AOSMD AO6422 N-channel enhancement mode field effect transistor Datasheet

AO6422
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO6422/L uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for general purpose application.
AO6422 and AO6422L are electrically identical.
-RoHS Compliant
-AO6422L is Halogen Free
VDS = 20V
ID = 5A
(VGS = 4.5V)
RDS(ON) < 44mΩ (VGS = 4.5V)
RDS(ON) < 55mΩ (VGS = 2.5V)
RDS(ON) < 72mΩ (VGS = 1.8V)
TSOP6
Top View
D
D
G
1 6
2 5
3 4
D
D
D
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
10 Sec
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current A
Pulsed Drain Current
Power Dissipation A
TA=25°C
ID
IDM
TA=70°C
B
TA=25°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead C
TJ, TSTG
Symbol
A
A
t ≤ 10s
Steady State
Steady State
Alpha & Omega Semiconductor, Ltd.
±8
V
5
3.9
4.2
3
A
30
PD
TA=70°C
20
Units
V
Steady State
RθJA
RθJL
2.0
1.1
1.3
0.7
-55 to 150
Typ
47.5
74
54
Max
62.5
110
68
W
°C
Units
°C/W
°C/W
°C/W
www.aosmd.com
AO6422
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID = 250µA, VGS = 0V
TJ = 55°C
Gate-Body leakage current
VDS = 0V, VGS = ±8V
VDS = VGS ID = 250µA
0.4
ID(ON)
On state drain current
VGS = 4.5V, VDS = 5V
30
VGS = 4.5V, ID = 5.0A
TJ=125°C
VGS = 2.5V, ID = 4.5A
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg (4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
44
48
60
43
55
mΩ
72
mΩ
A
0.8
450
mΩ
S
1
V
2
A
560
pF
VGS=0V, VDS=10V, f=1MHz
74
VGS=0V, VDS=0V, f=1MHz
4.9
7.5
Ω
6.2
8.2
nC
pF
52
VGS= 4.5V, VDS= 10V, ID= 5A
Gate Drain Charge
tD(on)
35
14
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
V
55
Diode Forward Voltage
IS = 1A,VGS = 0V
Maximum Body-Diode Continuous Current
Coss
nA
1
VGS = 1.8V, ID = 3.5A
VSD
IS
±100
0.65
VDS = 5V, ID = 5.0A
Forward Transconductance
µA
5
Gate Threshold Voltage
gFS
Units
V
1
VGS(th)
Static Drain-Source On-Resistance
Max
20
VDS = 20V, VGS = 0V
IGSS
RDS(ON)
Typ
VGS=4.5V, VDS=10V, RL=2Ω,
RGEN=3Ω
pF
0.4
nC
1.3
nC
4.5
ns
6
ns
33
ns
7.1
trr
Body Diode Reverse Recovery Time
IF=5A, dI/dt=100A/µs
13
Qrr
Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/µs
3.3
ns
17
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. in
any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using t ≤ 300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
Rev0 April 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO6422
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
30
4.5V
3V
VDS= 5V
2.5V
25
8
6
2V
ID(A)
ID (A)
20
15
4
10
VGS=1.5V
2
5
0
125°C
0
1
2
3
4
5
0
0.4
0.8
1.2
1.6
2
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Figure 1: On-Region Characteristics
70
Normalized On-Resistance
1.6
VGS= 1.8V
62
RDS(ON) (mΩ)
25°C
0
54
46
VGS= 2.5V
38
VGS= 4.5V
30
0
3
6
VGS= 4.5V
ID= 5A
1.4
1.2
1.0
0.8
I9F=-6.5A,12
dI/dt=100A/µs
15
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1E+01
120
ID= 5.0A
1E+00
100
80
60
IS (A)
RDS(ON) (mΩ)
1E-01
1E-02
125°C
1E-03
25°C
125°C
1E-04
40
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
25°C
20
1
2
3
4
5
6
1E-05
1E-06
7
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
8
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
www.aosmd.com
AO6422
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
800
5
VDS= 10V
ID= 5A
600
Capacitance (pF)
VGS (Volts)
4
3
2
Ciss
400
200
1
0
Coss
Crss
0
0
1
2
3
4
5
6
7
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
15
1000
RDS(ON)
limited
10
Power (W)
1ms
1
10ms
100ms
10s
TJ(Max)=150°C
TA=25°C
0.1
100
1
0.00001
IF=-6.5A, dI/dt=100A/µs
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
ZθJA Normalized Transient
Thermal Resistance
1
10
DC
0.01
10
TJ(Max)=150°C
TA=25°C
10µs
100µs
0.1
20
VDS (Volts)
Figure 8: Capacitance Characteristics
100
ID (Amps)
5
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=110°C/W
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
0.001
0.00001
Ton
Single Pulse
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Similar pages