DSK ERB37-08 Fast recovery rectifier Datasheet

Diode Semiconductor Korea ERB37-08---ERB37-10
FAST RECOVERY RECT IFIERS
VOLT AGE RANGE: 800--1000 V
CURRENT : 1.0 A
FEATURES
Low cos t
Diffus ed junction
DO - 41
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with Freon,Alcohol,Is opropanol
and s im ilar s olvents
The plas tic m aterial carries U/L recognition 94V-0
MECHANICAL DATA
Cas e:JEDEC DO-41,m olded plas tic
Term inals : Axial lead ,s olderable per
MIL- STD-202,Method 208
Dimensions in millimeters
Polarity: Color band denotes cathode
Weight: 0.012 ounces ,0.34 gram s
Mounting pos ition: Any
MAXIMUM RAT INGS AND ELECT RICAL CHARACT ERIST ICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,60 H z,res is tive or inductive load. For capacitive load,derate by 20% .
ERB37-08
ERB37-10
UNITS
Maximum recurrent peak reverse voltage
VRRM
800
1000
V
Maximum RMS voltage
V R MS
560
700
V
Maximum DC blocking voltage
VDC
800
1000
V
Maximum average f orw ard rectif ied current
9.5mm lead length,
@TA =75
IF (AV)
1.0
A
IF SM
30.0
A
VF
1.5
V
Peak f orw ard surge current
8.3ms single half -sine-w ave
superimposed on rated load
@TJ =125
Maximum instantaneous f orw ard voltage
@ 1.0 A
Maximum reverse current
at rated DC blocking voltage
@TA =25
@TA =100
IR
5.0
100.0
A
Maximum reverse recovery time (Note1)
t rr
250
ns
Typical junction capacitance
(Note2)
CJ
12
pF
Typical thermal resistance
(Note3)
R θ JA
55
TJ
-55----+150
TSTG
-55----+150
Operating junction temperature range
Storage temperature range
/W
N OTE:1. Meas ured with I F =0.5A, I R=1A, I rr=0.25A.
2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V D C .
3. Therm al res istanc e f rom junction to am bient.
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Diode Semiconductor Korea
ERB37-08---ERB37-10
FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
t rr
10
N.1.
50
N.1.
+0.5A
D.U.T.
( - )
(+)
50VDC
(APPROX)
(-)
0
PULSE
GENERATOR
(NOTE2)
OSCILLOSCOPE
(NOTE 1)
1
N.1.
-0.25A
( + )
-1.0A
NOTES:1.RISETIME=7ns MAX. INPUT IMPEDANCE=1M .22pF
1cm
SET TIMEBASEFOR50/100 ns /cm
2.RISETIME=10ns MAX. SOURCEIMPEDANCE=5O
FIG.3 -- FORWARD DERATING CURVE
AVERAGE FORWARD RECTIFIED CURRENT
AMPERES
INSTANTANEOUS FORWARD CURRENT
AMPERES
FIG.2 --TYPICAL FORWARD CHARACTERISTIC
100
10
TJ=25
Pulse Width=300uS
4
2
1 .0
0 .4
0 .1
0 .0 4
0 .0 1
0.6 0.8
1.0
1.2
1.4
1.6
1.8
2.0
1.5
1.25
1.0
0.75
0.25
0
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
12
10
TJ=25
f=1MHz
2
.4
1.0
2
4
10
REVERSE VOLTAGE,VOLTS
20
40
75
100
125
150
175
100
40
TJ=125
8.3ms Single Half
Sine-Wave
30
AMPERES
14
PAKE FORWARD SURGE CURRENT
JUNCTION CAPACITANCE,pF
16
.2
50
FIG.5--PEAK FORWARD SURGE CURRENT
10
1
.1
25
AMBIENT TEMPERATURE.
FIG.4--TYPICAL JUNCTION CAPACITANCE
4
S in g le P h a s e
H a lf W a ve 6 0 H Z
R e sis tiv e o r
In d u c tive L o a d
0.5
20
10
0
1
2
4
8 10
20
40
60 80 10 0
NUMBER OF CYCLES AT 60Hz
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