AO6422 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6422/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for general purpose application. AO6422 and AO6422L are electrically identical. -RoHS Compliant -AO6422L is Halogen Free VDS = 20V ID = 5A (VGS = 4.5V) RDS(ON) < 44mΩ (VGS = 4.5V) RDS(ON) < 55mΩ (VGS = 2.5V) RDS(ON) < 72mΩ (VGS = 1.8V) TSOP6 Top View D D G 1 6 2 5 3 4 D D D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol 10 Sec Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A TA=25°C ID IDM TA=70°C B TA=25°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C TJ, TSTG Symbol A A t ≤ 10s Steady State Steady State Alpha & Omega Semiconductor, Ltd. ±8 V 5 3.9 4.2 3 A 30 PD TA=70°C 20 Units V Steady State RθJA RθJL 2.0 1.1 1.3 0.7 -55 to 150 Typ 47.5 74 54 Max 62.5 110 68 W °C Units °C/W °C/W °C/W www.aosmd.com AO6422 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID = 250µA, VGS = 0V TJ = 55°C Gate-Body leakage current VDS = 0V, VGS = ±8V VDS = VGS ID = 250µA 0.4 ID(ON) On state drain current VGS = 4.5V, VDS = 5V 30 VGS = 4.5V, ID = 5.0A TJ=125°C VGS = 2.5V, ID = 4.5A Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg (4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time 44 48 60 43 55 mΩ 72 mΩ A 0.8 450 mΩ S 1 V 2 A 560 pF VGS=0V, VDS=10V, f=1MHz 74 VGS=0V, VDS=0V, f=1MHz 4.9 7.5 Ω 6.2 8.2 nC pF 52 VGS= 4.5V, VDS= 10V, ID= 5A Gate Drain Charge tD(on) 35 14 DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance V 55 Diode Forward Voltage IS = 1A,VGS = 0V Maximum Body-Diode Continuous Current Coss nA 1 VGS = 1.8V, ID = 3.5A VSD IS ±100 0.65 VDS = 5V, ID = 5.0A Forward Transconductance µA 5 Gate Threshold Voltage gFS Units V 1 VGS(th) Static Drain-Source On-Resistance Max 20 VDS = 20V, VGS = 0V IGSS RDS(ON) Typ VGS=4.5V, VDS=10V, RL=2Ω, RGEN=3Ω pF 0.4 nC 1.3 nC 4.5 ns 6 ns 33 ns 7.1 trr Body Diode Reverse Recovery Time IF=5A, dI/dt=100A/µs 13 Qrr Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/µs 3.3 ns 17 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. in any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using t ≤ 300µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in curve provides a single pulse rating. 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA Rev0 April 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO6422 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 30 4.5V 3V VDS= 5V 2.5V 25 8 6 2V ID(A) ID (A) 20 15 4 10 VGS=1.5V 2 5 0 125°C 0 1 2 3 4 5 0 0.4 0.8 1.2 1.6 2 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Figure 1: On-Region Characteristics 70 Normalized On-Resistance 1.6 VGS= 1.8V 62 RDS(ON) (mΩ) 25°C 0 54 46 VGS= 2.5V 38 VGS= 4.5V 30 0 3 6 VGS= 4.5V ID= 5A 1.4 1.2 1.0 0.8 I9F=-6.5A,12 dI/dt=100A/µs 15 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 120 ID= 5.0A 1E+00 100 80 60 IS (A) RDS(ON) (mΩ) 1E-01 1E-02 125°C 1E-03 25°C 125°C 1E-04 40 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 25°C 20 1 2 3 4 5 6 1E-05 1E-06 7 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 8 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO6422 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 800 5 VDS= 10V ID= 5A 600 Capacitance (pF) VGS (Volts) 4 3 2 Ciss 400 200 1 0 Coss Crss 0 0 1 2 3 4 5 6 7 0 Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 1000 RDS(ON) limited 10 Power (W) 1ms 1 10ms 100ms 10s TJ(Max)=150°C TA=25°C 0.1 100 1 0.00001 IF=-6.5A, dI/dt=100A/µs 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 1 10 DC 0.01 10 TJ(Max)=150°C TA=25°C 10µs 100µs 0.1 20 VDS (Volts) Figure 8: Capacitance Characteristics 100 ID (Amps) 5 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=110°C/W 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 0.001 0.00001 Ton Single Pulse 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com