ACPM-5817 Reliability Data Sheet Description Reliability Prediction Model This document describes the reliability performance of a fully matched 10-pins surface mount module ACPM-5817 developed for LTE Band-12 and Band-17. It was qualified by similarity based on similar product design, wafer fabrication technology and packaging process. This power amplifier module operates in 699-716 MHz bandwidth and meets stringent LTE (MPR=0dB) linearity requirements up to 27.5dBm output power. An exponential cumulative failure function (constant fail¬ure rate) model was used to predict the failure rate and mean time to failure (MTTF). The wear-out mechanism is therefore not considered. The Arrhenius temperature de-rating equation is used. It is assumed that no failure mechanism changes between stresses and the use condi¬tions. Bias and temperature condition are alterable stress¬es and must be considered with the thermal resistance of the devices when determining the stress condition. The failure rate will have a direct relationship to the bias life stress. The HBT have been tested to determine the activa¬tion energy of 1.58eV and was used to predict the MTTF and FIT rate for the HBT. Confidence intervals are based upon the chi-squared prediction method associated with exponential distribution. This product is packaged in a standard 3mmx3mm form factor package incorporated with 50ohm input and output matching network where the mechanical test results were leveraged on a representative part, ACPM-5308. The power amplifier is manufactured on an advanced InGaP HBT (hetero-junction Bipolar Transistor) MMIC (microwave monolithic integrated circuit) technology offering state-of-the-art reliability, temperature stability and ruggedness. Table 1. Life Prediction: Demonstrated Performance Test Name Stress Test Condition Total Units Tested Total Device Hours No. Of Failed Units DC-High Temperature Operating Life (DC-HTOL) Ta=125°C; Vcc=3.4V, Ven=1.8V, Vmode=0V (HP); RF ports into 50 Ω. JESD22-A108 75 37,800 0/75 Table 2. Estimated for Various Channel Temperatures are as follows: Channel Temp. (C) Point Typical Performance 90% Confidence MTTF MTTF (yrs) (yrs) Point Typical Performance FIT 90% Confidence FIT 125 10.54 4.57 10,828.26 24,959.14 100 231.01 100.22 493.81 1,138.23 85 1,811.91 786.08 62.96 145.12 60 84,731.92 36,760.05 1.35 3.1 Point typical MTTF is simply the total device hours divided by the number of failures. Since no failures were observed, the point estimate is calculated under the assumption that one unit failed. FIT rates shown are relatively high due to the limited device hours at product release. Table 3. Operating Life Test Results: Stress Reference & Conditions Duration Failures/ number tested DC-High Temperature Operating Life (DC-HTOL) Ta=125°C; Vcc=3.4V, Ven=1.8V, Vmode=0V (HP), RF ports into 50 Ω. JESD22-A108 504 hours 0/75 Temperature Humidity Operating Life (DC-WHTOL) Ta=85°C/85%RH; (HPM/Off/MPM/Off ) Vcc=4.2V, Ven=2.6V/0V, Vmode=2.6V/0V, RF ports into 50 Ω. JESD22-A101 504 hours 0/75 Table 4. Environmental Test Results: Stress Reference & Conditions Duration Failures/ number tested High Temperature Storage Ta=150°C JESD22-A103 504 hours 0/75 Unbiased Highly Accelerated Temperature and Humidity Stress Ta=130°C/85%RH, 230kPa, No Bias JESD22-A118 96 hours 0/75 Temperature Cycling Condition B: -55°C/+125°C, 15mins dwell, Air to Air. JESD22-A104 700 cycles 0/75 Table 5. Mechanical Tests Information: Stress Reference & Conditions Duration Failures/ number tested Auto Drop Test Peak acceleration: 1500Gs. Pulse duration: 0.5ms half-sine pulse. JESD22-B111 30 drops 0/60 Cycle Bending Amplitude 1.0mm, total displacement 2.0mm. Bending rate 80mm per minute. 5x 0/30 Bending Test Bending up to 5mm with 1mm increment. Maintained in bend state for 5s ± 1s for every 1mm increment. IEC 60068-2-21-Ue1 Every 1mm 0/30 Shear Test Force = 10N, 60 sec 4 sides 0/30 Note: All mechanical tests are tested on daisy chain device. Table 6. Thermal Resistance Information: Stress Reference & Conditions Theta Jc Thermal Resistance Vcc1=3.8V, Vcc2=3.4V, Ven=1.35V, Vmode=0.5V; Pout : 27.5dBm 15 ºC/W ESD Test Reference: Results Human Body Model JESD22-A114 1500V (Class 1C) Machine Model JESD22-A115 100V (Class A) Charge Device Model JESD22-C101 500V (Class III) Table 7. ESD Ratings: 2 HBM Handling precautions Class 0 is ESD voltage level < 250V, Class 1A is voltage level between 250V and 500V, Class 1B is voltage level between 500V and 1000V, Class 1C is voltage level between 1000V and 2000V, Class 2 is voltage level between 2000V and 4000V, Class 3A is voltage level between 4000V and 8000V, Class 3B is voltage level > 8000V. Note: ESD sensitivity levels for Human Body Model, Machine Model and Charge Device Model necessitate the following handling precautions: MM Class A is ESD voltage level < 200V, Class B is voltage level between 200V and 400V, Class C is voltage level > 400V. CDM Class I is ESD voltage level < 200V, Class II is voltage level between 200V and 500V, Class III is voltage level between 500V and 1000V, Class IV is voltage level >1000V. 1. Ensure Faraday cage or conductive shield is used during transportation processes. 2. If the static charge at SMT assembly station is above device sensitivity level, place an ionizer near to the device for charge neutralization purposes. 3. Personal grounding must be worn at all time when handling the device. Moisture Sensitivity Classification: Level 3 Preconditioning per JESD22-A113D Level 3 was performed on all devices prior to reliability testing except for ESD classification test and mechanical test. MSL 3 Preconditioning, Accelerated condition (JESD22A113D): 125°C HTS for 24hrs + 60°C/60%RH for 40hrs + 3x Pb-free Reflow, 260°C peak. For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright © 2005-2012 Avago Technologies. All rights reserved. AV02-3813EN - September 14, 2012