Semipower ES1GW Surface mount superfast recovery rectifier Datasheet

ES1AW THRU ES1JW
Surface Mount Superfast Recovery Rectifier
Reverse Voltage – 50 to 600 V
PINNING
Forward Current – 1 A
PIN
FEATURES
• Easy pick and place
• For surface mounted applications
• Low profile package
• Built-in strain relief
• Superfast recovery times for high efficiency
DESCRIPTION
1
Cathode
2
Anode
1
2
Simplified outline SOD-123FL and symbol
MECHANICAL DATA
• Case: SOD-123FL
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight:15mg 0.00053oz
Absolute Maximum Ratings and Characteristics
Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Symbols
Parameter
ES1AW ES1BW
ES1CW ES1DW
ES1EW ES1GW
ES1JW
Units
Maximum Repetitive Peak Reverse Voltage
V RRM
50
100
150
200
300
400
600
V
Maximum RMS voltage
V RMS
35
70
105
140
210
280
420
V
Maximum DC Blocking Voltage
V DC
50
100
150
200
300
400
600
V
Maximum Average Forward Rectified Current
at T c = 125 °C
I F(AV)
1
A
Peak Forward Surge Current 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
I FSM
30
A
Maximum Forward Voltage at 1 A
VF
Maximum DC Reverse Current
T a = 25 °C
at Rated DC Blocking Voltage
T a =125 °C
Typical Junction Capacitance
at V R =4V, f=1MHz
Maximum Reverse Recovery Time
(1)
Typical Thermal Resistance (2)
Operating and Storage Temperature Range
1.25
1
1.68
V
IR
5
100
μA
Cj
15
pF
t rr
35
ns
RθJA
85
°C/W
T j , T stg
-55 ~ +150
°C
(1)Measured with I F = 0.5 A, I R = 1 A, I rr = 0.25 A .
(2)P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
2016 Rev 1.0
Page 1 of 3
ES1AW THRU ES1JW
Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram
50 ohm
Noninductive
t rr
10 ohm
Noninductive
+0.5
D.U.T
+
PULSE
GENERATOR
Note 2
25Vdc
approx
0
-
-0.25
1 ohm
NonInductive
OSCILLOSCOPE
Note 1
-1.0
Note:1.Rise Time = 7ns, max.
Input Impedance = 1megohm,22pF.
2. Ries Time =10ns, max.
Source Impedance = 50 ohms.
10ns/div
Set time Base for 10ns/div
Fig.3 Typical Reverse Characteristics
300
1.2
1.0
I R - Reverse Current ( μ A)
Average Forward Current (A)
Fig.2 Maximum Average Forward Current Rating
0.8
0.6
0.4
0.2
Single phase half-wave 60 Hz
resistive or inductive load
100
T J =125°C
10
T J =75°C
1.0
T J =25°C
0.1
0.0
25
50
75
100
125
150
175
40
20
0
Case Temperature (°C)
T J =25°C
1.0
ES1AW~ES1DW
ES1EW/ES1GW
0.1
100
Fig.5 Typical Junction Capacitance
Junction Capacitance ( pF)
Instaneous Forward Current (A)
Fig.4 Typical Forward Characteristics
10
80
60
% of PIV.VOLTS
ES1JW
0.01
100
10
T J=25°C
f = 1.0MHz
V sig = 50mV p-p
1
0.001
0
0.5
1.5
1.0
2.0
2.5
Instaneous Forward Voltage (V)
0.1
1.0
10
100
Reverse Voltage (V)
Peak Forward Surage Current (A)
Fig.6 Maximum Non-Repetitive Peak
Forward Surage Current
35
30
25
20
15
10
05
8.3 ms Single Half Sine Wave
(JEDEC Method)
00
1
10
100
Number of Cycles
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
2016 Rev 1.0
Page 2 of 3
ES1AW THRU ES1JW
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD-123FL
∠ALL ROUND
C
A
∠ALL ROUND
VM
D
E
A
g
Top View
mil
Bottom View
A
C
D
E
e
g
HE
max
1.1
0.20
2.9
1.9
1.1
0.9
3.8
min
0.9
0.12
2.6
1.7
0.8
0.7
3.5
max
43
7.9
114
75
43
35
150
min
35
4.7
102
67
31
28
138
UNIT
mm
g
pad
e
E
A
pad
HE
7°
The recommended mounting pad size
Marking
Type number
1.2
(47)
∠
2.0
(79)
Marking code
ES1AW
1.2
(47)
ES1BW
ESL
1.2
(47)
ES1CW
ES1DW
ES1EW
ESM
ES1GW
Unit: mm
(mil)
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
ES1JW
2016 Rev 1.0
ESH
Page 3 of 3
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