Diode Semiconductor Korea ERB37-08---ERB37-10 FAST RECOVERY RECT IFIERS VOLT AGE RANGE: 800--1000 V CURRENT : 1.0 A FEATURES Low cos t Diffus ed junction DO - 41 Low leakage Low forward voltage drop High current capability Eas ily cleaned with Freon,Alcohol,Is opropanol and s im ilar s olvents The plas tic m aterial carries U/L recognition 94V-0 MECHANICAL DATA Cas e:JEDEC DO-41,m olded plas tic Term inals : Axial lead ,s olderable per MIL- STD-202,Method 208 Dimensions in millimeters Polarity: Color band denotes cathode Weight: 0.012 ounces ,0.34 gram s Mounting pos ition: Any MAXIMUM RAT INGS AND ELECT RICAL CHARACT ERIST ICS Ratings at 25 am bient tem perature unles s otherwis e s pecified. Single phas e,half wave,60 H z,res is tive or inductive load. For capacitive load,derate by 20% . ERB37-08 ERB37-10 UNITS Maximum recurrent peak reverse voltage VRRM 800 1000 V Maximum RMS voltage V R MS 560 700 V Maximum DC blocking voltage VDC 800 1000 V Maximum average f orw ard rectif ied current 9.5mm lead length, @TA =75 IF (AV) 1.0 A IF SM 30.0 A VF 1.5 V Peak f orw ard surge current 8.3ms single half -sine-w ave superimposed on rated load @TJ =125 Maximum instantaneous f orw ard voltage @ 1.0 A Maximum reverse current at rated DC blocking voltage @TA =25 @TA =100 IR 5.0 100.0 A Maximum reverse recovery time (Note1) t rr 250 ns Typical junction capacitance (Note2) CJ 12 pF Typical thermal resistance (Note3) R θ JA 55 TJ -55----+150 TSTG -55----+150 Operating junction temperature range Storage temperature range /W N OTE:1. Meas ured with I F =0.5A, I R=1A, I rr=0.25A. 2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V D C . 3. Therm al res istanc e f rom junction to am bient. www.diode.kr Diode Semiconductor Korea ERB37-08---ERB37-10 FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM t rr 10 N.1. 50 N.1. +0.5A D.U.T. ( - ) (+) 50VDC (APPROX) (-) 0 PULSE GENERATOR (NOTE2) OSCILLOSCOPE (NOTE 1) 1 N.1. -0.25A ( + ) -1.0A NOTES:1.RISETIME=7ns MAX. INPUT IMPEDANCE=1M .22pF 1cm SET TIMEBASEFOR50/100 ns /cm 2.RISETIME=10ns MAX. SOURCEIMPEDANCE=5O FIG.3 -- FORWARD DERATING CURVE AVERAGE FORWARD RECTIFIED CURRENT AMPERES INSTANTANEOUS FORWARD CURRENT AMPERES FIG.2 --TYPICAL FORWARD CHARACTERISTIC 100 10 TJ=25 Pulse Width=300uS 4 2 1 .0 0 .4 0 .1 0 .0 4 0 .0 1 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1.5 1.25 1.0 0.75 0.25 0 INSTANTANEOUS FORWARD VOLTAGE,VOLTS 12 10 TJ=25 f=1MHz 2 .4 1.0 2 4 10 REVERSE VOLTAGE,VOLTS 20 40 75 100 125 150 175 100 40 TJ=125 8.3ms Single Half Sine-Wave 30 AMPERES 14 PAKE FORWARD SURGE CURRENT JUNCTION CAPACITANCE,pF 16 .2 50 FIG.5--PEAK FORWARD SURGE CURRENT 10 1 .1 25 AMBIENT TEMPERATURE. FIG.4--TYPICAL JUNCTION CAPACITANCE 4 S in g le P h a s e H a lf W a ve 6 0 H Z R e sis tiv e o r In d u c tive L o a d 0.5 20 10 0 1 2 4 8 10 20 40 60 80 10 0 NUMBER OF CYCLES AT 60Hz www.diode.kr