CREE C450TR3041-SXX00 Rectangular led rf performance low forward voltage - 3.2 v typical at 20 ma Datasheet

TR300™ LEDs
CxxxTR3041-Sxx00
Data Sheet
Cree’s TR™ LEDs are the newest generation of solid-state LED emitters that combine highly efficient InGaN materials
with Cree’s proprietary device technology and silicon carbide substrates to deliver superior value for the LCD sideview
market. The TR LEDs are among the brightest in the sideview market while delivering a low forward voltage resulting in
a very bright and highly efficient solution for the 0.6-mm and 0.8-mm sideview market. The design is optimally suited
for industry standard sideview packages as it is die attachable with clear epoxy and has two top contacts, consistent
with industry standard packaging.
FEATURES
APPLICATIONS
•
•
Rectangular LED Rf Performance
−
450 & 460 nm
�
Small LCD Backlighting – 0.8 mm & 0.6 mm
sideview packages
TR-30™ – 30 mW min.
−
Mobile Appliances
•
Epoxy Die Attach
−
Digital Cameras
•
Low Forward Voltage - 3.2 V Typical at 20 mA
−
Car Navigation Systems
•
1000-V ESD Threshold Rating
•
InGaN Junction on Thermally Conductive SiC
Substrate
•
Medium LCD Backlighting – 0.8 mm & 0.6 mm
sideview packages
−
Portable PCs
−
Monitors
•
LED Video Displays
•
General Illumination
CxxxTR3041-Sxx00 Chip Diagram
Bottom View
.CPR3DV Rev
Data Sheet:
Top View
Die Cross Section
Backside
Anode (+)
80 μm diameter
TR300 LED
300 x 410 μm
Cathode (-)
98 x 98 μm
Bottom Surface
155 x 265 μm
t = 140 μm
Subject to change without notice.
www.cree.com
1
Maximum Ratings at TA = 25°C Notes 1&3
CxxxTR3041-Sxx00
DC Forward Current
50 mA
Peak Forward Current (1/10 duty cycle @ 1 kHz)
100 mA
LED Junction Temperature
125°C
Reverse Voltage
5V
Operating Temperature Range
-40°C to +100°C
Storage Temperature Range
Electrostatic Discharge Threshold (HBM)
-40°C to +100°C
1000 V
Note 2
Electrostatic Discharge Classification (MIL-STD-883E)
Class 2
Note 2
Typical Electrical/Optical Characteristics at TA = 25°C, If = 20 mA
Part Number
Forward Voltage (Vf, V)
Note 3
Reverse Current
[I(Vr=5V), μA]
Full Width Half Max
(λD, nm)
Min.
Typ.
Max.
Max.
Typ.
C450TR3041-Sxx00
2.7
3.2
3.7
2
20
C460TR3041-Sxx00
2.7
3.2
3.7
2
21
Mechanical Specifications
Description
CxxxTR3041-Sxx00
Dimension
Tolerance
P-N Junction Area (μm)
260 x 370
±35
Chip Area (μm)
300 x 410
±35
140
±15
Au Bond Pad Diameter Anode (μm)
80
-5, +15
Au Bond Pad Thicknesses (μm)
1.0
±0.5
98 x 98
-5, +15
155 x 265
±35
Chip Thickness (μm)
Au Bond Pad Area Cathode (μm)
Bottom Area (μm)
Notes:
1.
2.
3.
Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy
encapsulation and clear epoxy die attach) for characterization. Ratings for other packages may differ. The forward currents (DC
and Peak) are not limited by the die but by the effect of the LED junction temperature on the package. The junction temperature
limit of 125°C is a limit of the T-1 3/4 package; junction temperature should be characterized in a specific package to determine
limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds).
Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche
energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown.
All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given
are within the range of average values expected by manufacturer in large quantities and are provided for information only. All
measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy encapsulant and clear epoxy die attach).
Optical characteristics measured in an integrating sphere using Illuminance E.
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and TR, TR30 and TR300 are trademarks of Cree, Inc.
2
CPR3DV Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Standard Bins for CxxxTR3041-Sxx00
LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from
only one bin. Sorted die kit (CxxxTR3041-Sxxxx) orders may be filled with any or all bins (CxxxTR3041-xxxx) contained
in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 20 mA.
TR-30
Radiant Flux
C450TR3041-S3000
C450TR3041-0209
C450TR3041-0210
C450TR3041-0211
C450TR3041-0212
C450TR3041-0205
C450TR3041-0206
C450TR3041-0207
C450TR3041-0208
C450TR3041-0201
C450TR3041-0202
C450TR3041-0203
C450TR3041-0204
35.0 mW
33.0 mW
30.0 mW
445 nm
447.5 nm
450 nm
452.5 nm
455 nm
Dominant Wavelength
TR-30
Radiant Flux
C460TR3041-S3000
C460TR3041-0209
C460TR3041-0210
C460TR3041-0211
C460TR3041-0212
C460TR3041-0205
C460TR3041-0206
C460TR3041-0207
C460TR3041-0208
C460TR3041-0201
C460TR3041-0202
C460TR3041-0203
C460TR3041-0204
35.0 mW
33.0 mW
30.0 mW
455 nm
457.5 nm
460 nm
462.5 nm
465 nm
Dominant Wavelength
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and TR, TR30 and TR300 are trademarks of Cree, Inc.
3
CPR3DV Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
0.50
0.00
0
10
20
30
40
50
If (mA)
Characteristic Curves
These are representative measurements for the TR LED product. Actual curves will vary slightly for the various radiant
flux and dominant wavelength bins.
Forward Current vs. Forward Voltage
Wavelength Shift vs. Forward Current
1.50
50
1.00
40
Shift (nm)
If (mA)
0.50
30
20
0.00
-0.50
-1.00
10
-1.50
0
0
1
2
3
4
5
-2.00
0
10
20
30
Characterization
40
50
If (mA)
Vf (V)
Relative Intensity vs Peak Wavelength
Relative Intensity vs Peak Wavelength
Relative Intensity vs. Forward Current
2.50
220
120
200
100
1.50
1.00
0.50
180
% Relative Intensity
Relative Intensity (%)
% Intensity
2.00
80
60
40
0
10
20
30
40
50
If (mA)
320
420
520
620
If (mA)
30
20
10
Copyright0 © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and TR, TR30 and TR300 are trademarks of Cree, Inc.
2
3
Vf (V)
60
0
p
40
1
80
Wavelength (nm)
Forward Current vs. Forward Voltage
CPR3DV Rev. -
100
0
0
50
0
120
20
Copyright © 2007, Cree, Inc.
4
140
40
20
0.00
160
4
5
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Radiation Pattern
This is a representative radiation pattern for the TR LED product. Actual patterns will vary slightly for each chip.
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and TR, TR30 and TR300 are trademarks of Cree, Inc.
5
CPR3DV Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
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