tSsmi-Gonau.cko'i iPioaucti, Dna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 378-8960 BFR94A NPN 3.5 GHz wideband transistor DESCRIPTION PINNING NPN resistance-stabilized transistor in a SOT122E capstan envelope. PIN 1 It features extremely low cross modulation, intermodulation and second order intermodulation distortion. Due to Its high transition frequency, it has a high power gain, in conjunction with good wideband properties, and low noise up to high frequencies. 2 3 4 DESCRIPTION collector emitter base emitter It is primarily intended for CATV and MATV applications. The BFR94A is a replacement for the BFH94. The SOT122E footprint is similar to that of the SOT48, used fortheBFR94. Fig,1 SOT122E, QUICK REFERENCE DATA PARAMETER SYMBOL 'o P» fr collector-base voltage collector-emitter voltage DC collector current total power dissipation transition frequency F noise figure cL intermodulation distortion <** second order intermodulation distortion VCBO VC60 CONDfTIONS TYP. uptoT e =145' 5 C;f>l MHz lc = 90 mA; VC6 - 20 V; f - 500 MHz; 3.5 ^ = 25 "C I0 = 90 mA: VCE = 20 V; f = 200 MHz; 8 T^,.2B-C lc = 90 mA; Vcj = 20 V; -63 V0 = 60 dBmV; f^,, = 194.25 MHz lc = 90 mA; VCE = 20 V; — V0 m 48 dBmV; fp + fq = 210 MHz open emitter open base MAX. 30 UNIT V 25 V 150 mA 3.S W - GHz 10 dB — dB -56 dB LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). PARAMETER SYMBOL VCBO VOEO VCER VEBO lc ICM P« T-, T. collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage DC collector current peak collector current total power dissipation storage temperature junction temperature CONDITIONS open emitter open base RBE- 100 £i open collector f > 1 MHz u p t o T c = 1 4 5 ° C ; f > 1 MHz MIN. MAX. UNIT _ 30 _ 25 V 35 IV V - 3 V - 150 mA - 300 - 3.5 -65 200 mA W DC - 200 r^r- THERMAL RESISTANCE PARAMETER SYMBOL '"'ifll-C thermal resistance from junction to case Quality Semi-Conductors THERMAL RESISTANCE 15K/W CHARACTERISTICS Tj = 25 "C unless otherwise specified. SYMBOL PARAMETER ICBO hfE collector cut-off currant DC current gain fT transition frequency C0 C. c. Co GUM F dnn 4 Vo collector capacitance emitter capacitance feedback capacitance collector-stud capacitance maximum unilateral power gain (note 1) noise figure intermodulatlon distortion second order intermodulatlon distortion output voltage CONDITIONS MIN. IE = 0;VC8 = 20V I0 = 50 mA; VCE = 20 V 30 lc=150mA;VOE = 20V 30 lc - 90 mA; VeE = 20 V; f - 500 MHz l c =150mA;V OE = 20V; — f- 500 MHz IE = I. - 0; VCB = 20 V; f = 1 MHz I0 = Ig - °; VEB - 0.6 V; f - 1 MHz lc - 10 mA; VOE = 20 V; f - 1 MHz f = 1 MHz lc = 90 mA; VOE = 20 V; — f=500MHz;T jmb =25°C lc = 90 mA; VOE - 20 V; — f= 200 MHz; !„„„=. 25 °C lc = 90 mA; VOE = 20 V; — f»500MHz;TBT,b = 25°C note 2 note 3 — see Fig. 2 and note 4 - TYP. MAX. UNIT - 50 _. - 3.5 - 3.5 — 3.5 - 12 - MA GHz GHz PF PF 1.3 - 2 - 13.5 — PF PF dB 8 10 dB 5 — dB -63 - — -56 dB dB 700 - mV Notes 1. GUM is ths maximum unilateral power gain, assuming S12 is zero and GUM = 10 log • 2. I0 = 90 mA; VCE = 20 V; RL » 75 fl; Vp = V0 = 60 dBmV at fp - 1 96.25 MHz; V, = V0 -6 dB at f, = 203.25 MHz; Vr = V0 -6 dB at f, * 205.25 MHz; measured at f(pH^ = 194.25 MHz. 3. lc = 90 mA; VCB = 20 V; fp = 66 MHz; fq = 144 MHz; f,, 4- f, = 210 MHz; Vo » 48 dBmV. 4. d^ = -60 dB (DIN 45004B); lc - 90 mA; VCE - 20 V; RL « 75 O; T,^ = 25 °C; Vp = V0 at dh, * -60 dB; fp = 495.25 MHz; V, - V0 -« dB; f, - 503.25 MHz; Vr - V0 -6 dB; f, = 505.25 MHz; measured at fIMUt = 493.25 MHz. - foi,!' > (i - dB.