BYP57 / BYP58 35A Silicon Power Rectifier Diode Part no. Description The BYP57/58 are plastic sealed 35A- diodes, which are available in different reverse voltage classes up to 800V. The diodes can be delivered with limited forward voltage and reverse current differences for parallel connecting in rectifier stacks and backoff-diodes Features Applications • Forward current 35A • Power supplies • Reverse voltage 75V – 800V • Rectifier diode in car generators • Hermetic press-fit package • Rectifier bridges/stacks • Available in different modifications of the package • Back-off-diodes Typical application circuit Pinout details 1 Six pulse bridge connection BYP57: 1 - cathode 2 - anode BYP58: 1 - anode 2 - cathode 3 x BYP57-1200 ~ ~ ~ 3 x BYP58-1200 2 + - Ordering information Device Quantity per box BYP57-75; …; BYP57-800 400 BYP58-75; …; BYP58-800 400 Options The package quantities for the different package modifications are included in “PressFitPackageModifications.pdf” Device marking Devices are identified by type. Colour of marking: BYP57- black, BYP58 – red 422........................................……. date code 422 = 2004 week 22 ZETEX BYP57………………………………... diode type 400………………………………….. repetitive peak reverse voltage VRRM (in V) 400 Issue 4 – September 2006 © Zetex Semiconductors plc 2006 1 www.zetex.com BYP57 / BYP58 Absolute maximum ratings (at Tamb = 25°C unless otherwise stated) Parameter Repetitive peak reverse voltage Symbol Unit BYP57-75 BYP58-75 75 BYP57-100 BYP58-100 100 BYP57-150 BYP58-150 150 BYP57-200 BYP58-200 200 BYP57-300 BYP58-300 BYP57-400 BYP58-400 BYP57-500 BYP58-500 500 BYP57-600 BYP58-600 600 BYP57-700 BYP58-700 700 BYP57-800 BYP58-800 800 Forward current, arithmetic value VRRM IFAV 300 V 400 35 IFSM A 500 1800 Maximum rated value ∫i²dt A²s 1250 Repetitive peak forward current IFRM=π*IFAV 110 A Effective forward current IFRMS 55 A Junction temperature TJmax 175 °C Storage temperature range Tstg - 50 to + 140 °C Issue 4 – September 2006 2 © Zetex Semiconductors plc 2006 Tc = 140°C A 600 Surge forward current Test condition half-sine wave, ≤ 10 ms TJ = 175°C half-sine wave, ≤ 10 ms half-sine wave, ≤ 10 ms TJ = 175°C half-sine wave, ≤ 10 ms f = >15 Hz www.zetex.com BYP57 / BYP58 Thermal resistance Parameter Junction to case Symbol Value Unit RθJC 1.0 °C/W Thermal characteristics 40 108°C IF (A) 30 20 10 140°C 0 -50 -25 0 25 50 75 100 125 150 TC (°C) Forward current derating diagram IF (A) Electrical characteristics (at Tamb = 25°C unless otherwise stated) 40 35 30 25 20 15 10 5 0 0,75 0,8 0,85 0,9 0,95 1 1,05 VF (V) Forward voltage characteristic Issue 4 – September 2006 © Zetex Semiconductors plc 2006 3 www.zetex.com BYP57 / BYP58 Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Forward voltage Symbol BYP57-75...800 BYP58-75...800 Forward voltage BYP57-75...800 (information BYP58-75...800 values) BYP57-75...150 BYP58-75...150 BYP57-200...800 Reverse BYP58-200...800 current BYP57-75...400 BYP58-75...400 BYP57-500...800 BYP58-500...800 Threshold voltage (information value) Slope resistance (information value) Min. Typ. Max. Unit Test contitions VF - 1.0 1.1 V IF = 35 A, measuring time 10ms (half-sine wave) VF - - 1.2 V IF = 50 A, - - 3 IRRM mA TJ = 140°C, at VRRM mA at VRRM - - 1.5 - - 0.25 - - 0.1 V(FO) - 0.66 - V TJ = 175°C rF - 5.75 - mΩ TJ = 175°C IRRM Options: Electrical characteristics for parallel connecting (at Tamb = 25°C unless otherwise stated) Option 1 2 Parameter Forward voltage difference in one category of forward voltage Reverse current in one category of forward voltage (only for BYP57-300…800 and BYP58-300…800) Issue 4 – September 2006 © Zetex Semiconductors plc 2006 Symbol ∆VF Min. - Typ. - Max. 0.05 Unit V Test contitions IF = 35 A, measuring time 10ms (half-sine wave) IR - - 0.01 mA at VRRM 4 www.zetex.com BYP57 / BYP58 Packaging details Package dimensions Dimensions in millimeters are control dimensions, dimensions in inches are approximate DIM A A1 A2 D D1 D2 D3 MIN 18,00 5,90 2,10 15,50 12,72 11,50 1,33 Millimeters TYP 18,50 6,10 2,30 15,70 12,77 11,70 1,36 MAX 19,00 6,30 2,50 15,90 12,82 11,90 1,39 MIN 0,709 0,232 0,083 0,610 0,501 0,453 0,052 Inches TYP 0,728 0,240 0,091 0,618 0,503 0,461 0,054 MAX 0,748 0,248 0,098 0,626 0,505 0,469 0,055 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 4 – September 2006 © Zetex Semiconductors plc 2006 5 www.zetex.com