BF908; BF908R Dual-gate MOS-FETs Rev. 03 — 14 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) [email protected] use [email protected] (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via [email protected]). Thank you for your cooperation and understanding, NXP Semiconductors NXP Semiconductors Product specification Dual-gate MOS-FETs BF908; BF908R FEATURES • High forward transfer admittance • Short channel transistor with high forward transfer admittance to input capacitance ratio d handbook, halfpage 4 3 g2 • Low noise gain controlled amplifier up to 1 GHz. g 1 APPLICATIONS • VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communications equipment. 1 2 s,b Top view MAM039 BF908 marking code: %M1. DESCRIPTION Fig.1 Depletion type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. Simplified outline (SOT143) and symbol; BF908. d handbook, halfpage 3 CAUTION 4 The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. g2 g1 PINNING 2 PIN SYMBOL DESCRIPTION 1 s, b 2 d drain 3 g2 gate 2 4 g1 gate 1 source 1 s,b Top view MAM040 BF908R marking code: %M2. Fig.2 Simplified outline (SOT143R) and symbol; BF908R. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VDS drain-source voltage − − 12 V ID drain current − − 40 mA Ptot total power dissipation − − 200 mW Tj operating junction temperature − − 150 °C yfs forward transfer admittance 36 43 50 mS Cig1-s input capacitance at gate 1 2.4 3.1 4 pF Crs reverse transfer capacitance f = 1 MHz 20 30 45 pF F noise figure f = 800 MHz − 1.5 2.5 dB Rev. 03 - 14 November 2007 2 of 9 NXP Semiconductors Product specification Dual-gate MOS-FETs BF908; BF908R LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 12 V ID drain current − 40 mA ±IG1 gate 1 current − 10 mA ±IG2 gate 2 current − 10 mA Ptot total power dissipation see Fig.3; note 1 BF908 up to Tamb = 50 °C − 200 mW BF908R up to Tamb = 40 °C − 200 mW Tstg storage temperature −65 +150 °C Tj operating junction temperature − 150 °C Note 1. Device mounted on a printed-circuit board. MRC275 250 handbook, halfpage P tot (mW) 200 BF908 150 BF908R 100 50 0 0 50 100 150 200 o Tamb ( C) Fig.3 Power derating curves. Rev. 03 - 14 November 2007 3 of 9 NXP Semiconductors Product specification Dual-gate MOS-FETs BF908; BF908R THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS VALUE UNIT BF908 500 K/W BF908R 550 K/W thermal resistance from junction to ambient note 1 Note 1. Device mounted on a printed-circuit board. STATIC CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ±V(BR)G1-SS gate 1-source breakdown voltage VG2-S = VDS = 0; IG1-S = 10 mA 8 − 20 V ±V(BR)G2-SS gate 2-source breakdown voltage VG1-S = VDS = 0; IG2-S = 10 mA 8 − 20 V −V(P)G1-S gate 1-source cut-off voltage VG2-S = 4 V; VDS = 8 V; ID = 20 µA − − 2 V −V(P)G2-S gate 2-source cut-off voltage VG1-S = 4 V; VDS = 8 V; ID = 20 µA − − 1.5 V IDSS drain-source current VG2-S = 4 V; VDS = 8 V; VG1-S = 0 3 15 27 mA ±IG1-SS gate 1 cut-off current VG2-S = VDS = 0; VG1-S = 5 V − − 50 nA ±IG2-SS gate 2 cut-off current VG1-S = VDS = 0; VG2-S = 5 V − − 50 nA MAX. UNIT DYNAMIC CHARACTERISTICS Common source; Tamb = 25 °C; VDS = 8 V; VG2-S = 4 V; ID = 15 mA; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. yfs forward transfer admittance pulsed; Tj = 25 °C; f = 1 MHz 36 43 50 mS Cig1-s input capacitance at gate 1 f = 1 MHz 2.4 3.1 4 pF Cig2-s input capacitance at gate 2 f = 1 MHz 1.2 1.8 2.5 pF Cos output capacitance f = 1 MHz 1.2 1.7 2.2 pF Crs reverse transfer capacitance f = 1 MHz 20 30 45 fF F noise figure f = 200 MHz; GS = 2 mS; BS = BSopt − 0.6 1.2 dB f = 800 MHz; GS = GSopt; BS = BSopt − 1.5 2.5 dB Rev. 03 - 14 November 2007 4 of 9 NXP Semiconductors Product specification Dual-gate MOS-FETs BF908; BF908R MRC282 MRC281 40 handbook, halfpage VG2-S = 4 V ID (mA) 3V 30 30 handbook, halfpage VG1-S = 0.3 V ID (mA) 0.2 V 2V 20 0.1 V 1.5 V 1V 20 0V 0.5 V 10 −0.1 V 10 −0.2 V −0.3 V 0V 0 −0.6 −0.4 0 −0.2 0 0.2 0.4 0 0.6 4 8 12 16 VDS (V) VG1-S (V) VDS = 8 V; Tj = 25 °C. VG2-S = 4 V; Tj = 25 °C. Fig.4 Transfer characteristics; typical values. MRC280 50 4V Yfs (mS) 40 3V 2V Fig.5 Output characteristics; typical values. MRC276 60 Yfs (mS) 1.5 V 40 30 1V 20 20 0.5 V 10 VG2-S = 0 V 0 0 0 5 10 15 20 VDS = 8 V; Tj = 25 °C. Fig.6 40 25 I D (mA) 0 40 80 120 160 T j (o C) VDS = 8 V; VG2-S = 4 V; ID = 15 mA. Forward transfer admittance as a function of drain current; typical values. Fig.7 Rev. 03 - 14 November 2007 Forward transfer admittance as a function of junction temperature; typical values. 5 of 9 NXP Semiconductors Product specification Dual-gate MOS-FETs Table 1 f (MHz) BF908; BF908R Scattering parameters s11 MAGNITUDE (ratio) s21 ANGLE (deg) MAGNITUDE (ratio) s12 ANGLE (deg) MAGNITUDE (ratio) s22 ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) VDS = 8 V; VG2-S = 4 V; ID = 10 mA; Tamb = 25 °C. 50 0.998 −5.1 3.537 173.5 0.001 98.2 0.996 −2.4 100 0.994 −10.4 3.502 167.7 0.001 88.8 0.994 −4.9 200 0.979 −20.8 3.450 154.9 0.003 74.6 0.987 −9.5 300 0.962 −30.3 3.318 143.7 0.004 69.5 0.983 −13.9 400 0.939 −40.1 3.234 131.9 0.005 65.6 0.980 −18.5 500 0.914 −49.1 3.093 120.7 0.006 64.4 0.974 −22.8 600 0.892 −57.1 2.912 111.1 0.005 63.1 0.969 −27.0 700 0.865 −64.4 2.774 101.0 0.005 65.2 0.966 −31.2 800 0.837 −71.6 2.616 91.4 0.004 70.8 0.965 −35.4 900 0.811 −78.1 2.479 81.9 0.004 87.4 0.965 −39.4 1000 0.785 −84.5 3.329 72.5 0.003 108.0 0.966 −43.7 VDS = 8 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C. 50 0.998 −5.3 3.983 173.4 0.001 95.5 0.994 −2.4 100 0.994 −10.9 3.943 167.5 0.001 93.6 0.991 −5.0 200 0.976 −21.6 3.878 154.7 0.003 74.3 0.984 −9.7 300 0.957 −31.7 3.722 143.3 0.004 70.0 0.979 −14.2 400 0.934 −41.7 3.614 131.6 0.005 63.5 0.975 −18.8 500 0.907 −51.1 3.446 120.4 0.006 62.2 0.969 −23.2 600 0.885 −59.1 3.240 110.9 0.005 59.6 0.964 −27.4 700 0.851 −66.8 3.072 100.9 0.005 64.8 0.961 −31.6 800 0.826 −73.9 2.891 91.3 0.004 67.8 0.959 −35.9 900 0.797 −80.7 2.733 81.9 0.004 85.0 0.958 −40.0 1000 0.773 −87.0 2.569 72.8 0.004 102.9 0.958 −44.2 Table 2 Noise data f (MHz) Γopt Fmin (dB) rn (ratio) (deg) 0.720 56.7 0.580 0.700 59.2 0.520 VDS = 8 V; VG2-S = 4 V; ID = 10 mA; Tamb = 25 °C. 800 1.50 VDS = 8 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C. 800 1.50 Rev. 03 - 14 November 2007 6 of 9 NXP Semiconductors Product specification Dual-gate MOS-FETs BF908; BF908R PACKAGE OUTLINES handbook, full pagewidth 3.0 2.8 0.150 0.090 0.75 0.60 B 1.9 4 3 0.1 max o 10 max 0.2 M A B A 2.5 max 1.4 1.2 o 10 max 1 1.1 max o 30 max 0.88 2 0 0.1 0.48 0.1 M A B 0 0.1 MBC845 1.7 TOP VIEW Dimensions in mm. Fig.8 SOT143. 3.0 2.8 handbook, full pagewidth 0.150 0.090 0.40 0.25 B 1.9 3 4 0.1 max o 10 max 0.2 M A A 1.4 1.2 o 2.5 max 10 max 2 1.1 max o 30 max 1 0.48 0.38 0.88 0.78 MBC844 1.7 0.1 M B TOP VIEW Dimensions in mm. Fig.9 SOT143R. Rev. 03 - 14 November 2007 7 of 9 BF908; BF908R NXP Semiconductors Dual-gate MOS-FETs Legal information Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. 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Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] Rev. 03 - 14 November 2007 8 of 9 BF908; BF908R NXP Semiconductors Dual-gate MOS-FETs Revision history Revision history Document ID Release date Data sheet status Change notice Supersedes BF908-R_N_3 20071114 Product data sheet - BF908-R_2 • Modifications: Fig. 1 and 2 on page 2; Figure note changed BF908-R_2 19960730 Product specification - BF908R_1 BF908R_1 - - - - Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 14 November 2007 Document identifier: BF908-R_N_3