ADPOW APTM10DHM05 Asymmetrical - bridge mosfet power module Datasheet

APTM10DHM05
Asymmetrical - Bridge
MOSFET Power Module
Application
VBUS
Q1
•
•
•
•
CR3
G1
OUT2
S1
•
CR2
G4
S4
0/VBUS
•
•
-
OUT1
VBUS
•
Power MOS V® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
0/VBUS
Benefits
S1
S4
G4
OUT2
•
•
•
•
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
100
278
207
1100
±30
5
780
100
50
3000
Unit
V
A
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-6
APTM10DHM05– Rev 0 May, 2005
G1
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Q4
OUT1
VDSS = 100V
RDSon = 4.5mΩ typ @ Tj = 25°C
ID = 278A @ Tc = 25°C
APTM10DHM05
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
IDSS
RDS(on)
VGS(th)
IGSS
Characteristic
Test Conditions
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
VGS = 0V,VDS = 100V
VGS = 0V,VDS = 80V
Min
Tj = 25°C
Tj = 125°C
VGS = 10V, ID = 125A
VGS = VDS, ID = 5mA
VGS = ±30 V, VDS = 0V
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
4.5
2
Min
VGS = 10V
VBus = 50V
ID = 250A
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy X
Eoff
Turn-off Switching Energy Y
Eon
Turn-on Switching Energy X
Eoff
Turn-off Switching Energy Y
Typ
20
8
2.9
700
Max
200
1000
5
4
±200
Unit
Max
Unit
µA
mΩ
V
nA
nF
120
nC
360
80
Resistive Switching
VGS = 15V
VBus = 66V
ID = 250A
R G = 2.5 Ω
Rise Time
Typ
165
ns
280
135
Inductive switching @ 25°C
VGS = 15V, VBus = 66V
ID = 250A, R G =2.5Ω
Inductive switching @ 125°C
VGS = 15V, VBus = 66V
ID = 250A, R G = 2.5Ω
1.1
mJ
1.2
1.22
mJ
1.28
X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
Symbol Characteristic
VRRM
Test Conditions
Min
Maximum Reverse Leakage Current
VR=200V
Tj = 25°C
Tj = 125°C
IF(A V)
Maximum Average Forward Current
50% duty cycle
Tc = 80°C
Diode Forward Voltage
IF = 200A
IF = 400A
IF = 200A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Max
200
Maximum Peak Repetitive Reverse Voltage
IRM
VF
Typ
IF = 200A
VR = 133V
di/dt =600A/µs
V
350
600
Tj = 125°C
Tj = 25°C
200
1
1.4
0.9
60
Tj = 125°C
Tj = 25°C
110
400
Tj = 125°C
1680
APT website – http://www.advancedpower.com
Unit
µA
A
V
ns
nC
2-6
APTM10DHM05– Rev 0 May, 2005
Diode ratings and characteristics
APTM10DHM05
Thermal and package characteristics
Symbol Characteristic
Min
transistor
diode
RthJC
Junction to Case
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Torque
Mounting torque
Wt
Package Weight
To heatsink
For terminals
M6
M5
2500
-40
-40
-40
3
2
Typ
Max
0.16
0.30
Unit
°C/W
V
150
125
100
5
3.5
280
°C
N.m
g
APT website – http://www.advancedpower.com
3-6
APTM10DHM05– Rev 0 May, 2005
Package outline (dimensions in mm)
APTM10DHM05
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.18
0.16
0.9
0.14
0.7
0.12
0.1
0.5
0.08
0.06
0.3
0.04
Single Pulse
0.1
0.02
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Transfert Characteristics
240
VGS =15V, 10V & 9V
1000
ID, Drain Current (A)
800
600
8V
400
7V
6V
200
0
V DS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
200
160
120
80
T J=25°C
40
T J=125°C
0
4
8
12
16
20
24
28
0
VDS , Drain to Source Voltage (V)
1.2
Normalized to
V GS=10V @ 125A
1.1
V GS=10V
1
VGS=20V
0.9
0.8
1
2
3
4
5
6
VGS , Gate to Source Voltage (V)
7
DC Drain Current vs Case Temperature
300
RDS(on) vs Drain Current
ID, DC Drain Current (A)
RDS(on) Drain to Source ON Resistance
T J=-55°C
0
250
200
150
100
50
0
0
25
50
75 100 125 150 175 200
ID, Drain Current (A)
25
50
75
100
125
150
TC, Case Temperature (°C)
APT website – http://www.advancedpower.com
4-6
APTM10DHM05– Rev 0 May, 2005
ID, Drain Current (A)
Low Voltage Output Characteristics
1200
1.10
1.05
1.00
0.95
0.90
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
1.1
1.0
0.9
0.8
0.7
VGS=10V
ID= 125A
2.0
1.5
1.0
0.5
0.0
-50 -25
25
50
75 100 125 150
Maximum Safe Operating Area
0.6
limited by
RDSon
100µs
100
1ms
Single pulse
TJ=150°C
10ms
10
-50 -25
0
25 50 75 100 125 150
1
Capacitance vs Drain to Source Voltage
100000
Ciss
10000
Coss
Crss
1000
0
10
20
30
40
50
VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
TC, Case Temperature (°C)
C, Capacitance (pF)
0
TJ, Junction Temperature (°C)
1000
ID, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
Threshold Voltage vs Temperature
1.2
ON resistance vs Temperature
2.5
10
100
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
16
ID=250A
TJ=25°C
14
V DS =20V
12
VDS=50V
10
V DS =80V
8
6
4
2
0
0
200
APT website – http://www.advancedpower.com
400
600
800
1000
Gate Charge (nC)
5-6
APTM10DHM05– Rev 0 May, 2005
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
RDS(on), Drain to Source ON resistance
(Normalized)
APTM10DHM05
APTM10DHM05
Delay Times vs Current
Rise and Fall times vs Current
250
350
250
td(off)
VDS=66V
RG=2.5Ω
T J=125°C
L=100µH
200
150
td(on)
100
150
tf
100
0
0
0
100
200
300
I D, Drain Current (A)
400
0
100
200
300
ID, Drain Current (A)
400
Switching Energy vs Gate Resistance
Switching Energy vs Current
5
VDS=66V
RG=2.5Ω
TJ=125°C
L=100µH
2.5
2
Switching Energy (mJ)
3
Eoff
1.5
Eon
1
0.5
0
V DS =66V
ID=200A
T J=125°C
L=100µH
4
3
Eoff
Eon
2
1
0
100
200
300
400
0
5
I D, Drain Current (A)
Operating Frequency vs Drain Current
ZCS
Hard
switching
60
ZVS
VDS=66V
D=50%
RG=2.5Ω
T J=125°C
T C=75°C
40
20
0
50
100
150
200
I D, Drain Current (A)
15
20
25
30
Source to Drain Diode Forward Voltage
IDR, Reverse Drain Current (A)
100
80
10
Gate Resistance (Ohms)
250
1000
TJ=150°C
100
TJ=25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
6-6
APTM10DHM05– Rev 0 May, 2005
0
Frequency (kHz)
tr
50
50
Eon and Eoff (mJ)
VDS=66V
RG=2.5Ω
TJ=125°C
L=100µH
200
t r and tf (ns)
t d(on) and td(off) (ns)
300
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