SPICE Device Model Si2343CDS Vishay Siliconix P-Channel 30 V (D-S) MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C to + 125 °C temperature ranges under the pulsed 0 V to 10 V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage. A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device. • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to + 125 °C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics SUBCIRCUIT MODEL SCHEMATIC D CGD R1 3 M2 Gy G RG + – ETCV Gx CGS DBD M1 S Note This document is intended as a SPICE modeling guideline and does not constitute a commercial product datasheet. Designers should refer to the appropriate datasheet of the same number for guaranteed specification limits. Document Number: 66545 S10-0753-Rev. A, 05-Apr-10 www.vishay.com 1 SPICE Device Model Si2343CDS Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS SIMULATED MEASURED DATA DATA UNIT Static Gate-Source Threshold Voltage Drain-Source On-State Resistancea VGS(th) RDS(on) VDS = VGS, ID = - 250 μA 1.9 - VGS = - 10 V, ID = - 4.2 A 0.040 0.037 VGS = - 4.5 V, ID = - 3.2 A 0.061 0.062 V Forward Transconductancea gfs VDS = - 15 V, ID = - 4.2 A 9 10 S Diode Forward Voltage VSD IS = - 3.3 A - 0.85 - 0.80 V 585 590 114 115 87 93 13 13.6 Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = - 15 V, VGS = 0 V, f = 1 MHz VDS = - 15 V, VGS = - 10 V, ID = - 4.2 A VDS = - 15 V, VGS = - 4.5 V, ID = - 4.2 A 6.4 7 2.3 2.3 3.2 3.2 pF nC Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 66545 S10-0753-Rev. A, 05-Apr-10 SPICE Device Model Si2343CDS Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA TJ = 25 °C, unless otherwise noted 25 3.0 TJ = 125 °C 2.4 VGS = 10 V, 7 V, 6 V, 5 V ID - Drain Current (A) ID - Drain Current (A) 20 15 VGS = 4 V 10 5 1.8 TJ = 25 °C 1.2 0.6 VGS = 3 V TJ = - 55 °C 0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 0 3.0 1 0.10 1000 0.08 800 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 2 3 4 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 0.06 VGS = 4.5 V 0.04 VGS = 10 V Ciss 600 400 200 0.02 Coss Crss 0 0.00 0 5 10 15 20 25 0 ID - Drain Current (A) 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) 100 10 8 VDS = 15 V IS - Source Current (A) VGS - Gate-to-Source Voltage (V) ID = 4.2 A 6 VDS = 24 V 4 TJ = 150 °C 10 TJ = 25 °C 1 2 0.1 0 0 3 6 9 Qg - Total Gate Charge (nC) 12 15 0 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) Note Dots and squares represent measured data. Document Number: 66545 S10-0753-Rev. A, 05-Apr-10 www.vishay.com 3 SPICE Device Model Si2343CDS Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA TJ = 25 °C, unless otherwise noted 1.7 0.10 ID = 4.2 A ID = 4.2 A RDS(on) - On-Resistance (Ω) RDS(on) - On-Resistance Normalized 1.5 1.3 1.1 VGS = 4.5 V, 2.5 V 0.08 TJ = 125 °C 0.06 0.04 0.9 0.7 - 50 TJ = 25 °C 0.02 - 25 0 25 50 75 100 TJ - Junction Temperature (°C) 125 150 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Note Dots and squares represent measured data. www.vishay.com 4 Document Number: 66545 S10-0753-Rev. A, 05-Apr-10 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1