Fairchild FAN7371 High-current high-side gate drive ic Datasheet

FAN7371
High-Current High-Side Gate Drive IC
Features
Description
„ Floating Channel for Bootstrap Operation to +600V
The FAN7371 is a monolithic high-side gate drive IC,
which can drive high-speed MOSFETs and IGBTs that
operate up to +600V. It has a buffered output stage with
all NMOS transistors designed for high pulse current
driving capability and minimum cross-conduction.
„ 4A/4A Sourcing/Sinking Current Driving Capability
„ Common-Mode dv/dt Noise Canceling Circuit
„ 3.3V and 5V Input Logic Compatible
„ Output In-phase with Input Signal
„ 8-Lead Small Outline Package (SOP)
Fairchild’s high-voltage process and common-mode
noise canceling techniques provide stable operation of
the high-side driver under high dv/dt noise circumstances. An advanced level-shift circuit offers high-side
gate driver operation up to VS=-9.8V (typical) for
VBS=15V.
Applications
The UVLO circuit prevents malfunction when VBS is
lower than the specified threshold voltage.
„ Under- Voltage Lockout for VBS
„ 25V Shunt Regulator on VDD and VBS
„ High-Speed Gate Driver
The high-current and low-output voltage drop feature
makes this device suitable for sustain and energy
recovery circuit switches driver in the Plasma Display
Panel application, motor drive inverter, switching power
supply, and high-power DC-DC converter applications.
„ Sustain Switch Driver in PDP Application
„ Energy-Recovery Circuit Switch Driver in
PDP Application
„ High-Power Buck Converter
„ Motor Drive Inverter
8-SOP
Ordering Information
Part Number
FAN7371M
Package
Pb-Free
8-SOP
Yes
Operating Temperature Range Packing Method
FAN7371MX
Note:
1
These devices passed wave soldering test by JESD22A-111.
© 2007 Fairchild Semiconductor Corporation
FAN7371 Rev. 1.0.1
-40°C ~ 125°C
TUBE
TAPE & REEL
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FAN7371 — High-Current High-Side Gate Drive IC
October 2007
15V
DBOOT3
VS
15V
FAN7371
RBOOT1
DBOOT1
8 VB
Q3
1
VDD
2
IN
VB
8
HO
7
VS
6
NC
5
3 NC
4 GND
R4
IN2
C1
IN
6
VS
NC 3
5
NC
8
IN
HO
7
3 NC
VS
6
NC
5
2
IN3
GND 4
D4
R1
To Pannel
R2
Q1
VB
2
7
D2
D1
FAN7371
VDD
CBOOT3
VDD 1
HO
L1
CBOOT1
DBOOT2
1
R3
D3
FAN7371
IN1
RBOOT3
FAN7371
8 VB
Q2
R5
Q4
R7
HO
IN
6
VS
NC 3
5
NC
CBOOT2
R6
VDD 1
7
2
IN4
C3
R8
4 GND
GND 4
C2
Energy Recovery Circuit Part
Sustain Drive Part
FAN7371 Rev.03
Figure 1. Floated Bidirectional Switch and Half-Bridge Driver: PDP application
VIN
15V
RBOOT
DBOOT
FAN7371
1 VDD
2 IN
PWM
VB 8
HO
R1
7
CBOOT
C1
3 NC
4 GND
L1
R2
VS 6
NC
5
C2
D1
VOUT
FAN7371 Rev.01
Figure 2. Step-Down (Buck) DC-DC Converter Application
© 2007 Fairchild Semiconductor Corporation
FAN7371 Rev. 1.0.1
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2
FAN7371 — High-Current High-Side Gate Drive IC
Typical Application Diagrams
1
VDD
25V
GND
UVLO
4
PULSE
GENERATOR
2
IN
110K
NOISE
CANCELLER
R
R
S
Q
Shoot-through current
compensated gate driver
VDD
8
VB
7
HO
6
VS
25V
Pins 3 and 5 are no connection.
FAN7371 Rev.04
Figure 3. Functional Block Diagram
Pin Configuration
VDD
1
IN
2
NC
3
GND
4
FAN7371
8
VB
7
HO
6
VS
5
NC
FAN7371 Rev.01
Figure 4. Pin Configuration (Top View)
Pin Definitions
Pin #
Name
Description
1
VDD
2
IN
Logic Input for High-Side Gate Driver Output
3
NC
No Connection
4
GND
5
NC
No Connection
6
VS
High-Voltage Floating Supply Return
7
HO
High-Side Driver Output
8
VB
High-Side Floating Supply
Supply Voltage
Ground
© 2007 Fairchild Semiconductor Corporation
FAN7371 Rev. 1.0.1
www.fairchildsemi.com
3
FAN7371 — High-Current High-Side Gate Drive IC
Internal Block Diagram
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. TA=25°C unless otherwise specified.
Symbol
Characteristics
VS
High-Side Floating Offset Voltage
VB
High-Side Floating Supply Voltage(2)
VHO
VDD
High-Side Floating Output Voltage
Low-Side and Logic Supply Voltage
(2)
Max.
Unit
VB-VSHUNT
VB+0.3
V
-0.3
625.0
V
VS-0.3
VB+0.3
V
-0.3
VSHUNT
V
-0.3
VDD+0.3
V
Allowable Offset Voltage Slew Rate
± 50
V/ns
PD
Power Dissipation(3, 4, 5)
0.625
W
θJA
Thermal Resistance
200
°C/W
150
°C
150
°C
VIN
dVS/dt
Logic Input Voltage
Min.
TJMAX
Maximum Junction Temperature
TSTG
Storage Temperature
-55
Notes:
2
3
4
5
This IC contains a shunt regulator on VDD and VBS with a normal breakdown voltage of 25V. Please note that this
supply pin should not be driven by a low-impedance voltage source greater than the VSHUNT specified in the
Electrical Characteristics section
Mounted on 76.2 x 114.3 x 1.6mm PCB (FR-4 glass epoxy material).
Refer to the following standards:
JESD51-2: Integral circuits thermal test method environmental conditions, natural convection, and
JESD51-3: Low effective thermal conductivity test board for leaded surface mount packages.
Do not exceed power dissipation (PD) under any circumstances.
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to absolute maximum ratings.
Symbol
Parameter
Min.
Max.
Unit
VB
High-Side Floating Supply Voltage
VS+10
VS+20
V
VS
High-Side Floating Supply Offset Voltage
6-VDD
600
V
VS
VB
V
GND
VDD
V
VHO
High-Side Output Voltage
VIN
Logic Input Voltage
VDD
Supply Voltage
10
20
V
Operating Ambient Temperature
-40
125
°C
TA
© 2007 Fairchild Semiconductor Corporation
FAN7371 Rev. 1.0.1
www.fairchildsemi.com
4
FAN7371 — High-Current High-Side Gate Drive IC
Absolute Maximum Ratings
VBIAS(VDD, VBS)=15.0V, TA = 25°C, unless otherwise specified. The VIN and IIN parameters are referenced to GND.
The VO and IO parameters are relative to VS and are applicable to the respective output HO.
Symbol
Characteristics
Test Condition
Min. Typ. Max. Unit
POWER SUPPLY SECTION
IQDD
Quiescent VDD Supply Current
VIN=0V or 5V
25
70
μA
IPDD
Operating VDD Supply Current
fIN=20KHz, No Load
35
100
μA
BOOTSTRAPPED SUPPLY SECTION
VBSUV+
VBS Supply Under-Voltage Positive Going
Threshold Voltage
VIN=0V, VBS=Sweep
8.2
9.2
10.2
V
VBSUV-
VBS Supply Under-Voltage Negative Going
VIN=0V, VBS=Sweep
Threshold Voltage
7.5
8.5
9.5
V
VBSHYS
VBS Supply Under-Voltage Lockout
Hysteresis Voltage
VIN=0V, VBS=Sweep
ILK
Offset Supply Leakage Current
VB=VS=600V
IQBS
Quiescent VBS Supply Current
VIN=0V or 5V
Operating VBS Supply Current
CLOAD=1000pF, fIN=20KHz, rms
value
IPBS
0.7
V
10
μA
60
120
μA
1.0
2.8
mA
SHUNT REGULATOR SECTION
VSHUNT
VDD and VBS Shunt Regulator Clamping
Voltage
ISHUNT=5mA
24
25
V
INPUT LOGIC Section
VIH
Logic “1” Input Voltage
VIL
Logic “0” Input Voltage
IIN+
Logic Input High Bias Current
VIN=5V
IIN-
Logic Input Low Bias Current
VIN=0V
RIN
Input Pull-down Resistance
2.5
V
45
70
0.8
V
70
μA
2
μA
110
KΩ
GATE DRIVER OUTPUT SECTION
VOH
High-Level Output Voltage (VBIAS - VO)
No Load
1.2
V
VOL
Low-Level Output Voltage
No Load
30
mV
IO+
Output High, Short-Circuit Pulsed Current(6) VHO=0V, VIN=5V, PW ≤10µs
3.0
4.0
A
IO-
Output Low, Short-Circuit Pulsed Current(6) VHO=15V,VIN=0V, PW ≤10µs
3.0
4.0
A
VS
Allowable Negative VS pin Voltage for IN
Signal Propagation to HO
-9.8
-7.0
V
Note:
6
These parameters guaranteed by design.
Dynamic Electrical Characteristics
VDD=VBS=15V, GND=0V, CLOAD=1000pF, TA=25°C, unless otherwise specified.
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
ton
Turn-on Propagation Delay Time
VS=0V
150
210
ns
toff
Turn-off Propagation Delay Time
VS=0V
150
210
ns
tr
Turn-on Rise Time
25
50
ns
tf
Turn-off Fall Time
15
40
ns
© 2007 Fairchild Semiconductor Corporation
FAN7371 Rev. 1.0.1
www.fairchildsemi.com
5
FAN7371 — High-Current High-Side Gate Drive IC
Electrical Characteristics
250
200
200
tOFF [ns]
tON [ns]
250
150
100
150
100
50
0
-40
50
-20
0
20
40
60
80
100
0
-40
120
-20
0
Temperature [°C]
50
50
40
40
30
30
20
20
10
10
-20
0
20
40
60
80
100
0
-40
120
-20
0
Temperature [°C]
100
120
20
40
60
80
100
120
2.0
80
1.5
IPBS [mA]
IPDD [μA]
80
Figure 8. Turn-off Fall Time vs. Temp.
100
60
40
1.0
0.5
20
-20
0
20
40
60
80
100
0.0
-40
120
Temperature [°C]
-20
0
20
40
60
80
100
120
Temperature [°C]
Figure 9. Operating VDD Supply Current vs. Temp.
Figure 10. Operating VBS Supply Current vs. Temp.
© 2007 Fairchild Semiconductor Corporation
FAN7371 Rev. 1.0.1
60
Temperature [°C]
Figure 7. Turn-on Rise Time vs. Temp.
0
-40
40
Figure 6. Turn-off Propagation Delay vs. Temp.
tF [ns]
tR [ns]
Figure 5. Turn-on Propagation Delay vs. Temp.
0
-40
20
Temperature [°C]
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6
FAN7371 — High-Current High-Side Gate Drive IC
Typical Characteristics
9.5
9.5
9.0
VBSUV- [V]
VBSUV+ [V]
10.0
9.0
8.5
8.0
8.5
8.0
-40
-20
0
20
40
60
80
100
7.5
-40
120
-20
0
Temperature [°C]
3.0
3.0
2.5
2.5
2.0
2.0
1.5
1.0
0.5
0.5
0
20
40
60
60
80
100
120
1.5
1.0
-20
40
Figure 12. VBS UVLO- vs. Temp.
VIL [V]
VIH [V]
Figure 11. VBS UVLO+ vs. Temp.
0.0
-40
20
Temperature [°C]
80
100
0.0
-40
120
-20
0
Temperature [°C]
20
40
60
80
100
120
Temperature [°C]
Figure 13. Logic High Input Voltage vs. Temp.
Figure 14. Logic Low Input Voltage vs. Temp.
280
1.50
240
1.25
VOH [V]
RIN [kΩ]
200
160
120
1.00
0.75
80
0.50
40
0.25
0
-40
-20
0
20
40
60
80
100
0.00
-40
120
Temperature [°C]
0
20
40
60
80
100
120
Temperature [°C]
Figure 15. Input Pull-down Resistance vs. Temp.
Figure 16. High-Level Output Voltage vs. Temp.
© 2007 Fairchild Semiconductor Corporation
FAN7371 Rev. 1.0.1
-20
www.fairchildsemi.com
7
FAN7371 — High-Current High-Side Gate Drive IC
Typical Characteristics (Continued)
6.5
6.0
6.0
5.5
5.5
5.0
5.0
IO- [A]
IO+ [A]
6.5
4.5
4.5
4.0
4.0
3.5
3.5
3.0
3.0
2.5
-40
-20
0
20
40
60
80
100
2.5
-40
120
-20
0
Temperature [°C]
7
7
6
6
5
5
4
4
3
3
12
14
16
40
60
80
100
120
Figure 18. Output Low, Short-Circuit Pulsed Current
vs. Temp.
IO- [A]
IO+ [A]
Figure 17. Output High, Short-Circuit Pulsed Current
vs. Temp.
2
10
20
Temperature [°C]
18
2
10
20
12
14
VBS [V]
16
18
20
VBS [V]
Figure 19. Output High, Short-Circuit Pulsed Current
vs. Supply Voltage
Figure 20. Output Low, Short-Circuit Pulsed Current
vs. Supply Voltage
80
120
100
40
25°C
25°C
60
125°C
40
125°C
20
-40°C
80
-40°C
IQBS [μA]
IQDD [μA]
60
20
0
10
12
14
16
18
0
10
20
Supply Voltage [V]
14
16
18
20
Supply Voltage [V]
Figure 21. Quiescent VDD Supply Current
vs. Supply Voltage
Figure 22. Quiescent VBS Supply Current
vs. Supply Voltage
© 2007 Fairchild Semiconductor Corporation
FAN7371 Rev. 1.0.1
12
www.fairchildsemi.com
8
FAN7371 — High-Current High-Side Gate Drive IC
Typical Characteristics (Continued)
Timing Diagram
15V
50%
VDD
10nF
VB
10µF
10µF
0.1µF
50%
IN
15V
VS
GND
ton
FAN7371
tr
toff
tf
1000pF
90%
90%
HO
IN
OUT
(A)
10%
10%
(B)
Figure 23. Switching Time Test Circuit and Waveform Definitions
© 2007 Fairchild Semiconductor Corporation
FAN7371 Rev. 1.0.1
www.fairchildsemi.com
9
FAN7371 — High-Current High-Side Gate Drive IC
Switching Time Definitions
5.00
4.80
A
0.65
3.81
8
5
B
6.20
5.80
PIN ONE
INDICATOR
1.75
4.00
3.80
1
5.60
4
1.27
(0.33)
0.25
M
1.27
C B A
LAND PATTERN RECOMMENDATION
SEE DETAIL A
0.25
0.10
1.75 MAX
0.25
0.19
C
0.10
0.51
0.33
0.50 x 45°
0.25
R0.10
C
OPTION A - BEVEL EDGE
GAGE PLANE
R0.10
OPTION B - NO BEVEL EDGE
0.36
NOTES: UNLESS OTHERWISE SPECIFIED
8°
0°
0.90
0.406
A) THIS PACKAGE CONFORMS TO JEDEC
MS-012, VARIATION AA, ISSUE C,
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE MOLD
FLASH OR BURRS.
D) LANDPATTERN STANDARD: SOIC127P600X175-8M.
E) DRAWING FILENAME: M08AREV13
SEATING PLANE
(1.04)
DETAIL A
SCALE: 2:1
Figure 24. 8-Lead Small Outline Package (SOP)
© 2007 Fairchild Semiconductor Corporation
FAN7371 Rev. 1.0.1
www.fairchildsemi.com
10
FAN7371 — High-Current High-Side Gate Drive IC
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
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which, (a) are intended for surgical implant into the body or
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when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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2. A critical component in any component of a life support,
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice to improve
design.
Obsolete
Not In Production
This datasheet contains specifications on a product that has been
discontinued by Fairchild Semiconductor. The datasheet is printed for
reference information only.
Rev. I31
© 2007 Fairchild Semiconductor Corporation
FAN7371 Rev. 1.0.1
www.fairchildsemi.com
11
FAN7371 — High-Current High-Side Gate Drive IC
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