepted.
Therefore, status READY output is cancelled, and malfunction and mistake write may be made.
STATUS
CS
SK
CLOCK
DI
WRITE
INSTRUCTION
DO
tSV
High-Z
READY
BUSY
Figure 46. R/B status output timing chart
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BR93Axx-WM (1K 2K 4K 8K 16K)
6) When to directly connect DI and DO
This IC has independent input terminal DI and output terminal DO, and separate signals are handled on timing chart,
meanwhile, by inserting a resistance R between these DI and DO terminals, it is possible to carry out control by 1 control
line.
Microcontroller
EEPROM
DI/O PORT
DI
R
DO
Figure 47. DI, DO control line common connection
○Data collision of microcontroller DI/O output and DO output and feedback of DO output to DI input.
Drive from the microcontroller DI/O output to DI input on I/O timing, and signal output from DO output occur at the
same time in the following points.
(1) 1 clock cycle to take in A0 address data at read command
Dummy bit “0” is output to DO terminal.
→When address data A0 = “1” input, through current route occurs.
EEPROM CS input
“H”
EEPROM SK input
A1
EEPROM DI input
A0
Collision of DI input and DO output
EEPROM DO output
0
High-Z
Microcontroller DI/O port
A1
D15 D14 D13
A0
Microcontroller output
High-Z
Microcontroller input
Figure 48. Collision timing at read data output at DI, DO direct connection
(2) Timing of CS = “H” after write command. DO terminal in READY / BUSY function output.
When the next start bit input is recognized, “HIGH-Z” gets in.
→Especially, at command input after write, when CS input is started with microcontroller DI/O output “L”,
READY output “H” is output from DO terminal, and through current route occurs.
Feedback input at timing of these (1) and (2) does not cause disorder in basic operations, if resistance R is inserted.
～
～
EEPROM SK input
Write command
EEPROM DI input
Write command
EEPROM DO output
Write command
～
～
Write command
～
～
EEPROM CS input
～
～
～
～
～
～
READY
～
～
～
～
BUSY
READY
High-Z
Collision of DI input and DO output
BUSY
Microcontroller output
Microcontroller input
～
～
READY
Write command
～
～
Microcontroller DI/O port
Microcontroller output
Figure 49. Collision timing at DI, DO direct connection
Note) As for the case (2), attention must be paid to the following.
When status READY is output, DO and DI are shared, DI=”H” and the microcontroller DI/O=”High-Z” or the microcontroller DI/O=”H”,if SK clock is
input, DO output is input to DI and is recognized as a start bit, and malfunction may occur. As a method to avoid malfunction, at status READY
output, set SK=“L”, or start CS within 4 clocks after “H” of READY signal is output.
Start bit
CS
Because DI=”H”, set
SK=”L” at CS rise.
SK
DI
READY
DO
High-Z
Figure 50. Start bit input timing at DI, DO direct connection
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Datasheet
BR93Axx-WM (1K 2K 4K 8K 16K)
○Selection of resistance value R
The resistance R becomes through current limit resistance at data collision. When through current flows, noises of
power source line and instantaneous stop of power source may occur. When allowable through current is defined as I,
the following relation should be satisfied. Determine allowable current amount in consideration of impedance and so
forth of power source line in set. And insert resistance R, and set the value R to satisfy EEPROM input level VIH/VIL
even under influence of voltage decline owing to leak current and so forth. Insertion of R will not cause any influence
upon basic operations.
(1) Address data A0 = “1” input, dummy bit “0” output timing
(When microcontroller DI/O output is “H”, EEPROM DO outputs “L”, and “H” is input to DI)
・Make the through current to EEPROM 10mA or below.
・See to it that the level VIH of EEPROM should satisfy the following.
Conditions
Microcontroller
VOHM ≦ VIHE
EEPROM
VOHM ≦ IOHM×R + VOLE
DI/O PORT
DI
At this moment, if VOLE=0V,
VOHM
“H” output
VOHM ≦ IOHM×R
R
IOHM
VOHM
・・・⑦
IOHM
・VIHE
: EEPROM VIH specifications
・VOLE : EEPROM VOL specifications
・VOHM : Microcontroller VOH specifications
・IOHM : Microcontroller IOH specifications
∴
DO
VOLE
“L” output
R ≧
Figure 51. Circuit at DI, DO direct connection (Microcontroller DI/O “H” output, EEPROM “L” output)
(2) DO status READY output timing
(When the microcontroller DI/O is “L”, EEPROM DO output “H”, and “L” is input to DI)
・Set the EEPROM input level VIL so as to satisfy the following.
Conditions
Microcontroller
“L” output
EEPROM
DI/O PORT
VOLM ≧ VILE
DI
VOLM ≧ VOHE – IOLM×R
VOLM
As this moment, VOHE=Vcc
R
IOHM
VOLM ≧ Vcc – IOLM×R
DO
VOHE
∴
“H” output
・VILE
・VOHE
・VOLM
・IOLM
Vcc – VOLM
・・・⑧
IOLM
: EEPROM VIL specifications
: EEPROM VOH specifications
: Microcontroller VOL specifications
: Microcontroller IOL specifications
Example) When Vcc=5V, VOHM=5V, IOHM=0.4mA, VOLM=5V, IOLM=0.4mA,
From the equation ⑦,
R ≧
R ≧
∴
R ≧
From the equation⑧,
VOHM
R ≧
IOHM
5
R ≧
0.4×10-3
12.5 [kΩ]
・・・⑨
∴
R ≧
Vcc – VOLM
IOLM
5 – 0.4
2.1×10-3
2.2 [kΩ]
・・・⑩
Therefore, from the equations ⑨ and ⑩,
∴
R ≧
12.5 [kΩ]
Figure 52. Circuit at DI, DO direct connection (Microcontroller DI/O “L” output, EEPROM “H” output)
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Datasheet
BR93Axx-WM (1K 2K 4K 8K 16K)
7) Notes on power ON/OFF
・At power ON/OFF, set CS “L”.
When CS is “H”, this IC gets in input accept status (active). If power is turned on in this status, noises and the likes may
cause malfunction, mistake write or so. To prevent these, at power ON, set CS “L”. (When CS is in “L” status, all inputs
are cancelled.) And at power decline, owing to power line capacity and so forth, low power status may continue long. At
this case too, owing to the same reason, malfunction, mistake write may occur, therefore, at power OFF too, set CS “L”.
VCC
VCC
GND
VCC
CS
GND
Bad example
Good example
Figure 53. Timing at power ON/OFF
(Bad example) CS pin is pulled up to Vcc.
(Good example) It is “L” at power ON/OFF.
In this case, CS becomes “H” (active status), and EEPROM may have malfunction,
mistake write owing to noise and the likes.
Even when CS input is High-Z, the status becomes like this case, which please note.
Set 10ms or higher to recharge at power OFF.
When power is turned on without observing this condition,
IC internal circuit may not be reset, which please note.
○POR citcuit
This IC has a POR (Power On Reset) circuit as a mistake write countermeasure. After POR operation, it gets in write
disable status. The POR circuit is valid only when power is ON, and does not work when power is OFF. However, if CS
is “H” at power ON/OFF, it may become write enable status owing to noises and the likes. For secure operations,
observe the follwing conditions.
1. Set CS=”L”
2. Turn on power so as to satisfy the recommended conditions of tR, tOFF, Vbot for POR circuit operation.
tR
Recommended conditions of tR, tOFF, Vbot
VCC
tR
tOFF
Vbot
10ms or below 10ms or higher 0.3V or below
tOFF
Vbot
100ms or below 10ms or higher 0.2V or below
0
Figure 54. Rise waveform diagram
○LVCC circuit
LVCC (VCC-Lockout) circuit prevents data rewrite operation at low power, and prevents wrong write.
At LVCC voltage (Typ.=1.2V) or below, it prevent data rewrite.
8) Noise countermeasures
○VCC noise (bypass capacitor)
When noise or surge gets in the power source line, malfunction may occur, therefore, for removing these, it is
recommended to attach a by pass capacitor (0.1µF) between IC VCC and GND, At that moment, attach it as close to IC
as possible.And, it is also recommended to attach a bypass capacitor between board VCC and GND.
○SK noise
When the rise time (tR) of SK is long, and a certain degree or more of noise exists, malfunction may occur owing to
clock bit displacement. To avoid this, a Schmitt trigger circuit is built in SK input. The hysteresis width of this circuit is
set about 0.2V, if noises exist at SK input, set the noise amplitude 0.2Vp-p or below. And it is recommended to set the
rise time (tR) of SK 100ns or below. In the case when the rise time is 100ns or higher, take sufficient noise
countermeasures. Make the clock rise, fall time as small as possible.
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Datasheet
BR93Axx-WM (1K 2K 4K 8K 16K)
●Notes for Use
(1) Described numeric values and data are design representative values, and the values are not guaranteed.
(2) We believe that application circuit examples are recommendable, however, in actual use, confirm characteristics further
sufficiently. In the case of use by changing the fixed number of external parts, make your decision with sufficient margin in
consideration of static characteristics and transition characteristics and fluctuations of external parts and our IC.
(3) Absolute Maximum Ratings
If the absolute maximum ratings such as impressed voltage and operating temperature range and so forth are exceeded,
IC may be destructed. Do not impress voltage and temperature exceeding the absolute maximum ratings. In the case of
fear exceeding the absolute maximum ratings, take physical safety countermeasures such as fuses, and see to it that
conditions exceeding the absolute maximum ratings should not be impressed to IC.
(4) GND electric potential
Set the voltage of GND terminal lowest at any operating condition. Make sure that each terminal voltage is not lower than
that of GND terminal in consideration of transition status.
(5) Heat design
In consideration of allowable loss in actual use condition, carry out heat design with sufficient margin.
(6) Terminal to terminal shortcircuit and wrong packaging
When to package IC onto a board, pay sufficient attention to IC direction and displacement. Wrong packaging may
destruct IC. And in the case of shortcircuit between IC terminals and terminals and power source, terminal and GND
owing to foreign matter, IC may be destructed.
(7) Use in a strong electromagnetic field may cause malfunction, therefore, evaluate design sufficiently
.
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Datasheet
BR93Axx-WM (1K 2K 4K 8K 16K)
●Ordering Information Product Code Description
B
R
9
3
A
x
x
x
x
-
W
M
x
BUS Type
93：Microwire
Operating temperature
-40℃ to +105℃
Capacity
46=1K
76=8K
56=2K
86=16K
66=4K
Package type
F, RF
: SOP8
FJ, RFJ
: SOP-J8
RFVT
: TSSOP-B8
RFVM
: MSOP8
W : Double cell
M : For Automotive Application
Package specifications
E2
：Embossed tape and reel (SOP8, SOP-J8, TSSOP-B8)
TR ：Embossed tape nad reel (MSOP8)
●Lineup
Capacity
Package
Type
SOP8
1K
SOP-J8
TSSOP-B8
MSOP8
SOP8
2K
SOP-J8
TSSOP-B8
MSOP8
SOP8
4K
SOP-J8
TSSOP-B8
MSOP8
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Quantity
Capacity
Package
Type
Quantity
SOP8
Reel of 2500
8K
Reel of 3000
Reel of 2500
SOP-J8
TSSOP-B8
MSOP8
SOP8
Reel of 2500
16K
Reel of 3000
Reel of 2500
SOP-J8
TSSOP-B8
MSOP8
Reel of 3000
Reel of 3000
Reel of 2500
Reel of 3000
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x
Datasheet
BR93Axx-WM (1K 2K 4K 8K 16K)
●Physical Dimension Tape and Reel Information
SOP8
6
5
1 2
3
4
0.3MIN
7
4.4±0.2
6.2±0.3
8
+6°
4° −4°
0.9±0.15
5.0±0.2
(MAX 5.35 include BURR)
0.595
1.5±0.1
+0.1
0.17 -0.05
S
S
0.11
0.1
1.27
0.42±0.1
(Unit : mm)
<Tape and Reel information>
Tape
Embossed carrier tape
Quantity
2500pcs
Direction
of feed
E2
The direction is the 1pin of product is at the upper left when you hold
( reel on the left hand and you pull out the tape on the right hand
Direction of feed
1pin
Reel
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Datasheet
BR93Axx-WM (1K 2K 4K 8K 16K)
●Physical Dimension Tape and Reel Information - Continued
SOP-J8
4.9±0.2
(MAX 5.25 include BURR)
7
6
5
1
2
3
4
0.45MIN
8
3.9±0.2
6.0±0.3
+6°
4° −4°
0.545
0.2±0.1
1.375±0.1
S
0.175
1.27
0.42±0.1
0.1 S
(Unit : mm)
<Tape and Reel information>
Tape
Embossed carrier tape
Quantity
2500pcs
Direction
of feed
E2
The direction is the 1pin of product is at the upper left when you hold
( reel on the left hand and you pull out the tape on the right hand
Direction of feed
1pin
Reel
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©2013 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
)
∗ Order quantity needs to be multiple of the minimum quantity.
25/29
TSZ02201-0R1R0G100150-1-2
6.Nov.2013 Rev.003
Datasheet
BR93Axx-WM (1K 2K 4K 8K 16K)
●Physical Dimension Tape and Reel Information – Continued
TSSOP-B8
3.0±0.1
(MAX 3.35 include BURR)
7
6
5
1
2
3
4
4±4
1.0±0.2
0.5 ± 0.15
1PIN MARK
0.525
+0.05
0.145 –0.03
S
0.1 ± 0.05
1.0 ± 0.05
1.2MAX
6.4 ± 0.2
4.4 ± 0.1
8
0.08 S
+0.05
0.245 –0.04
0.08
M
0.65
(Unit : mm)
<Tape and Reel information>
Tape
Embossed carrier tape
Quantity
3000pcs
Direction
of feed
E2
The direction is the 1pin of product is at the upper left when you hold
( reel on the left hand and you pull out the tape on the right hand
Direction of feed
1pin
Reel
www.rohm.com
©2013 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
)
∗ Order quantity needs to be multiple of the minimum quantity.
26/29
TSZ02201-0R1R0G100150-1-2
6.Nov.2013 Rev.003
Datasheet
BR93Axx-WM (1K 2K 4K 8K 16K)
●Physical Dimension Tape and Reel Information – Continued
MSOP8
4.0±0.2
2.8±0.1
8 7 6 5
0.6±0.2
+6°
4° −4°
0.29±0.15
2.9±0.1
(MAX 3.25 include BURR)
1 2 3 4
1PIN MARK
+0.05
0.145 –0.03
0.475
0.08±0.05
0.75±0.05
0.9MAX
S
+0.05
0.22 –0.04
0.08 S
0.65
(Unit : mm)
<Tape and Reel information>
Tape
Embossed carrier tape
Quantity
3000pcs
Direction
of feed
TR
The direction is the 1pin of product is at the upper right when you hold
( reel on the left hand and you pull out the tape on the right hand
)
1pin
Direction of feed
Reel
www.rohm.com
©2013 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
∗ Order quantity needs to be multiple of the minimum quantity.
27/29
TSZ02201-0R1R0G100150-1-2
6.Nov.2013 Rev.003
Datasheet
BR93Axx-WM (1K 2K 4K 8K 16K)
●Marking Diagrams
SOP8(TOP VIEW)
TSSOP-B8(TOP VIEW)
SOP-J8(TOP VIEW)
Part Number Marking
Part Number Marking
LOT Number
LOT Number
1PIN MARK
1PIN MARK
Part Number Marking
MSOP8(TOP VIEW)
Part Number Marking
LOT Number
LOT Number
1PIN MARK
1PIN MARK
●Marking Information
Capacity
1K
2K
4K
8K
16k
Product
Name
Marking
A46
RA46
A46
RA46
RA46
RA46
A56
RA56
A56
RA56
RA56
RA56
A66
RA66
A66
RA66
RA66
RA66
A76
RA76
A76
RA76
RA76
RA76
A86
RA86
A86
RA86
RA86
RA86
www.rohm.com
©2013 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
Package Type
SOP8
SOP-J8
TSSOP-B8
MSOP8
SOP8
SOP-J8
TSSOP-B8
MSOP8
SOP8
SOP-J8
TSSOP-B8
MSOP8
SOP8
SOP-J8
TSSOP-B8
MSOP8
SOP8
SOP-J8
TSSOP-B8
MSOP8
28/29
TSZ02201-0R1R0G100150-1-2
6.Nov.2013 Rev.003
Datasheet
BR93Axx-WM (1K 2K 4K 8K 16K)
●Revision History
Date
Revision
Changes
31.Aug.2012
001
New Release
4.Mar.2013
002
6.Nov.2013
003
P.2 Add a Endurance limit at 60℃
P.1 Added AEC-Q100 Qualified
P.2 Changed Unit of Pd
P.23 Update Product Code Description
www.rohm.com
©2013 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
29/29
TSZ02201-0R1R0G100150-1-2
6.Nov.2013 Rev.003
Datasheet
Notice
Precaution on using ROHM Products
1.
If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1),
aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,
bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales
representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any
ROHM’s Products for Specific Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅣ
CLASSⅢ
2.
ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3.
Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.
Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the
use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our
Products under any special or extraordinary environments or conditions (as exemplified below), your independent
verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4.
The Products are not subject to radiation-proof design.
5.
Please verify and confirm characteristics of the final or mounted products in using the Products.
6.
In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7.
De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual
ambient temperature.
8.
Confirm that operation temperature is within the specified range described in the product specification.
9.
ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1.
When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2.
In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the
ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice - SS
© 2014 ROHM Co., Ltd. All rights reserved.
Rev.002
Datasheet
Precautions Regarding Application Examples and External Circuits
1.
If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2.
You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1.
Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2.
Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3.
Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4.
Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
QR code printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since our Products might fall under controlled goods prescribed by the applicable foreign exchange and foreign trade act,
please consult with ROHM representative in case of export.
Precaution Regarding Intellectual Property Rights
1.
All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data. ROHM shall not be in any way responsible or liable
for infringement of any intellectual property rights or other damages arising from use of such information or data.:
2.
No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the information contained in this document.
Other Precaution
1.
This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2.
The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3.
In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4.
The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice - SS
© 2014 ROHM Co., Ltd. All rights reserved.
Rev.002
Datasheet
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3.
The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or
concerning such information.
Notice – WE
© 2014 ROHM Co., Ltd. All rights reserved.
Rev.001
Datasheet
BR93A46F-WM - Web Page
Buy
Distribution Inventory
Part Number
Package
Unit Quantity
Minimum Package Quantity
Packing Type
Constitution Materials List
RoHS
BR93A46F-WM
SOP8
2500
2500
Taping
inquiry
Yes